公开(公告)号：US08937014B2

公开(公告)日：2015-01-20

申请号：US13879175

申请日：2011-08-31

申请人： Takashi Tanaka ,  Yusuke Saito ,  Mitsuaki Iwashita

发明人： Takashi Tanaka ,  Yusuke Saito ,  Mitsuaki Iwashita

IPC分类号： H01L21/44 ,  H01L21/67 ,  C23C18/16 ,  H01L21/288

CPC分类号： H01L21/6723 ,  C23C18/1619 ,  C23C18/1653 ,  C23C18/1675 ,  C23C18/1676 ,  C23C18/168 ,  C23C18/50 ,  H01L21/288

摘要： A liquid treatment apparatus of continuously performing a plating process on multiple substrates includes a temperature controlling container for accommodating a plating liquid; a temperature controller for controlling a temperature of the plating liquid in the temperature controlling container; a holding unit for holding the substrates one by one at a preset position; a nozzle having a supply hole through which the temperature-controlled plating liquid in the temperature controlling container is discharged to a processing surface of the substrate; a pushing unit for pushing the temperature-controlled plating liquid in the temperature controlling container toward the supply hole of the nozzle; and a supply control unit for controlling a timing when the plating liquid is pushed by the pushing unit. The temperature controller controls the temperature of the plating liquid in the temperature controlling container based on the timing when the plating liquid is pushed by the pushing unit.

摘要翻译： 在多个基板上连续进行电镀处理的液体处理装置包括：容纳电镀液的温度控制容器; 温度控制器，用于控制温度控制容器中的电镀液的温度; 保持单元，用于将预定位置一个接一个地保持; 具有供给孔的喷嘴，所述温度控制容器中的所述温度控制电镀液通过所述供给孔排出到所述基板的处理面; 推压单元，用于将温度控制容器中的温度控制电镀液朝向喷嘴的供给孔推动; 以及供应控制单元，用于控制当推动单元推动电镀液体时的定时。 温度控制器基于由推动单元推动电镀液的时机，控制温度控制容器中的电镀液的温度。

公开(公告)号：US20140120264A1

公开(公告)日：2014-05-01

申请号：US14128109

申请日：2012-06-07

申请人： Yuichiro Inatomi ,  Takashi Tanaka ,  Osamu Kuroda ,  Mitsuaki Iwashita ,  Yusuke Saito

发明人： Yuichiro Inatomi ,  Takashi Tanaka ,  Osamu Kuroda ,  Mitsuaki Iwashita ,  Yusuke Saito

IPC分类号： B05C11/10

CPC分类号： B05C11/1039 ,  C23C18/1619 ,  C23C18/1632 ,  C23C18/165 ,  C23C18/168 ,  C23C18/1682 ,  C23C18/1683 ,  C23C18/32

摘要： A plating apparatus 20 has a substrate holding/rotating device 110 configured to hold and rotate a substrate 2 and a plating liquid supplying device 30 configured to supply a plating liquid 35 onto the substrate 2. The plating liquid supplying device 30 has a supply tank 31 configured to store therein the plating liquid 35 to be supplied onto the substrate 2, a discharge nozzle 32 configured to discharge the plating liquid 35 onto the substrate 2 and a plating liquid supplying line 33 through which the plating liquid 35 within the supply tank 31 is supplied into the discharge nozzle 32. Further, an ammonia gas storage unit 170 is connected to the supply tank 31, and a concentration of an ammonia component within the plating liquid 35 stored in the supply tank 31 can be maintained within a preset target range.

摘要翻译： 电镀装置20具有：基板保持旋转装置110，被配置为保持和旋转基板2;以及电镀液供给装置30，其被配置为将电镀液体35供给到基板2上。电镀液供给装置30具有供给槽31 被配置为在其中存储供给到基板2上的镀液35，将镀液33排出到基板2上的排出喷嘴32和供给槽31内的镀液35通过该电镀液供给路33 供给到排出喷嘴32.此外，氨气体收容部170与供给罐31连接，能够将储存在供给槽31内的镀液35内的氨成分浓度维持在预先设定的目标范围内。

