公开(公告)号：US20110214685A1

公开(公告)日：2011-09-08

申请号：US12898185

申请日：2010-10-05

申请人： Soichi KUMON ,  Takashi Saio ,  Shinobu Arata ,  Hidehisa Nanai ,  Yoshinori Akamatsu ,  Shigeo Hamaguchi ,  Kazuhiko Maeda

发明人： Soichi KUMON ,  Takashi Saio ,  Shinobu Arata ,  Hidehisa Nanai ,  Yoshinori Akamatsu ,  Shigeo Hamaguchi ,  Kazuhiko Maeda

IPC分类号： B08B3/00 ,  C11D3/20

CPC分类号： H01L21/02052 ,  B08B3/00 ,  C09D183/04 ,  C11D3/162 ,  C11D7/5022 ,  H01L21/00 ,  H01L21/02054

摘要： A cleaning agent for a silicon wafer (a first cleaning agent) contains at least a water-based cleaning liquid and a water-repellent cleaning liquid for providing at least a recessed portion of an uneven pattern with water repellency during a cleaning process. The water-based cleaning liquid is a liquid in which a water-repellent compound having a reactive moiety chemically bondable to Si element in the silicon wafer and a hydrophobic group, and an organic solvent including at least an alcoholic solvent are mixed and contained. With this cleaning agent, the cleaning process which tends to induce a pattern collapse can be improved.

摘要翻译： 一种用于硅晶片（第一清洁剂）的清洁剂至少含有一种水基清洗液和一种防水清洗液，用于在清洁过程中至少提供具有防水性的凹凸图案的凹陷部分。 水性清洗液是将具有与硅晶片中的Si元素和疏水性基团化学结合的反应性部分的防水化合物和至少含有醇溶剂的有机溶剂混合并包含的液体。 利用该清洁剂，可以提高倾向于引起图案塌陷的清洁处理。

公开(公告)号：US09090782B2

公开(公告)日：2015-07-28

申请号：US13703593

申请日：2011-06-15

申请人： Takashi Saio ,  Soichi Kumon ,  Masanori Saito ,  Shinobu Arata ,  Hidehisa Nanai

发明人： Takashi Saio ,  Soichi Kumon ,  Masanori Saito ,  Shinobu Arata ,  Hidehisa Nanai

IPC分类号： C09D7/12 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3105 ,  C07F7/10 ,  C07F7/12

CPC分类号： C09D7/1233 ,  C07F7/10 ,  C07F7/12 ,  C09D7/63 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/306 ,  H01L21/3105

摘要： The present invention relates to a method for cleaning wafers while preventing pattern collapse of the wafers in semiconductor device fabrication, the wafer having at its surface an uneven pattern and containing silicon element at least on surfaces of recessed portions. Provided is: a liquid chemical for forming a protective film which allows efficient cleaning; and a method for cleaning wafers, using the liquid chemical. A liquid chemical for forming a water repellent protective film is provided for forming a protective film on a wafer (having at its surface an uneven pattern and containing silicon element at least at a part of the uneven pattern), the protective film being formed at least on surfaces of recessed portions of the uneven pattern at the time of cleaning the wafer. The liquid chemical contains a dialkylsilyl compound represented by the formula [1] and does not contain an acid and a base. R2(H)SiX  [1]

摘要翻译： 本发明涉及一种在半导体器件制造中防止晶片破裂的同时清洁晶片的方法，晶片在其表面处具有不均匀的图案并至少在凹部的表面上含有硅元件。 提供：用于形成保护膜的液体化学品，其允许有效的清洁; 以及使用液体化学品清洗晶片的方法。 提供一种用于形成防水保护膜的液体化学品，用于在晶片上形成保护膜（在其表面具有不均匀图案并且至少在不均匀图案的一部分处含有硅元素），保护膜至少形成 在清洁晶片时在凹凸图案的凹部的表面上。 液体化学品含有由式[1]表示的二烷基甲硅烷基化合物，不含有酸和碱。 R2（H）SiX [1]

公开(公告)号：US20130104931A1

公开(公告)日：2013-05-02

申请号：US13807708

申请日：2011-06-15

申请人： Shinobu Arata ,  Masanori Saito ,  Takashi Saio ,  Soichi Kumon ,  Hidehisa Nanai

发明人： Shinobu Arata ,  Masanori Saito ,  Takashi Saio ,  Soichi Kumon ,  Hidehisa Nanai

IPC分类号： C09D5/38

CPC分类号： C09D5/38 ,  H01L21/02068 ,  H01L21/321

摘要： Disclosed is a liquid chemical for forming a water repellent protective film at least on surfaces of recessed portions of a metal-based wafer, the liquid chemical for forming a water repellent protective film being characterized by comprising a surfactant which has an HLB value of 0.001-10 according to Griffin's method and includes a hydrophobic moiety having a C6-C18 hydrocarbon group and water, and characterized in that the concentration of the surfactant in the liquid chemical is not smaller than 0.00001 mass % and not larger than the saturated concentration relative to 100 mass % of the total amount of the liquid chemical. This liquid chemical can improve a cleaning step which tends to induce a metal-based wafer to cause a pattern collapse.

