公开(公告)号：US06199567B1

公开(公告)日：2001-03-13

申请号：US08772632

申请日：1996-12-23

申请人： Itaru Kanno ,  Tetsuo Aoyama ,  Mayumi Hada

发明人： Itaru Kanno ,  Tetsuo Aoyama ,  Mayumi Hada

IPC分类号： B08B310

CPC分类号： H01L21/02071 ,  B08B3/12 ,  H01L21/32136 ,  H01L28/55 ,  H01L28/60 ,  H01L28/75 ,  Y10S134/902

摘要： In a method of manufacturing a semiconductor device including a capacitor, a refractory metal layer is dry-etched using a resist pattern as a mask, whereby a first electrode pattern formed of refractory metal is provided. Sidewall of the first electrode pattern is cleaned using aqueous solution of a surface active agent. Through this procedure, etching residue formed on the sidewall of the electrode pattern is removed when the electrode pattern of refractory metal is produced through dry etching method.

摘要翻译： 在制造包括电容器的半导体器件的方法中，使用抗蚀剂图案作为掩模对难熔金属层进行干蚀刻，从而提供由难熔金属形成的第一电极图案。 使用表面活性剂的水溶液清洁第一电极图案的侧壁。 通过这种方法，当通过干蚀刻法制造难熔金属的电极图案时，去除在电极图案的侧壁上形成的蚀刻残留物。

公开(公告)号：US4776929A

公开(公告)日：1988-10-11

申请号：US120150

申请日：1987-11-12

申请人： Tetsuo Aoyama ,  Eiji Shima ,  Jiro Ishikawa ,  Naoto Sakurai

发明人： Tetsuo Aoyama ,  Eiji Shima ,  Jiro Ishikawa ,  Naoto Sakurai

IPC分类号： C25B3/00 ,  C25C1/00

CPC分类号： C25B3/00

摘要： A process for production of high purity quarternary ammonium hydroxides, comprising electrolyzing quarternary ammonium hydrogencarbonates represented by the general formula: ##STR1## (wherein the symbols are as defined in the appended claims) in an electrolytic cell comprising an anode compartment and a cathode compartment defined by a cation exchange membrane. In accordance with this process, high purity quarternary ammonium hydroxides can be produced with high electrolytic efficiency and further without causing corrosion of equipment. Since the quarternary ammonium hydroxides produced by the present invention are of high purity, they can be effectively used as, for example, cleaners, etchants or developers for wafers in the production of IC and LSI in the field of electronics and semiconductors.

摘要翻译： 一种用于生产高纯度季铵氢氧化物的方法，包括电解季节性碳酸氢铵，其由下列通式表示：其中符号如所附权利要求中所定义，其中电解池包括阳极室和阴极隔室 通过阳离子交换膜。 根据该方法，可以以高电解效率生产高纯度季铵氢氧化物，而且不会引起设备腐蚀。 由于本发明生产的季铵氢氧化物具有高纯度，所以它们可以有效地用作例如在电子和半导体领域中用于制造IC和LSI的晶片的清洁剂，蚀刻剂或显影剂。

公开(公告)号：US4163863A

公开(公告)日：1979-08-07

申请号：US877890

申请日：1978-02-15

申请人： Takeo Ikarashi ,  Mikio Goto ,  Kozo Sano ,  Naoto Osaki ,  Tetsuo Aoyama ,  Shigeru Horie

发明人： Takeo Ikarashi ,  Mikio Goto ,  Kozo Sano ,  Naoto Osaki ,  Tetsuo Aoyama ,  Shigeru Horie

IPC分类号： C07C37/08 ,  C07C39/07 ,  C07C39/06

CPC分类号： C07C37/08

摘要： A process for preparing a methylphenol from an alkylbenzene which process comprises oxidizing by molecular oxygen an alkylbenzene having one secondary alkyl group and 1-3 methyl groups of the general formula I ##STR1## where R is a secondary alkyl group and n is an integer of 1-3, acid-decomposing the oxidation product solution in the presence of an acid catalyst, stopping the acid-decomposition reaction before its completion, hydrogenating the acid decomposition product solution in the presence of a hydrogenation catalyst in the presence or absence of a solvent, and recovering the resulting methylphenol of the general formula II ##STR2## where n is an integer of 1-3 from the hydrogenation product solution.

