公开(公告)号：US07223668B2

公开(公告)日：2007-05-29

申请号：US10944665

申请日：2004-09-17

申请人： Ichiro Ito ,  Satoshi Shiraki

发明人： Ichiro Ito ,  Satoshi Shiraki

IPC分类号： H01L21/467

CPC分类号： H01L28/24 ,  H01L21/32139

摘要： An Al film is formed on a barrier metal covering a thin film resistor to have a first opening. A photo-resist is formed on the Al film and in the opening, and is patterned to have a second opening having an opening area smaller than that of the first opening and open in the first opening to expose the barrier metal therefrom. Then, the barrier metal is etched through the second opening. Because the barrier metal is etched from an inner portion more than the opening end of the first opening, under-cut of the barrier metal is prevented.

摘要翻译： 在覆盖薄膜电阻器的阻挡金属上形成具有第一开口的Al膜。 在Al膜和开口中形成光致抗蚀剂，并且被图案化以具有开口面积小于第一开口的开口面积并在第一开口中开口的第二开口，以暴露出阻挡金属。 然后，通过第二开口蚀刻阻挡金属。 由于阻挡金属从第一开口的开口端的内部蚀刻，因此防止了阻挡金属的切割。

公开(公告)号：US20050042882A1

公开(公告)日：2005-02-24

申请号：US10944665

申请日：2004-09-17

申请人： Ichiro Ito ,  Satoshi Shiraki

发明人： Ichiro Ito ,  Satoshi Shiraki

IPC分类号： H01L21/02 ,  H01L21/3213 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L28/24 ,  H01L21/32139

摘要： An Al film is formed on a barrier metal covering a thin film resistor to have a first opening. A photo-resist is formed on the Al film and in the opening, and is patterned to have a second opening having an opening area smaller than that of the first opening and open in the first opening to expose the barrier metal therefrom. Then, the barrier metal is etched through the second opening. Because the barrier metal is etched from an inner portion more than the opening end of the first opening, under-cut of the barrier metal is prevented.

摘要翻译： 在覆盖薄膜电阻器的阻挡金属上形成具有第一开口的Al膜。 在Al膜和开口中形成光致抗蚀剂，并且被图案化以具有开口面积小于第一开口的开口面积并在第一开口中开口的第二开口，以暴露出阻挡金属。 然后，通过第二开口蚀刻阻挡金属。 由于阻挡金属从第一开口的开口端的内部蚀刻，因此防止了阻挡金属的切割。

公开(公告)号：US09136362B2

公开(公告)日：2015-09-15

申请号：US13615912

申请日：2012-09-14

申请人： Takeshi Sakai ,  Akira Yamada ,  Shigeki Takahashi ,  Youichi Ashida ,  Satoshi Shiraki

发明人： Takeshi Sakai ,  Akira Yamada ,  Shigeki Takahashi ,  Youichi Ashida ,  Satoshi Shiraki

IPC分类号： H01L29/02 ,  H01L29/739 ,  H01L21/765 ,  H01L29/40 ,  H01L29/417 ,  H01L29/861 ,  H01L29/868 ,  H01L29/06 ,  H01L29/08

CPC分类号： H01L29/7394 ,  H01L21/765 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/404 ,  H01L29/405 ,  H01L29/41725 ,  H01L29/8611 ,  H01L29/868

摘要： A semiconductor device with a lateral element includes a semiconductor substrate, first and second electrodes on the substrate, and a resistive field plate extending from the first electrode to the second electrode. The lateral element passes a current between the first and second electrodes. A voltage applied to the second electrode is less than a voltage applied to the first electrode. The resistive field plate has a first end portion and a second end portion opposite to the first end portion. The second end portion is located closer to the second electrode than the first end portion. An impurity concentration in the second end portion is equal to or greater than 1×1018 cm−3.

摘要翻译： 具有横向元件的半导体器件包括半导体衬底，衬底上的第一和第二电极以及从第一电极延伸到第二电极的电阻场板。 横向元件在第一和第二电极之间通过电流。 施加到第二电极的电压小于施加到第一电极的电压。 电阻场板具有与第一端部相对的第一端部和第二端部。 第二端部比第一端部更靠近第二电极。 第二端部的杂质浓度为1×1018cm-3以上。

公开(公告)号：US08791690B2

公开(公告)日：2014-07-29

申请号：US13150764

申请日：2011-06-01

申请人： Satoshi Shiraki ,  Norihito Tokura ,  Shigeki Takahashi ,  Masahiro Yamamoto ,  Akira Yamada ,  Hiroyasu Kudo ,  Youichi Ashida ,  Akio Nakagawa

发明人： Satoshi Shiraki ,  Norihito Tokura ,  Shigeki Takahashi ,  Masahiro Yamamoto ,  Akira Yamada ,  Hiroyasu Kudo ,  Youichi Ashida ,  Akio Nakagawa

IPC分类号： G01R1/20

摘要： A semiconductor device having a lateral semiconductor element includes a semiconductor substrate, a first electrode on the substrate, a second electrode on the substrate, and an isolation structure located in the substrate to divide the substrate into a first island and a second island electrically insulated from the first island. The lateral semiconductor element includes a main cell located in the first island and a sense cell located in the second island. The main cell causes a first current to flow between the first electrode and the second electrode so that the first current flows in a lateral direction along the surface of the substrate. The first current is detected by detecting a second current flowing though the sense cell.

