公开(公告)号：US4487678A

公开(公告)日：1984-12-11

申请号：US597749

申请日：1984-04-06

申请人： Minori Noguchi ,  Toru Otsubo ,  Susumu Aiuchi ,  Takashi Kamimura ,  Teru Fujii

发明人： Minori Noguchi ,  Toru Otsubo ,  Susumu Aiuchi ,  Takashi Kamimura ,  Teru Fujii

IPC分类号： H01J37/18 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/677 ,  C23C15/00

CPC分类号： H01L21/302 ,  H01J37/185 ,  H01L21/67069 ,  H01L21/67126 ,  H01L21/67745

摘要： The invention is directed to a dry-etching apparatus used for etching an aluminum wiring film formed on a wafer, and more particularly to a dry-etching apparatus which can remove chlorides deposited on the surface of the wafer during the dry etching thereof, as well as an etching resist film, without having to take the wafer out. This dry-etching apparatus is provided with an etching chamber, a vacuum antechamber attached to the etching chamber by a gate valve, and a post-treatment chamber attached to the vacuum antechamber. The apparatus is so formed that etched wafers removed to the vacuum antechamber can be sent therefrom to the post-treatment chamber, and then the post-treated wafers can be removed to the vacuum antechamber again, and then removed therefrom to the atmosphere.

摘要翻译： 本发明涉及一种用于蚀刻形成在晶片上的铝布线膜的干蚀刻装置，更具体地说涉及一种能够在其干蚀刻期间去除沉积在晶片表面上的氯化物的干蚀刻装置，以及 作为抗蚀剂膜，而不必将晶片取出。 该干式蚀刻装置设置有蚀刻室，通过闸阀附着到蚀刻室的真空室以及与真空前厅连接的后处理室。 该设备被形成为将去除到真空前厅的蚀刻的晶片从其中被送到后处理室，然后将经后处理的晶片再次移至真空前厅，然后从其中移除到大气中。

公开(公告)号：US4401539A

公开(公告)日：1983-08-30

申请号：US343858

申请日：1982-01-29

申请人： Katsuo Abe ,  Shigeru Kobayashi ,  Tsuneaki Kamei ,  Hideki Tateishi ,  Susumu Aiuchi

发明人： Katsuo Abe ,  Shigeru Kobayashi ,  Tsuneaki Kamei ,  Hideki Tateishi ,  Susumu Aiuchi

IPC分类号： H01J37/34 ,  C23C15/00

CPC分类号： H01J37/3426 ,  H01J37/3408 ,  H01J37/3458 ,  H01J37/347

摘要： A sputtering apparatus of the planar magnetron type is disclosed, in which a low-pressure gas is ionized by glow discharge, ions in the plasma are accelerated by a voltage applied between a cathode and an anode to bombard a target structure, atoms or particles of a target material sputtered from the planar target plate by the bombardment of ions are deposited on a substrate disposed on the anode side, and thus a thin film made of the same material as the target material is formed on the substrate. In view of the facts that lines of magnetic flux generated by a single magnetic flux source does not link each other and the Maxwell stress, the target structure includes the planar target plate and a magnetic flux source having at least three pole pieces in an arrangement that the planar target plate is disposed between the anode and the magnetic flux source, and the amount of magnetic flux starting from a portion of the pole pieces is controlled to control the amount of magnetic flux (or the flux density) existing at the remaining pole pieces and the magnetic flux distribution above the planar target plate, thereby controlling the position of a region where the plasma is formed.

摘要翻译： 公开了一种平面磁控管型的溅射装置，其中通过辉光放电使低压气体离子化，等离子体中的离子被施加在阴极和阳极之间的电压加速，以轰击靶结构，原子或颗粒 通过离子轰击从平面靶板溅射的靶材料沉积在设置在阳极侧的基板上，因此在基板上形成由与靶材料相同的材料制成的薄膜。 鉴于由单个磁通源产生的磁通线不彼此连接和麦克斯韦应力的事实，目标结构包括平面靶板和具有至少三个极片的磁通源，其结构设置为 平面靶板设置在阳极和磁通源之间，并且从极片的一部分开始的磁通量被控制以控制存在于剩余极片的磁通量（或磁通密度） 以及平面靶板上方的磁通分布，从而控制形成等离子体的区域的位置。