公开(公告)号：US4013725A

公开(公告)日：1977-03-22

申请号：US574898

申请日：1975-05-06

申请人： Eiichi Yonemitsu ,  Takeo Igarashi ,  Naoto Osaki ,  Tetsuo Aoyama ,  Yukiya Nakazato

发明人： Eiichi Yonemitsu ,  Takeo Igarashi ,  Naoto Osaki ,  Tetsuo Aoyama ,  Yukiya Nakazato

IPC分类号： C07C409/08 ,  C07C179/02 ,  C07C179/04

CPC分类号： C07C409/08 ,  C07C407/00

摘要： A process for preparing hydroperoxide by autoxidizing secondary alkyl group-substituted methylbenzenes in the presence of water comprises using as a catalyst a water-soluble chelate compound in which multidentate ligands are coordinated to at least one member selected from the class of cobalt, nickel, manganese, copper and iron.

公开(公告)号：US20050014667A1

公开(公告)日：2005-01-20

申请号：US10826319

申请日：2004-04-19

申请人： Tetsuo Aoyama ,  Toshitaka Hiraga ,  Tomoko Suzuki

发明人： Tetsuo Aoyama ,  Toshitaka Hiraga ,  Tomoko Suzuki

IPC分类号： C11D7/08 ,  C11D7/10 ,  C11D7/26 ,  C11D7/28 ,  C11D7/32 ,  C11D7/50 ,  C11D11/00 ,  G03F7/42 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311 ,  H01L21/768 ,  C11D1/00

CPC分类号： H01L21/02063 ,  C11D7/08 ,  C11D7/10 ,  C11D7/263 ,  C11D7/28 ,  C11D7/3218 ,  C11D7/3263 ,  C11D7/5013 ,  C11D11/0047 ,  G03F7/423 ,  G03F7/425 ,  H01L21/31116 ,  H01L21/31133 ,  H01L21/76802 ,  H01L21/76814

摘要： The present invention relates to dilute fluoride solutions and methods for cleaning plasma etch residue from semiconductor substrates including such dilute solutions. The compositions and methods according to the invention can advantageously provide both cleaning efficiency and material compatibility.

摘要翻译： 本发明涉及稀释氟化物溶液以及用于从包括这种稀溶液的半导体衬底清洗等离子体蚀刻残留物的方法。 根据本发明的组合物和方法可以有利地提供清洁效率和材料相容性。

公开(公告)号：US06686322B1

公开(公告)日：2004-02-03

申请号：US09581118

申请日：2000-08-28

申请人： Masahiro Nohara ,  Ryou Hashimoto ,  Taimi Oketani ,  Hisaki Abe ,  Taketo Maruyama ,  Tetsuo Aoyama

发明人： Masahiro Nohara ,  Ryou Hashimoto ,  Taimi Oketani ,  Hisaki Abe ,  Taketo Maruyama ,  Tetsuo Aoyama

IPC分类号： C11D942

CPC分类号： H01L21/02071 ,  C03C23/0075 ,  C11D3/3947 ,  C11D7/08 ,  C11D7/3245 ,  C11D7/36 ,  C11D11/0047 ,  C23G1/24 ,  G02F1/13439 ,  G03F7/423 ,  H01L21/0273 ,  H01L21/31116

摘要： A cleaning agent which comprises 0.1 to 60% by weight of an oxidizing agent and 0.0001 to 5% by weight of a chelating agent. In the process for producing semiconductor integrated circuits, a pattern layer of a photoresist used as an etching mask and residues formed from the photoresist by dry etching can be easily removed with the cleaning agent. In the process for producing substrates for liquid crystal display panels, residues derived from a conductive thin film formed by dry etching can also be easily removed. In the cleaning processes using the cleaning agent, wiring materials or insulating materials in thin film circuit devices or other materials used for producing substrates of semiconductor integrated circuits and liquid crystal panels are not corroded.

