公开(公告)号：US08665411B2

公开(公告)日：2014-03-04

申请号：US13484800

申请日：2012-05-31

申请人： Hongyong Zhang

发明人： Hongyong Zhang

IPC分类号： G02F1/1339 ,  G02F1/1345

CPC分类号： G02F1/136286 ,  G02F1/1339 ,  G02F1/13454

摘要： Techniques are provided for unifying steps of sealing material so that the yield and the reliability of a liquid-crystal display device become high. A starting film of scanning lines is patterned so that prismatic dummy wirings 301 for the first layer which are not electrically connected are formed in regions R1 and R2, and wirings 302 extending from the pixel section are formed in a region R3, and wirings 303 having connection end portions 303a are formed in a region R4. After an interlayer insulation film is formed, the starting film of the signal lines is patterned so that the dummy wirings 304 for the second layer are formed to embed the gaps between the wirings 301 to 303, and also the wirings 305 and the wirings 303 which extend from the pixel portion are connected to each other. This permits unification of the cross-sectional structure of the sealing material formation region.

摘要翻译： 提供了用于统一密封材料的步骤的技术，使得液晶显示装置的成品率和可靠性变高。 扫描线的起始膜被图案化，使得在区域R1和R2中形成不电连接的第一层的棱形虚拟布线301，并且从像素部分延伸的布线302形成在区域R3中，并且布线303具有 连接端部303a形成在区域R4中。 在形成层间绝缘膜之后，将信号线的起始膜图案化，以形成用于第二层的虚拟布线304，以将布线301至303之间的间隙，以及布线305和布线303 从像素部分延伸的相互连接。 这允许密封材料形成区域的横截面结构的统一。

公开(公告)号：US08154136B2

公开(公告)日：2012-04-10

申请号：US12883526

申请日：2010-09-16

申请人： Hongyong Zhang

发明人： Hongyong Zhang

IPC分类号： H01L23/48

摘要： Method of fabricating thin-film transistors in which contact with connecting electrodes becomes reliable. When contact holes are formed, the bottom insulating layer is subjected to a wet etching process, thus producing undercuttings inside the contact holes. In order to remove the undercuttings, a light etching process is carried out to widen the contact holes. Thus, tapering section are obtained, and the covering of connection wiring is improved.

公开(公告)号：US07998844B2

公开(公告)日：2011-08-16

申请号：US12219026

申请日：2008-07-15

申请人： Hisashi Ohtani ,  Akiharu Miyanaga ,  Takeshi Fukunaga ,  Hongyong Zhang

发明人： Hisashi Ohtani ,  Akiharu Miyanaga ,  Takeshi Fukunaga ,  Hongyong Zhang

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/22 ,  H01L21/38 ,  H01L21/31 ,  H01L21/469 ,  H01L21/00

CPC分类号： H01L21/02672 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/2022 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/045 ,  H01L29/66757 ,  H01L29/66772 ,  H01L29/78654 ,  H01L29/78675 ,  H01L29/78678 ,  Y10S148/016

摘要： A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.

摘要翻译： 一种用于制造高度稳定和可靠的半导体的方法，包括：用含有能够加速非晶硅膜结晶的催化剂元素的溶液涂覆非晶硅膜的表面，然后对非晶硅膜进行热处理，使其结晶 电影。

公开(公告)号：US07985635B2

公开(公告)日：2011-07-26

申请号：US11321641

申请日：2005-12-30

申请人： Shunpei Yamazaki ,  Hongyong Zhang ,  Hiroaki Ishihara

发明人： Shunpei Yamazaki ,  Hongyong Zhang ,  Hiroaki Ishihara

IPC分类号： H01L21/00

CPC分类号： G02B27/09 ,  C23C14/58 ,  C23C14/5813 ,  C23C16/56 ,  G02B27/0966 ,  H01L21/2022 ,  H01L21/2026 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/84 ,  H01L27/1285

摘要： A laser annealing process for recovering crystallinity of a deposited semiconductor film such as of silicon which had undergone morphological damage, said process comprising activating the semiconductor by irradiating a pulsed laser beam operating at a wavelength of 400 nm or less and at a pulse width of 50 nsec or less onto the surface of the film, wherein, said deposited film is coated with a transparent film such as a silicon oxide film at a thickness of from 3 to 300 nm, and the laser beam incident to said coating is applied at an energy density E (mJ/cm2) provided that it satisfies the relation: log10 N≦−0.02(E−350), where N is the number of shots of the pulsed laser beam.

