公开(公告)号：US20110248255A1

公开(公告)日：2011-10-13

申请号：US13164906

申请日：2011-06-21

申请人： Bo-Sung KIM ,  Woo-Jae LEE ,  Min-Seong RYU

发明人： Bo-Sung KIM ,  Woo-Jae LEE ,  Min-Seong RYU

IPC分类号： H01L27/28

CPC分类号： H01L27/283 ,  H01L27/3274 ,  H01L51/0545 ,  H01L51/10 ,  H01L51/5237

摘要： A method of manufacturing a thin film transistor array panel is provided, the method includes forming a gate line on a substrate; forming a gate insulating layer on the gate line; forming a data line and a drain electrode on the gate insulating layer; forming an organic semiconductor layer on the data line, the drain electrode and an exposed portion of the gate insulating layer between the data line and the drain electrodel; forming a protective member fully covering the organic semiconductor layer; forming a passivation layer on the protective layer, the data line, and the drain electrode; forming a contact hole in the passivation layer to expose a portion of the drain electrode; and forming a pixel electrode on the passivation layer, the pixel electrode connected to the drain electrode through the contact hole.

摘要翻译： 提供一种制造薄膜晶体管阵列面板的方法，该方法包括在衬底上形成栅极线; 在栅极线上形成栅极绝缘层; 在栅极绝缘层上形成数据线和漏电极; 在数据线和漏电极之间的数据线，漏电极和栅极绝缘层的暴露部分形成有机半导体层; 形成完全覆盖有机半导体层的保护构件; 在保护层，数据线和漏电极上形成钝化层; 在所述钝化层中形成接触孔以露出所述漏电极的一部分; 以及在所述钝化层上形成像素电极，所述像素电极通过所述接触孔连接到所述漏电极。

公开(公告)号：US20110014736A1

公开(公告)日：2011-01-20

申请号：US12889613

申请日：2010-09-24

申请人： Bo-Sung KIM ,  Mun-Pyo HONG ,  Woo-Jae LEE

发明人： Bo-Sung KIM ,  Mun-Pyo HONG ,  Woo-Jae LEE

IPC分类号： H01L51/56

CPC分类号： H01L51/428 ,  H01L27/307 ,  H01L27/3244 ,  H01L51/0545 ,  H01L51/56 ,  Y02E10/549 ,  Y02P70/521

摘要： An organic thin film transistor (“TFT”) array panel includes a substrate, a gate line extending in a first direction, a data line extending in a second direction, intersecting with and insulated from the gate line, a source electrode connected to the data line, a drain electrode facing the source electrode, a pixel electrode connected to the drain electrode, and an organic semiconductor connected to the source electrode and the drain electrode, the organic semiconductor made of an organic material with photosensitivity.

摘要翻译： 有机薄膜晶体管（“TFT”）阵列面板包括基板，沿第一方向延伸的栅极线，与第二方向延伸并与栅极线绝缘的绝缘的数据线，连接到数据的源电极 线路，面对源电极的漏电极，连接到漏电极的像素电极和连接到源电极和漏电极的有机半导体，由具有感光性的有机材料制成的有机半导体。

公开(公告)号：US20110285952A1

公开(公告)日：2011-11-24

申请号：US13196791

申请日：2011-08-02

申请人： Joong-Hyun MUN ,  Jang-Kun SONG ,  Yong-Woo CHOI ,  Bo-Sung KIM ,  Kwan-Wook JUNG ,  Jung-Ho LEE ,  Hyo-Rak NAM

发明人： Joong-Hyun MUN ,  Jang-Kun SONG ,  Yong-Woo CHOI ,  Bo-Sung KIM ,  Kwan-Wook JUNG ,  Jung-Ho LEE ,  Hyo-Rak NAM

IPC分类号： G02F1/1343

CPC分类号： G02F1/136286 ,  G02F1/133345 ,  G02F1/133707 ,  G02F1/13394 ,  G02F1/134336 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/13398 ,  G02F2001/134372 ,  G02F2001/136231 ,  G02F2201/123 ,  H01L27/124 ,  H01L29/78669