摘要翻译： 一种清洁剂，其包含0.1至60重量％的氧化剂和0.0001至5重量％的螯合剂。 在制造半导体集成电路的过程中，可以容易地用清洁剂去除用作蚀刻掩模的光致抗蚀剂的图案层和由干蚀刻形成的残留物。 在液晶显示面板用基板的制造方法中，也可以容易地除去由干蚀刻形成的导电薄膜得到的残留物。 在使用清洁剂的清洁方法中，薄膜电路器件中的配线材料或绝缘材料或用于制造半导体集成电路和液晶面板的基板的其它材料不被腐蚀。

公开(公告)号：US06440326B1

公开(公告)日：2002-08-27

申请号：US09524499

申请日：2000-03-13

申请人： Taketo Maruyama ,  Hisaki Abe ,  Tetsuya Karita ,  Tetsuo Aoyama

发明人： Taketo Maruyama ,  Hisaki Abe ,  Tetsuya Karita ,  Tetsuo Aoyama

IPC分类号： C09K1300

CPC分类号： C23G1/061 ,  G03F7/425 ,  H01L21/31133

摘要： A resist removing composition comprising a quaternary ammonium hydroxide, a water-soluble amine, an alkylpyrrolidone and a sugar or sugar alcohol. The photoresist removing composition can easily remove (i) a photoresist layer applied onto an inorganic substrate, (ii) a remaining photoresist layer after dry etching or (iii) a photoresist residue after ashing, at a low temperature in a short time, and also enables hyperfine processing of a wiring pattern material to manufacture a high precision circuit pattern without corroding the material.

摘要翻译： 一种抗蚀剂去除组合物，其包含季铵氢氧化物，水溶性胺，烷基吡咯烷酮和糖或糖醇。 光致抗蚀剂去除组合物可以容易地除去（i）施加到无机基材上的光致抗蚀剂层，（ii）在干蚀刻之后残留的光致抗蚀剂层，或（iii）灰化后的光致抗蚀剂残留物，在短时间内在低温下，以及 使得布线图案材料的超精细加工能够制造高精度的电路图案而不会腐蚀材料。

公开(公告)号：US5972862A

公开(公告)日：1999-10-26

申请号：US901475

申请日：1997-07-28

申请人： Yoshimi Torii ,  Shunji Sasabe ,  Masayuki Kojima ,  Kazuhisa Usuami ,  Takafumi Tokunaga ,  Kazusato Hara ,  Yoshikazu Ohira ,  Tsuyoshi Matsui ,  Hideto Gotoh ,  Tetsuo Aoyama ,  Ryuji Hasemi ,  Hidetoshi Ikeda ,  Fukusaburo Ishihara ,  Ryuji Sotoaka

发明人： Yoshimi Torii ,  Shunji Sasabe ,  Masayuki Kojima ,  Kazuhisa Usuami ,  Takafumi Tokunaga ,  Kazusato Hara ,  Yoshikazu Ohira ,  Tsuyoshi Matsui ,  Hideto Gotoh ,  Tetsuo Aoyama ,  Ryuji Hasemi ,  Hidetoshi Ikeda ,  Fukusaburo Ishihara ,  Ryuji Sotoaka

IPC分类号： C11D7/60 ,  G03F7/42 ,  H01L21/02 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/3213 ,  C11D1/62 ,  C11D3/44 ,  C11D7/08

CPC分类号： H01L21/02071 ,  G03F7/423 ,  G03F7/425 ,  H01L21/02063 ,  Y10S438/974

摘要： There is disclosed a cleaning liquid for producing a semiconductor device which comprises (A) fluorine-containing compound; (B) water-soluble or water-miscible organic solvent; and (C) inorganic acid and/or organic acid, optionally, further comprises (D) quaternary ammonium salt or (D') a specific organic carboxylic acid ammonium salt and/or an organic carboxylic acid amine salt; as well as a process for producing a semiconductor device by forming a resist pattern on a substrate equipped on the surface with an insulating film layer or a metallic electroconductive layer, forming a via hole or electric wiring by dry etching, removing the resist pattern by ashing treatment with oxygen plasma; and effecting an cleaning treatment with the above cleaning liquid. The above cleaning liquid and production process can readily remove the deposit polymer formed in the case of dry etching without impairing metallic film and insulating film.

