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320 条记录 (耗时 0.023 秒)

    Nano-enhanced Raman spectroscopy-active nanostructures including elongated components and methods of making the same
    11.
    发明授权
    Nano-enhanced Raman spectroscopy-active nanostructures including elongated components and methods of making the same 有权
    纳米增强拉曼光谱 - 包括细长组分的活性纳米结构及其制备方法

    公开(公告)号：US07236242B2

    公开(公告)日：2007-06-26

    申请号：US11044105

    申请日：2005-01-27

    申请人： Theodore I. Kamins ,  R. Stanley Williams

    发明人： Theodore I. Kamins ,  R. Stanley Williams

    IPC分类号： G01N21/65 ,  G01J3/44

    CPC分类号： G01N21/658

    摘要： An NERS-active structure is disclosed that includes a substrate and at least one elongated component disposed on the substrate. The at least one elongated component may include two conducting strips including an NERS-active material and an insulating strip positioned between the two conducting strips. Alternatively, the at least one elongated component may include a homogeneous component. An NERS system is also disclosed that includes an NERS-active structure. Also disclosed are methods for forming an NERS-active structure and methods for performing NERS with NERS-active structures.

    摘要翻译： 公开了一种包括衬底和设置在衬底上的至少一个细长部件的NERS-活性结构。 所述至少一个细长部件可以包括两个导电条，包括NERS-活性材料和位于两个导电条之间的绝缘条。 或者，至少一个细长部件可以包括均匀的部件。 还公开了包括NERS活性结构的NERS系统。 还公开了形成NERS活性结构的方法和用NERS活性结构进行NERS的方法。

    Controlling phase response in a sub-wavelength grating lens
    12.
    发明授权
    Controlling phase response in a sub-wavelength grating lens 有权
    控制亚波长光栅透镜中的相位响应

    公开(公告)号：US09354363B2

    公开(公告)日：2016-05-31

    申请号：US13640348

    申请日：2010-04-13

    申请人： Wei Wu ,  R. Stanley Williams ,  Jingjing Li ,  Theodore I. Kamins ,  Marco Fiorentino

    发明人： Wei Wu ,  R. Stanley Williams ,  Jingjing Li ,  Theodore I. Kamins ,  Marco Fiorentino

    IPC分类号： G02B5/18 ,  B05D5/06

    CPC分类号： G02B5/1809 ,  B05D5/06 ,  G02B5/18 ,  G02B5/1828 ,  G02B5/1861

    摘要： A sub-wavelength grating device having controlled phase response includes a grating layer having line widths, line thicknesses, line periods, and line spacings selected to produce a first level of control in phase changes of different portions of a beam of light reflected from the grating layer. The device also includes a substrate affixed to the grating layer that produces a second level of control in phase changes of different portions of a beam of light reflected from the grating layer, the second level of control being accomplished abrupt stepping of the substrate in a horizontal dimension, ramping the substrate in a horizontal dimension, or changing the index of refraction in a horizontal dimension.

    摘要翻译： 具有受控相位响应的亚波长光栅装置包括具有线宽，线厚度，线周期和线间隔的光栅层，其被选择以产生从光栅反射的光束的不同部分的相位变化中的第一级控制 层。 该装置还包括固定到光栅层的衬底，其产生从光栅层反射的光束的不同部分的相位变化的第二级控制，第二级控制是在水平方向上完成衬底的突然步进 尺寸，在水平尺寸上斜化基底，或改变水平尺寸的折射率。

    Programmable Bipolar Electronic Device
    13.
    发明申请
    Programmable Bipolar Electronic Device 有权
    可编程双极电子器件

    公开(公告)号：US20110228592A1

    公开(公告)日：2011-09-22

    申请号：US13130805

    申请日：2009-01-13

    申请人： Theodore I. Kamins ,  R. Stanley Williams

    发明人： Theodore I. Kamins ,  R. Stanley Williams

    IPC分类号： G11C11/00 ,  H01L45/00

    CPC分类号： G11C13/0002 ,  G11C13/003 ,  G11C2213/52 ,  G11C2213/53 ,  H01L27/101 ,  H01L27/1026 ,  H01L45/08 ,  H01L45/1206 ,  H01L45/122 ,  H01L45/14 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147

    摘要： A configurable memristive device (300) for regulating an electrical signal includes a memristive matrix (350) containing a first dopant species; emitter (320), collector (310), and a base electrodes (330, 340) which are in contact with the memristive matrix (350); and a mobile dopant species contained within a central region (360) contiguous with the base electrodes (330, 340), the mobile dopant species moving within the memristive matrix (350) in response to a programming electrical field. A method of configuring and using a memristive device (300) includes: applying a programming electrical field across a memristive matrix (350) such that a mobile dopant species creates a central doped region (360) which bisects the memristive matrix (350); and applying a control voltage to the central doped region (360) to regulate current flow between an emitter electrode (320) and a collector electrode (310).

