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    Photoelectric conversion device, manufacturing method thereof and semiconductor device
    11.
    发明授权
    Photoelectric conversion device, manufacturing method thereof and semiconductor device 有权
    光电转换装置及其制造方法以及半导体装置

    公开(公告)号：US08138004B2

    公开(公告)日：2012-03-20

    申请号：US12821201

    申请日：2010-06-23

    申请人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

    发明人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

    IPC分类号： H01L21/00

    CPC分类号： H01L31/1055 ,  H01L31/02162 ,  H01L31/022408 ,  H01L31/02325

    摘要： A manufacturing method of a photoelectric conversion device includes the following steps: forming a first electrode over a substrate; and, over the first electrode, forming a photoelectric conversion layer that includes a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode. The manufacturing method further includes the step of removing a part of the second semiconductor layer and a part of the third semiconductor layer in a region of the photoelectric conversion layer so that the third semiconductor layer does not overlap the first electrode.

    摘要翻译： 光电转换装置的制造方法包括以下步骤：在基板上形成第一电极; 并且在所述第一电极上形成光电转换层，所述光电转换层包括具有一个导电性的第一导电层，第二半导体层和具有与所述第一电极上的所述第二半导体层的一个电导率相反的导电性的第三半导体层。 该制造方法还包括在光电转换层的区域中去除第二半导体层的一部分和第三半导体层的一部分的步骤，使得第三半导体层不与第一电极重叠。

    Semiconductor device
    12.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08049157B2

    公开(公告)日：2011-11-01

    申请号：US12949301

    申请日：2010-11-18

    申请人： Kazuo Nishi ,  Tatsuya Arao ,  Atsushi Hirose ,  Yuusuke Sugawara ,  Naoto Kusumoto ,  Daiki Yamada ,  Hidekazu Takahashi

    发明人： Kazuo Nishi ,  Tatsuya Arao ,  Atsushi Hirose ,  Yuusuke Sugawara ,  Naoto Kusumoto ,  Daiki Yamada ,  Hidekazu Takahashi

    IPC分类号： H03F3/08 ,  H03K17/78 ,  H01J40/14 ,  H04N3/14 ,  H01L31/062

    CPC分类号： H01L31/102 ,  G01J1/44 ,  H01L31/145 ,  H04N5/2351

    摘要： The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.

    摘要翻译： 本发明提供一种能够检测弱光到强光的光的光电转换装置，涉及具有光电转换层的光电二极管的光电转换装置; 包括晶体管的放大器电路; 以及开关，其中当入射光的强度低于预定强度时，光电二极管和放大器电路通过开关彼此电连接，使得光电流被放大器电路放大以输出，并且光电二极管和部分 或者所有的放大器电路都被开关电断开，使得放大系数中的光电流减小以被输出。 根据这样的光电转换装置，能够检测弱光到强光的光。

    PHOTOELECTRIC CONVERSION DEVICE, MANUFACTURING METHOD THEREOF AND SEMICONDUCTOR DEVICE
    13.
    发明申请
    PHOTOELECTRIC CONVERSION DEVICE, MANUFACTURING METHOD THEREOF AND SEMICONDUCTOR DEVICE 有权
    光电转换装置及其半导体装置的制造方法

    公开(公告)号：US20100330729A1

    公开(公告)日：2010-12-30

    申请号：US12821201

    申请日：2010-06-23

    申请人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

    发明人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

    IPC分类号： H01L31/18 ,  H01L31/0232

    CPC分类号： H01L31/1055 ,  H01L31/02162 ,  H01L31/022408 ,  H01L31/02325

    摘要： The present invention provides a photoelectric conversion device in which a leakage current is suppressed. A photoelectric conversion device of the present invention comprises: a first electrode over a substrate; a photoelectric conversion layer including a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode, wherein an end portion of the first electrode is covered with the first semiconductor layer; an insulating film, and a second electrode electrically connected to the third semiconductor film with the insulating film therebetween, over the insulating film, are formed over the third semiconductor film, and wherein a part of the second semiconductor layer and a part of the third semiconductor layer is removed in a region of the photoelectric conversion layer, which is not covered with the insulating film.

    摘要翻译： 本发明提供抑制漏电流的光电转换装置。 本发明的光电转换装置包括：基板上的第一电极; 光电转换层，包括具有一个导电性的第一导电层，第二半导体层和具有与第一电极上的第二半导体层的一个导电率相反的导电性的第三半导体层，其中第一电极的端部为 覆盖第一半导体层; 在所述第三半导体膜上形成绝缘膜和在所述绝缘膜上与所述第三半导体膜电绝缘膜电连接的第二电极，并且其中所述第二半导体层的一部分和所述第三半导体的一部分 在光电转换层的未被绝缘膜覆盖的区域中去除层。

    SEMICONDUCTOR DEVICE
    14.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20090121119A1

    公开(公告)日：2009-05-14

    申请号：US12350271

    申请日：2009-01-08

    申请人： Kazuo Nishi ,  Tatsuya Arao ,  Atsushi Hirose ,  Yuusuke Sugawara ,  Naoto Kusumoto ,  Daiki Yamada ,  Hidekazu Takahashi

    发明人： Kazuo Nishi ,  Tatsuya Arao ,  Atsushi Hirose ,  Yuusuke Sugawara ,  Naoto Kusumoto ,  Daiki Yamada ,  Hidekazu Takahashi

    IPC分类号： H03F3/08

    CPC分类号： H01L31/102 ,  G01J1/44 ,  H01L31/145 ,  H04N5/2351

    摘要： The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.