摘要翻译： 公开了一种用于在至少在金属基晶片的凹部的表面上形成防水保护膜的液体化学品，用于形成防水保护膜的液体化学品的特征在于包含HLB值为0.001- 10，根据Griffin的方法，包括具有C6-C18烃基和水的疏水部分，其特征在于，液体化学品中表面活性剂的浓度不小于0.00001质量％且不大于相对于100的饱和浓度 液体化学品总量的质量％。 这种液体化学品可以改善易于引起金属基晶片导致图案塌陷的清洁步骤。

公开(公告)号：US20130092191A1

公开(公告)日：2013-04-18

申请号：US13703593

申请日：2011-06-15

申请人： Takashi Saio ,  Soichi Kumon ,  Masanori Saito ,  Shinobu Arata ,  Hidehisa Nanai

发明人： Takashi Saio ,  Soichi Kumon ,  Masanori Saito ,  Shinobu Arata ,  Hidehisa Nanai

IPC分类号： C09D7/12 ,  C07F7/12 ,  C07F7/10

CPC分类号： C09D7/1233 ,  C07F7/10 ,  C07F7/12 ,  C09D7/63 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/306 ,  H01L21/3105

摘要： The present invention relates to a method for cleaning wafers while preventing pattern collapse of the wafers in semiconductor device fabrication, the wafer having at its surface an uneven pattern and containing silicon element at least on surfaces of recessed portions. Provided is: a liquid chemical for forming a protective film which allows efficient cleaning; and a method for cleaning wafers, using the liquid chemical. A liquid chemical for forming a water repellent protective film is provided for forming a protective film on a wafer (having at its surface an uneven pattern and containing silicon element at least at a part of the uneven pattern), the protective film being formed at least on surfaces of recessed portions of the uneven pattern at the time of cleaning the wafer. The liquid chemical contains a dialkylsilyl compound represented by the formula [1] and does not contain an acid and a base. R2(H)SiX   [1]

摘要翻译： 本发明涉及一种在半导体器件制造中防止晶片破裂的同时清洁晶片的方法，晶片在其表面处具有不均匀的图案并至少在凹部的表面上含有硅元件。 提供：用于形成保护膜的液体化学品，其允许有效的清洁; 以及使用液体化学品清洗晶片的方法。 提供一种用于形成防水保护膜的液体化学品，用于在晶片上形成保护膜（在其表面具有不均匀图案并且至少在不均匀图案的一部分处含有硅元素），保护膜至少形成 在清洁晶片时在凹凸图案的凹部的表面上。 液体化学品含有由式[1]表示的二烷基甲硅烷基化合物，不含有酸和碱。 R2（H）SiX [1]

公开(公告)号：US09349582B2

公开(公告)日：2016-05-24

申请号：US13458119

申请日：2012-04-27

申请人： Soichi Kumon ,  Takashi Saio ,  Masanori Saito ,  Shinobu Arata

发明人： Soichi Kumon ,  Takashi Saio ,  Masanori Saito ,  Shinobu Arata

IPC分类号： C03C23/00 ,  C23G1/02 ,  B08B7/00 ,  B08B9/00 ,  B08B3/00 ,  H01L21/02 ,  H01L21/321 ,  C11D1/00 ,  C11D1/04 ,  C11D1/34 ,  C11D1/40 ,  C11D1/58 ,  C11D3/20 ,  C11D3/28 ,  C11D3/34 ,  C11D3/36 ,  C11D3/43 ,  C11D11/00

CPC分类号： C09D5/00 ,  C11D1/004 ,  C11D1/006 ,  C11D1/04 ,  C11D1/342 ,  C11D1/40 ,  C11D1/58 ,  C11D3/2079 ,  C11D3/28 ,  C11D3/3427 ,  C11D3/361 ,  C11D3/43 ,  C11D11/0047 ,  H01L21/02052 ,  H01L21/02068 ,  H01L21/02093 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/321

摘要： A liquid chemical for forming a water repellent protecting film on a wafer having at its surface an uneven pattern and containing at least one kind of element selected from the group consisting of titanium, tungsten, aluminum, copper, tin, tantalum and ruthenium at surfaces of recessed portions of the uneven pattern, the water repellent protecting film being formed at least on the surfaces of the recessed portions. The liquid chemical is characterized by including: a water repellent protecting film forming agent; and water, and characterized in that the water repellent protecting film forming agent is at least one selected from compounds represented by the following general formula [1] and salt compounds thereof and that the concentration of the water relative to the total quantity of a solvent contained in the liquid chemical is not smaller than 50 mass %.