摘要： A liquid crystal display includes first and second substrates. The first substrate has a first insulating substrate, and a pixel electrode formed on the first insulating substrate with a first opening pattern. The second substrate has a second insulating substrate, and a common electrode formed on the second insulating substrate with a second opening pattern. The first and the second opening patterns proceed parallel to each other while being arranged in an alternate manner. A liquid crystal material is injected between the first and the second substrates. A spacer is positioned at an end of the second opening pattern to maintain the distance between the first and the second substrates.

公开(公告)号：US20110039363A1

公开(公告)日：2011-02-17

申请号：US12911621

申请日：2010-10-25

申请人： Bo-Sung KIM ,  Yong-Uk Lee ,  Mun-Pyo Hong

发明人： Bo-Sung KIM ,  Yong-Uk Lee ,  Mun-Pyo Hong

IPC分类号： H01L51/40

CPC分类号： H01L27/283 ,  H01L27/3274 ,  H01L51/0021 ,  H01L51/0036 ,  H01L51/0038 ,  H01L51/0052 ,  H01L51/0529 ,  H01L51/0541 ,  H01L51/0545

摘要： An organic thin film transistor array panel according to an embodiment of the present invention includes: a substrate; a data line disposed on the substrate; an insulating layer disposed on the data line and having a contact hole exposing the data line; a first electrode disposed on the insulating layer and connected to the data line through the contact hole; a second electrode disposed on the insulating layer; an organic semiconductor disposed on the first and the second electrodes; a gate insulator disposed on the organic semiconductor; and a gate electrode disposed on the gate insulator.

摘要翻译： 根据本发明实施例的有机薄膜晶体管阵列面板包括：基板; 设置在所述基板上的数据线; 绝缘层，设置在所述数据线上并具有暴露所述数据线的接触孔; 第一电极，设置在绝缘层上并通过接触孔连接到数据线; 设置在所述绝缘层上的第二电极; 布置在第一和第二电极上的有机半导体; 设置在所述有机半导体上的栅极绝缘体; 以及设置在栅极绝缘体上的栅电极。

公开(公告)号：US20080079011A1

公开(公告)日：2008-04-03

申请号：US11866341

申请日：2007-10-02

申请人： Keun-Kyu SONG ,  Bo-Sung KIM ,  Seung-Hwan CHO

发明人： Keun-Kyu SONG ,  Bo-Sung KIM ,  Seung-Hwan CHO

IPC分类号： H01L33/00 ,  H01L21/336

CPC分类号： G02F1/1368 ,  G02F1/167 ,  G02F2001/136231

摘要： A display substrate includes a thin film transistor and a pixel electrode. The thin film transistor includes source and drain electrodes, an active layer covering the source and drain electrodes, and a gate electrode formed on the active layer. The pixel electrode includes the same material as that of the gate electrode, and is formed in the process of forming the gate electrode to reduce the number of process steps and the number of masks.

摘要翻译： 显示基板包括薄膜晶体管和像素电极。 薄膜晶体管包括源极和漏极，覆盖源极和漏极的有源层和形成在有源层上的栅电极。 像素电极包括与栅电极相同的材料，并且在形成栅电极的过程中形成，以减少处理步骤的数量和掩模的数量。

公开(公告)号：US20080038867A1

公开(公告)日：2008-02-14

申请号：US11745722

申请日：2007-05-08

申请人： Jung-Han SHIN ,  Bo-Sung KIM ,  Seong-sik SHIN

发明人： Jung-Han SHIN ,  Bo-Sung KIM ,  Seong-sik SHIN

IPC分类号： H01L51/40

CPC分类号： H01L51/0005 ,  H01L51/052 ,  H01L51/0545

摘要： A method for manufacturing a thin film transistor array panel includes forming a gate electrode, forming a source electrode and a drain electrode opposing each other and separated from each other on the gate electrode, forming a gate insulator on the gate electrode, forming an organic semiconductor on the gate insulator, and forming a passivation member covering the organic semiconductor, wherein the source and drain electrodes contact the organic semiconductor, and an ink-jet printing process is used to form at least two among the gate insulator, the organic semiconductor, and the passivation member, and wherein a mixed solvent including at least two among a gate insulator material, an organic semiconductor material, and a passivation member material is sprayed in the ink-jet printing process.

