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公开(公告)号：US11305980B2
公开(公告)日：2022-04-19
申请号：US16717862
申请日：2019-12-17
发明人： Jui-Chun Weng , Lavanya Sanagavarapu , Ching-Hsiang Hu , Wei-Ding Wu , Shyh-Wei Cheng , Ji-Hong Chiang , Hsin-Yu Chen , Hsi-Cheng Hsu
摘要： A method for treating a micro electro-mechanical system (MEMS) component is disclosed. In one example, the method includes the steps of providing a first wafer, treating the first wafer to form cavities and at least an oxide layer on a top surface of the first wafer using a first chemical vapor deposition (CVD) process, providing a second wafer, bonding the second wafer on a top surface of the at least one oxide layer, treating the second wafer to form a first plurality of structures, depositing a layer of Self-Assembling Monolayer (SAM) to a surface of the MEMS component using a second CVD process.
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公开(公告)号：US09884758B2
公开(公告)日：2018-02-06
申请号：US15182754
申请日：2016-06-15
发明人： Shyh-Wei Cheng , Hsi-Cheng Hsu , Hsin-Yu Chen , Ji-Hong Chiang , Jui-Chun Weng , Wei-Ding Wu , Yu-Jui Wu , Ching-Hsiang Hu , Ming-Tsung Chen
CPC分类号： B81C1/00285 , B81B7/0038 , B81B2201/0235 , B81B2201/0242 , B81B2207/012 , B81B2207/07 , B81C2203/0118 , B81C2203/0792
摘要： The present disclosure relates to a MEMS package having an outgassing element configured to adjust a pressure within a hermetically sealed cavity by inducing outgassing of into the cavity, and an associated method. In some embodiments, the method is performed by forming an outgassing element within a passivation layer over a CMOS substrate and forming an outgassing resistive layer to cover the outgassing element. The outgassing resistive layer is removed from over the outgassing element, and the MEMS substrate is bonded to a front side of the CMOS substrate to enclose a first MEMS device within a first cavity and a second MEMS device within a second cavity. After removing the outgassing resistive layer, the outgassing element releases a gas into the second cavity to increase a second pressure of the second cavity to be greater than a first pressure of the first cavity.
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公开(公告)号：US20200343176A1
公开(公告)日：2020-10-29
申请号：US16927249
申请日：2020-07-13
发明人： Yung-Chi Lin , Hsin-Yu Chen , Lin-Chih Huang , Tsang-Jiuh Wu , Wen-Chih Chiou
IPC分类号： H01L23/528 , H01L27/088 , H01L23/31 , H01L23/48 , H01L23/532 , H01L23/00 , H01L21/768
摘要： A method comprises forming a trench extending through an interlayer dielectric layer over a substrate and partially through the substrate, depositing a photoresist layer over the trench, wherein the photoresist layer partially fills the trench, patterning the photoresist layer to remove the photoresist layer in the trench and form a metal line trench over the interlayer dielectric layer, filling the trench and the metal line trench with a conductive material to form a via and a metal line, wherein an upper portion of the trench is free of the conductive material and depositing a dielectric material over the substrate, wherein the dielectric material is in the upper portion of the trench.
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公开(公告)号：US20190010047A1
公开(公告)日：2019-01-10
申请号：US16114521
申请日：2018-08-28
发明人： Shyh-Wei Cheng , Chih-Yu Wang , Hsi-Cheng Hsu , Hsin-Yu Chen , Ji-Hong Chiang , Jui-Chun Weng , Wei-Ding Wu
CPC分类号： B81B7/0041 , B81B3/0081 , B81B2201/0235 , B81B2201/0242 , B81B2207/012 , B81B2207/07 , B81B2207/09 , B81C1/00293 , B81C2201/013 , B81C2203/0109 , B81C2203/0118 , B81C2203/037 , B81C2203/038 , B81C2203/0735 , H01L28/20
摘要： The present disclosure relates to a micro-electromechanical system (MEMs) package. In some embodiments, the MEMs package has a plurality of conductive interconnect layers disposed within a dielectric structure over an upper surface of a first substrate. A heating element is electrically coupled to a semiconductor device within the first substrate by one or more of the plurality of conductive interconnect layers. The heating element is vertically separated from the first substrate by the dielectric structure. A MEMs substrate is coupled to the first substrate and has a MEMs device. A hermetically sealed chamber surrounding the MEMs device is disposed between the first substrate and the MEMs substrate. An out-gassing material is disposed laterally between the hermetically sealed chamber and the heating element.
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公开(公告)号：US20170203962A1
公开(公告)日：2017-07-20
申请号：US15182754
申请日：2016-06-15
发明人： Shyh-Wei Cheng , Hsi-Cheng Hsu , Hsin-Yu Chen , Ji-Hong Chiang , Jui-Chun Weng , Wei-Ding Wu , Yu-Jui Wu , Ching-Hsiang Hu , Ming-Tsung Chen
CPC分类号： B81C1/00285 , B81B7/0038 , B81B2201/0235 , B81B2201/0242 , B81B2207/012 , B81B2207/07 , B81C2203/0118 , B81C2203/0792
摘要： The present disclosure relates to a MEMS package having an outgassing element configured to adjust a pressure within a hermetically sealed cavity by inducing outgassing of into the cavity, and an associated method. In some embodiments, the method is performed by forming an outgassing element within a passivation layer over a CMOS substrate and forming an outgassing resistive layer to cover the outgassing element. The outgassing resistive layer is removed from over the outgassing element, and the MEMS substrate is bonded to a front side of the CMOS substrate to enclose a first MEMS device within a first cavity and a second MEMS device within a second cavity. After removing the outgassing resistive layer, the outgassing element releases a gas into the second cavity to increase a second pressure of the second cavity to be greater than a first pressure of the first cavity.
