公开(公告)号：US20240329535A1

公开(公告)日：2024-10-03

申请号：US18361298

申请日：2023-07-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yen-Yu KUO ,  An-Ren ZI ,  Chen-Yu LIU ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

IPC: G03F7/09 ,  C09D125/06 ,  C09D133/12 ,  G03F7/004 ,  H01L21/033

CPC classification number: G03F7/091 ,  C09D125/06 ,  C09D133/12 ,  G03F7/0044 ,  H01L21/033

Abstract: A method of forming semiconductor device includes depositing a coating layer over a substrate, forming a photoresist layer over the coating layer, exposing the photoresist layer to actinic radiation, and developing the photoresist layer to form a patterned photoresist layer. The coating layer includes a polymer containing a first unit having a pendant hydrogen donor group capable of producing a hydrogen radical upon exposure to the actinic radiation or heat, and a second unit having a pendant water donor group capable of producing water upon exposure to the actinic radiation or heat.

公开(公告)号：US20230056958A1

公开(公告)日：2023-02-23

申请号：US17584173

申请日：2022-01-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tzu-Yang LIN ,  Chen-Yu LIU ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

IPC: G03F7/40 ,  G03F7/004 ,  H01L21/027

Abstract: Novel photoresist developing compositions including a deprotonation agent, such as a nitrogen containing organic base capable of deprotonating a surface of portions of a photoresist layer exposed to radiation.

公开(公告)号：US20220308452A1

公开(公告)日：2022-09-29

申请号：US17214660

申请日：2021-03-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ya-Ching CHANG ,  Chen-Yu LIU ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

IPC: G03F7/16 ,  H01L21/67

Abstract: In a method, a resist material is dispensed through a tube of a nozzle of a resist pump system on a wafer. The tube extends from a top to a bottom of the nozzle and has upper, lower, and middle segments. When not dispensing, the resist material is retracted from the lower and the middle segments, and maintained in the upper segment of the tube. When retracting, a first solvent is flown through a tip of the nozzle at the bottom of the nozzle to fill the lower segment of the tube with the first solvent and to produce a gap in the middle segment of the tube between the resist material and the first solvent. The middle segment includes resist material residues on an inner surface wall of the tube and vapor of the first solvent. The vapor of the first solvent prevents the resist material residues from drying.

公开(公告)号：US20200159110A1

公开(公告)日：2020-05-21

申请号：US16248601

申请日：2019-01-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ming-Hui WENG ,  Chen-Yu LIU ,  Cheng-Han WU ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

IPC: G03F1/82 ,  G03F7/20

Abstract: A lithography method includes forming a resist layer over a substrate. The resist layer is exposed to radiation. The exposed resist layer is developed using a developer that removes an exposed portion of the exposed resist layer, thereby forming a patterned resist layer. The patterned resist layer is rinsed using a basic aqueous rinse solution.

公开(公告)号：US20200013618A1

公开(公告)日：2020-01-09

申请号：US16572286

申请日：2019-09-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Hui WENG ,  An-Ren ZI ,  Ching-Yu CHANG ,  Chin-Hsiang LIN ,  Chen-Yu LIU

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/3115 ,  H01L21/02

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a material layer over a substrate and forming a resist layer over the material layer. The resist layer includes an inorganic material and an auxiliary. The inorganic material includes a plurality of metallic cores and a plurality of first linkers bonded to the metallic cores. The method includes exposing a portion of the resist layer. The resist layer includes an exposed region and an unexposed region. In the exposed region, the auxiliary reacts with the first linkers. The method also includes removing the unexposed region of the resist layer by using a developer to form a patterned resist layer. The developer includes a ketone-based solvent having a formula (a) or the ester-based solvent having a formula (b).

公开(公告)号：US20180174831A1

公开(公告)日：2018-06-21

申请号：US15628261

申请日：2017-06-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Yu LIU ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

IPC: H01L21/02 ,  H01L21/308 ,  H01L21/033 ,  C08G77/16 ,  C08G77/52 ,  C08G77/00

CPC classification number: H01L21/02216 ,  C08G77/16 ,  C08G77/52 ,  C08G77/70 ,  H01L21/02126 ,  H01L21/0332 ,  H01L21/3081

Abstract: Provided is a material composition and method for that includes forming a silicon-based resin over a substrate. In various embodiments, the silicon-based resin includes a nitrobenzyl functional group. In some embodiments, a baking process is performed to cross-link the silicon-based resin. Thereafter, the cross-linked silicon-based resin is patterned and an underlying layer is etched using the patterned cross-linked silicon-based resin as an etch mask. In various examples, the cross-linked silicon-based resin is exposed to a radiation source, thereby de-cross-linking the silicon-based resin. In some embodiments, the de-cross-linked silicon-based resin is removed using an organic solution.

公开(公告)号：US20180164684A1

公开(公告)日：2018-06-14

申请号：US15482315

申请日：2017-04-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ya-Ching CHANG ,  Chen-Yu LIU ,  Cheng-Han WU ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

IPC: G03F7/09 ,  G03F7/039 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/38 ,  G03F7/11 ,  H01L21/027 ,  H01L21/308

CPC classification number: G03F7/38 ,  G03F7/0392 ,  G03F7/325

Abstract: A resist material and methods for forming a semiconductor structure including using the resist material are provided. The method for forming a semiconductor structure includes forming a resist layer over a substrate and exposing a portion of the resist layer to form an exposed portion of the resist layer by performing an exposure process. The method for forming a semiconductor structure further includes developing the resist layer in a developer. In addition, the resist layer is made of a resist material including a photosensitive polymer and a contrast promoter, and a protected functional group of the photosensitive polymer is deprotected to form a deprotected functional group during the exposure process, and a functional group of the contrast promoter bonds to the deprotected functional group of the photosensitive polymer.