公开(公告)号：US06552771B1

公开(公告)日：2003-04-22

申请号：US09461730

申请日：1999-12-16

申请人： Takashi Inoue ,  Shigenobu Maruyama ,  Toshio Asano ,  Susumu Aiuchi ,  Takeo Sawaguchi ,  Rokuro Watanabe

发明人： Takashi Inoue ,  Shigenobu Maruyama ,  Toshio Asano ,  Susumu Aiuchi ,  Takeo Sawaguchi ,  Rokuro Watanabe

IPC分类号： G02F11336

CPC分类号： G02F1/1333 ,  G02F1/1309

摘要： An image display device for repairing a scratch or scratches on a surface or surfaces of a light transmitting member having an image display section such an extent that the presence of the scratch or scratches cannot be visually perceived at at least in a bright view distance in all directions, and in which device a liquid filler having a refractive index equivalent to or on the same order of that of the light transmitting member is locally filled only into an area of the scratch or scratches, and the filler is cured. By controlling an amount of the filler so that a difference in level between a surface of the light transmitting member and a surface of the filler is at least ±5.0 &mgr;m or less and that an angle defined between a surface of the filler and a surface of the light transmitting member is at least 45 degrees or less or preferably at least 10 degrees or less, it is possible to exhibit display quality to such a degree that the presence of the scratch or scratches cannot be recognized.

摘要翻译： 一种图像显示装置，用于修复具有图像显示部分的光透射部件的表面或划痕上的划痕或划痕，其程度使得在至少所有的亮视距离中不能视觉地感觉划痕或划痕的存在 方向，并且在该装置中，具有与透光构件的折射率相同或相同的折射率的液体填充剂局部地填充到划痕或划痕的区域中，并且填料被固化。 通过控制填充剂的量使得透光构件的表面与填料的表面之间的水平差异至少为±5.0μm或更小，并且在填料的表面和表面之间限定的角度 透光构件为至少45度以下，优选为10度以下，可以显示出不能识别出划痕或划痕的程度的显示质量。

公开(公告)号：US4744660A

公开(公告)日：1988-05-17

申请号：US850683

申请日：1986-04-11

申请人： Minori Noguchi ,  Toru Otsubo ,  Susumu Aiuchi

发明人： Minori Noguchi ,  Toru Otsubo ,  Susumu Aiuchi

IPC分类号： G01B11/22 ,  G01B9/02

CPC分类号： G01B11/22

摘要： An apparatus for measuring a difference in level in a sample comprises a light source section which provides illumination light of a variable-wavelength. The illumination light is irradiated onto the sample. A group of filters is provided for shielding diffraction light rays of O-order or other than O-order of the light reflected from the sample. The intensity of interference light of the light rays not shielded by the filter group is detected by a light detector which in turn converts it into an electric signal. An arithmetic operation unit receives the electric signal while the wavelength of the illumination light from the light source section is continuously varied. In the arithmetic unit, wavelengths at which the electric signal or detected light intensity takes extreme values are determined, and the level difference in the sample is determined on the basis of those wavelengths.

摘要翻译： 用于测量样品中的电平差的装置包括提供可变波长的照明光的光源部分。 将照明光照射到样品上。 提供了一组滤光器，用于屏蔽从样品反射的光的O级或O级的衍射光线。 不被滤光器组屏蔽的光线的干涉光的强度由光检测器检测，光检测器又将其转换为电信号。 算术运算单元接收电信号，同时来自光源部分的照明光的波长连续变化。 在算术单元中，确定电信号或检测光强取极值的波长，并根据这些波长确定样本中的电平差。

公开(公告)号：US4721553A

公开(公告)日：1988-01-26

申请号：US769505

申请日：1985-08-23

申请人： Hiroshi Saito ,  Yasumichi Suzuki ,  Shuuzoo Sano ,  Tamotsu Shimizu ,  Susumu Aiuchi

发明人： Hiroshi Saito ,  Yasumichi Suzuki ,  Shuuzoo Sano ,  Tamotsu Shimizu ,  Susumu Aiuchi

IPC分类号： H01L21/203 ,  C23C14/35 ,  H01J37/34 ,  C23C14/34

CPC分类号： C23C14/357 ,  H01J37/3405

摘要： Disclosed herein are apparatuses of several types for forming a film at an increased rate that is necessary for putting the microwave assisting sputtering into practice on an industrial scale. The feature resides in that a plasma is maintained uniformly on the whole surface of target composed of a material to be sputtered. This makes it possible to avoid the target from being thermally destroyed by the increased energy of sputtering. Further, in order to prevent damage on a substrate on which the film is to be sputtered by plasma for sputtering, consideration is given to the arrangement of magnetic devices in order to form the film by positively introducing the plasma onto the substrate on which the film is to be formed and, at the same time, effecting the sputtering. There are further disclosed an apparatus in which the plasma is generated by microwaves at a position close to the target to effectively utilize the energy of microwaves for the sputtering, and a cathode structure on which a conical target is placed by taking into consideration the fact that the sputtered particles emitted from the target travel in compliance with the cosine law.