    摘要翻译： 本发明提供一种能够检测弱光到强光的光的光电转换装置，涉及具有光电转换层的光电二极管的光电转换装置; 包括晶体管的放大器电路; 以及开关，其中当入射光的强度低于预定强度时，光电二极管和放大器电路通过开关彼此电连接，使得光电流被放大器电路放大以输出，并且光电二极管和部分 或者所有的放大器电路都被开关电断开，使得放大系数中的光电流减小以被输出。 根据这样的光电转换装置，能够检测弱光到强光的光。

    Semiconductor device
    15.
    发明申请
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US20070045672A1

    公开(公告)日：2007-03-01

    申请号：US11491507

    申请日：2006-07-24

    申请人： Kazuo Nishi ,  Tatsuya Arao ,  Atsushi Hirose ,  Yuusuke Sugawara ,  Naoto Kusumoto ,  Daiki Yamada ,  Hidekazu Takahashi

    发明人： Kazuo Nishi ,  Tatsuya Arao ,  Atsushi Hirose ,  Yuusuke Sugawara ,  Naoto Kusumoto ,  Daiki Yamada ,  Hidekazu Takahashi

    IPC分类号： H01L29/80

    CPC分类号： H01L31/102 ,  G01J1/44 ,  H01L31/145 ,  H04N5/2351

    摘要： The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.

    摘要翻译： 本发明提供一种能够检测弱光到强光的光的光电转换装置，涉及具有光电转换层的光电二极管的光电转换装置; 包括晶体管的放大器电路; 以及开关，其中当入射光的强度低于预定强度时，光电二极管和放大器电路通过开关彼此电连接，使得光电流被放大器电路放大以输出，并且光电二极管和部分 或者所有的放大器电路都被开关电断开，使得放大系数中的光电流减小以被输出。 根据这样的光电转换装置，能够检测弱光到强光的光。

    Semiconductor device and method of manufacturing the same
    19.
    发明申请
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US20070187790A1

    公开(公告)日：2007-08-16

    申请号：US11226472

    申请日：2005-09-15

    申请人： Hidekazu Takahashi ,  Junya Maruyama ,  Daiki Yamada ,  Naoto Kusumoto ,  Kazuo Nishi ,  Hiroki Adachi ,  Yuusuke Sugawara

    发明人： Hidekazu Takahashi ,  Junya Maruyama ,  Daiki Yamada ,  Naoto Kusumoto ,  Kazuo Nishi ,  Hiroki Adachi ,  Yuusuke Sugawara

    IPC分类号： H01L31/0203

    CPC分类号： H01L27/1214 ,  H01L27/14609 ,  H01L27/14645 ,  H01L27/14692

    摘要： [Abstract]Considering further promotion of high output and miniaturization of a sensor element, it is an object of the present invention to form a plurality of elements in a limited area so that an area occupied by the element is reduced for integration. It is another object to provide a process which improves the yield of a sensor element. According to the present invention, a sensor element using an amorphous silicon film and an output amplifier circuit constituted by a thin film transistor are formed over a substrate having an insulating surface. In addition, a metal layer for protecting an exposed wire when a photoelectric conversion layer of the sensor element is patterned is provided between the photoelectric conversion layer and the wire connected to the thin film transistor.

    摘要翻译： [摘要]考虑到进一步促进传感器元件的高输出和小型化，本发明的目的是在有限的区域中形成多个元件，使得元件占据的面积减小以便集成。 另一个目的是提供一种提高传感器元件的产量的方法。 根据本发明，在具有绝缘表面的基板上形成使用非晶硅膜的传感器元件和由薄膜晶体管构成的输出放大电路。 此外，在光电转换层与连接到薄膜晶体管的导线之间设置用于在传感器元件的光电转换层被图案化时用于保护裸线的金属层。

    Semiconductor device and method of manufacturing the same
    20.
    发明授权
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US07888714B2

    公开(公告)日：2011-02-15

    申请号：US11226472

    申请日：2005-09-15

    申请人： Hidekazu Takahashi ,  Junya Maruyama ,  Daiki Yamada ,  Naoto Kusumoto ,  Kazuo Nishi ,  Hiroki Adachi ,  Yuusuke Sugawara

    发明人： Hidekazu Takahashi ,  Junya Maruyama ,  Daiki Yamada ,  Naoto Kusumoto ,  Kazuo Nishi ,  Hiroki Adachi ,  Yuusuke Sugawara

    IPC分类号： H01L31/062

    CPC分类号： H01L27/1214 ,  H01L27/14609 ,  H01L27/14645 ,  H01L27/14692

    摘要： Considering further promotion of high output and miniaturization of a sensor element, it is an object of the present invention to form a plurality of elements in a limited area so that an area occupied by the element is reduced for integration. It is another object to provide a process which improves the yield of a sensor element. According to the present invention, a sensor element using an amorphous silicon film and an output amplifier circuit constituted by a thin film transistor are formed over a substrate having an insulating surface. In addition, a metal layer for protecting an exposed wire when a photoelectric conversion layer of the sensor element is patterned is provided between the photoelectric conversion layer and the wire connected to the thin film transistor.

    摘要翻译： 考虑到传感器元件的高输出和小型化的进一步促进，本发明的目的是在有限的区域中形成多个元件，使得元件占据的面积减小以便集成。 另一个目的是提供一种提高传感器元件的产量的方法。 根据本发明，在具有绝缘表面的基板上形成使用非晶硅膜的传感器元件和由薄膜晶体管构成的输出放大电路。 此外，在光电转换层与连接到薄膜晶体管的导线之间设置用于在传感器元件的光电转换层被图案化时用于保护裸线的金属层。