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    Chemical mechanical polishing method
    16.
    发明授权
    Chemical mechanical polishing method 有权

    公开(公告)号：US12300508B2

    公开(公告)日：2025-05-13

    申请号：US17847290

    申请日：2022-06-23

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

    Inventor： Tung-Kai Chen ,  Ching-Hsiang Tsai ,  Kao-Feng Liao ,  Chih-Chieh Chang ,  Chun-Hao Kung ,  Fang-I Chih ,  Hsin-Ying Ho ,  Chia-Jung Hsu ,  Hui-Chi Huang ,  Kei-Wei Chen

    IPC: H01L21/321 ,  H01L21/28 ,  H01L21/3105

    Abstract: A planarization method includes: providing a substrate, wherein the substrate includes a first region and a second region having different degrees of hydrophobicity or hydrophilicity, the second region covering an upper surface of the first region; polishing the substrate with a polishing slurry until the upper surface of the first region is exposed; and continuing polishing and performing a surface treatment by the polishing slurry to adjust the degree of hydrophobicity or hydrophilicity of at least one of the first region and the second region. The polishing slurry and the upper surface of the second region have a first contact angle, and the polishing slurry and the upper surface of the first region have a second contact angle. The surface treatment keeps a contact angle difference between the first contact angle and the second contact angle being equal to or less than 30 degrees during the polishing.

    ELECTRICAL CLEANING TOOL FOR WAFER POLISHING TOOL SYSTEM
    17.
    发明申请
    ELECTRICAL CLEANING TOOL FOR WAFER POLISHING TOOL SYSTEM 有权

    公开(公告)号：US20240367202A1

    公开(公告)日：2024-11-07

    申请号：US18777692

    申请日：2024-07-19

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Chih-Wen Liu ,  Yeo-Sin Lin ,  Shu-Wei Hsu ,  Che-Hao Tu ,  Hui-Chi Huang ,  Kei-Wei Chen

    IPC: B08B3/10 ,  B08B1/12 ,  B24B37/04 ,  B24B37/10 ,  B24B37/30 ,  B24B57/02

    Abstract: A process tool including a polishing pad on a top surface of a wafer platen. A wafer carrier is configured to hold a wafer over the polishing pad. A slurry dispenser is configured to dispense an abrasive slurry including a plurality of charged abrasive particles having a first polarity onto the polishing pad. A first conductive rod is within the wafer platen and coupled to a first voltage supply. A wafer roller is configured to support the wafer. A first wafer brush is arranged beside the wafer roller. A second conductive rod is within the first wafer brush and coupled to a second voltage supply. The first voltage supply is configured to apply a first charge having a second polarity, opposite the first polarity, to the first conductive rod. The second voltage supply is configured to apply a second charge having the second polarity to the second conductive rod.

    Methods and systems for chemical mechanical polish cleaning
    18.
    发明授权
    Methods and systems for chemical mechanical polish cleaning 有权

    公开(公告)号：US11264232B2

    公开(公告)日：2022-03-01

    申请号：US15968316

    申请日：2018-05-01

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Chien-Ping Lee ,  Hui-Chi Huang

    IPC: H01L21/02 ,  B24B37/34 ,  H01L21/67

    Abstract: Methods for cleaning integrated circuit (IC) wafers after undergoing planarization processes (for example, chemical mechanical polishing processes) and associated cleaning units and/or planarization units are disclosed herein. An exemplary method includes configuring outlet areas of spray nozzles to deliver a cleaning solution to optimal locations of the IC wafer and delivering the cleaning solution via the spray nozzles having the configured outlet areas to the IC wafer. Each of the outlet areas is configured to achieve a particular velocity of the cleaning solution exiting the outlet area, such that the cleaning solution reaches a particular location of the IC wafer depending on the particular velocity. In some implementations, the cleaning solution enters inlet areas of the spray nozzles at the same flow rate and the cleaning solution exits the outlet areas of the spray nozzles at different velocities.

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