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    PHOSPHOR
    11.
    发明申请
    PHOSPHOR 审中-公开
    磷

    公开(公告)号：US20170058198A1

    公开(公告)日：2017-03-02

    申请号：US15247973

    申请日：2016-08-26

    Applicant: Koito Manufacturing Co., Ltd. ,  Tokyo Institute of Technology ,  National University Corporation Nagoya University

    Inventor： Hisayoshi DAICHO ,  Yu SHINOMIYA ,  Kiminori ENOMOTO ,  Hideo HOSONO ,  Satoru MATSUISHI ,  Hiroshi SAWA ,  Akitoshi NAKANO

    IPC: C09K11/77

    CPC classification number: C09K11/7796 ,  C09K11/7739 ,  C09K11/7742

    Abstract: A phosphor is represented by the general formula aMIX.MII1-xMIMVO4:(Re)x where MI is at least one atomic element selected from the group consisting of K, Li, Na, Rb, Cs, Fr, Cu, and Ag, with K being essential; MII is at least one atomic element selected from the group consisting of Mg, Ca, Sr, Ba, Ra, Mn, Zn, Cd, and Sn; MV is at least one atomic element selected from the group consisting of P, V, Nb, Ta, As, Sb, and Bi; X is at least one halogen element, with F being essential; Re is at least one atomic element selected from the group consisting of rare earth elements, with Eu being essential; and a is in the range 0.6≦a≦1.4.

    Abstract translation: 其中MI是选自K，Li，Na，Rb，Cs，Fr，Cu和Ag中的至少一种原子元素，其中K是必需的; MII是选自Mg，Ca，Sr，Ba，Ra，Mn，Zn，Cd和Sn中的至少一种原子元素; MV是选自P，V，Nb，Ta，As，Sb和Bi中的至少一种原子元素; X是至少一个卤素元素，其中F是必需的; Re是选自稀土元素中的至少一种原子元素，Eu是必需的; a在0.6≤a≤1.4的范围内。

    MAGNETO-RESISTIVE EFFECT ELEMENT
    12.
    发明申请
    MAGNETO-RESISTIVE EFFECT ELEMENT 审中-公开
    磁电效应元件

    公开(公告)号：US20140293683A1

    公开(公告)日：2014-10-02

    申请号：US13854336

    申请日：2013-04-01

    Applicant: TOKYO INSTITUTE OF TECHNOLOGY ,  THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

    Inventor： Yutaka MAJIMA ,  Shinya KANO ,  Hideo HOSONO ,  Hideya KUMOMI ,  Ali JAVEY ,  Kuniharu TAKEI

    IPC: H01L43/08 ,  G11C11/16 ,  H01L43/12 ,  H03K19/18

    CPC classification number: H01L43/08 ,  G11C11/165 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/12

    Abstract: [PURPOSE]According to the invention there is provided a magneto-resistive effect element having a larger magneto-resistive ratio than in the prior art.[SOLUTION MEANS]The magneto-resistive effect element (10) of the invention has a compound semiconductor layer (11) composed of a compound semiconductor such as InAs, metal layers (12A and 12B) composed of a metal element such as Ni not composing the compound semiconductor, and interlayers (13A and 13B) of NiInAs or the like composed of the constituent elements of the compound semiconductor and a metal element, situated between the compound semiconductor layer and the metal layer. In the magneto-resistive effect element (10) of the invention, application of a magnetic field (50) alters the conductance with respect to the electric current (60) flowing through the metal layer (12B), interlayer (13B), compound semiconductor layer (11), interlayer (13A) and metal layer (12A).

    Abstract translation: [目的]根据本发明，提供了一种具有比现有技术更大的磁阻比的磁阻效应元件。 [解决方案]本发明的磁阻效应元件（10）具有由诸如InAs的化合物半导体构成的化合物半导体层（11），由不构成Ni的金属元素构成的金属层（12A和12B） 化合物半导体以及由化合物半导体的构成元素和金属元素构成的NiInAs等的中间层（13A，13B），位于化合物半导体层和金属层之间。 在本发明的磁阻效应元件（10）中，施加磁场（50）相对于流过金属层（12B）的电流（60），中间层（13B），化合物半导体 层（11），中间层（13A）和金属层（12A）。

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