公开(公告)号：US20210132497A1

公开(公告)日：2021-05-06

申请号：US16810002

申请日：2020-03-05

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Li-Po YANG ,  Wei-Han LAI ,  Ching-Yu CHANG

IPC: G03F7/038 ,  G03F7/20

Abstract: A negative tone photoresist and method for developing the negative tone photoresist is disclosed. For example, the negative tone photoresist includes a solvent, a dissolution inhibitor, and a polymer. The polymer includes a hydroxyl group. The polymer may be greater than 40 weight per cent of a total weight of the negative tone photoresist.

公开(公告)号：US20240369926A1

公开(公告)日：2024-11-07

申请号：US18310925

申请日：2023-05-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Li-Po YANG ,  Ching-Yu CHANG ,  Kuan-Hsin LO ,  Wei-Han LAI

IPC: G03F7/038 ,  G03F7/20 ,  H01L21/311

Abstract: A method for forming a semiconductor device is provided. The method includes forming a photoresist layer over a substrate, exposing the photoresist layer to radiation to form a pattern therein, and selectively removing portions of the photoresist layer that are not exposed to the radiation to form a patterned photoresist layer. The photoresist layer comprises a fluorine-containing polymer including a crosslinking group and a photoactive compound.

公开(公告)号：US20230350295A1

公开(公告)日：2023-11-02

申请号：US17734981

申请日：2022-05-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Li-Po YANG ,  Wei-Han LAI ,  Ching-Yu CHANG

IPC: G03F7/039 ,  G03F7/20

CPC classification number: G03F7/0392 ,  G03F7/2004

Abstract: A method for forming a semiconductor device is provided. The method includes forming a photoresist layer over a substrate, exposing the photoresist layer to radiation to form a pattern therein, and selectively removing portions of the photoresist layer that are not exposed to the radiation to form a patterned photoresist layer. The photoresist layer comprises a fluorine-containing polymer, a crosslinker and a photoactive compound.

公开(公告)号：US20180174837A1

公开(公告)日：2018-06-21

申请号：US15380911

申请日：2016-12-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Han LAI ,  Chien-Wei WANG ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

IPC: H01L21/033 ,  H01L21/027 ,  H01L21/02 ,  G03F7/16 ,  G03F7/11 ,  G03F7/20

CPC classification number: H01L21/0332 ,  G03F7/11 ,  G03F7/162 ,  G03F7/2004 ,  H01L21/02115 ,  H01L21/02282 ,  H01L21/0274 ,  H01L21/0337

Abstract: Provided is a material composition and method for substrate modification. A substrate is patterned to include a plurality of features. The plurality of features includes a first subset of features having one or more substantially inert surfaces. In various embodiments, a priming material is deposited over the substrate, over the plurality of features, and over the one or more substantially inert surfaces. By way of example, the deposited priming material bonds at least to the one or more substantially inert surfaces. Additionally, the deposited priming material provides a modified substrate surface. After depositing the priming material, a layer is spin-coated over the modified substrate surface, where the spin-coated layer is substantially planar.

公开(公告)号：US20250138428A1

公开(公告)日：2025-05-01

申请号：US19010913

申请日：2025-01-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chien-Wei WANG ,  Wei-Han LAI ,  Ching-Yu CHANG

IPC: G03F7/32 ,  G03F7/11 ,  G03F7/30 ,  H01L21/02 ,  H01L21/027

Abstract: The present disclosure provides resist rinse solutions and corresponding lithography techniques that achieve high pattern structural integrity for advanced technology nodes. An example lithography method includes forming a resist layer over a workpiece, exposing the resist layer to radiation, developing the exposed resist layer using a developer that removes an unexposed portion of the exposed resist layer, thereby forming a patterned resist layer, and rinsing the patterned resist layer using a rinse solution. The developer is an organic solution, and the rinse solution includes water.

公开(公告)号：US20240371640A1

公开(公告)日：2024-11-07

申请号：US18773367

申请日：2024-07-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jing-Hong HUANG ,  Wei-Han LAI ,  Ching-Yu CHANG

IPC: H01L21/027 ,  G03F7/09 ,  G03F7/11 ,  H01L21/3213

Abstract: A method includes providing a layered structure on a substrate, the layered structure including a bottom layer formed over the substrate and a photoresist layer formed over the bottom layer, exposing the photoresist layer to a radiation source, developing the photoresist layer, patterning the bottom layer and removing portions of the substrate through openings in the patterned bottom layer. In some embodiments, a middle layer is provided between the bottom layer and the photoresist layer. The material of the bottom layer includes at least one cross-linking agent that has been functionalized to decrease its affinity to other materials in the bottom layer.