公开(公告)号：US08604513B2

公开(公告)日：2013-12-10

申请号：US12923469

申请日：2010-09-23

申请人： Youichi Ashida ,  Norihito Tokura ,  Shigeki Takahashi ,  Yoshiaki Nakayama ,  Satoshi Shiraki ,  Kouji Senda

发明人： Youichi Ashida ,  Norihito Tokura ,  Shigeki Takahashi ,  Yoshiaki Nakayama ,  Satoshi Shiraki ,  Kouji Senda

IPC分类号： H01L29/66

CPC分类号： H01L27/1203 ,  H01L21/76264 ,  H01L21/84 ,  H01L29/0634 ,  H01L29/0657 ,  H01L29/0692 ,  H01L29/1608 ,  H01L29/404 ,  H01L29/405 ,  H01L29/407 ,  H01L29/408 ,  H01L29/66128 ,  H01L29/7394 ,  H01L29/7824 ,  H01L29/8611

摘要： A semiconductor device includes: a SOI substrate; a semiconductor element having first and second impurity layers disposed in an active layer of the SOI substrate, the second impurity layer surrounding the first impurity layer; and multiple first and second conductive type regions disposed in a part of the active layer adjacent to an embedded insulation film of the SOI substrate. The first and second conductive type regions are alternately arranged. The first and second conductive type regions have a layout, which corresponds to the semiconductor element.

摘要翻译： 半导体器件包括：SOI衬底; 半导体元件，其具有设置在所述SOI衬底的有源层中的第一和第二杂质层，所述第二杂质层围绕所述第一杂质层; 以及设置在与SOI衬底的嵌入式绝缘膜相邻的有源层的一部分中的多个第一和第二导电类型区域。 交替地布置第一和第二导电类型区域。 第一和第二导电类型区域具有对应于半导体元件的布局。

公开(公告)号：US20130075877A1

公开(公告)日：2013-03-28

申请号：US13615912

申请日：2012-09-14

申请人： Takeshi SAKAI ,  Akira Yamada ,  Shigeki Takahashi ,  Youichi Ashida ,  Satoshi Shiraki

发明人： Takeshi SAKAI ,  Akira Yamada ,  Shigeki Takahashi ,  Youichi Ashida ,  Satoshi Shiraki

IPC分类号： H01L29/861

CPC分类号： H01L29/7394 ,  H01L21/765 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/404 ,  H01L29/405 ,  H01L29/41725 ,  H01L29/8611 ,  H01L29/868

摘要： A semiconductor device with a lateral element includes a semiconductor substrate, first and second electrodes on the substrate, and a resistive field plate extending from the first electrode to the second electrode. The lateral element passes a current between the first and second electrodes. A voltage applied to the second electrode is less than a voltage applied to the first electrode. The resistive field plate has a first end portion and a second end portion opposite to the first end portion. The second end portion is located closer to the second electrode than the first end portion. An impurity concentration in the second end portion is equal to or greater than 1×1018 cm−3.

摘要翻译： 具有横向元件的半导体器件包括半导体衬底，衬底上的第一和第二电极以及从第一电极延伸到第二电极的电阻场板。 横向元件在第一和第二电极之间通过电流。 施加到第二电极的电压小于施加到第一电极的电压。 电阻场板具有与第一端部相对的第一端部和第二端部。 第二端部比第一端部更靠近第二电极。 第二端部的杂质浓度为1×1018cm-3以上。

公开(公告)号：US07821069B2

公开(公告)日：2010-10-26

申请号：US12010111

申请日：2008-01-22

申请人： Satoshi Shiraki ,  Hiroyuki Ban ,  Akira Yamada

发明人： Satoshi Shiraki ,  Hiroyuki Ban ,  Akira Yamada

IPC分类号： H01L23/62

CPC分类号： H01L27/1203 ,  H01L21/84 ,  H01L27/0629 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes: n transistor elements; n resistive elements; and n capacitive elements, each kind of elements coupled in series between the first and second terminals. The gate of each transistor element has a gate pad, and each transistor element includes transistor pads disposed on both sides. Each resistive element includes resistive pads disposed on both sides. Each capacitive element includes capacitive pads disposed on both sides. The gate pad other than the first stage transistor element, a corresponding resistive pad, and a corresponding capacitive pad are electrically coupled. One transistor pad, one resistive pad, and one capacitive pad in the first stage are electrically coupled. One transistor pad, one resistive pad, and one capacitive pad in the n-th stage are electrically coupled.