摘要翻译： 一种制造薄膜晶体管阵列面板的方法包括形成栅电极，形成彼此相对的源电极和漏电极，并在栅电极上彼此分离，在栅电极上形成栅极绝缘体，形成有机半导体 在所述栅极绝缘体上形成覆盖所述有机半导体的钝化部件，其中所述源极和漏极与所述有机半导体接触，并且使用喷墨印刷工艺在所述栅极绝缘体，所述有机半导体和所述有机半导体中形成至少两个 钝化部件，并且其中在喷墨印刷工艺中喷涂包括栅极绝缘体材料，有机半导体材料和钝化部件材料中的至少两个的混合溶剂。

公开(公告)号：US20120003796A1

公开(公告)日：2012-01-05

申请号：US13230111

申请日：2011-09-12

申请人： Je-Hun LEE ,  Young-Min KIM ,  Bo-Sung KIM ,  Jun-Young LEE ,  Sung-Wook KANG

发明人： Je-Hun LEE ,  Young-Min KIM ,  Bo-Sung KIM ,  Jun-Young LEE ,  Sung-Wook KANG

IPC分类号： H01L21/336

CPC分类号： H01L51/102 ,  G02F1/13439 ,  H01L27/283 ,  H01L51/0541 ,  H01L51/0545

摘要： An improved display substrate is provided to reduce surface defects on insulating layers of organic thin film transistors. Related methods of manufacture are also provided. In one example, a display substrate includes a base, a plurality of data lines, a plurality of gate lines, a pixel defined by the data lines and the gate lines, an organic thin film transistor, and a pixel electrode. The data lines are on the base and are oriented in a first direction. The gate lines are oriented in a second direction that crosses the first direction. The organic thin film transistor includes a source electrode electrically connected to one of the data lines, a gate electrode electrically connected to one of the gate lines, and an organic semiconductor layer. The pixel electrode is disposed in the pixel and electrically connected to the organic thin film transistor. The pixel electrode comprises a transparent oxynitride.

摘要翻译： 提供改进的显示基板以减少有机薄膜晶体管的绝缘层上的表面缺陷。 还提供了相关的制造方法。 在一个示例中，显示基板包括基底，多条数据线，多条栅极线，由数据线和栅极线限定的像素，有机薄膜晶体管和像素电极。 数据线在基座上并且朝向第一方向。 栅极线在与第一方向交叉的第二方向上取向。 有机薄膜晶体管包括电连接到数据线之一的源电极，电连接到栅极线之一的栅电极和有机半导体层。 像素电极设置在像素中并电连接到有机薄膜晶体管。 像素电极包括透明氧氮化物。

公开(公告)号：US20110254011A1

公开(公告)日：2011-10-20

申请号：US12902761

申请日：2010-10-12

申请人： Young-Min KIM ,  Bo-Sung KIM ,  Seon-Pil JANG ,  Seung-Hwan CHO ,  Kang-Moon JO

发明人： Young-Min KIM ,  Bo-Sung KIM ,  Seon-Pil JANG ,  Seung-Hwan CHO ,  Kang-Moon JO

IPC分类号： H01L29/04 ,  H01L21/84

CPC分类号： H01L29/78606 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1288

摘要： A display substrate includes a gate line, a gate insulation layer, a data line, a switching element, a protection insulation layer, a gate pad portion and a data pad portion. The gate insulation layer is disposed on the gate line. The switching element is connected to the gate line and the data line. The protection insulation layer is disposed on the switching element. The gate pad portion includes a first gate pad electrode which makes contact with an end portion of the gate line through a first hole formed through the gate insulation layer, and a second gate pad electrode which makes contact with the first gate pad electrode through a second hole formed through the protection insulation layer. The data pad portion includes a data pad electrode which makes contact with an end portion of the data line through a third hole formed through the protection insulation layer.

