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公开(公告)号：US20210033666A1
公开(公告)日：2021-02-04
申请号：US16767226
申请日：2018-11-05
Applicant: TOKYO ELECTRON LIMITED
Inventor： Shigeru KASAI
Abstract: A prober includes: a stage that places a substrate formed with a plurality of chips thereon in a matrix; a contact that sequentially contacts with electrode pads of the plurality of chips thereby performing an inspection on electrical characteristic of the plurality of chips; a plurality of LED units provided on a side opposite to a placing surface of the stage so as to independently heat a plurality of areas where the plurality of chips are located, respectively, and each including one or a plurality of LEDs; and a controller that outputs a control signal to drive, among the plurality of LED units, at least an LED unit corresponding to an area of a chip to be inspected, among the area of the chip to be inspected and peripheral areas of the corresponding area.
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公开(公告)号：US20170263421A1
公开(公告)日：2017-09-14
申请号：US15455566
申请日：2017-03-10
Applicant: TOKYO ELECTRON LIMITED
Inventor： Taro IKEDA , Shigeru KASAI
IPC: H01J37/32
CPC classification number: H01J37/32266 , H01J37/3222 , H01J37/32467 , H01J37/32715 , H01J2237/332 , H01J2237/334
Abstract: There is provided a plasma processing apparatus including a microwave introduction part configured to radiate microwaves transmitted by a microwave transmission part inside a process container. The microwave introduction part includes a conductive member constituting a ceiling portion of the process container and having a recess formed to face the mounting surface, a plurality of slots forming a part of the conductive member and configured to radiate the microwaves transmitted via the microwave transmission part, and a microwave transmitting member fitted to the recess of the conductive member and configured to transmit and introduce the microwaves radiated from the plurality of slots into the process container. The microwave transmitting member is provided to be shared with the microwaves transmitted via transmission paths and includes an interference suppressing part configured to suppress interference of the microwaves in the microwave transmitting member.
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公开(公告)号：US20150072533A1
公开(公告)日：2015-03-12
申请号：US14479466
申请日：2014-09-08
Applicant: TOKYO ELECTRON LIMITED
Inventor： Yusuke MURAKI , Shigeru KASAI , Tomohiro SUZUKI
IPC: H01L21/67 , H01L21/3065 , H01L21/26 , H01L21/306
CPC classification number: H01L21/67069 , H01L21/31116 , H01L21/67115 , H01L21/67207 , H01L21/76802 , H01L21/76897
Abstract: Provided is a method of etching a silicon oxide film, which includes supplying a mixture gas of a halogen element-containing gas and a basicity gas onto a surface of the silicon oxide film; modifying the silicon oxide film to produce a reaction product; and heating the reaction product to remove the reaction product. Modifying the silicon oxide film and heating the reaction product are performed using one chamber. In heating the reaction product, the reaction product is selectively heated by a heating unit.
Abstract translation: 提供一种蚀刻氧化硅膜的方法，其包括将含卤素元素的气体和碱性气体的混合气体提供到氧化硅膜的表面上; 改性氧化硅膜以产生反应产物; 并加热反应产物以除去反应产物。 使用一个室进行氧化硅膜的修饰和加热反应产物。 在加热反应产物时，通过加热单元选择性地加热反应产物。
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公开(公告)号：US20240159825A1
公开(公告)日：2024-05-16
申请号：US18282744
申请日：2022-03-16
Applicant: TOKYO ELECTRON LIMITED
Inventor： Tomoki NUKANOBU , Hiroyuki NAKAYAMA , Shigeru KASAI , Yoshiyuki MORIFUJI , Dai KOBAYASHI
IPC: G01R31/311
CPC classification number: G01R31/311
Abstract: There is provided an LED chuck comprising: a top plate on which an object to be inspected is mounted; an LED array substrate disposed to face the object to be inspected, and provided with a plurality of LEDs for heating the object to be inspected that is mounted on the top plate; a cooling plate disposed on a back side of the LED array substrate; an LED control substrate disposed on a back side of the cooling plate and controlling the plurality of LEDs; and a base plate disposed to surround the LED control substrate. A surface of the cooling plate facing the LED control substrate and a surface of the base plate facing the LED control substrate are formed of a magnetic material.
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公开(公告)号：US20220262661A1
公开(公告)日：2022-08-18
申请号：US17627286
申请日：2020-05-19
Applicant: TOKYO ELECTRON LIMITED
Inventor： Shigeru KASAI , Masahito KOBAYASHI
Abstract: This temperature control device for controlling the temperature of an object that is subject to temperature control is provided with: a heating mechanism which has a heat source for heating said object subject to temperature control; a temperature measuring instrument for measuring the peripheral temperature of said object subject to temperature control; a temperature estimation unit for dynamically estimating the temperature of said object subject to temperature control on the basis of power inputted to the heat source, power supplied to said object subject to temperature control, and the peripheral temperature; and a temperature controller for performing control on the temperature of said object subject to temperature control by controlling the power inputted to the heat source on the basis of the estimated temperature of said object subject to temperature control.