摘要翻译： 半导体器件包括：n个晶体管元件; n电阻元件; 和n个电容元件，每种元件串联在第一和第二端子之间。 每个晶体管元件的栅极具有栅极焊盘，并且每个晶体管元件包括设置在两侧的晶体管焊盘。 每个电阻元件包括设置在两侧的电阻垫。 每个电容元件包括设置在两侧的电容焊盘。 除了第一级晶体管元件之外的栅极焊盘，对应的电阻焊盘和对应的电容焊盘是电耦合的。 第一级中的一个晶体管焊盘，一个电阻焊盘和一个电容焊盘电耦合。 第n级中的一个晶体管焊盘，一个电阻焊盘和一个电容焊盘电耦合。

公开(公告)号：US06279585B1

公开(公告)日：2001-08-28

申请号：US09390679

申请日：1999-09-07

申请人： Satoshi Shiraki ,  Makoto Ohkawa

发明人： Satoshi Shiraki ,  Makoto Ohkawa

IPC分类号： H01L21302

CPC分类号： H01L27/1203 ,  H01L21/3211 ,  H01L21/32134 ,  H01L21/84

摘要： In a method for manufacturing a semiconductor device, a barrier metal disposed on a metallic thin film for forming a thin film resistor is patterned by wet-etching. The wet-etching produces a residue of the barrier metal. The residue is removed after the oxidation thereof. Accordingly the residue is completely removed. As a result, the patterning of the thin film resistor is stably performed, and short-circuit does not occur to a wiring pattern disposed above the barrier metal.

摘要翻译： 在制造半导体器件的方法中，通过湿法刻蚀图案化设置在用于形成薄膜电阻器的金属薄膜上的阻挡金属。 湿蚀刻产生阻挡金属的残留物。 残余物在氧化后除去。 因此残留物被完全除去。 结果，稳定地执行薄膜电阻器的图案化，并且在布置在阻挡金属之上的布线图案上不会发生短路。

公开(公告)号：US20120139079A1

公开(公告)日：2012-06-07

申请号：US13296832

申请日：2011-11-15

申请人： Norihito TOKURA ,  Satoshi Shiraki ,  Shigeki Takahashi ,  Shinya Sakurai ,  Takashi Suzuki

发明人： Norihito TOKURA ,  Satoshi Shiraki ,  Shigeki Takahashi ,  Shinya Sakurai ,  Takashi Suzuki

IPC分类号： H01L29/47

CPC分类号： H01L21/76283 ,  H01L27/0814 ,  H01L27/1203 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/08 ,  H01L29/405 ,  H01L29/8611

摘要： A diode has a semiconductor layer and cathode and anode electrodes on a surface of the semiconductor layer. The semiconductor layer has cathode and anode regions respectively contacting the cathode and anode electrodes. The anode region has a first diffusion region having high surface concentration, a second diffusion region having intermediate surface concentration, and a third diffusion region having low surface concentration. The first diffusion region is covered with the second and third diffusion regions. The second diffusion region has a first side surface facing the cathode region, a second side surface opposite to the cathode region, and a bottom surface extending between the first and second side surfaces. The third diffusion region covers at least one of the first corner part connecting the first side surface with the bottom surface and the second corner part connecting the second side surface with the bottom surface.

摘要翻译： 二极管在半导体层的表面上具有半导体层和阴极和阳极电极。 半导体层具有分别与阴极和阳极电极接触的阴极和阳极区域。 阳极区域具有表面浓度高的第一扩散区域，具有中间表面浓度的第二扩散区域和具有低表面浓度的第三扩散区域。 第一扩散区被第二和第三扩散区覆盖。 第二扩散区域具有面对阴极区域的第一侧表面，与阴极区域相对的第二侧表面和在第一和第二侧表面之间延伸的底表面。 第三扩散区域覆盖连接第一侧表面与底表面的第一角部和将第二侧表面与底表面连接的第二角部中的至少一个。

公开(公告)号：US08102047B2

公开(公告)日：2012-01-24

申请号：US12801187

申请日：2010-05-27

申请人： Satoshi Shiraki ,  Akira Yamada ,  Hiroyuki Ban

发明人： Satoshi Shiraki ,  Akira Yamada ,  Hiroyuki Ban

IPC分类号： H01L23/34 ,  H01L23/10

CPC分类号： H05K7/1432 ,  H01L24/73 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2924/01046 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H02M7/003 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A load driving device includes: an output power device for driving a load; a driving IC for controlling the output power device, wherein the driving IC is electrically coupled with the output power device through a wire or a connection member; and a first electrode substrate. The output power device and the driving IC are mounted on the first electrode substrate. In this case, the output power device is controlled with high speed, and a mounting area of the output power device and the driving IC is reduced.

摘要翻译： 负载驱动装置包括：用于驱动负载的输出功率装置; 用于控制输出功率器件的驱动IC，其中驱动IC通过导线或连接构件与输出功率器件电耦合; 和第一电极基板。 输出功率器件和驱动IC安装在第一电极基板上。 在这种情况下，输出功率器件被高速控制，并且输出功率器件和驱动IC的安装面积减小。