公开(公告)号：US09870898B2

公开(公告)日：2018-01-16

申请号：US15018981

申请日：2016-02-09

Applicant: Tokyo Electron Limited

Inventor： Masafumi Urakawa ,  Koichi Nagami

IPC: H01J37/32

CPC classification number: H01J37/32146 ,  H01J37/32174 ,  H01J37/32568 ,  H01J37/32715

Abstract: A plasma processing method includes applying a pulse wave of high frequency electric power for plasma generation and a pulse wave of high frequency electric power for bias whose frequency is lower than that of the high frequency electric power for plasma generation on the mounting table; and controlling the pulse wave of the high frequency electric power for plasma generation and the pulse wave of the high frequency electric power for bias such that a predetermined phase difference is generated between the pulse wave of the high frequency electric power for plasma generation and the pulse wave of the high frequency electric power for bias, and a duty ratio of the high frequency electric power for plasma generation becomes greater than or equal to a duty ratio of the high frequency electric power for bias.

公开(公告)号：US20170278677A1

公开(公告)日：2017-09-28

申请号：US15464739

申请日：2017-03-21

Applicant: Tokyo Electron Limited

Inventor： Koichi Nagami

IPC: H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32183 ,  H01J37/3244 ,  H01J37/32577 ,  H01J37/32697

Abstract: In a plasma processing of generating plasma of different processing gases within a processing vessel in sequence, a setting of a high frequency power can be changed at an appropriate time point after the processing gas output from a gas supply system is changed. A power level of a second high frequency power is increased at a time point when a first parameter which reflects impedance of plasma exceeds a first threshold value after the processing gas is changed while a first high frequency power is being supplied to a first electrode or a second electrode. Further, a power level of the first high frequency power is increased at a time point when a second parameter which reflects impedance of plasma exceeds a second threshold value after the processing gas is changed while the second high frequency power is being supplied to the second electrode.

公开(公告)号：US20150000841A1

公开(公告)日：2015-01-01

申请号：US14365334

申请日：2012-12-05

Applicant: Tokyo Electron Limited ,  Daihen Corporation

Inventor： Norikazu Yamada ,  Toshifumi Tachikawa ,  Koichi Nagami ,  Satoru Hamaishi ,  Koji Itadani

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32165 ,  H01J2237/24495 ,  H01J2237/24564 ,  H01J2237/334 ,  H05H1/46 ,  H05H2001/4682

Abstract: A plasma processing apparatus performs a stable and accurate matching operation with high reproducibility in a power modulation process of modulating of a high frequency power to be supplied into a processing vessel in a pulse shape. In the plasma processing apparatus, an impedance sensor 96A provided in a matching device performs a dual sampling averaging process on a RF voltage measurement value and an electric current measurement value respectively obtained from a RF voltage detector 100A of a voltage sensor system and a RF electric current detector 108A of an electric current sensor system by sampling-average-value calculating circuits 104A and 112A and by moving-average-value calculating circuits 106A and 114A. Thus, an update speed of a load impedance measurement value outputted from the impedance sensor 96A can be matched well with a driving control speed of a motor in a matching controller.

Abstract translation: 等离子体处理装置在调制要以脉冲形状提供给处理容器的高频功率的功率调制处理中以高再现性进行稳定且精确的匹配操作。 在等离子体处理装置中，设置在匹配装置中的阻抗传感器96A对从电压传感器系统的RF电压检测器100A和RF电力分别获得的RF电压测量值和电流测量值进行双取样平均化处理 采样平均值计算电路104A和112A以及移动平均值计算电路106A和114A的电流传感器系统的电流检测器108A。 因此，从阻抗传感器96A输出的负载阻抗测量值的更新速度能够与匹配控制器中的电动机的驱动控制速度良好地匹配。

公开(公告)号：US12243723B2

公开(公告)日：2025-03-04

申请号：US17804027

申请日：2022-05-25

Applicant: Tokyo Electron Limited

Inventor： Yusuke Hayasaka ,  Atsushi Sasaki ,  Kazuya Matsumoto ,  Shingo Takahashi ,  Koichi Nagami

IPC: H01J37/32

Abstract: In a disclosed plasma processing apparatus, an electrostatic chuck provided in a chamber includes a first region on which a substrate is placed and a second region on which an edge ring is placed. The first region includes a first electrode provided therein. The second region including a second electrode provided therein. A first feed line connects the first electrode and a bias power supply generating a pulse of a voltage applied to the first electrode to each other. A second feed line connects the second electrode and the bias power supply or another bias power supply generating a pulse of the voltage applied to the second electrode to each other. The second feed line includes one or more sockets and one or more feed pins. The one or more feed pins have flexibility in a radial direction thereof and are fitted into the one or more sockets.

