公开(公告)号：US06199567B1

公开(公告)日：2001-03-13

申请号：US08772632

申请日：1996-12-23

申请人： Itaru Kanno ,  Tetsuo Aoyama ,  Mayumi Hada

发明人： Itaru Kanno ,  Tetsuo Aoyama ,  Mayumi Hada

IPC分类号： B08B310

CPC分类号： H01L21/02071 ,  B08B3/12 ,  H01L21/32136 ,  H01L28/55 ,  H01L28/60 ,  H01L28/75 ,  Y10S134/902

摘要： In a method of manufacturing a semiconductor device including a capacitor, a refractory metal layer is dry-etched using a resist pattern as a mask, whereby a first electrode pattern formed of refractory metal is provided. Sidewall of the first electrode pattern is cleaned using aqueous solution of a surface active agent. Through this procedure, etching residue formed on the sidewall of the electrode pattern is removed when the electrode pattern of refractory metal is produced through dry etching method.

摘要翻译： 在制造包括电容器的半导体器件的方法中，使用抗蚀剂图案作为掩模对难熔金属层进行干蚀刻，从而提供由难熔金属形成的第一电极图案。 使用表面活性剂的水溶液清洁第一电极图案的侧壁。 通过这种方法，当通过干蚀刻法制造难熔金属的电极图案时，去除在电极图案的侧壁上形成的蚀刻残留物。

公开(公告)号：US07250391B2

公开(公告)日：2007-07-31

申请号：US10617128

申请日：2003-07-11

申请人： Itaru Kanno ,  Yasuhiro Asaoka ,  Masahiko Higashi ,  Yoshiharu Hidaka ,  Etsuro Kishio ,  Tetsuo Aoyama ,  Tomoko Suzuki ,  Toshitaka Hiraga ,  Toshihiko Nagai

发明人： Itaru Kanno ,  Yasuhiro Asaoka ,  Masahiko Higashi ,  Yoshiharu Hidaka ,  Etsuro Kishio ,  Tetsuo Aoyama ,  Tomoko Suzuki ,  Toshitaka Hiraga ,  Toshihiko Nagai

IPC分类号： C11D7/50

CPC分类号： H01L21/02063 ,  G03F7/423 ,  G03F7/425 ,  H01L21/31116 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/76838

摘要： The cleaning composition for removing resists includes a salt of hydrofluoric acid and a base not containing a metal (A component), a water-soluble organic solvent (B1 component), at least one organic acid or inorganic acid (C component), water (D component), and, optionally, an ammonium salt (E1 component), and having a pH 4-8. Thus, in manufacturing a semiconductor device, such as a copper interconnecting process, efficiency of removing resist residue and other etching residue after etching or ashing is improved, and corrosion resistance of a copper and an insulating film is also improved.

摘要翻译： 用于除去抗蚀剂的清洁组合物包括氢氟酸盐和不含金属的基质（A组分），水溶性有机溶剂（B1组分），至少一种有机酸或无机酸（C组分），水（ D成分）和任选的铵盐（E1成分），pH4〜8。 因此，在制造诸如铜互连工艺的半导体器件时，蚀刻或灰化后除去抗蚀剂残留物和其它蚀刻残留物的效率提高，铜和绝缘膜的耐腐蚀性也得到改善。

公开(公告)号：US20110298097A1

公开(公告)日：2011-12-08

申请号：US13156021

申请日：2011-06-08

申请人： Manabu Sueyoshi ,  Seiji Muranaka ,  Tomoryo Shono ,  Itaru Kanno

发明人： Manabu Sueyoshi ,  Seiji Muranaka ,  Tomoryo Shono ,  Itaru Kanno

IPC分类号： H01L29/41 ,  H01L21/283

CPC分类号： H01L25/0657 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/481 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0652 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05009 ,  H01L2224/05017 ,  H01L2224/05554 ,  H01L2224/0557 ,  H01L2224/056 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48229 ,  H01L2224/73204 ,  H01L2224/73215 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2224/83005 ,  H01L2224/9202 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06544 ,  H01L2225/06558 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10162 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00011 ,  H01L2224/05552 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device is provided wherein stacked semiconductor substrates are electrically coupled together in a satisfactory state by a conductor buried in the interior of a through hole. A first semiconductor substrate includes a substrate having main surfaces, further includes a semiconductor element formed within and over the substrate, a wiring coupled to the semiconductor element electrically, and a conductive layer formed in the interior of a through hole, the through hole extending through mutually confronting first and second main surfaces as the main surfaces of the substrate and reaching the wiring. The first semiconductor substrate and a second semiconductor substrate are stacked and the conductive layer is coupled to a wiring of the second semiconductor substrate electrically. In a second main surface of the conductive layer, a recess is formed around an end portion of the through hole so that a bottom wall surface of the recess is present in the interior of the substrate. A conductive material which constitutes the conductive layer is filled in the interior of the recess.