摘要翻译： 一种用于在晶片上形成防水保护膜的液体化学品，其表面具有不均匀图案，并且含有选自钛，钨，铝，铜，锡，钽和钌中的至少一种元素。 凹凸图案的凹部，防水保护膜至少形成在凹部的表面上。 液体化学品的特征在于包括：防水保护膜形成剂; 和水，其特征在于防水保护膜形成剂为选自下列通式[1]表示的化合物及其盐化合物中的至少一种，并且水相对于所含溶剂总量的浓度 在液体化学品中不低于50质量％。

公开(公告)号：US08623464B2

公开(公告)日：2014-01-07

申请号：US12867851

申请日：2009-02-24

申请人： Shigeo Hamaguchi ,  Yukihiro Ougitani ,  Yoshinori Akamatsu ,  Shinobu Arata

发明人： Shigeo Hamaguchi ,  Yukihiro Ougitani ,  Yoshinori Akamatsu ,  Shinobu Arata

IPC分类号： B05D1/02

CPC分类号： C03C17/002 ,  C03C17/322

摘要： According to a first aspect of the present invention, a process for production of a water-absorbing article including a substrate and a coating film formed on the substrate and formed of a water-absorbing urethane resin is characterized in that: the process comprises an application step of applying a coating liquid to the substrate; the application step includes a step of supplying the coating liquid from a nozzle disposed above the substrate to a surface of the substrate conveyed horizontally; the coating liquid includes a solid matter and a solvent; the solid matter includes a mixture of a polyisocyanate, a polyol having ethylene oxide and a hydrophobic polyol; a concentration of the solid matter in the coating liquid is adjusted within a range from 5 to 30% in mass; and a viscosity of the coating liquid is adjusted within a range from 1 to 3 mPa·s.

摘要翻译： 根据本发明的第一方面，一种吸水性物品的制造方法，其特征在于，在所述基材上形成的基材和形成在所述基材上的吸水性聚氨酯树脂形成的涂膜，其特征在于： 将涂布液施加到基板的步骤; 所述施加步骤包括将涂布液从设置在所述基板上方的喷嘴供给到水平输送的所述基板的表面的步骤; 涂布液包括固体物质和溶剂; 固体物质包括多异氰酸酯，具有环氧乙烷的多元醇和疏水多元醇的混合物; 将涂布液中的固体物质的浓度调整为5〜30质量％的范围; 将涂布液的粘度调节在1〜3mPa·s的范围内。

公开(公告)号：US20100310779A1

公开(公告)日：2010-12-09

申请号：US12867851

申请日：2009-02-24

申请人： Shigeo Hamaguchi ,  Yukihiro Ougitani ,  Yoshinori Akamatsu ,  Shinobu Arata

发明人： Shigeo Hamaguchi ,  Yukihiro Ougitani ,  Yoshinori Akamatsu ,  Shinobu Arata

IPC分类号： B05D1/02

CPC分类号： C03C17/002 ,  C03C17/322

摘要： According to a first aspect of the present invention, a process for production of a water-absorbing article including a substrate and a coating film formed on the substrate and formed of a water-absorbing urethane resin is characterized in that: the process comprises an application step of applying a coating liquid to the substrate; the application step includes a step of supplying the coating liquid from a nozzle disposed above the substrate to a surface of the substrate conveyed horizontally; the coating liquid includes a solid matter and a solvent; the solid matter includes a mixture of a polyisocyanate, a polyol having ethylene oxide and a hydrophobic polyol; a concentration of the solid matter in the coating liquid is adjusted within a range from 5 to 30% in mass; and a viscosity of the coating liquid is adjusted within a range from 1 to 3 mPa·s.

摘要翻译： 根据本发明的第一方面，一种吸水性物品的制造方法，其特征在于，在所述基材上形成的基材和形成在所述基材上的吸水性聚氨酯树脂形成的涂膜，其特征在于： 将涂布液施加到基板的步骤; 所述施加步骤包括将涂布液从设置在所述基板上方的喷嘴供给到水平输送的所述基板的表面的步骤; 涂布液包括固体物质和溶剂; 固体物质包括多异氰酸酯，具有环氧乙烷的多元醇和疏水多元醇的混合物; 将涂布液中的固体物质的浓度调整为5〜30质量％的范围; 将涂布液的粘度调节在1〜3mPa·s的范围内。