摘要翻译： 公开了一种用于制造半导体器件的清洗液，其包含（A）含氟化合物; （B）水溶性或水混溶性有机溶剂; 和（C）无机酸和/或有机酸，任选地还包含（D）季铵盐或（D'）特定的有机羧酸铵盐和/或有机羧酸胺盐; 以及通过在表面上配置有绝缘膜层或金属导电层的基板上形成抗蚀剂图案来制造半导体器件的方法，通过干蚀刻形成通孔或电布线，通过灰化除去抗蚀剂图案 用氧等离子体处理; 并用上述清洗液进行清洗处理。 上述清洗液和制造方法可以容易地除去在干蚀刻的情况下形成的沉积聚合物，而不损害金属膜和绝缘膜。

公开(公告)号：US5962385A

公开(公告)日：1999-10-05

申请号：US133627

申请日：1998-08-13

申请人： Taketo Maruyama ,  Ryuji Hasemi ,  Hidetoshi Ikeda ,  Tetsuo Aoyama

发明人： Taketo Maruyama ,  Ryuji Hasemi ,  Hidetoshi Ikeda ,  Tetsuo Aoyama

IPC分类号： G03F7/42 ,  H01L21/02 ,  H01L21/027 ,  H01L21/304 ,  H01L21/3213 ,  C09K13/00 ,  C11D7/50

CPC分类号： H01L21/02071

摘要： A cleaning liquid for semiconductor devices comprising 1.0 to 5% by weight of a fluorine compound of the formula R.sub.4 NF, wherein R is a hydrogen atom or a C.sub.1 -C.sub.4 alkyl group, 72 to 80% by weight of an organic solvent soluble in water, and the remaining amount being water. The cleaning liquid can rapidly and completely at a low temperature remove resist residues left remaining after dry etching and ashing in the wiring step in the production of semiconductor integrated circuits, and the cleaning liquid does not corrode wiring materials.

摘要翻译： 一种半导体器件用清洗液，其含有1.0〜5重量％的式R4NF的氟化合物，其中R为氢原子或C1-C4烷基，72〜80重量％的可溶于水的有机溶剂， 余量为水。 在半导体集成电路的制造中，清洗液能够在低温下快速且完全地除去在干法蚀刻和布线步骤中残留残留的抗蚀剂残留物，并且清洗液体不会腐蚀布线材料。

公开(公告)号：US5693599A

公开(公告)日：1997-12-02

申请号：US625835

申请日：1996-04-01

申请人： Tetsuo Aoyama ,  Toshio Kondoh ,  Toshihiko Kobayashi ,  Kaoru Tsuyuki

发明人： Tetsuo Aoyama ,  Toshio Kondoh ,  Toshihiko Kobayashi ,  Kaoru Tsuyuki

IPC分类号： C11D7/32 ,  C11D7/50 ,  H05K3/26 ,  C11D1/62

CPC分类号： C11D7/32 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/5013 ,  H05K3/26

摘要： A flux washing agent which comprises an aqueous solution containing a quaternary ammonium salt and hydrazine is disclosed. The flux washing agent is used in the production of printed circuit boards and the like. The flux washing agent has a washing ability, and a property to suppress etching of solder which are comparable with those of Flon 113 and trichloroethylene heretofore used as flux washing agents. Furthermore, the flux washing agent is safe, does not cause environmental pollution and has an excellent rinsing property.

摘要翻译： 公开了包含含有季铵盐和肼的水溶液的助焊剂洗涤剂。 焊剂清洗剂用于生产印刷电路板等。 助焊剂洗涤剂具有洗涤能力和抑制焊料蚀刻的性能，其与以前用作助熔剂洗涤剂的Flon 113和三氯乙烯相当。 此外，助焊剂洗涤剂是安全的，不会引起环境污染并且具有优异的漂洗性能。