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60 条记录 (耗时 0.016 秒)

    Pattern forming apparatus and pattern forming method
    11.
    发明授权
    Pattern forming apparatus and pattern forming method 失效
    图案形成装置和图案形成方法

    公开(公告)号：US06559926B2

    公开(公告)日：2003-05-06

    申请号：US09971663

    申请日：2001-10-09

    申请人： Takako Yamaguchi ,  Ryo Kuroda

    发明人： Takako Yamaguchi ,  Ryo Kuroda

    IPC分类号： G03B2742

    CPC分类号： G03F7/70458 ,  G03B27/42

    摘要： A pattern forming apparatus for forming a pattern on a substrate includes a first exposure section capable of conducting pattern exposure for a predetermined line width, a second exposure section for conducting pattern exposure for a line width greater than the predetermined linewidth of the first exposure section, and a device for detecting the relative positional relationship between the first exposure section and the second exposure section. Pattern exposure is conducted by using the first exposure section and the second exposure section on the basis of the detected positional relationship.

    摘要翻译： 用于在基板上形成图案的图案形成装置包括能够对预定线宽进行图案曝光的第一曝光部，对于第一曝光部的预定线宽大的线宽进行图案曝光的第二曝光部， 以及用于检测第一曝光部分和第二曝光部分之间的相对位置关系的装置。 基于检测到的位置关系，通过使用第一曝光部和第二曝光部进行图案曝光。

    Method of detecting relative position of exposure mask and object to be exposed, alignment method, and exposure method using the same
    12.
    发明申请
    Method of detecting relative position of exposure mask and object to be exposed, alignment method, and exposure method using the same 失效
    检测曝光掩模和待曝光物体的相对位置的方法，对准方法和使用其的曝光方法

    公开(公告)号：US20060152703A1

    公开(公告)日：2006-07-13

    申请号：US10529908

    申请日：2004-05-12

    申请人： Takako Yamaguchi ,  Ryo Kuroda

    发明人： Takako Yamaguchi ,  Ryo Kuroda

    IPC分类号： G03F1/00 ,  G03B27/32

    CPC分类号： G03F7/7035 ,  G03F1/22 ,  G03F1/42 ,  G03F7/2039 ,  G03F9/7038

    摘要： An alignment method for an exposure mask and an object to be exposed, wherein exposure is carried out while the exposure mask having a light blocking film formed at a membrane portion thereof is closely contacted to the object to be exposed and light from a light source is projected to the object to be exposed, through the exposure mask, and wherein alignment of the exposure mask and the object to be exposed is carried out prior to the exposure, the method comprising the steps of preparing an exposure mask having a light blocking film provided on a base material constituting the membrane portion and having a structure for performing position detection, flexing the membrane portion and detecting, by use of the structure, a relative position of the exposure mask and the object to be exposed, in a state in which the exposure mask is contacted to the object to be exposed, and aligning the exposure mask and the object to be exposed, with each other, on the basis of a result of the position detection.

    摘要翻译： 一种用于曝光掩模和待曝光物体的对准方法，其中在其膜部分形成有遮光膜的曝光掩模与待曝光的物体紧密接触并且来自光源的光是 通过曝光掩模投影到待曝光的物体上，并且其中曝光前曝光掩模和待曝光对象的对准在曝光之前进行，该方法包括以下步骤：制备具有遮光膜的曝光掩模 在构成膜部的基材上，具有进行位置检测的结构，弯曲膜部，并且通过使用该结构，在曝光掩模与被曝光物的相对位置之间，在 曝光掩模与要曝光的物体接触，并且基于位置的结果将曝光掩模和待曝光的对象彼此对准 检测。

    Exposure method and exposure apparatus using near-field light and exposure mask
    14.
    发明授权
    Exposure method and exposure apparatus using near-field light and exposure mask 失效
    使用近场光和曝光掩模的曝光方法和曝光装置

    公开(公告)号：US06720115B2

    公开(公告)日：2004-04-13

    申请号：US09795497

    申请日：2001-03-01

    申请人： Yasuhisa Inao ,  Ryo Kuroda ,  Takako Yamaguchi

    发明人： Yasuhisa Inao ,  Ryo Kuroda ,  Takako Yamaguchi

    IPC分类号： G03F900

    CPC分类号： G03F7/7035 ,  B82Y10/00 ,  G03F1/36 ,  G03F1/50 ,  G03F7/70325 ,  G03F7/70558 ,  G03F9/703

    摘要： A photolithography method using near-field light includes a step of controlling the position of an exposure mask and an object to be processed so as to make the object to be located in a region where near-field light is present, and a step of exposing the object to near-field light while controlling the intensity of such light as a function of the aperture density of the exposure mask. The intensity of near-field light is controlled by modifying the aperture width or modifying the transmissivity of the exposure mask depending on the aperture density.

