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11.发明授权公开(公告)号：US11491510B2
公开(公告)日：2022-11-08
申请号：US15930570
申请日：2020-05-13
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： I-Hsuan Chiu , Chia-Ming Hung , Li-Chun Peng , Hsiang-Fu Chen
Abstract: Various embodiments of the present disclosure are directed towards a semiconductor device. The semiconductor device includes an interconnect structure disposed over a semiconductor substrate. A dielectric structure is disposed over the interconnect structure. A plurality of cavities are disposed in the dielectric structure. A microelectromechanical system (MEMS) substrate is disposed over the dielectric structure, where the MEMS substrate comprises a plurality of movable membranes, and where the movable membranes overlie the cavities, respectively. A plurality of fluid communication channels are disposed in the dielectric structure, where each of the fluid communication channels extend laterally between two neighboring cavities of the cavities, such that each of the cavities are in fluid communication with one another.
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公开(公告)号：US20200024137A1
公开(公告)日：2020-01-23
申请号：US16584752
申请日：2019-09-26
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yi-Chia Lee , Chin-Min Lin , Cheng San Chou , Hsiang-Fu Chen , Wen-Chuan Tai , Ching-Kai Shen , Hua-Shu Ivan Wu , Fan Hu
Abstract: The present disclosure relates to a micro-electro mechanical system (MEMS) package and a method of achieving differential pressure adjustment in multiple MEMS cavities at a wafer-to-wafer bonding level. In some embodiments, a ventilation trench and an isolation trench are concurrently within a capping substrate. The isolation trench isolates a silicon region and has a height substantially equal to a height of the ventilation trench. A sealing structure is formed within the ventilation trench and the isolation trench, the sealing structure filing the isolation trench and defining a vent within the ventilation trench. A device substrate is provided and bonded to the capping substrate at a first gas pressure and hermetically sealing a first cavity associated with a first MEMS device and a second cavity associated with a second MEMS device. The capping substrate is thinned to open the vent to adjust a gas pressure of the second cavity.
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13.发明授权公开(公告)号：US10131540B2
公开(公告)日：2018-11-20
申请号：US14645650
申请日：2015-03-12
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Shao-Chi Yu , Chia-Ming Hung , Hsin-Ting Huang , Hsiang-Fu Chen , Allen Timothy Chang , Wen-Chuan Tai
Abstract: The present disclosure relates to a wafer level chip scale package (WLCSP) with a stress absorbing cap substrate. The cap substrate is bonded to a die through a bond ring and a bond pad arranged on an upper surface of the cap substrate. A through substrate via (TSV) extends from the bond pad, through the cap substrate, to a lower surface of the cap substrate. Further, recesses in the upper surface extend around the bond pad and along sidewalls of the bond ring. The recesses absorb induced stress, thereby mitigating any device offset in the die.
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公开(公告)号：US20170233249A1
公开(公告)日：2017-08-17
申请号：US15585805
申请日：2017-05-03
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Hsin-Ting Huang , Hsiang-Fu Chen , Wen-Chuan Tai , Shao-Chi Yu , Chia-Ming Hung , Allen Timothy Chang , Bruce C.S. Chou , Chin-Min Lin
CPC classification number: B81C1/00285 , B81B7/02 , B81B2201/0235 , B81B2201/0242 , B81B2207/095 , B81B2207/096 , B81C2203/0145
Abstract: The present disclosure relates to a method of forming a micro-electro mechanical system (MEMs) structure. In some embodiments, the method may be performed by providing a device substrate having a first MEMS device and a second MEMS device, and by providing a capping structure having a first cavity and a second cavity. The capping structure is bonded to the device substrate, such that the first cavity is arranged over the first MEMS device and the second cavity is arranged over the second MEMS device. A first pressure is established within the first cavity and the second cavity. A vent is selectively etched within the capping structure to change the first pressure within the second cavity to a second pressure, which is different from the first pressure.
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15.发明授权公开(公告)号：US11851323B2
公开(公告)日：2023-12-26
申请号：US16907607
申请日：2020-06-22
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Hsiang-Fu Chen , Chia-Ming Hung , I-Hsuan Chiu
CPC classification number: B81B7/02 , B81C1/00341 , B81B2201/0271 , B81B2203/0127 , B81B2203/0315 , B81B2207/07 , B81C2203/036
Abstract: Various embodiments of the present disclosure are directed towards a semiconductor device. The semiconductor device includes an interconnect structure disposed over a semiconductor substrate. A dielectric structure is disposed over the interconnect structure. A first cavity and a second cavity are disposed in the dielectric structure. A microelectromechanical system (MEMS) substrate is disposed over the dielectric structure, where the MEMS substrate comprises a first movable membrane overlying the first cavity and a second movable membrane overlying the second cavity. A first functional structure overlies the first movable membrane, where the first functional structure comprises a first material having a first chemical composition. A second functional structure overlies the second movable membrane, where the second functional structure is laterally spaced from the first functional structure, and where the second functional structure comprises a second material having a second chemical composition different than the first chemical composition.