公开(公告)号：US20140148006A1

公开(公告)日：2014-05-29

申请号：US13879175

申请日：2011-08-31

申请人： Takashi Tanaka ,  Yusuke Saito ,  Mitsuaki Iwashita

发明人： Takashi Tanaka ,  Yusuke Saito ,  Mitsuaki Iwashita

IPC分类号： H01L21/67 ,  H01L21/288

CPC分类号： H01L21/6723 ,  C23C18/1619 ,  C23C18/1653 ,  C23C18/1675 ,  C23C18/1676 ,  C23C18/168 ,  C23C18/50 ,  H01L21/288

摘要： A liquid treatment apparatus of continuously performing a plating process on multiple substrates includes a temperature controlling container for accommodating a plating liquid; a temperature controller for controlling a temperature of the plating liquid in the temperature controlling container; a holding unit for holding the substrates one by one at a preset position; a nozzle having a supply hole through which the temperature-controlled plating liquid in the temperature controlling container is discharged to a processing surface of the substrate; a pushing unit for pushing the temperature-controlled plating liquid in the temperature controlling container toward the supply hole of the nozzle; and a supply control unit for controlling a timing when the plating liquid is pushed by the pushing unit. The temperature controller controls the temperature of the plating liquid in the temperature controlling container based on the timing when the plating liquid is pushed by the pushing unit.

摘要翻译： 在多个基板上连续进行电镀处理的液体处理装置包括：容纳电镀液的温度控制容器; 温度控制器，用于控制温度控制容器中的电镀液的温度; 保持单元，用于将预定位置一个接一个地保持; 具有供给孔的喷嘴，所述温度控制容器中的所述温度控制电镀液通过所述供给孔排出到所述基板的处理面; 推压单元，用于将温度控制容器中的温度控制电镀液朝向喷嘴的供给孔推动; 以及供应控制单元，用于控制当推动单元推动电镀液体时的定时。 温度控制器基于由推动单元推动电镀液的时机，控制温度控制容器中的电镀液的温度。

公开(公告)号：US20100015791A1

公开(公告)日：2010-01-21

申请号：US12405620

申请日：2009-03-17

申请人： Takashi Tanaka ,  Yusuke Saito ,  Mitsuaki Iwashita

发明人： Takashi Tanaka ,  Yusuke Saito ,  Mitsuaki Iwashita

IPC分类号： H01L21/3205 ,  B05C5/00 ,  B05B7/16

CPC分类号： C25D17/001 ,  H01L21/288 ,  H01L21/76849

摘要： A film of uniform thickness can be formed on the entire surface of a substrate. A processing solution supply apparatus includes: a nozzle provided with a supply hole for discharging a plating solution toward a processing surface of a substrate held in a substantially horizontal direction; a temperature controller for accommodating therein the plating solution in an amount necessary for processing a preset number of substrates, for controlling a temperature of the accommodated plating solution up to a preset temperature; a heat insulator disposed between the nozzle and the temperature controller, for maintaining the plating solution, whose temperature has been controlled by the temperature controller, at the preset temperature; and a transporting mechanism for transporting the plating solution, whose temperature has been controlled up to the preset temperature by the temperature controller, toward the supply hole of the nozzle via the heat insulator.

摘要翻译： 可以在基板的整个表面上形成均匀厚度的膜。 一种处理液供给装置，包括：喷嘴，具有用于向保持在大致水平方向的基板的处理面排出电镀液的供给孔; 温度控制器，用于在其中容纳处理预设数量的基板所需的量的电镀液，用于将所容纳的电镀液的温度控制到预设温度; 设置在喷嘴和温度控制器之间的隔热件，用于将温度由温度控制器控制的电镀液保持在预设温度; 以及传送机构，其通过温度控制器将温度被控制到预设温度的电镀液通过隔热件输送到喷嘴的供给孔。

公开(公告)号：US20100062159A1

公开(公告)日：2010-03-11

申请号：US12405468

申请日：2009-03-17

申请人： Takashi Tanaka ,  Yusuke Saito ,  Mitsuaki Iwashita

发明人： Takashi Tanaka ,  Yusuke Saito ,  Mitsuaki Iwashita

IPC分类号： B05D3/04

CPC分类号： C23C18/1628 ,  C23C18/1632 ,  C23C18/1678 ,  C23C18/1682 ,  C23C18/31 ,  C23C18/38

摘要： A cap metal forming method capable of obtaining a uniform film thickness on the entire surface of a substrate is provided. A method for forming a cap metal on a processing surface of a substrate provided with two or more regions having different water-repellent properties, includes: holding the substrate horizontally by a rotatable holding mechanism installed in an inner chamber; supplying a gas between the inner chamber and an outer chamber covering the inner chamber via a gas supply hole provided in a top surface of the outer chamber; forming a pressure gradient between the inner chamber and the outer chamber; and supplying a plating solution to a preset position on the processing surface of the substrate after a pressure of the gas inside the inner chamber reaches a preset value so as to form the cap metal on at least one of the regions.

