Abstract:
Windowed wafer assemblies having interposers are described. A described example integrated circuit (IC) package includes first and second dies, where at least one of the first or second dies includes an optical window with a light transmittance wavelength range between 0.1 micrometers and 1.0 millimeter, and an interposer die between the first and second dies, where the interposer die is coupled to the first die at a first surface of the interposer to form a first bonded interface, where the interposer is coupled to the second die at a second surface of the interposer die to form a second bonded interface, where the second surface is opposite the first surface, where the first and second bonded interfaces form a sealed cavity of the IC package that is at least partially formed by the optical window, and where the interposer die includes electrical routing.
Abstract:
In described examples, a MEMS device component includes a passivation layer formed from a vapor and/or a liquid compound that may include precursors. The compound may contain amino acid, antioxidants, nitriles or other compounds, and may be disposed on a surface of the MEMS device component and/or a package or package portion thereof. If the compound is a precursor, it may be treated to cause formation of the passivation layer from the precursor.
Abstract:
Millimeter wave energy is provided to a spectroscopy cavity of a spectroscopy device that contains interrogation molecules. The microwave energy is received after it traverses the spectroscopy cavity. The amount of interrogation molecules in the spectroscopy cavity is adjusted by activating a precursor material in one or more sub-cavities coupled to the spectroscopy cavity by a diffusion path to increase the amount of interrogation molecules or by activating the getter material in one or more sub-cavities coupled to the spectroscopy cavity by a diffusion path to decrease the amount of interrogation molecules.
Abstract:
A bonding structure formed on a substrate includes an indium layer and a passivating nickel plating formed on the indium layer. The nickel plating serves to prevent a reaction involving the indium layer.
Abstract:
An optical electronics device includes first, second and third wafers. The first wafer has a semiconductor substrate with a dielectric layer on a side of the semiconductor substrate. The second wafer has a transparent substrate with an anti-reflective coating on a side of the transparent substrate. The first wafer is bonded to the second wafer at a silicon dioxide layer between the semiconductor substrate and the anti-reflective coating. The first and second wafers include a cavity extending from the dielectric layer through the semiconductor substrate and through the silicon dioxide layer to the anti-reflective coating. The third wafer includes micromechanical elements. The third wafer is bonded to the dielectric layer, and the micromechanical elements are contained within the cavity.
Abstract:
In described examples, a transient liquid phase (TLP) metal bonding material includes a first substrate and a base metal layer. The base metal layer is disposed over at least a portion of the first substrate. The base metal has a surface roughness (Ra) of between about 0.001 to 500 nm. Also, the TLP metal bonding material includes a first terminal metal layer that forms an external surface of the TLP metal bonding material. A metal fuse layer is positioned between the base metal layer and the first terminal metal layer. The TLP metal bonding material is stable at room temperature for at least a predetermined period of time.
Abstract:
Millimeter wave energy is provided to a spectroscopy cavity of a spectroscopy device that contains interrogation molecules. The microwave energy is received after it traverses the spectroscopy cavity. The amount of interrogation molecules in the spectroscopy cavity is adjusted by activating a precursor material in one or more sub-cavities coupled to the spectroscopy cavity by a diffusion path to increase the amount of interrogation molecules or by activating the getter material in one or more sub-cavities coupled to the spectroscopy cavity by a diffusion path to decrease the amount of interrogation molecules.
Abstract:
A method for forming a sealed cavity includes bonding a non-conductive structure to a first substrate to form a non-conductive aperture into the first substrate. On a surface of the non-conductive structure opposite the first substrate, the method includes depositing a first metal layer. The method further includes patterning a first iris in the first metal layer, depositing a first dielectric layer on a surface of the first metal layer opposite the non-conductive structure, and patterning an antenna on a surface of the first dielectric layer opposite the first metal layer. The method also includes creating a cavity in the first substrate, depositing a second metal layer on a surface of the cavity, patterning a second iris in the second metal layer, and bonding a second substrate to a surface of the first substrate opposite the non-conductive structure to thereby seal the cavity.
Abstract:
Disclosed examples provide gas cells and a method of fabricating a gas cell, including forming a cavity in a first substrate, forming a first conductive material on a sidewall of the cavity, forming a glass layer on the first conductive material, forming a second conductive material on a bottom side of a second substrate, etching the second conductive material to form apertures through the second conductive material, forming conductive coupling structures on a top side of the second substrate, and bonding a portion of the bottom side of the second substrate to a portion of the first side of the first substrate to seal the cavity.
Abstract:
Described examples include a millimeter wave atomic clock apparatus, chip scale vapor cell, and fabrication method in which a low pressure dipolar molecule gas is provided in a sealed cavity with a conductive interior surface forming a waveguide. Non-conductive apertures provide electromagnetic entrance to, and exit from, the cavity. Conductive coupling structures formed on an outer surface of the vapor cell near the respective non-conductive apertures couple an electromagnetic field to the interior of the cavity for interrogating the vapor cell using a transceiver circuit at a frequency that maximizes the rotational transition absorption of the dipolar molecule gas in the cavity to provide a reference clock signal for atomic clock or other applications.