摘要翻译： 一种激光退火工艺，用于回收沉积的半导体膜（例如已经形成损伤的硅）的半导体膜的结晶度，所述方法包括通过照射在400nm或更小的波长下以脉冲宽度为50的脉冲激光束来激活半导体 nsec以下，其中，所述沉积膜涂覆有厚度为3至300nm的诸如氧化硅膜的透明膜，并且入射到所述涂层的激光束以能量施加 密度E（mJ / cm2），条件是其满足关系：log10 N＆nlE; -0.02（E-350），其中N是脉冲激光束的镜头数。

公开(公告)号：US20110100688A1

公开(公告)日：2011-05-05

申请号：US12986281

申请日：2011-01-07

申请人： Hongyong Zhang ,  Yoshiharu Hirakata ,  Kenji Otsuka ,  Shunpei Yamazaki ,  Hideaki Kuwabara

发明人： Hongyong Zhang ,  Yoshiharu Hirakata ,  Kenji Otsuka ,  Shunpei Yamazaki ,  Hideaki Kuwabara

IPC分类号： H05K1/09 ,  H05K1/02 ,  G03F7/20

CPC分类号： G02F1/134363 ,  G02F1/136286 ,  G02F2001/136295

摘要： In a liquid crystal display device, gate lines and common lines are first concurrently formed, and after an interlayer film is formed, a pixel electrode, common electrodes, and source lines are formed at the same time. By this, a electrode pattern can be made simple and manufacturing steps are simplified. Further, wiring lines and electrode disposed in the layer closest to a liquid crystal layer are made the pixel electrode, common electrodes and source lines, and the shapes thereof are made simple.

摘要翻译： 在液晶显示装置中，首先同时形成栅极线和公共线，并且在形成层间膜之后，同时形成像素电极，公共电极和源极线。 由此，可以使电极图案简单，并且简化制造步骤。 此外，布置在最靠近液晶层的层中的布线和电极被制成像素电极，公共电极和源极线，并且其形状变得简单。

公开(公告)号：US07838968B2

公开(公告)日：2010-11-23

申请号：US11293111

申请日：2005-12-05

申请人： Hongyong Zhang ,  Satoshi Teramoto

发明人： Hongyong Zhang ,  Satoshi Teramoto

IPC分类号： H01L23/58 ,  H01L27/01 ,  H01L29/04

CPC分类号： H01L21/31111 ,  G02F1/136227 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/76801 ,  H01L21/76802 ,  H01L27/12 ,  H01L27/1248

摘要： There are disclosed TFTs having improved reliability. An interlayer dielectric film forming the TFTs is made of a silicon nitride film. Other interlayer dielectric films are also made of silicon nitride. The stresses inside the silicon nitride films forming these interlayer dielectric films are set between −5×109 and 5×109 dyn/cm2. This can suppress peeling of the interlayer dielectric films and difficulties in forming contact holes. Furthermore, release of hydrogen from the active layer can be suppressed. In this way, highly reliable TFTs can be obtained.

摘要翻译： 公开了具有提高的可靠性的TFT。 形成TFT的层间电介质膜由氮化硅膜构成。 其它层间绝缘膜也由氮化硅制成。 形成这些层间电介质膜的氮化硅膜内的应力设定在-5×109〜5×10 9 dyn / cm 2之间。 这可以抑制层间绝缘膜的剥离和形成接触孔的困难。 此外，可以抑制从活性层释放氢。 以这种方式，可以获得高度可靠的TFT。

公开(公告)号：US07821011B2

公开(公告)日：2010-10-26

申请号：US12277547

申请日：2008-11-25

申请人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Hongyong Zhang

发明人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Hongyong Zhang

IPC分类号： H01L33/00

CPC分类号： H01L27/127 ,  G02F1/13454 ,  G02F2001/136245 ,  H01L21/76897 ,  H01L27/1214 ,  H01L29/04 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78651 ,  H01L29/78666 ,  H01L29/78675

摘要： An LDD structure is manufactured to have a desired aspect ratio of the height to the width of a gate electrode. The gate electrode is first deposited on a semiconductor substrate followed by ion implantation with the gate electrode as a mask to form a pair of impurity regions. The gate electrode is then anodic oxidized to form an oxide film enclosing the electrode. With the oxide film as a mask, highly doped regions are formed by ion implantation in order to define lightly doped regions between the highly doped regions and the channel region located therebetween.

