公开(公告)号：US08748292B2

公开(公告)日：2014-06-10

申请号：US11073780

申请日：2005-03-07

申请人： Thomas A. Langdo ,  Matthew T. Currie ,  Richard Hammond ,  Anthony J. Lochtefeld ,  Eugene A. Fitzgerald

发明人： Thomas A. Langdo ,  Matthew T. Currie ,  Richard Hammond ,  Anthony J. Lochtefeld ,  Eugene A. Fitzgerald

IPC分类号： H01L21/30 ,  H01L29/06 ,  H01L21/762 ,  H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L29/78 ,  H01L21/84 ,  H01L21/02

CPC分类号： H01L21/76254 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/76259 ,  H01L21/76264 ,  H01L21/76275 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/66772 ,  H01L29/66916 ,  H01L29/7842 ,  H01L29/78603 ,  H01L29/78684 ,  H01L29/78687

摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。

公开(公告)号：US08026534B2

公开(公告)日：2011-09-27

申请号：US12907787

申请日：2010-10-19

申请人： Thomas A. Langdo ,  Matthew T. Currie ,  Richard Hammond ,  Anthony J. Lochtefeld ,  Eugene A. Fitzgerald

发明人： Thomas A. Langdo ,  Matthew T. Currie ,  Richard Hammond ,  Anthony J. Lochtefeld ,  Eugene A. Fitzgerald

IPC分类号： H01L31/102

CPC分类号： H01L29/7847 ,  H01L21/28518 ,  H01L21/76254 ,  H01L21/76256 ,  H01L21/76259 ,  H01L21/76264 ,  H01L21/76275 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/1033 ,  H01L29/165 ,  H01L29/41783 ,  H01L29/66242 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/66787 ,  H01L29/66916 ,  H01L29/7842 ,  H01L29/7843 ,  H01L29/7849 ,  H01L29/785 ,  H01L29/78603 ,  H01L29/78684 ,  H01L29/78687

摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。

公开(公告)号：US20080128751A1

公开(公告)日：2008-06-05

申请号：US11943188

申请日：2007-11-20

申请人： Thomas A. Langdo ,  Matthew T. Currie ,  Richard Hammond ,  Anthony J. Lochtefeld ,  Eugene A. Fitzgerald

发明人： Thomas A. Langdo ,  Matthew T. Currie ,  Richard Hammond ,  Anthony J. Lochtefeld ,  Eugene A. Fitzgerald

IPC分类号： H01L29/20 ,  H01L21/30

CPC分类号： H01L29/7847 ,  H01L21/28518 ,  H01L21/76254 ,  H01L21/76256 ,  H01L21/76259 ,  H01L21/76264 ,  H01L21/76275 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/1033 ,  H01L29/165 ,  H01L29/41783 ,  H01L29/66242 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/66787 ,  H01L29/66916 ,  H01L29/7842 ,  H01L29/7843 ,  H01L29/7849 ,  H01L29/785 ,  H01L29/78603 ,  H01L29/78684 ,  H01L29/78687

摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。

公开(公告)号：US07297612B2

公开(公告)日：2007-11-20

申请号：US11127508

申请日：2005-05-12

申请人： Thomas A. Langdo ,  Matthew T. Currie ,  Richard Hammond ,  Anthony J. Lochtefeld ,  Eugene A. Fitzgerald

发明人： Thomas A. Langdo ,  Matthew T. Currie ,  Richard Hammond ,  Anthony J. Lochtefeld ,  Eugene A. Fitzgerald

IPC分类号： H01L21/30

CPC分类号： H01L29/7847 ,  H01L21/28518 ,  H01L21/76254 ,  H01L21/76256 ,  H01L21/76259 ,  H01L21/76264 ,  H01L21/76275 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/1033 ,  H01L29/165 ,  H01L29/41783 ,  H01L29/66242 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/66787 ,  H01L29/66916 ,  H01L29/7842 ,  H01L29/7843 ,  H01L29/7849 ,  H01L29/785 ,  H01L29/78603 ,  H01L29/78684 ,  H01L29/78687

摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体硅法相结合。

公开(公告)号：US07109516B2

公开(公告)日：2006-09-19

申请号：US11211933

申请日：2005-08-25

申请人： Thomas A. Langdo ,  Matthew T. Currie ,  Glyn Braithwaite ,  Richard Hammond ,  Anthony J. Lochtefeld ,  Eugene A. Fitzgerald