摘要翻译： 显示基板包括栅极线，栅极绝缘层，数据线，开关元件，保护绝缘层，栅极焊盘部分和数据焊盘部分。 栅极绝缘层设置在栅极线上。 开关元件连接到栅极线和数据线。 保护绝缘层设置在开关元件上。 栅极焊盘部分包括通过形成在栅极绝缘层上的第一孔与栅极线的端部接触的第一栅极焊盘电极和通过第二栅极焊盘电极与第一栅极焊盘电极接触的第二栅极焊盘电极 孔通过保护层形成。 数据焊盘部分包括通过形成在保护绝缘层上的第三孔与数据线的端部接触的数据焊盘电极。

公开(公告)号：US20070161258A1

公开(公告)日：2007-07-12

申请号：US11552877

申请日：2006-10-25

申请人： Ki-Heum NAM ,  Chear-Yeon MUN ,  Bo-Sung KIM

发明人： Ki-Heum NAM ,  Chear-Yeon MUN ,  Bo-Sung KIM

IPC分类号： H01L21/31

CPC分类号： H01L21/3003 ,  H01L21/28176 ,  H01L21/76828 ,  H01L21/76829

摘要： In an embodiment, a method of fabricating a semiconductor device having a hydrogen source layer includes forming an interlayer insulating layer on a semiconductor substrate. A hydrogen source layer is formed on the substrate having the interlayer insulating layer. A thermal annealing process is performed on the substrate having the hydrogen source layer such that hydrogen inside the hydrogen source layer is diffused to a surface of the semiconductor substrate. A conductive pattern is formed on the substrate having the thermally-treated hydrogen source layer. The conductive pattern may be a metal interconnection.

摘要翻译： 在一个实施例中，制造具有氢源层的半导体器件的方法包括在半导体衬底上形成层间绝缘层。 在具有层间绝缘层的基板上形成氢源层。 在具有氢源层的基板上进行热退火处理，使得氢源层内的氢扩散到半导体基板的表面。 在具有热处理氢源层的基板上形成导电图案。 导电图案可以是金属互连。

公开(公告)号：US20130171779A1

公开(公告)日：2013-07-04

申请号：US13670120

申请日：2012-11-06

申请人： Yeon-Taek JEONG ,  Bo-Sung KIM ,  Doo-Hyoung LEE ,  Doo-Na KIM ,  Eun-Hye PARK ,  Dong-Lim KIM ,  Hyun-Jae KIM ,  You-Seung RIM ,  Hyun-Soo LIM

发明人： Yeon-Taek JEONG ,  Bo-Sung KIM ,  Doo-Hyoung LEE ,  Doo-Na KIM ,  Eun-Hye PARK ,  Dong-Lim KIM ,  Hyun-Jae KIM ,  You-Seung RIM ,  Hyun-Soo LIM

IPC分类号： C09D5/00 ,  H01L29/66

CPC分类号： C09D5/00 ,  C04B35/01 ,  C04B35/453 ,  C04B35/457 ,  C04B35/62222 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/443 ,  C04B2235/444 ,  C04B2235/449 ,  H01L27/1225 ,  H01L29/22 ,  H01L29/24 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

摘要： According to a method of manufacturing a thin film transistor substrate, a composition including a metal oxalate and a solvent for manufacturing an oxide semiconductor is coated to form a thin film, the thin film is annealed, and the thin film is patterned to form a semiconductor pattern.

摘要翻译： 根据制造薄膜晶体管基板的方法，涂覆包含草酸金属盐和用于制造氧化物半导体的溶剂的组合物以形成薄膜，对薄膜进行退火，并将薄膜图案化以形成半导体 模式。