摘要翻译： 提供一种半导体器件，其中堆叠的半导体衬底通过埋在通孔内部的导体在令人满意的状态下电耦合在一起。 第一半导体衬底包括具有主表面的衬底，还包括形成在衬底内和上面的半导体元件，电连接到半导体元件的布线，以及形成在通孔内部的导电层，所述通孔延伸穿过 相互面对的第一和第二主表面作为基板的主表面并到达布线。 层叠第一半导体衬底和第二半导体衬底，并且导电层电连接到第二半导体衬底的布线。 在导电层的第二主表面中，在通孔的端部周围形成凹部，使得凹部的底壁表面存在于基板的内部。 构成导电层的导电材料填充在凹部的内部。

公开(公告)号：US20070099406A1

公开(公告)日：2007-05-03

申请号：US11551861

申请日：2006-10-23

申请人： Masahiko Higashi ,  Satoshi Kume ,  Jiro Yugami ,  Shinichi Yamanari ,  Takahiro Maruyama ,  Itaru Kanno

发明人： Masahiko Higashi ,  Satoshi Kume ,  Jiro Yugami ,  Shinichi Yamanari ,  Takahiro Maruyama ,  Itaru Kanno

IPC分类号： H01L21/3205 ,  H01L21/4763 ,  H01L21/336

CPC分类号： H01L21/32134 ,  H01L21/28079 ,  H01L21/823842 ,  H01L21/82385 ,  H01L29/4958

摘要： In a semiconductor device manufacturing method of the invention, a metal film, for forming a gate electrode, is formed on a gate insulating film. Subsequently, when the metal film is processed, part of the metal film is removed by a wet etching process using a given chemical liquid.

摘要翻译： 在本发明的半导体器件制造方法中，在栅极绝缘膜上形成用于形成栅电极的金属膜。 随后，当处理金属膜时，通过使用给定的化学液体的湿蚀刻工艺去除部分金属膜。

公开(公告)号：US6048409A

公开(公告)日：2000-04-11

申请号：US917103

申请日：1997-08-25

申请人： Itaru Kanno ,  Toshiaki Ohmori ,  Hiroshi Tanaka ,  Nobuaki Doi

发明人： Itaru Kanno ,  Toshiaki Ohmori ,  Hiroshi Tanaka ,  Nobuaki Doi

IPC分类号： B08B5/02 ,  A62C5/00 ,  B01F3/04 ,  B01F5/04 ,  B01F5/06 ,  B05B7/00 ,  B05D1/02 ,  B08B3/02 ,  B08B3/10 ,  B24B53/007 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306

CPC分类号： H01L21/02052 ,  B01F3/04049 ,  B01F5/045 ,  B08B3/02 ,  B08B3/022 ,  B08B3/10 ,  B24B53/007 ,  H01L21/67051 ,  Y10S134/902

摘要： The present invention is directed to providing an apparatus which is improved so as to remove a contamination on a substrate efficiently. This apparatus includes a jet nozzle jetting out droplets toward a substrate. A liquid supply device and a gas supply device are connected to the jet nozzle. A mixing device mixing a liquid and a gas supplied to the jet nozzle and changing the liquid into the droplets is provided in the jet nozzle.

摘要翻译： 本发明旨在提供一种改进的装置，以有效地去除衬底上的污染物。 该装置包括向基板喷射液滴的喷嘴。 液体供应装置和气体供应装置连接到喷嘴。 在喷嘴中设置混合液体和供应到喷嘴的气体并将液体变成液滴的混合装置。

公开(公告)号：US5746233A

公开(公告)日：1998-05-05

申请号：US678685

申请日：1996-07-11

申请人： Takeshi Kuroda ,  Itaru Kanno

发明人： Takeshi Kuroda ,  Itaru Kanno

IPC分类号： H01L21/304 ,  B08B3/04 ,  H01L21/00

CPC分类号： H01L21/67057 ,  B08B3/04 ,  Y10S134/902

摘要： Obtained are a washing apparatus inhibiting a washing liquid from losing its washability and a method therefor. A circulating pump (5) circulates a washing liquid (3) successively through a heater (6), a filter (7), and an overflow washing tank (2). The washing liquid (3) is gradually evaporated. On the other hand, a water supplier (10) supplies the overflow washing tank (2) with water through a tube (8). An amine supplier (11) supplies the overflow washing tank (2) with amines through a tube (9). A control unit (12) controls the quantities of the water and amines as supplied. In a washing part (50), therefore, the quantities of the water and amines are inhibited from being reduced upon a lapse of time from operation starting, whereby the washing liquid (3) is inhibited from losing its washability.

