公开(公告)号：US20220250909A1

公开(公告)日：2022-08-11

申请号：US17729121

申请日：2022-04-26

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Luigi COLOMBO ,  Nazila DADVAND ,  Benjamin Stassen COOK ,  Archana VENUGOPAL

IPC: C01B21/064 ,  C23C16/34 ,  C23C18/32 ,  C23C18/16 ,  C23C18/36 ,  C23C18/28 ,  C23C18/30 ,  C23C18/20

Abstract: A microstructure comprises a plurality of interconnected units wherein the units are formed of hexagonal boron nitride (h-BN) tubes. The graphene tubes may be formed by photo-initiating the polymerization of a monomer in a pattern of interconnected units to form a polymer microlattice, removing unpolymerized monomer, coating the polymer microlattice with a metal, removing the polymer microlattice to leave a metal microlattice, depositing an h-BN precursor on the metal microlattice, converting the h-BN precursor to h-BN, and removing the metal microlattice.

公开(公告)号：US20200321299A1

公开(公告)日：2020-10-08

申请号：US16909649

申请日：2020-06-23

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Nazila DADVAND ,  Christopher Daniel MANACK ,  Salvatore Frank PAVONE

IPC: H01L23/00

Abstract: A structure for a semiconductor device includes a copper (Cu) layer and a first nickel (Ni) alloy layer with a Ni grain size a1. The structure also includes a second Ni alloy layer with a Ni grain size a2, wherein a1

公开(公告)号：US20190206793A1

公开(公告)日：2019-07-04

申请号：US16236101

申请日：2018-12-28

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Archana VENUGOPAL ,  Benjamin Stassen COOK ,  Nazila DADVAND ,  Luigi COLOMBO

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  C01B32/184

Abstract: A structure for a semiconductor device includes a dielectric layer and a metal layer. The structure also includes a plurality of unit cells. Each unit cell is formed of interconnected segments. The plurality of unit cells forms a lattice. The lattice is between the dielectric layer and the metal layer.

公开(公告)号：US20230275050A1

公开(公告)日：2023-08-31

申请号：US17682351

申请日：2022-02-28

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Nazila DADVAND

IPC: H01L23/00

CPC classification number: H01L24/05 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/48175 ,  H01L2924/0132

Abstract: In some examples, a semiconductor package comprises a semiconductor die including a device side having a circuit formed therein and a conductive member coupled to the circuit and having multiple layers. The conductive member includes: a titanium tungsten layer coupled to the circuit; a copper seed layer coupled to the titanium tungsten layer; a copper layer coupled to the copper seed layer; a nickel tungsten layer coupled to the copper layer; and a plated layer coupled to the nickel tungsten layer. The semiconductor package includes a bond wire coupled to the plated layer; and a conductive terminal coupled to the bond wire and exposed to an exterior surface of the semiconductor package.

公开(公告)号：US20220173062A1

公开(公告)日：2022-06-02

申请号：US17672463

申请日：2022-02-15

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Nazila DADVAND ,  Christopher Daniel MANACK ,  Salvatore Frank PAVONE

IPC: H01L23/00

Abstract: A structure for a semiconductor device includes a copper (Cu) layer and a first nickel (Ni) alloy layer with a Ni grain size a1. The structure also includes a second Ni alloy layer with a Ni grain size a2, wherein a1

公开(公告)号：US20210193600A1

公开(公告)日：2021-06-24

申请号：US16721546

申请日：2019-12-19

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Vivek Swaminathan SRIDHARAN ,  Christopher Daniel MANACK ,  Nazila DADVAND ,  Salvatore Frank PAVONE ,  Patrick Francis THOMPSON

IPC: H01L23/00

Abstract: In some examples, a package comprises a die and a redistribution layer coupled to the die. The redistribution layer comprises a metal layer, a brass layer abutting the metal layer, and a polymer layer abutting the brass layer.

公开(公告)号：US20190207002A1

公开(公告)日：2019-07-04

申请号：US16232123

申请日：2018-12-26

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Luigi COLOMBO ,  Archana VENUGOPAL ,  Benjamin Stassen COOK ,  Nazila DADVAND

IPC: H01L29/16 ,  H01L21/768 ,  H01L21/02 ,  H01L23/532 ,  H01L27/06 ,  H01L29/06 ,  C23C16/26 ,  C01B32/194

CPC classification number: H01L29/1606 ,  C01B32/194 ,  C23C16/26 ,  H01L21/0257 ,  H01L21/76805 ,  H01L21/76865 ,  H01L21/76879 ,  H01L23/53276 ,  H01L27/0688 ,  H01L29/0673

Abstract: A structure includes a metal layer and a graphene sheet having at least one hole. The graphene sheet is contained at least partly within the metal layer.

公开(公告)号：US20190206788A1

公开(公告)日：2019-07-04

申请号：US16236042

申请日：2018-12-28

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Benjamin Stassen COOK ,  Nazila DADVAND ,  Archana VENUGOPAL ,  Luigi COLOMBO

IPC: H01L23/528 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L23/528 ,  H01L21/76838 ,  H01L23/53228

Abstract: An interconnect structure for a semiconductor device includes a plurality of unit cells. Each unit cell is formed of interconnected conducting segments. The plurality of unit cells forms a conducting lattice.

公开(公告)号：US20190202958A1

公开(公告)日：2019-07-04

申请号：US16229971

申请日：2018-12-21

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Nazila DADVAND ,  Benjamin Stassen COOK ,  Archana VENUGOPAL ,  Luigi COLOMBO

IPC: C08F292/00 ,  C08F8/42 ,  C08L25/06 ,  C08L33/12 ,  C08K3/08 ,  C08K3/04 ,  C08K7/00 ,  C08J5/24 ,  G03F1/78

CPC classification number: C08F292/00 ,  C08F8/42 ,  C08J5/24 ,  C08K3/042 ,  C08K3/08 ,  C08K7/00 ,  C08K2003/085 ,  C08K2003/0862 ,  C08K2201/013 ,  C08L25/06 ,  C08L33/12 ,  G03F1/78

Abstract: A composite material comprises a polymer matrix having microstructure filler materials that comprise a plurality of interconnected units wherein the units are formed of connected tubes. The tubes may be formed by photo-initiating the polymerization of a monomer in a pattern of interconnected units to form a polymer microlattice, removing unpolymerized monomer, coating the polymer microlattice with a metal, removing the polymer microlattice to leave a metal microlattice, growing or depositing a material on the metal microlattice such as graphene, hexagonal boron nitride or other ceramic, and subsequently removing the metal microlattice.

公开(公告)号：US20190202700A1

公开(公告)日：2019-07-04

申请号：US16229822

申请日：2018-12-21

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Benjamin Stassen COOK ,  Nazila DADVAND ,  Luigi COLOMBO ,  Archana VENUGOPAL

IPC: C01B32/184 ,  C01B32/194 ,  C01B32/16

CPC classification number: C01B32/184 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/16 ,  C01B32/194

Abstract: A microstructure comprises a plurality of interconnected units wherein the units are formed of graphene tubes. The graphene tubes may be formed by photo-initiating the polymerization of a monomer in a pattern of units to form a polymer microlattice, removing unpolymerized monomer, coating the polymer microlattice with a metal, removing the polymer microlattice to leave a metal microlattice, depositing graphitic carbon on the metal microlattice, converting the graphitic carbon to graphene, and removing the metal microlattice. A ceramic may be deposited on the graphene and another graphene layer may be deposited on top of the ceramic to create a multi-layered sp2-bonded carbon tube.