摘要翻译： 本文公开了用于以工业规模将微波辅助溅射实际需要的以增加的速率形成膜的几种类型的装置。 特征在于，等离子体被均匀地保持在由要溅射的材料组成的靶的整个表面上。 这使得可以避免由于溅射的能量的增加而使靶被热破坏。 此外，为了防止溅射等离子体溅射膜的基板上的损伤，考虑到磁性器件的布置，以便通过将等离子体正向地引入到基板上形成膜，其中膜 并且同时进行溅射。 还公开了一种装置，其中等离子体是通过微波在靠近目标的位置产生的，以有效地利用微波的能量进行溅射，而阴极结构通过考虑以下事实放置圆锥形目标： 从目标行程发射的溅射颗粒符合余弦定律。

公开(公告)号：US4615620A

公开(公告)日：1986-10-07

申请号：US685550

申请日：1984-12-24

申请人： Minori Noguchi ,  Toru Otsubo ,  Susumu Aiuchi

发明人： Minori Noguchi ,  Toru Otsubo ,  Susumu Aiuchi

IPC分类号： G01B11/22

CPC分类号： G01B11/22

摘要： An apparatus for measuring in a non-contact manner the depth of pits and grooves formed by etching in periodic patterns on the surface of a substrate. The measurement is based on the detection of the intensity of a diffraction ray excluding that of the 0th order through the irradiation of a light beam with variable wave length to the sample. Whereas, the conventional measuring system is sensitive to a diffraction ray of the 0th order, i.e., the major component of the reflected light, that hampers the detection of a higher order diffraction ray carrying information of the depth.

摘要翻译： 一种用于以非接触方式测量在衬底的表面上以周期性图案蚀刻形成的凹坑和凹槽的深度的装置。 该测量基于通过对样品照射具有可变波长的光束而不考虑第0级的衍射强度的检测。 而传统的测量系统对第0级的衍射光线（即反射光的主要分量）敏感，这阻碍了检测到承载深度信息的较高阶衍射光线。

公开(公告)号：US4610770A

公开(公告)日：1986-09-09

申请号：US686005

申请日：1984-12-24

申请人： Hiroshi Saito ,  Hideki Tateishi ,  Shigeru Kobayashi ,  Susumu Aiuchi ,  Yasumichi Suzuki ,  Masao Sakata ,  Hideaki Shimamura ,  Tsuneaki Kamei

发明人： Hiroshi Saito ,  Hideki Tateishi ,  Shigeru Kobayashi ,  Susumu Aiuchi ,  Yasumichi Suzuki ,  Masao Sakata ,  Hideaki Shimamura ,  Tsuneaki Kamei

IPC分类号： C23C14/36 ,  C23C14/34 ,  C23C14/35 ,  C23C14/46 ,  H01J37/34 ,  H01L21/203 ,  H01L21/31

CPC分类号： H01J37/32192 ,  C23C14/34 ,  C23C14/46 ,  H01J37/3266 ,  H01J37/34

摘要： A pair of magnets for producing a mirror magnetic field are disposed outside of an electrode structure carrying a target. Microwaves from a microwave source are introduced toward and into a space defined by the mirror magnetic field for generating high-density plasma. While maintaining this high-density plasma over a wide area of the surface of the target, an electric field substantially perpendicular to the surface of the target is applied for sputtering of the target material. The optimized conditions for plasma generation can be selected when the high-density plasma formed outside of a processing chamber is guided to migrate toward an area above the target in the processing chamber. Capability of sputtering of the material from the entire surface of the target increases the rate of film deposition on a substrate and improves the target utilization rate (the quantity of the material deposited on the substrate/the usable area of the target).