摘要翻译： 获得的是洗涤装置抑制洗涤液失去其可洗性的方法及其方法。 循环泵（5）使洗涤液（3）依次通过加热器（6），过滤器（7）和溢流清洗槽（2）循环。 洗涤液（3）逐渐蒸发。 另一方面，供水器（10）通过管（8）向溢流清洗槽（2）供水。 胺供应商（11）通过管（9）向溢流清洗槽（2）供应胺。 控制单元（12）控制供应的水和胺的量。 因此，在洗涤部分（50）中，从操作开始经过一段时间后，可以抑制水和胺的量的减少，从而抑制洗涤液（3）的洗涤性降低。

公开(公告)号：US08946895B2

公开(公告)日：2015-02-03

申请号：US12389479

申请日：2009-02-20

申请人： Takahiko Kato ,  Hiroshi Nakano ,  Haruo Akahoshi ,  Yuuji Takada ,  Yoshimi Sudo ,  Tetsuo Fujiwara ,  Itaru Kanno ,  Tomoryo Shono ,  Yukinori Hirose

发明人： Takahiko Kato ,  Hiroshi Nakano ,  Haruo Akahoshi ,  Yuuji Takada ,  Yoshimi Sudo ,  Tetsuo Fujiwara ,  Itaru Kanno ,  Tomoryo Shono ,  Yukinori Hirose

IPC分类号： H01L23/48 ,  H01L23/532 ,  H01L21/768

CPC分类号： H01L22/12 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device having Cu wiring including a basic crystal structure which can reduce surface voids, and an inspecting technique for the semiconductor device. In the semiconductor device, surface voids can be reduced down to 1/10 or less of a current practical level by specifying a barrier layer and a seed layer and setting a proportion (frequency) of occupation of a coincidence site lattice (CSL) boundary having a grain boundary Sigma value 27 or less to all crystal grain boundaries of a Cu wiring to 60% or higher. Alternatively, a similar effect of surface void reduction can be obtained by specifying a barrier layer and a seed layer and setting a proportion (frequency) of occupation of a coincidence site lattice (CSL) boundary having a grain boundary Sigma value 3 to all crystal grain boundaries of a Cu wiring to 40% or higher.

摘要翻译： 具有包括可以减小表面空隙的碱性晶体结构的Cu布线的半导体器件和用于半导体器件的检查技术。 在半导体装置中，通过指定阻挡层和种子层，并设定具有一致位点网格（CSL）边界的占有比例（频率），表面空隙可以降低到当前实用水平的1/10以下，具有 对于Cu布线的所有晶界，晶界Sigma值为27以下，为60％以上。 或者，可以通过指定阻挡层和种子层并且将具有晶界Sigma值3的重合位点晶格（CSL）边界的占有比例（频率）设置为全部晶粒，可以获得类似的表面空隙降低效果 Cu布线的边界为40％以上。

公开(公告)号：US08569136B2

公开(公告)日：2013-10-29

申请号：US13438972

申请日：2012-04-04

申请人： Itaru Kanno

发明人： Itaru Kanno

IPC分类号： H01L21/8234

CPC分类号： H01L21/823468 ,  H01L21/823418 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/6653

摘要： A manufacturing method of a semiconductor device is provided which can improve the performance of the semiconductor device. Ion implantation is applied to nMIS regions 1A and 1B and pMIS regions 1C and 1D of a semiconductor substrate 1 with offset spacers formed over sidewalls of gate electrodes GE1, GE2, GE3, and GE4 to thereby form extension regions for source and drain. In this case, a different photoresist pattern is used for each of the nMIS regions 1A and 1B and the pMIS regions 1C and 1D to individually perform the corresponding ion implantation. Every time the photoresist pattern is re-created, the offset spacer is also re-created.