摘要翻译： 提供能够在基板的整个表面上获得均匀的膜厚度的盖金属成形方法。 一种在具有不同斥水性的两个以上的区域的基板的加工面上形成盖金属的方法，其特征在于，包括：通过安装在内室中的旋转保持机构水平地保持基板; 通过设置在所述外室的上表面中的气体供给孔，在所述内室和覆盖所述内室的外室之间供给气体; 在所述内室和所述外室之间形成压力梯度; 以及在所述内室中的气体的压力达到预设值之后，将所述电镀溶液供应到所述基板的处理表面上的预定位置，以便在所述至少一个所述区域上形成所述盖金属。

公开(公告)号：US08999432B2

公开(公告)日：2015-04-07

申请号：US12405468

申请日：2009-03-17

申请人： Takashi Tanaka ,  Yusuke Saito ,  Mitsuaki Iwashita

发明人： Takashi Tanaka ,  Yusuke Saito ,  Mitsuaki Iwashita

IPC分类号： B05D5/12 ,  B05C11/00 ,  B05B13/04 ,  B05C5/00 ,  C23C18/38 ,  C23C18/16

CPC分类号： C23C18/1628 ,  C23C18/1632 ,  C23C18/1678 ,  C23C18/1682 ,  C23C18/31 ,  C23C18/38

摘要： A cap metal forming method capable of obtaining a uniform film thickness on the entire surface of a substrate is provided. A method for forming a cap metal on a processing surface of a substrate provided with two or more regions having different water-repellent properties, includes: holding the substrate horizontally by a rotatable holding mechanism installed in an inner chamber; supplying a gas between the inner chamber and an outer chamber covering the inner chamber via a gas supply hole provided in a top surface of the outer chamber; forming a pressure gradient between the inner chamber and the outer chamber; and supplying a plating solution to a preset position on the processing surface of the substrate after a pressure of the gas inside the inner chamber reaches a preset value so as to form the cap metal on at least one of the regions.

摘要翻译： 提供能够在基板的整个表面上获得均匀的膜厚度的盖金属成形方法。 一种在具有不同斥水性的两个以上的区域的基板的加工面上形成盖金属的方法，其特征在于，包括：通过安装在内室中的旋转保持机构水平地保持基板; 通过设置在所述外室的上表面中的气体供给孔，在所述内室和覆盖所述内室的外室之间供给气体; 在所述内室和所述外室之间形成压力梯度; 以及在所述内室中的气体的压力达到预设值之后，将所述电镀溶液供应到所述基板的处理表面上的预定位置，以便在所述至少一个所述区域上形成所述盖金属。

公开(公告)号：US20070128373A1

公开(公告)日：2007-06-07

申请号：US11606158

申请日：2006-11-30

申请人： Kenichi Hara ,  Mitsuaki Iwashita ,  Takehiko Orii ,  Takayuki Toshima

发明人： Kenichi Hara ,  Mitsuaki Iwashita ,  Takehiko Orii ,  Takayuki Toshima

IPC分类号： B05D5/12 ,  B05D3/04 ,  B05D1/18 ,  B05C11/00 ,  B05B3/00

CPC分类号： H01L21/6723 ,  C23C18/1628 ,  C23C18/1676 ,  C23C18/168 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67248

摘要： An electroless plating apparatus which supplies a plating solution to a top surface of a substrate to effect electroless plating, comprises a substrate support section which supports a substrate, a plating-solution retaining section which retains the plating solution to be supplied to the top surface of the substrate, a plating-solution feeding pipe which guides the plating solution from the plating-solution retaining section to the top surface of the substrate supported by the substrate support section, a plating-solution temperature controlling mechanism which controls a temperature of the plating solution flowing in the plating-solution feeding pipe, and a suction mechanism which sucks the plating solution in the plating-solution feeding pipe toward the plating-solution retaining section when feeding of the plating solution to the top surface of the substrate through the plating-solution feeding pipe is stopped.

