公开(公告)号：US20160313627A1

公开(公告)日：2016-10-27

申请号：US15191569

申请日：2016-06-24

Applicant: Texas Instruments Incorporated

Inventor： Neng Jiang ,  Joel Soman ,  Thomas Warren Lassiter ,  Mary Alyssa Drummond Roby ,  Nayeemuddin Mohammed ,  YungShan Chang

IPC: G02F1/29 ,  G03B13/36 ,  H01L41/332 ,  H04N5/225 ,  C23F4/00 ,  H01L41/31

CPC classification number: G02F1/29 ,  C23F1/00 ,  C23F4/00 ,  G02B7/09 ,  G02F2001/294 ,  G03B13/36 ,  H01L21/32136 ,  H01L21/32139 ,  H01L41/31 ,  H01L41/332 ,  H04N5/2254 ,  H04N5/232 ,  H04N5/23229

Abstract: A method includes placing a device having a titanium nitride layer into a chamber. The device also has a mask that includes a photoresist material and an aluminum copper hardmask. The method also includes performing an ashing process on the mask using the chamber. The method further includes, after the ashing process, performing an etching process using the chamber to etch through portions of the titanium nitride layer. Performing the etching process includes flowing a gas mixture containing tetrafluoromethane (CF4) and oxygen gas (O2) into the chamber at a temperature of at least about 200° C.

公开(公告)号：US20150380635A1

公开(公告)日：2015-12-31

申请号：US14734048

申请日：2015-06-09

Applicant: Texas Instruments Incorporated

Inventor： Bhaskar Srinivasan ,  Sarah Emily Treece ,  YungShan Chang ,  Ollen Harvey Mullis ,  Mary Alyssa Drummond Roby

IPC: H01L41/08 ,  H01L41/319 ,  C23C14/06 ,  C23C14/35 ,  C23C14/34 ,  C23C14/18 ,  H01L41/18 ,  C23C14/02

CPC classification number: H01L41/0815 ,  C23C14/0036 ,  C23C14/025 ,  C23C14/088 ,  C23C14/345 ,  C23C14/354 ,  H01L41/18 ,  H01L41/316 ,  H01L41/319

Abstract: A microelectronic device containing a piezoelectric component is formed sputtering an adhesion layer of titanium on a substrate by an ionized metal plasma (IMP) process. The adhesion layer is oxidized so that at least a portion of the titanium is converted to a layer of substantially stoichiometric titanium dioxide (TiO2) at a top surface of the adhesion layer. A layer of platinum is formed on the titanium dioxide of the adhesion layer; the layer of platinum has a (111) crystal orientation and an X-ray rocking curve FWHM value of less than 3 degrees. A layer of piezoelectric material is formed on the layer of platinum. The piezoelectric material may include lead zirconium titanate.

Abstract translation: 通过电离金属等离子体（IMP）工艺，在衬底上形成含有压电元件的微电子器件溅射钛的粘附层。 粘附层被氧化，使得至少一部分钛在粘合层的顶表面处转化为基本上化学计量的二氧化钛（TiO 2）层。 在粘合层的二氧化钛上形成铂层; 铂层具有（111）晶体取向和X射线摇摆曲线FWHM值小于3度。 在铂层上形成一层压电材料。 压电材料可以包括钛酸铅锆。

公开(公告)号：US09890040B2

公开(公告)日：2018-02-13

申请号：US14533947

申请日：2014-11-05

Applicant: Texas Instruments Incorporated

Inventor： YungShan Chang ,  Ricky A. Jackson ,  Jeff W. Ritchison ,  Neng Jiang

IPC: G02B7/04 ,  G02B7/09 ,  B81C1/00 ,  B81B7/02 ,  G02B13/14 ,  G02B26/06 ,  B81B3/00

CPC classification number: B81C1/00523 ,  B81B3/0021 ,  B81B3/0072 ,  B81B7/02 ,  B81C1/00349 ,  B81C2201/0174 ,  G02B13/14 ,  G02B26/06

Abstract: An apparatus includes a lens material forming a lens. The apparatus also includes a piezoelectric capacitor over the lens material, where the piezoelectric capacitor is configured to change a shape of the lens material in response to a voltage across the piezoelectric capacitor to thereby change a focus of the lens. The apparatus further includes at least one stress compensation ring over a portion of the lens material and over at least a portion of the piezoelectric capacitor. The at least one stress compensation ring is configured to at least partially reduce bending of the lens material caused by stress on or in the lens material.