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Patent Agency Ranking
公开(公告)号：US11365115B2
公开(公告)日：2022-06-21
申请号：US16558539
申请日：2019-09-03
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Fan Hu , Chun-Ren Cheng , Hsiang-Fu Chen , Wen-Chuan Tai
Abstract: Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a first dielectric structure disposed over a first semiconductor substrate, where the first dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the first dielectric structure and includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity. A first piezoelectric anti-stiction structure is disposed between the movable mass and the first dielectric structure, wherein the first piezoelectric anti-stiction structure includes a first piezoelectric structure and a first electrode disposed between the first piezoelectric structure and the first dielectric structure.
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公开(公告)号：US10961118B2
公开(公告)日：2021-03-30
申请号：US16584752
申请日：2019-09-26
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yi-Chia Lee , Chin-Min Lin , Cheng San Chou , Hsiang-Fu Chen , Wen-Chuan Tai , Ching-Kai Shen , Hua-Shu Ivan Wu , Fan Hu
Abstract: The present disclosure relates to a micro-electro mechanical system (MEMS) package and a method of achieving differential pressure adjustment in multiple MEMS cavities at a wafer-to-wafer bonding level. In some embodiments, a ventilation trench and an isolation trench are concurrently within a capping substrate. The isolation trench isolates a silicon region and has a height substantially equal to a height of the ventilation trench. A sealing structure is formed within the ventilation trench and the isolation trench, the sealing structure filing the isolation trench and defining a vent within the ventilation trench. A device substrate is provided and bonded to the capping substrate at a first gas pressure and hermetically sealing a first cavity associated with a first MEMS device and a second cavity associated with a second MEMS device. The capping substrate is thinned to open the vent to adjust a gas pressure of the second cavity.
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18.发明申请公开(公告)号：US20210061647A1
公开(公告)日：2021-03-04
申请号：US16907607
申请日：2020-06-22
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Hsiang-Fu Chen , Chia-Ming Hung , I-Hsuan Chiu
Abstract: Various embodiments of the present disclosure are directed towards a semiconductor device. The semiconductor device includes an interconnect structure disposed over a semiconductor substrate. A dielectric structure is disposed over the interconnect structure. A first cavity and a second cavity are disposed in the dielectric structure. A microelectromechanical system (MEMS) substrate is disposed over the dielectric structure, where the MEMS substrate comprises a first movable membrane overlying the first cavity and a second movable membrane overlying the second cavity. A first functional structure overlies the first movable membrane, where the first functional structure comprises a first material having a first chemical composition. A second functional structure overlies the second movable membrane, where the second functional structure is laterally spaced from the first functional structure, and where the second functional structure comprises a second material having a second chemical composition different than the first chemical composition.
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公开(公告)号：US20210060610A1
公开(公告)日：2021-03-04
申请号：US15930570
申请日：2020-05-13
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： I-Hsuan Chiu , Chia-Ming Hung , Li-Chun Peng , Hsiang-Fu Chen
Abstract: Various embodiments of the present disclosure are directed towards a semiconductor device. The semiconductor device includes an interconnect structure disposed over a semiconductor substrate. A dielectric structure is disposed over the interconnect structure. A plurality of cavities are disposed in the dielectric structure. A microelectromechanical system (MEMS) substrate is disposed over the dielectric structure, where the MEMS substrate comprises a plurality of movable membranes, and where the movable membranes overlie the cavities, respectively. A plurality of fluid communication channels are disposed in the dielectric structure, where each of the fluid communication channels extend laterally between two neighboring cavities of the cavities, such that each of the cavities are in fluid communication with one another.
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公开(公告)号：US20190161346A1
公开(公告)日：2019-05-30
申请号：US15823969
申请日：2017-11-28
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yi-Chia Lee , Chin-Min Lin , Cheng San Chou , Hsiang-Fu Chen , Wen-Chuan Tai , Ching-Kai Shen , Hua-Shu Ivan Wu , Fan Hu
Abstract: The present disclosure relates to a micro-electro mechanical system (MEMS) package and a method of achieving differential pressure adjustment in multiple MEMS cavities at a wafer-to-wafer bonding level. A device substrate comprising first and second MEMS devices is bonded to a capping substrate comprising first and second recessed regions. A ventilation trench is laterally spaced apart from the recessed regions and within the second cavity. A sealing structure is arranged within the ventilation trench and defines a vent in fluid communication with the second cavity. A cap is arranged within the vent to seal the second cavity at a second gas pressure that is different than a first gas pressure of the first cavity.
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