摘要翻译： 向基板的上表面供给电镀液的无电解电镀装置包括：支撑基板的基板支撑部，保持要供给到基板的上表面的电镀液的电镀液保持部; 基板，将电镀液从电镀液保持部引导到由基板支撑部支撑的基板的上表面的电镀液供给管，控制电镀液的温度的电镀液温度控制机构 在电镀溶液供给管中流动的吸附机构，在将电镀液通过电镀液供给到基板的上表面时，将电镀液供给管内的电镀液吸附到电镀液保持部的吸引机构 进料管停止。

公开(公告)号：US10199240B2

公开(公告)日：2019-02-05

申请号：US13482318

申请日：2012-05-29

申请人： Hidekazu Hayashi ,  Yohei Sato ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Kazuyuki Mitsuoka ,  Mitsuaki Iwashita ,  Takehiko Orii ,  Gen You ,  Hiroki Ohno ,  Takayuki Toshima

发明人： Hidekazu Hayashi ,  Yohei Sato ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Kazuyuki Mitsuoka ,  Mitsuaki Iwashita ,  Takehiko Orii ,  Gen You ,  Hiroki Ohno ,  Takayuki Toshima

IPC分类号： H01L21/67 ,  H01L21/02 ,  B08B7/00

摘要： A substrate processing method and apparatus which can remove an anti-drying liquid, which has entered a three-dimensional pattern with recessed portions formed in a substrate, in a relatively short time. The substrate processing method includes the steps of: carrying a substrate, having a three-dimensional pattern formed in a surface, into a processing container, said pattern being covered with an anti-drying liquid that has entered the recessed portions of the pattern; heating the substrate and supplying a pressurizing gas or a fluid in a high-pressure state into the processing container, thereby forming a high-pressure atmosphere in the processing container before the anti-drying liquid vaporizes to such an extent as to cause pattern collapse and bringing the anti-drying liquid into a high-pressure state while keeping the liquid in the recessed portions of the pattern; and thereafter discharging a fluid in a high-pressure state or a gaseous state from the processing container.

公开(公告)号：US08465596B2

公开(公告)日：2013-06-18

申请号：US13039361

申请日：2011-03-03

申请人： Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazuyuki Mitsuoka ,  Hidekazu Okamoto ,  Hideo Namatsu

发明人： Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazuyuki Mitsuoka ,  Hidekazu Okamoto ,  Hideo Namatsu

IPC分类号： B08B5/00

CPC分类号： B08B5/00 ,  B08B13/00

摘要： Disclosed is a supercritical processing apparatus and a supercritical processing method for suppressing the pattern collapse or the injection of material constituting a processing liquid into a substrate. A processing chamber receives a substrate subjected to a processing with supercritical fluid, and a liquid supply unit supplies a processing liquid including a fluorine compound to the processing chamber. A liquid discharge unit discharges the supercritical fluid from the processing chamber, a pyrolysis ingredient removing unit removes an ingredient facilitating the pyrolysis of a liquid from the processing chamber or from the liquid supplied from the liquid supply unit, and a to heating unit heats the processing liquid including a fluorine compound of hydrofluoro ether or hydrofluoro carbon.

摘要翻译： 公开了一种超临界处理装置和超临界处理方法，用于抑制图案坍塌或将构成处理液的材料注入基板。 处理室接受用超临界流体处理的基板，液体供给单元向处理室供给包含氟化合物的处理液。 液体排出单元从处理室排出超临界流体，热解成分除去单元去除促进来自处理室的液体的热分解或从液体供应单元供应的液体的热分解，加热单元加热处理 包括氟氟醚或氢氟碳的氟化合物的液体。

公开(公告)号：US20130019905A1

公开(公告)日：2013-01-24

申请号：US13420870

申请日：2012-03-15

申请人： Linan JI ,  Hidekazu Hayashi ,  Hiroshi Tomita ,  Hisashi Okuchi ,  Yohei Sato ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazuyuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

发明人： Linan JI ,  Hidekazu Hayashi ,  Hiroshi Tomita ,  Hisashi Okuchi ,  Yohei Sato ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazuyuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

IPC分类号： B08B3/10 ,  F26B3/00

CPC分类号： H01L21/02 ,  F26B21/10 ,  F26B21/14 ,  F26B23/028 ,  F26B2200/04 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/02101 ,  H01L21/67034

摘要： According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method further comprises performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.

摘要翻译： 根据一个实施方案，一种用于半导体衬底的超临界干燥方法包括将半导体衬底以一种状态将半导体衬底引入室中，该半导体衬底的表面被醇润湿，用半导体衬底上的醇代替超临界流体碳 通过将半导体衬底浸渍到腔室中的超临界流体中，并且将超临界流体和醇从腔室排出并且减小腔室内的压力，从而将二氧化碳稀释。 该方法还包括在减小室内的压力之后，通过向室内供应氧气或臭氧气体进行烘烤处理。