公开(公告)号：US09834433B2

公开(公告)日：2017-12-05

申请号：US14553812

申请日：2014-11-25

Applicant: Texas Instruments Incorporated

Inventor： YungShan Chang ,  Ricky A. Jackson

IPC: B81B7/00 ,  G02B26/08 ,  G02B1/14

CPC classification number: B81B7/0029 ,  G02B1/14 ,  G02B26/0875

Abstract: A piezoelectric optical micro-electro-mechanical systems (POMEMS) device includes a glass layer having a bottom surface and a top surface. The device may also include an upper moisture barrier layer having a top surface and a bottom surface in which the bottom surface of the top moisture barrier layer is substantially coextensive with and interfaces with the top surface of the glass layer. A piezo stack may be attached above the upper moisture barrier layer. The device may also include a lower moisture barrier layer having a bottom surface and a top surface. The top surface of the lower moisture barrier layer is substantially coextensive with and interfaces with the bottom surface of the glass layer. A semiconductor substrate may be attached below the bottom moisture barrier layer.

公开(公告)号：US20170338401A1

公开(公告)日：2017-11-23

申请号：US15669309

申请日：2017-08-04

Applicant: Texas Instruments Incorporated

Inventor： Neng Jiang ,  Xin Li ,  Joel Soman ,  Thomas Warren Lassiter ,  Mary Alyssa Drummond Roby ,  YungShan Chang

IPC: H01L41/332 ,  H01L41/253 ,  H01L41/25 ,  H01L41/314 ,  H01L41/187

CPC classification number: H01L41/332 ,  H01L41/1876 ,  H01L41/25 ,  H01L41/253 ,  H01L41/314

Abstract: A microelectronic device containing a piezoelectric thin film element is formed by oxidizing a top surface of a piezoelectric layer with an oxygen plasma, and subsequently forming an etch mask containing photoresist on the oxidized top surface. The etch mask is conditioned with an oven bake followed by a UV bake. The piezoelectric layer is etched using a three step process: a first step includes a wet etch of an aqueous solution of about 5% NH4F, about 1.2% HF, and about 18% HCl, maintaining a ratio of the HCl to the HF of about 15.0, which removes a majority of the piezoelectric layer. A second step includes an agitated rinse. A third step includes a short etch in the aqueous solution of NH4F, HF, and HCl.

公开(公告)号：US09405089B2

公开(公告)日：2016-08-02

申请号：US14533999

申请日：2014-11-05

Applicant: Texas Instruments Incorporated

Inventor： Neng Jiang ,  Joel Soman ,  Thomas Warren Lassiter ,  Mary Alyssa Drummond Roby ,  Nayeemuddin Mohammed ,  YungShan Chang

IPC: G02B7/09 ,  H01L21/3213 ,  H04N5/232 ,  C23F1/00 ,  C23F4/00

CPC classification number: G02F1/29 ,  C23F1/00 ,  C23F4/00 ,  G02B7/09 ,  G02F2001/294 ,  G03B13/36 ,  H01L21/32136 ,  H01L21/32139 ,  H01L41/31 ,  H01L41/332 ,  H04N5/2254 ,  H04N5/232 ,  H04N5/23229

Abstract: A method includes placing a device having a titanium nitride layer into a chamber. The device also has a mask that includes a photoresist material and an aluminum copper hardmask. The method also includes performing an ashing process on the mask using the chamber. The method further includes, after the ashing process, performing an etching process using the chamber to etch through portions of the titanium nitride layer. Performing the etching process includes flowing a gas mixture containing tetrafluoromethane (CF4) and oxygen gas (O2) into the chamber at a temperature of at least about 200° C.