摘要翻译： 提供一种可以提高半导体器件的性能的半导体器件的制造方法。 将离子注入施加到半导体衬底1的nMIS区域1A和1B以及pMIS区域1C和1D，其中半导体衬底1具有形成在栅电极GE1，GE2，GE3和GE4的侧壁上的偏移间隔物，从而形成用于源极和漏极的延伸区域。 在这种情况下，对于nMIS区域1A和1B以及pMIS区域1C和1D中的每一个使用不同的光致抗蚀剂图案来单独执行相应的离子注入。 每次重新制造光致抗蚀剂图案时，也重新创建偏移间隔物。

公开(公告)号：US20100330794A1

公开(公告)日：2010-12-30

申请号：US12819675

申请日：2010-06-21

申请人： Hirokazu KURISU ,  Yutaka Takeshima ,  Itaru Kanno ,  Masahiko Higashi ,  Yusaku Hirota

发明人： Hirokazu KURISU ,  Yutaka Takeshima ,  Itaru Kanno ,  Masahiko Higashi ,  Yusaku Hirota

IPC分类号： H01L21/28 ,  H01L21/306

CPC分类号： H01L21/02063 ,  H01L21/28518 ,  H01L21/76831 ,  H01L21/76895

摘要： There is provided a method for cleaning a semiconductor device capable of making compatible the inhibition of dissolution of a gate metal material and the acquisition of a favorable contact resistance. A method for cleaning a semiconductor device includes steps: a semiconductor substrate including silicon, and having a main surface is prepared; a multilayer gate including a metal layer and a silicon layer stacked sequentially from the bottom is formed over the main surface; a silicide layer is formed over the main surface and the silicon layer surface; an insulation layer is formed over the silicide layer in each of the main surface and the multilayer gate surface; a shared contact hole is formed in the insulation layer in such a manner that the silicide layer in the main surface of the semiconductor substrate and the surface of the multilayer gate is exposed from the insulation layer; and the shared contact hole is subjected to sulfuric acid cleaning, aqueous hydrogen peroxide cleaning, and APM cleaning separately, respectively, thereby to remove an altered layer formed in the shared contact hole.

摘要翻译： 提供了一种能够使与栅极金属材料的溶解的抑制兼容并且获得良好的接触电阻的半导体器件的清洁方法。 一种清洗半导体器件的方法，包括步骤：制备包括硅并具有主表面的半导体衬底; 在主表面上形成包括从底部依次堆叠的金属层和硅层的多层栅极; 在主表面和硅层表面上形成硅化物层; 在主表面和多层栅极表面中的每一个中的硅化物层上形成绝缘层; 在绝缘层中形成共享接触孔，使得半导体衬底的主表面中的硅化物层和多层栅极的表面从绝缘层露出; 分别对共用接触孔进行硫酸清洗，过氧化氢水清洗和APM清洗，从而除去形成在共用接触孔中的变化层。

公开(公告)号：US20070141849A1

公开(公告)日：2007-06-21

申请号：US10591474

申请日：2005-03-09

申请人： Itaru Kanno ,  Yusaku Hirota ,  Kenji Sekiguchi ,  Hiroshi Nagayasu ,  Shouichi Shimose

发明人： Itaru Kanno ,  Yusaku Hirota ,  Kenji Sekiguchi ,  Hiroshi Nagayasu ,  Shouichi Shimose

IPC分类号： B08B3/00 ,  B41J2/05 ,  H01L21/302

CPC分类号： H01L21/67051 ,  B01F3/04049 ,  B05B7/0433 ,  B08B3/02 ,  Y10S134/902

摘要： An object of the present is to uniform particle diameters and speeds of liquid droplets in a two-fluid nozzle for cleaning substrates which mixes gas and liquid internally and injects liquid droplets with gas so as to clean a substrate. The two-fluid nozzle for cleaning substrates has a gas supply passage for supplying gas, a liquid supply passage for supplying liquid, and a lead-out passage for leading out internally-formed liquid droplets, wherein an injection port for injecting liquid droplets to the outside is formed at the front end of the lead-out passage, and wherein a cross-sectional area Sb of the injection port is formed smaller than a cross-sectional area Sa of the lead-out passage, and a cross sectional area Sc of an exit of the gas supply passage is formed smaller than the cross-sectional area Sa of the lead-out passage.

摘要翻译： 本发明的目的是在二流体喷嘴中用于清洁衬底的液滴的均匀的粒子直径和速度，这些衬底在内部混合气体和液体，并且用气体注入液滴以便清洁衬底。 用于清洁基板的双流体喷嘴具有用于供应气体的气体供应通道，用于供应液体的液体供应通道和用于引出内部形成的液滴的引出通道，其中用于将液滴注入到喷嘴 外部形成在引出通道的前端，并且其中注入口的横截面面积Sb形成为小于引出通道的横截面积Sa，横截面面积Sc 气体供给通道的出口形成为小于引出通道的横截面面积Sa。