公开(公告)号：US20220365430A1

公开(公告)日：2022-11-17

申请号：US17875322

申请日：2022-07-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Li-Po YANG ,  Wei-Han LAI ,  Ching-Yu CHANG

IPC: G03F7/038 ,  G03F7/20

Abstract: A negative tone photoresist and method for developing the negative tone photoresist is disclosed. For example, the negative tone photoresist includes a solvent, a dissolution inhibitor, and a polymer. The polymer includes a hydroxyl group. The polymer may be greater than 40 weight percent of a total weight of the negative tone photoresist.

公开(公告)号：US20210198468A1

公开(公告)日：2021-07-01

申请号：US17098298

申请日：2020-11-13

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yen-Hao CHEN ,  Wei-Han LAI ,  Ching-Yu CHANG

IPC: C08L25/14 ,  G03F7/004 ,  C08L33/08 ,  C08L33/14 ,  G03F7/20 ,  G03F7/40 ,  G03F7/038

Abstract: Method of manufacturing semiconductor device includes forming photoresist layer over substrate. Photoresist layer is selectively exposed to radiation, and selectively exposed photoresist layer developed. Photoresist composition includes photoactive compound, crosslinker, copolymer. The copolymer is A1 and A2 are independently direct link, C6-C15 phenyl group, C7-C15 benzyl group, C1-C15 alkyl group, C3-C15 cycloalkyl group, C1-C15 hydroxyalkyl group, C2-C15 alkoxy group, C3-C15 alkoxy alkyl group, C2-C15 acetyl group, C3-C15 acetyl alkyl group, C1-C15 carboxyl group, C2-C15 alkyl carboxyl group, C4-C15 cycloalkyl carboxyl group, C3-C15 saturated or unsaturated hydrocarbon ring, C2-C15 hetero chain, C3-C15 heterocyclic ring, or three dimensional ring structure; R1 is thermal or acid labile group including C4-C15 alkyl, cycloalkyl, hydroxyalkyl, alkoxy, or alkoxy alkyl group, or three dimensional ring structure; R2 is substituted or unsubstituted C4-C10 cycloalkyl group; Ra and Rb are independently H or CH3; and 0

公开(公告)号：US20210159087A1

公开(公告)日：2021-05-27

申请号：US16697988

申请日：2019-11-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yen-Hao CHEN ,  Wei-Han LAI ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

IPC: H01L21/321 ,  H01L21/027 ,  H01L21/02

Abstract: A method of manufacturing a semiconductor device is disclosed herein. The method includes forming a first layer of a first planarizing material over a patterned surface of a substrate, forming a second layer of a second planarizing material over the first planarizing layer, crosslinking a portion of the first planarizing material and a portion of the second planarizing material, and removing a portion of the second planarizing material that is not crosslinked. In an embodiment, the method further includes forming a third layer of a third planarizing material over the second planarizing material after removing the portion of the second planarizing material that is not crosslinked. The third planarizing material can include a bottom anti-reflective coating or a spin-on carbon, and an acid or an acid generator. The first planarizing material can include a spin-on carbon, and an acid, a thermal acid generator or a photoacid generator.

公开(公告)号：US20180292752A1

公开(公告)日：2018-10-11

申请号：US15480976

申请日：2017-04-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Li-Po YANG ,  Chien-Wei WANG ,  Wei-Han LAI ,  Chin-Hsiang LIN

IPC: G03F7/075 ,  H01L21/027 ,  H01L21/311 ,  G03F7/11 ,  G03F7/16 ,  G03F7/38 ,  G03F7/038 ,  G03F7/32 ,  G03F7/20

CPC classification number: H01L21/31144 ,  G03F7/0752 ,  G03F7/405 ,  H01L21/0273

Abstract: Methods for forming a semiconductor structure are provided. The method for forming a semiconductor structure includes forming a material layer over a substrate and forming a resist layer over the material layer. The method for forming a semiconductor structure further includes exposing the resist layer to form an exposed portion of the resist layer and forming a treating material layer over the exposed portion and an unexposed portion of the resist layer. In addition, a top surface of the exposed portion of the resist layer reacts with the treating material layer. The method for forming a semiconductor structure further includes removing the treating material layer and removing the unexposed portion of the resist layer to form an opening in the resist layer after the treating material is removed.