Abstract translation: 一种方法包括将具有氮化钛层的器件放置在腔室中。 该装置还具有包括光致抗蚀剂材料和铝铜硬掩模的掩模。 该方法还包括使用腔室对掩模进行灰化处理。 该方法还包括在灰化处理之后，使用该腔室进行蚀刻工艺以蚀刻穿过氮化钛层的一部分。 执行蚀刻工艺包括在至少约200℃的温度下将含有四氟甲烷（CF 4）和氧气（O 2）的气体混合物流入室中。

公开(公告)号：US20150380637A1

公开(公告)日：2015-12-31

申请号：US14738847

申请日：2015-06-13

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Neng Jiang ,  Xin Li ,  Joel Soman ,  Thomas Warren Lassiter ,  Mary Alyssa Drummond Roby ,  YungShan Chang

IPC: H01L41/332 ,  H01L41/253 ,  H01L41/25 ,  H01L41/314

CPC classification number: H01L41/332 ,  H01L41/1876 ,  H01L41/25 ,  H01L41/253 ,  H01L41/314

Abstract: A microelectronic device containing a piezoelectric thin film element is formed by oxidizing a top surface of a piezoelectric layer with an oxygen plasma, and subsequently forming an etch mask containing photoresist on the oxidized top surface. The etch mask is conditioned with an oven bake followed by a UV bake. The piezoelectric layer is etched using a three step process: a first step includes a wet etch of an aqueous solution of about 5% NH4F, about 1.2% HF, and about 18% HCl, maintaining a ratio of the HCl to the HF of about 15.0, which removes a majority of the piezoelectric layer. A second step includes an agitated rinse. A third step includes a short etch in the aqueous solution of NH4F, HF, and HCl.

Abstract translation: 包含压电薄膜元件的微电子器件通过用氧等离子体氧化压电层的顶表面，随后在氧化的顶表面上形成含有光致抗蚀剂的蚀刻掩模来形成。 蚀刻掩模用烤箱烘烤，然后进行UV烘烤。 使用三步法蚀刻压电层：第一步骤包括湿蚀刻约5％NH 4 F水溶液，约1.2％HF和约18％HCl，保持HCl与HF的比例约为 15.0，其去除了大部分的压电层。 第二步包括搅拌漂洗。 第三步包括NH4F，HF和HCl水溶液中的短蚀刻。

公开(公告)号：US20150376000A1

公开(公告)日：2015-12-31

申请号：US14534012

申请日：2014-11-05

Applicant: Texas Instruments Incorporated

Inventor： YungShan Chang ,  Ricky A. Jackson ,  Joel Soman

IPC: B81C1/00

CPC classification number: G02B26/0858 ,  H01L41/0805 ,  H01L41/1876 ,  H01L41/253

Abstract: A method includes forming a piezoelectric optical micro-electromechanical system (MEMS) device having a piezoelectric capacitor over a lens material. The lens material forms a lens, and the piezoelectric capacitor is configured to change a shape of the lens material in order to change a focus of the lens. The piezoelectric capacitor includes first and second electrodes separated by at least one piezoelectric material. The method also includes performing a first anneal on the piezoelectric optical MEMS device in nitrogen gas and performing a second anneal on the piezoelectric optical MEMS device in oxygen gas after performing the first anneal. The method further includes depositing a protective oxide layer over the lens material and the piezoelectric capacitor after performing the second anneal. The first anneal in the nitrogen gas causes the piezoelectric optical MEMS device to be substantially free of discharge defects.

Abstract translation: 一种方法包括在透镜材料上形成具有压电电容器的压电光学微机电系统（MEMS）器件。 透镜材料形成透镜，并且压电电容器被配置为改变透镜材料的形状以改变透镜的焦点。 压电电容器包括由至少一个压电材料隔开的第一和第二电极。 该方法还包括在氮气中在压电光学MEMS器件上执行第一退火，并且在执行第一退火之后在氧气中的压电光学MEMS器件上执行第二退火。 该方法还包括在执行第二退火之后在透镜材料和压电电容器上沉积保护氧化物层。 氮气中的第一次退火使得压电光学MEMS器件基本上没有放电缺陷。