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    LITHOGRAPHY SYSTEM AND METHODS
    14.
    发明申请
    LITHOGRAPHY SYSTEM AND METHODS 有权

    公开(公告)号：US20220334472A1

    公开(公告)日：2022-10-20

    申请号：US17232483

    申请日：2021-04-16

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Cheng Hung TSAI ,  Sheng-Kang YU ,  Shang-Chieh CHIEN ,  Heng-Hsin LIU ,  Li-Jui CHEN

    IPC: G03F7/00 ,  G03F7/22 ,  G03F7/20 ,  G03F7/36

    Abstract: A method includes: depositing a mask layer over a substrate; directing first radiation reflected from a central collector section of a sectional collector of a lithography system toward the mask layer according to a pattern; directing second radiation reflected from a peripheral collector section of the sectional collector toward the mask layer according to the pattern, wherein the peripheral collector section is vertically separated from the central collector section by a gap; forming openings in the mask layer by removing first regions of the mask layer exposed to the first radiation and second regions of the mask layer exposed to the second radiation; and removing material of a layer underlying the mask layer exposed by the openings.

    METHOD FOR CONTROLLING EXTREME ULTRAVIOLET LIGHT
    16.
    发明申请
    METHOD FOR CONTROLLING EXTREME ULTRAVIOLET LIGHT 有权

    公开(公告)号：US20220260927A1

    公开(公告)日：2022-08-18

    申请号：US17734774

    申请日：2022-05-02

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Ssu-Yu CHEN ,  Shang-Chieh CHIEN ,  Li-Jui CHEN

    IPC: G03F7/20 ,  H05G2/00

    Abstract: In accordance with some embodiments, a method of controlling an extreme ultraviolet (EUV) radiation in lithography system is provided. The method includes generating a plurality of target droplets. The method also includes generating a pre-pulse and a main pulse from an excitation laser module to generate EUV light and reflecting the EUV light by a collector mirror. The method further includes measuring a separation between a pre-pulse and a main pulse. Moreover, the method includes determining whether the separation between the pre-pulse and the main pulse in the y-axis is changed, if not adjusting a configurable parameter of the excitation laser module to set the variation in the energy of the EUV light within an acceptable range.

    EXTREME ULTRAVIOLET LITHOGRAPHY SYSTEM WITH HEATED TIN VANE BUCKET HAVING A HEATED COVER
    17.
    发明申请
    EXTREME ULTRAVIOLET LITHOGRAPHY SYSTEM WITH HEATED TIN VANE BUCKET HAVING A HEATED COVER 有权

    公开(公告)号：US20220225490A1

    公开(公告)日：2022-07-14

    申请号：US17712373

    申请日：2022-04-04

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Ssu-Yu CHEN ,  Shang-Chieh CHIEN ,  Li-Jui CHEN

    IPC: H05G2/00 ,  G03F7/20

    Abstract: An extreme ultraviolet (EUV) light source and a method for patterning a resist layer on a substrate using the EUV light source are disclosed. For example, the EUV light source includes a droplet generator, a droplet catcher, a laser source, a plurality of vanes, and a bucket. The droplet generator is to generate tin droplets. The droplet catcher is opposite to the droplet generator to catch the tin droplets. The laser source is to generate a laser beam striking the tin droplets to form a plasma. The plurality of vanes are arranged around an axis to collect tin debris created from the plasma. The bucket is connected to the vanes and includes a cover, a vane bucket, and a heater. The cover has an opening. The vane bucket is surrounded by the cover. The heater is on a sidewall of the cover and spaced apart from the droplet catcher.

    METHOD AND APPARATUS FOR CONTROLLING EXTREME ULTRAVIOLET LIGHT
    18.
    发明申请
    METHOD AND APPARATUS FOR CONTROLLING EXTREME ULTRAVIOLET LIGHT 有权

    公开(公告)号：US20210364931A1

    公开(公告)日：2021-11-25

    申请号：US16882086

    申请日：2020-05-22

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Ssu-Yu CHEN ,  Shang-Chieh CHIEN ,  Li-Jui CHEN

    IPC: G03F7/20 ,  H05G2/00

    Abstract: In accordance with some embodiments, a method of controlling an extreme ultraviolet (EUV) radiation in lithography system is provided. The method includes generating a plurality of target droplets. The method also includes generating a pre-pulse and a main pulse from an excitation laser module to generate EUV light and reflecting the EUV light by a collector mirror. The method further includes measuring a separation between a pre-pulse and a main pulse. Moreover, the method includes determining whether the separation between the pre-pulse and the main pulse in the y-axis is changed, if not adjusting a configurable parameter of the excitation laser module to set the variation in the energy of the EUV light within an acceptable range.

    RADIATION SOURCE FOR LITHOGRAPHY EXPOSURE PROCESS
    20.
    发明申请
    RADIATION SOURCE FOR LITHOGRAPHY EXPOSURE PROCESS 审中-公开

    公开(公告)号：US20200033732A1

    公开(公告)日：2020-01-30

    申请号：US16124357

    申请日：2018-09-07

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chieh HSIEH ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Po-Chung CHENG

    IPC: G03F7/20

    Abstract: A method for generating EUV radiation is provided. The method includes generating a target droplet with a target droplet generator. The method further includes recording an image of the target droplet on a first image plane to detect a first position of the target droplet. The method also includes recording an image of the target droplet on a second image plane to detect a second position of the target droplet. In addition, the method includes projecting a laser pulse onto the target droplet when the target droplet is located on a focus plane. The method further includes adjusting at least one parameter of the target droplet generator according to the first position and the second position.

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