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公开(公告)号：US09090452B2
公开(公告)日：2015-07-28
申请号：US14098974
申请日：2013-12-06
发明人： Shyh-Wei Cheng , Jui-Chun Weng , Hsi-Cheng Hsu , Chih-Yu Wang , Chuan-Yi Ko , Ji-Hong Chiang , Chung-Hsien Hung , Hsin-Yu Chen , Chih-Hsien Chen , Yu-Mei Wu , Jong Chen
CPC分类号： B81B3/001 , B81B3/0005
摘要： Embodiments of mechanisms for forming a micro-electro mechanical system (MEMS) device are provided. The MEMS device includes a substrate and a MEMS substrate disposed on the substrate. The MEMS substrate includes a movable element, a fixed element and at least a spring connected to the movable element and the fixed element. The MEMS device also includes a polysilicon layer on the movable element.
摘要翻译： 提供了用于形成微机电系统（MEMS）装置的机构的实施例。 MEMS器件包括设置在衬底上的衬底和MEMS衬底。 MEMS基板包括可移动元件，固定元件和连接到可移动元件和固定元件的至少一个弹簧。 MEMS器件还包括可移动元件上的多晶硅层。
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公开(公告)号：US11726342B2
公开(公告)日：2023-08-15
申请号：US17881439
申请日：2022-08-04
发明人： Hsin-Yu Chen , Chun-Peng Li , Chia-Chun Hung , Ching-Hsiang Hu , Wei-Ding Wu , Jui-Chun Weng , Ji-Hong Chiang , Yen Chiang Liu , Jiun-Jie Chiou , Li-Yang Tu , Jia-Syuan Li , You-Cheng Jhang , Shin-Hua Chen , Lavanya Sanagavarapu , Han-Zong Pan , Hsi-Cheng Hsu
IPC分类号： G02B27/30 , H01L31/0232 , H01L27/146
CPC分类号： G02B27/30 , H01L27/14625 , H01L31/02325
摘要： Disclosed is a method to fabricate a multifunctional collimator structure In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; and a plurality of via holes, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, wherein the substrate has a bulk impurity doping concentration equal to or greater than 1×1019 per cubic centimeter (cm−3) and a first thickness, and wherein the bulk impurity doping concentration and the first thickness of the substrate are configured so as to allow the optical collimator to filter light in a range of wavelengths.
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公开(公告)号：US20210050316A1
公开(公告)日：2021-02-18
申请号：US17073533
申请日：2020-10-19
发明人： Hsiao Yun Lo , Lin-Chih Huang , Tasi-Jung Wu , Hsin-Yu Chen , Yung-Chi Lin , Ku-Feng Yang , Tsang-Jiuh Wu , Wen-Chih Chiou
摘要： A device includes a first side interconnect structure over a first side of a substrate, wherein active circuits are in the substrate and adjacent to the first side of the substrate, a dielectric layer over a second side of the substrate, a pad embedded in the dielectric layer, the pad comprising an upper portion and a bottom portion formed of two different materials and a passivation layer over the dielectric layer.
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公开(公告)号：US10513432B2
公开(公告)日：2019-12-24
申请号：US15904085
申请日：2018-02-23
发明人： Jui-Chun Weng , Lavanya Sanagavarapu , Ching-Hsiang Hu , Wei-Ding Wu , Shyh-Wei Cheng , Ji-Hong Chiang , Hsin-Yu Chen , Hsi-Cheng Hsu
摘要： A method for treating a micro electro-mechanical system (MEMS) component is disclosed. In one example, the method includes the steps of providing a first wafer, treating the first wafer to form cavities and at least an oxide layer on a top surface of the first wafer using a first chemical vapor deposition (CVD) process, providing a second wafer, bonding the second wafer on a top surface of the at least one oxide layer, treating the second wafer to form a first plurality of structures, depositing a layer of Self-Assembling Monolayer (SAM) to a surface of the MEMS component using a second CVD process.
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公开(公告)号：US20170107100A1
公开(公告)日：2017-04-20
申请号：US15176365
申请日：2016-06-08
发明人： Shyh-Wei Cheng , Chih-Yu Wang , Hsi-Cheng Hsu , Hsin-Yu Chen , Ji-Hong Chiang , Jui-Chun Weng , Wei-Ding Wu
CPC分类号： B81B7/0041 , B81B3/0081 , B81B2201/0235 , B81B2201/0242 , B81B2207/012 , B81B2207/07 , B81B2207/09 , B81C1/00293 , B81C2201/013 , B81C2203/0109 , B81C2203/0118 , B81C2203/037 , B81C2203/038 , B81C2203/0735 , H01L28/20
摘要： The present disclosure relates to a MEMs package having a heating element configured to adjust a pressure within a hermetically sealed chamber by inducing out-gassing of into the chamber, and an associated method. In some embodiments, the MEMs package has a CMOS substrate having one or more semiconductor devices arranged within a semiconductor body. A MEMs structure is connected to the CMOS substrate and has a micro-electromechanical (MEMs) device. The CMOS substrate and the MEMs structure form a hermetically sealed chamber abutting the MEMs device. A heating element is electrically coupled to the one or more semiconductor devices and is separated from the hermetically sealed chamber by an out-gassing layer arranged along an interior surface of the hermetically sealed chamber. By operating the heating element to cause the out-gassing layer to release a gas, the pressure of the hermetically sealed chamber can be adjusted after it is formed.
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