摘要翻译： 制造LDD结构以具有期望的高度与栅电极的宽度的纵横比。 首先将栅电极沉积在半导体衬底上，随后以栅电极作为掩模进行离子注入，以形成一对杂质区。 然后对栅电极进行阳极氧化，形成包围电极的氧化膜。 以氧化物膜为掩模，通过离子注入形成高度掺杂的区域，以便在高掺杂区域和位于它们之间的沟道区域之间限定轻掺杂区域。

公开(公告)号：US07667817B2

公开(公告)日：2010-02-23

申请号：US11782042

申请日：2007-07-24

申请人： Hongyong Zhang ,  Satoshi Teramoto

发明人： Hongyong Zhang ,  Satoshi Teramoto

IPC分类号： G02F1/1339 ,  G02F1/1345

CPC分类号： G02F1/13392 ,  G02F1/1334 ,  G02F1/1339 ,  G02F1/1341 ,  G02F1/13454 ,  G02F2001/133388 ,  G09G3/3648

摘要： A laminated spacer portion formed by laminating various thin films that constitute thin-film transistors is disposed in peripheral driver circuits. As a result, even in a structure in which part of a sealing member is disposed above the peripheral driver circuits, pressure exerted from spacers in the sealing member is concentrated on the laminated spacer portion, whereby destruction of a thin-film transistor of the peripheral driver circuits can be prevented caused by the pressure from the sealing portion.

摘要翻译： 通过层叠各种构成薄膜晶体管的薄膜形成的层叠间隔部分设置在外围驱动电路中。 结果，即使在密封构件的一部分设置在外围驱动电路的上方的结构中，由密封构件中的间隔物施加的压力集中在层叠间隔部分上，从而破坏周边的薄膜晶体管 可以防止来自密封部的压力引起的驱动电路。

公开(公告)号：US07646022B2

公开(公告)日：2010-01-12

申请号：US11382412

申请日：2006-05-09

申请人： Hongyong Zhang ,  Satoshi Teramoto

发明人： Hongyong Zhang ,  Satoshi Teramoto

IPC分类号： H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036

CPC分类号： G02F1/136227 ,  G02F1/136209 ,  G02F1/136213

摘要： The present invention provides an active matrix type display device having a high aperture ratio and a required auxiliary capacitor. A source line and a gate line are overlapped with part of a pixel electrode. This overlapped region functions to be a black matrix. Further, an electrode pattern made of the same material as the pixel electrode is disposed to form the auxiliary capacitor by utilizing the pixel electrode. It allows a required value of auxiliary capacitor to be obtained without dropping the aperture ratio. Also, it allows the electrode pattern to function as a electrically shielding film for suppressing the cross-talk between the source and gate lines and the pixel electrode.

摘要翻译： 本发明提供一种具有高开口率的有源矩阵型显示装置和所需的辅助电容器。 源极线和栅极线与像素电极的一部分重叠。 该重叠区域用作黑矩阵。 此外，通过利用像素电极设置由与像素电极相同材料制成的电极图案以形成辅助电容器。 允许在不降低开口率的情况下获得所需的辅助电容值。 此外，它允许电极图案用作用于抑制源极和栅极线和像素电极之间的串扰的电屏蔽膜。

公开(公告)号：US07635895B2

公开(公告)日：2009-12-22

申请号：US11647179

申请日：2006-12-29

申请人： Hongyong Zhang ,  Yasuhiko Takemura ,  Toshimitsu Konuma ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi

发明人： Hongyong Zhang ,  Yasuhiko Takemura ,  Toshimitsu Konuma ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi

IPC分类号： H01L27/12

CPC分类号： H01L27/127 ,  H01L27/1214 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627

摘要： There is provided a method by which lightly doped drain (LDD) regions can be formed easily and at good yields in source/drain regions in thin film transistors possessing gate electrodes covered with an oxide covering. A lightly doped drain (LDD) region is formed by introducing an impurity into an island-shaped silicon film in a self-aligning manner, with a gate electrode serving as a mask. First, low-concentration impurity regions are formed in the island-shaped silicon film by using rotation-tilt ion implantation to effect ion doping from an oblique direction relative to the substrate. Low-concentration impurity regions are also formed below the gate electrode at this time. After that, an impurity at a high concentration is introduced normally to the substrate, so forming high-concentration impurity regions. In the above process, a low-concentration impurity region remains below the gate electrode and constitutes a lightly doped drain region.

摘要翻译： 提供了一种方法，通过该方法可以容易地形成轻掺杂漏极（LDD）区域，并且在具有覆盖有氧化物覆盖层的栅电极的薄膜晶体管中的源/漏区域中以良好的产率形成。 通过以栅极电极作为掩模，以自对准的方式将杂质引入岛状硅膜中形成轻掺杂漏极（LDD）区域。 首先，通过使用旋转 - 倾斜离子注入在岛状硅膜中形成低浓度杂质区，以相对于衬底从倾斜方向进行离子掺杂。 此时也在栅电极下方形成低浓度杂质区。 之后，将高浓度的杂质通常引入衬底，从而形成高浓度杂质区域。 在上述过程中，低浓度杂质区域保留在栅电极下方并构成轻掺杂漏区。