    摘要翻译： 用于调节电信号的可配置忆阻装置（300）包括含有第一掺杂剂物质的忆阻矩阵（350） 发射极（320），集电极（310）以及与所述忆阻矩阵（350）接触的基极（330,340）; 以及包含在与所述基极（330,340）相邻的中心区域（360）内的移动掺杂剂物质，所述移动掺杂剂物质响应于编程电场在所述忆阻矩阵（350）内移动。 一种配置和使用忆阻器件（300）的方法包括：跨越忆阻矩阵（350）施加编程电场，使得移动掺杂物物质形成将所述忆阻矩阵（350）平分的中心掺杂区域（360）; 以及向所述中心掺杂区域（360）施加控制电压以调节发射极电极（320）和集电极电极（310）之间的电流。

    Electrically Actuated Devices
    14.
    发明申请
    Electrically Actuated Devices 有权
    电动元件

    公开(公告)号：US20110181352A1

    公开(公告)日：2011-07-28

    申请号：US13121918

    申请日：2008-12-23

    申请人： Theodore I. Kamins ,  R. Stanley Williams

    发明人： Theodore I. Kamins ,  R. Stanley Williams

    IPC分类号： G05F3/16 ,  H01L45/00 ,  H01L21/479

    CPC分类号： H01L27/1021 ,  H01L21/823807

    摘要： An electrically actuated device includes a first electrode, a second electrode, and an active region disposed between the first and second electrodes. At least two dopants are present in a spatially varying region of the active region prior to device actuation. The at least two dopants have opposite conductivity types and different mobilities.

    摘要翻译： 电驱动装置包括第一电极，第二电极和设置在第一和第二电极之间的有源区。 在器件致动之前，至少两个掺杂剂存在于有源区的空间变化区域中。 至少两种掺杂剂具有相反的导电类型和不同的迁移率。

    Three dimensional multilayer circuit
    19.
    发明授权
    Three dimensional multilayer circuit 有权
    三维多层电路

    公开(公告)号：US09324718B2

    公开(公告)日：2016-04-26

    申请号：US13260019

    申请日：2010-01-29

    申请人： Wei Wu ,  R. Stanley Williams

    发明人： Wei Wu ,  R. Stanley Williams

    IPC分类号： H01L25/00 ,  H03K19/177 ,  H01L21/46 ,  H01L21/4763 ,  H01L27/10 ,  H01L27/02 ,  H01L27/06 ,  H01L27/24

    CPC分类号： H01L27/101 ,  H01L27/0207 ,  H01L27/0688 ,  H01L27/24

    摘要： A three dimensional multilayer circuit (600) includes a plurality of crossbar arrays (512) made up of intersecting crossbar segments (410, 420) and programmable crosspoint devices (514) interposed between the intersecting crossbar segments (410, 420). Shift pins (505, 510) are used to shift connection domains (430) of the intersecting crossbar segments (410, 420) between stacked crossbar arrays (512) such that the programmable crosspoint devices (514) are uniquely addressed. The shift pins (505, 510) make electrical connections between crossbar arrays (512) by passing vertically between crossbar segments (410, 510) in the first crossbar array (512) and crossbar segments in a second crossbar array. A method for transforming multilayer circuits is also described.

    摘要翻译： 三维多层电路（600）包括由相交的横杆段（410,420）和插入在相交的横杆段（410,420）之间的可编程交叉点装置（514）组成的多个横杆阵列（512）。 移位销（505,510）用于使堆叠的横杆阵列（512）之间的交叉横截面段（410,420）的连接区域（430）移位，使得可编程交叉点设备（514）被唯一地寻址。 换档销（505,510）通过在第一交叉杆阵列（512）中的横杆段（410,510）和第二横杆阵列中的横杆段之间垂直地穿过横杆阵列（512）之间进行电连接。 还描述了用于转换多层电路的方法。