    摘要翻译： 使用近场光的光刻方法包括控制曝光掩模和待处理物体的位置以使物体位于存在近场光的区域的步骤，以及曝光步骤 该对象成为近场光，同时根据曝光掩模的孔径密度控制这种光的强度。 通过根据孔径密度修改孔径宽度或修改曝光掩模的透射率来控制近场光的强度。

    Chemical sensor
    16.
    发明授权
    Chemical sensor 失效
    化学传感器

    公开(公告)号：US07399445B2

    公开(公告)日：2008-07-15

    申请号：US10340152

    申请日：2003-01-10

    申请人： Ryo Kuroda ,  Natsuhiko Mizutani ,  Takako Yamaguchi ,  Yasuhisa Inao ,  Tomohiro Yamada

    发明人： Ryo Kuroda ,  Natsuhiko Mizutani ,  Takako Yamaguchi ,  Yasuhisa Inao ,  Tomohiro Yamada

    IPC分类号： C12Q1/68 ,  G01N1/02

    CPC分类号： G01N21/648 ,  G01N21/554 ,  Y10T436/11

    摘要： A sensor device is formed from a metal film having a plurality of openings, a sensor material positioned within each of the openings, a light source that emits light having a first wavelength, and a light detector that detects light emitted from the light source and transmitted through or reflected from the openings. The plurality of openings are arranged periodically in a first direction in the metal film, and both a size of each of the plurality of openings and an interval thereof in the first direction are equal to or less than the wavelength of the light.

    摘要翻译： 传感器装置由具有多个开口的金属膜形成，位于每个开口内的传感器材料，发射具有第一波长的光的光源和检测从光源发出的光并发射的光检测器 从开口穿过或反射。 多个开口在金属膜中沿第一方向周期性地布置，并且多个开口中的每一个的尺寸和第一方向上的间隔都等于或小于光的波长。

    Near field light probe, near field optical microscope, near field light lithography apparatus, and near field light storage apparatus that have the near field light probe
    17.
    发明授权
    Near field light probe, near field optical microscope, near field light lithography apparatus, and near field light storage apparatus that have the near field light probe 失效
    近场光探针，近场光学显微镜，近场光刻设备以及具有近场光探针的近场光存储装置

    公开(公告)号：US06785445B2

    公开(公告)日：2004-08-31

    申请号：US10107447

    申请日：2002-03-28

    申请人： Ryo Kuroda ,  Takako Yamaguchi ,  Yasuhisa Inao ,  Tomohiro Yamada

    发明人： Ryo Kuroda ,  Takako Yamaguchi ,  Yasuhisa Inao ,  Tomohiro Yamada

    IPC分类号： G02B626

    CPC分类号： G01Q60/22 ,  G02B6/262

    摘要： A near field light probe is capable of emanating a near field light having a sufficient intensity while allowing reduction of aperture size to improve resolution. The near field light probe can be incorporated in a near-field optical microscope, a near field light lithography apparatus, and a near field light storage apparatus. A near field light probe has a configuration in which a light-blocking film is formed with an aperture having slits surrounding the major opening. Light emitted from a light source is coupled into the probe from one side of the light-blocking film, the light being polarized in a predetermined direction with respect to the slits so that a near field light emanates from the major opening.

    摘要翻译： 近场光探测器能够发出具有足够强度的近场光，同时允许减小光圈​​尺寸以提高分辨率。 近场光探测器可以结合在近场光学显微镜，近场光刻设备和近场光存储设备中。 近场光探测器具有其中形成有具有围绕主开口的狭缝的孔的遮光膜的构造。 从光源发射的光从遮光膜的一侧耦合到探针中，光被相对于狭缝沿预定方向极化，使得近场光从主开口发出。