公开(公告)号：US12033833B2

公开(公告)日：2024-07-09

申请号：US17587189

申请日：2022-01-28

Applicant: Tokyo Electron Limited

Inventor： Koji Yamagishi ,  Yuji Aota ,  Koichi Nagami ,  Kota Ishiharada

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32577 ,  H01J37/32651 ,  H01J2237/334

Abstract: There is provided a radio frequency power filter circuit used in a plasma processing apparatus that includes an electrode and a feeding body connected to a center of a rear surface of the electrode and generates plasma by applying radio frequency power, the filter circuit including a series resonance circuit provided in a wiring line between a conductive member provided in the plasma processing apparatus and a power supply configured to supply DC power or power having a frequency of less than 400 kHz to the conductive member, and including a coil connected in series to the wiring line and a capacitor connected between the wiring line and a ground. A central axis of the coil and a central axis of the feeding body coincide with each other.

公开(公告)号：US11764034B2

公开(公告)日：2023-09-19

申请号：US16878098

申请日：2020-05-19

Applicant: Tokyo Electron Limited

Inventor： Chishio Koshimizu ,  Shin Hirotsu ,  Takenobu Ikeda ,  Koichi Nagami ,  Shinji Himori

IPC: H01J37/32 ,  H05H1/00 ,  H01H1/46

CPC classification number: H01J37/32183 ,  H01H1/46 ,  H01J37/32568 ,  H01J37/32715 ,  H05H1/01

Abstract: A plasma processing method according to an exemplary embodiment includes applying a first direct-current voltage to a lower electrode of a substrate support provided in a chamber of a plasma processing apparatus, in a first period during generation of plasma in the chamber. The plasma processing method further includes applying a second direct-current voltage to the lower electrode in a second period different from the first period during generation of plasma in the chamber. The second direct-current voltage has a level different from a level of the first direct-current voltage. The second direct-current voltage has a same polarity as a polarity of the first direct-current voltage.

公开(公告)号：US11594398B2

公开(公告)日：2023-02-28

申请号：US16790028

申请日：2020-02-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yusuke Aoki ,  Fumiya Takata ,  Toshikatsu Tobana ,  Shinya Morikita ,  Kazunobu Fujiwara ,  Jun Abe ,  Koichi Nagami

IPC: C23C16/00 ,  H01L21/306 ,  H01J37/32 ,  B08B5/00

Abstract: An apparatus for plasma processing is configured to generate plasma in a chamber and periodically apply a pulsed negative DC voltage to an upper electrode from a DC power supply in the plasma processing on a substrate and in plasma cleaning. A duty ratio of the pulsed negative DC voltage used for the plasma processing is smaller than a duty ratio of the pulsed negative DC voltage used for the plasma cleaning. An absolute value of an average value of an output voltage of the DC power supply used for the plasma processing is smaller than an absolute value of an average value of the output voltage of the DC power supply used for the plasma cleaning.

公开(公告)号：US11387077B2

公开(公告)日：2022-07-12

申请号：US17102444

申请日：2020-11-24

Applicant: Tokyo Electron Limited

Inventor： Shinji Kubota ,  Kazuya Nagaseki ,  Shinji Himori ,  Koichi Nagami

IPC: H01J37/32

Abstract: A disclosed plasma processing method includes generating plasma in a chamber of a plasma processing apparatus by supplying radio frequency power from a radio frequency power source in a first period. The plasma processing method further includes stopping supply of the radio frequency power from the radio frequency power source in a second period following the first period. The plasma processing method further includes applying a negative direct-current voltage from a bias power source to a substrate support in a third period following the second period. In the third period, the radio frequency power is not supplied. In the third period, the negative direct-current voltage is set to generate ions in a chamber by secondary electrons that are emitted by causing ions in the chamber to collide with a substrate.

公开(公告)号：US10553407B2

公开(公告)日：2020-02-04

申请号：US16104512

申请日：2018-08-17

Applicant: Tokyo Electron Limited

Inventor： Koichi Nagami ,  Kazunobu Fujiwara ,  Tatsuro Ohshita ,  Takashi Dokan ,  Koji Maruyama ,  Kazuya Nagaseki ,  Shinji Himori

IPC: H01J37/32

Abstract: A decrease of an etching rate of a substrate can be suppressed, and energy of ions irradiated to an inner wall of a chamber main body can be reduced. A plasma processing apparatus includes a DC power supply configured to generate a negative DC voltage to be applied to a lower electrode of a stage. In a plasma processing performed by using the plasma processing apparatus, a radio frequency power is supplied to generate plasma by exciting a gas within a chamber. Further, the negative DC voltage from the DC power supply is periodically applied to the lower electrode to attract ions in the plasma onto the substrate placed on the stage. A ratio occupied, within each of cycles, by a period during which the DC voltage is applied to the lower electrode is set to be equal to or less than 40%.

公开(公告)号：US10269539B2

公开(公告)日：2019-04-23

申请号：US15938006

申请日：2018-03-28

Applicant: Tokyo Electron Limited

Inventor： Kumiko Ono ,  Hiroshi Tsujimoto ,  Koichi Nagami

IPC: H01J37/32

Abstract: In a plasma processing method includes a first stage of generating plasma of a first processing gas and a second stage of generating plasma of a second processing gas, are performed, a time difference between a start time point of a time period during which the second stage is performed and a start time point of an output of the second processing gas from a gas supply system is decided automatically according to a recipe. A delay time corresponding to flow rates of the first processing gas and the second processing gas in the second stage is specified from a function or a table.