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Patent Agency Ranking
公开(公告)号：US20220191974A1
公开(公告)日：2022-06-16
申请号：US17543012
申请日：2021-12-06
Applicant: TOKYO ELECTRON LIMITED
Inventor： Shigeru KASAI , Yoshiyuki MORIFUJI
Abstract: A heating device using an LED is provided. The heating device includes a heater for heating a target with LED light, an LED controller for controlling power supplied to the LED such that a temperature of the target is adjusted with the power being in the range where a current thereof does not exceed an allowable current Imax, a correction unit for correcting Imax, and a voltage measurement unit for measuring a voltage of the LED. The correction unit estimates a junction temperature Tjm of the LED when Imax is supplied based on a measurement result by the voltage measurement unit when an estimation current Ie is supplied after Imax is supplied to the LED for correction. When Tjm of the LED when Imax is supplied exceeds Tmax corresponding to Imax, the correction unit corrects Imax.
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公开(公告)号：US20210265183A1
公开(公告)日：2021-08-26
申请号：US17177687
申请日：2021-02-17
Applicant: Tokyo Electron Limited
Inventor： Shigeru KASAI , Yutaka AKAIKE , Yoshiyasu KATO , Hiroyuki NAKAYAMA , Hiroaki KOMIYA
Abstract: A dummy wafer includes a planar heater and a pair of plate-shaped members formed of an aluminum alloy, aluminum, or silicon carbide, wherein the planar heater is sandwiched by the plate-shaped members.
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公开(公告)号：US20200173942A1
公开(公告)日：2020-06-04
申请号：US16698379
申请日：2019-11-27
Applicant: TOKYO ELECTRON LIMITED
Inventor： Shigeru KASAI
Abstract: A test wafer according to an embodiment of the present disclosure is a test wafer used for simulation of heat emission of devices on a wafer, and includes a silicon wafer and a silicon heater bonded to a surface of the silicon wafer.
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公开(公告)号：US20160013056A1
公开(公告)日：2016-01-14
申请号：US14771046
申请日：2013-12-26
Applicant: TOKYO ELECTRON LIMITED
Inventor： Shigeru KASAI , Hitoshi MIURA
CPC classification number: H01L21/02667 , H01L21/02422 , H01L21/02532 , H01L21/02631 , H01L21/2686 , H01L21/67115 , H01L21/6719 , H05B6/70 , H05B6/701 , H05B6/708 , H05B6/72 , H05B6/78 , H05B6/80
Abstract: A heat treatment apparatus includes processing chambers into which microwaves with an effective wavelength of λg are introduced. The processing chambers are arranged parallel to each other. The length from an inner wall surface of one end of each processing chamber in the lengthwise direction to an inner wall surface of the other end thereof is m×λg/2 (m being a positive integer). An antenna sending microwave oscillation into the processing chambers is separated by λg/4+p×λg/2 (p being a positive integer including 0) from the inner wall surface of the end part in the lengthwise direction of each processing chamber. The processing chambers are disposed to be offset by λg/(2×n) (n being the number of the processing chambers) from each other in the lengthwise direction, when the processing chambers are seen to overlap with each other in a perpendicular direction to the lengthwise direction of each processing chamber.
Abstract translation: 热处理设备包括其中引入有效波长λg的微波的处理室。 处理室彼此平行布置。 从处理室的长度方向的一端的内壁面到另一端的内壁面的长度为m×λg/ 2（m为正整数）。 在每个处理室的长度方向上，从端部的内壁表面分离到处理室中发送微波振荡的天线由λg/ 4 + p×λg/ 2（p为包括0的正整数）分开。 处理室被设置为在长度方向上彼此偏移λg/（2×n）（n为处理室的数量），当处理室在垂直方向上彼此重叠时， 每个处理室的长度方向。
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公开(公告)号：US20220221509A1
公开(公告)日：2022-07-14
申请号：US17611879
申请日：2020-05-08
Applicant: TOKYO ELECTRON LIMITED
Inventor： Shigeru KASAI
IPC: G01R31/28
Abstract: A method for performing temperature control of a mounting base on which a substrate is to be mounted. A substrate mounting surface of the mounting base is divided in the radial direction into a plurality of regions, and a heater is provided to each of the plurality of regions. The method includes: a step for performing feedback control that adjusts the operation amount of the heater in the centermost region of the plurality of regions of the substrate mounting surface such that the centermost region is at a set temperature; and a step for performing feedback control that adjusts the operation amount of the heater in an outside region that is further to the outside than the centermost region of the plurality of regions of the substrate mounting surface such that the temperature difference between the outside region and the region that is adjacent to the outside region on the inside in the radial direction is a preset value.
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