摘要翻译： 用于产生镜面磁场的一对磁体设置在承载目标的电极结构的外侧。 来自微波源的微波被引入并由用于产生高密度等离子体的反射镜磁场限定的空间中。 当在靶的表面的较宽区域上保持这种高密度等离子体时，施加基本上垂直于靶的表面的电场，以溅射目标材料。 当在处理室外部形成的高密度等离子体被引导以朝向处理室内的目标区域迁移时，可以选择等离子体产生的优化条件。 从靶的整个表面溅射材料的能力增加了基板上的膜沉积速率，并提高了目标利用率（沉积在基板上的材料的量/目标的可用面积）。

公开(公告)号：US4479848A

公开(公告)日：1984-10-30

申请号：US579941

申请日：1984-02-14

申请人： Toru Otsubo ,  Susumu Aiuchi ,  Takashi Kamimura

发明人： Toru Otsubo ,  Susumu Aiuchi ,  Takashi Kamimura

IPC分类号： C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C23F1/02

CPC分类号： H01J37/32935 ,  H01L21/302

摘要： The present invention consists in an etching method and apparatus wherein an optical image which is reflected from a region of a dicing stripe pattern on a substrate to-be-etched, such as a semiconductor wafer, is focused by a projecting optical system during selective etching. The focused pattern is converted into an image signal by an image detector, and a change of contrast in the region of the dicing stripe pattern is determined from the image signal. Based on this, an ending time for the etching can be decided from the change of contrast.

摘要翻译： 本发明是一种蚀刻方法和装置，其中在选择性刻蚀中通过投影光学系统聚焦由半导体晶片等待刻蚀的基板上的切割条纹图案的区域反射的光学图像 。 通过图像检测器将聚焦图案转换为图像信号，并根据图像信号确定切割条纹图案区域中的对比度变化。 基于此，可以根据对比度的变化来确定蚀刻的结束时间。

公开(公告)号：US06539959B1

公开(公告)日：2003-04-01

申请号：US09498355

申请日：2000-02-04

申请人： Noriyuki Ohroku ,  Yuichirou Tanaka ,  Yoichi Takahara ,  Tomonori Saeki ,  Susumu Aiuchi ,  Hitoshi Oka ,  Fumio Morita ,  Masataka Fujiki ,  Akinobu Yamaoka

发明人： Noriyuki Ohroku ,  Yuichirou Tanaka ,  Yoichi Takahara ,  Tomonori Saeki ,  Susumu Aiuchi ,  Hitoshi Oka ,  Fumio Morita ,  Masataka Fujiki ,  Akinobu Yamaoka

IPC分类号： B08B310

CPC分类号： H01L21/67051 ,  B08B3/04 ,  B08B3/10 ,  G11B23/505 ,  Y10S134/902

摘要： At a time of cleaning a plate-like part such as a wafer or the like while rotating, for the purpose of reducing a contamination, a damage and an unevenness of process of the plate-like part which are caused by an amount of charged electricity of the plate-like part, chuck pins (chuck members) 201 which chuck the plate-like part 1 such as the wafer or the like and upper and lower cleaning plates 101 and 121 which oppose to the plate-like part 1 are constituted by a resin material containing carbon powders, and a desired potential difference is applied to a portion between the plate-like part and the cleaning plates by a voltage control unit 601 which is provided in an outer portion.

摘要翻译： 在旋转时清洁诸如晶片等的板状部件的时候，为了减少由电荷量引起的污染，板状部件的过程的损坏和不均匀性 板状部分夹住板状部分等板状部分1的卡盘销（卡盘部件）201和与板状部分1相对的上下清扫板101和121构成为： 含有碳粉末的树脂材料，并且通过设置在外部的电压控制单元601将期望的电位差施加到板状部分和清洁板之间的部分。

公开(公告)号：USRE33424E

公开(公告)日：1990-11-06

申请号：US254964

申请日：1988-10-07

申请人： Minori Noguchi ,  Toru Otsubo ,  Susumu Aiuchi

发明人： Minori Noguchi ,  Toru Otsubo ,  Susumu Aiuchi

IPC分类号： G01B11/22

CPC分类号： G01B11/22

摘要： An apparatus .Iadd.and method .Iaddend.for measuring in a non-contact manner the depth of pits and grooves formed by etching in periodic patterns on the surface of a substrate. The measurement is based on the detection of the intensity of a diffraction ray excluding that of the 0th order through the irradiation of a light beam with variable wave length to the sample. Whereas, the conventional measuring system is sensitive to a diffraction ray of the 0th order, i.e., the major component of the reflected light, that hampers the detection of a higher order diffraction ray carrying information of the depth.