发明人： Thomas A. Langdo ,  Matthew T. Currie ,  Glyn Braithwaite ,  Richard Hammond ,  Anthony J. Lochtefeld ,  Eugene A. Fitzgerald

IPC分类号： H01L31/0328 ,  H01L29/745 ,  H01L27/148 ,  H01L29/80 ,  H01L21/332 ,  H01L21/00

CPC分类号： H01L29/785 ,  H01L21/76254 ,  H01L21/76259 ,  H01L21/76264 ,  H01L21/76275 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/66772 ,  H01L29/66795 ,  H01L29/66916 ,  H01L29/7842 ,  H01L29/78603 ,  H01L29/78684 ,  H01L29/78687

摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。

公开(公告)号：US07776697B2

公开(公告)日：2010-08-17

申请号：US11847721

申请日：2007-08-30

申请人： Matthew T. Currie ,  Anthony J. Lochtefeld ,  Richard Hammond ,  Eugene A. Fitzgerald

发明人： Matthew T. Currie ,  Anthony J. Lochtefeld ,  Richard Hammond ,  Eugene A. Fitzgerald

IPC分类号： H01L21/00

CPC分类号： H01L29/1054 ,  H01L29/105 ,  H01L29/161 ,  H01L29/36 ,  H01L29/66477 ,  H01L29/66545 ,  H01L29/66651 ,  H01L29/78 ,  H01L29/7842 ,  Y10S438/926

摘要： Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the strained material layers are kept free of impurities that can interdiffuse from adjacent portions of the semiconductor. When impurities are present in certain regions of the strained material layers, there is degradation in device performance. By employing semiconductor structures and devices (e.g., field effect transistors or “FETs”) that have the features described, or are fabricated in accordance with the steps described, device operation is enhanced.

公开(公告)号：US08344355B2

公开(公告)日：2013-01-01

申请号：US13327194

申请日：2011-12-15

申请人： Matthew T. Currie ,  Anthony J. Lochtefeld ,  Richard Hammond ,  Eugene A. Fitzgerald

发明人： Matthew T. Currie ,  Anthony J. Lochtefeld ,  Richard Hammond ,  Eugene A. Fitzgerald

IPC分类号： H01L29/06

CPC分类号： H01L29/1054 ,  H01L29/105 ,  H01L29/161 ,  H01L29/36 ,  H01L29/66477 ,  H01L29/66545 ,  H01L29/66651 ,  H01L29/78 ,  H01L29/7842 ,  Y10S438/926

摘要： Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the strained material layers are kept free of impurities that can interdiffuse from adjacent portions of the semiconductor. When impurities are present in certain regions of the strained material layers, there is degradation in device performance. By employing semiconductor structures and devices (e.g., field effect transistors or “FETs”) that have the features described, or are fabricated in accordance with the steps described, device operation is enhanced.

摘要翻译： 包括具有无杂质区域的应变材料层的半导体结构和器件及其制造方法。 应变材料层的某些区域保持没有可以从半导体的相邻部分相互扩散的杂质。 当杂质存在于应变材料层的某些区域中时，器件性能下降。 通过采用具有所描述或者根据所述步骤制造的特征的半导体结构和器件（例如，场效应晶体管或FET），器件操作被增强。

公开(公告)号：US07846802B2

公开(公告)日：2010-12-07

申请号：US11848642

申请日：2007-08-31

申请人： Matthew T. Currie ,  Anthony J. Lochtefeld ,  Richard Hammond ,  Eugene A. Fitzgerald

发明人： Matthew T. Currie ,  Anthony J. Lochtefeld ,  Richard Hammond ,  Eugene A. Fitzgerald

IPC分类号： H01L21/00

CPC分类号： H01L29/1054 ,  H01L29/105 ,  H01L29/161 ,  H01L29/36 ,  H01L29/66477 ,  H01L29/66545 ,  H01L29/66651 ,  H01L29/78 ,  H01L29/7842 ,  Y10S438/926

摘要： Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the strained material layers are kept free of impurities that can interdiffuse from adjacent portions of the semiconductor. When impurities are present in certain regions of the strained material layers, there is degradation in device performance. By employing semiconductor structures and devices (e.g., field effect transistors or “FETs”) that have the features described, or are fabricated in accordance with the steps described, device operation is enhanced.

摘要翻译： 包括具有无杂质区域的应变材料层的半导体结构和器件及其制造方法。 应变材料层的某些区域保持没有可以从半导体的相邻部分相互扩散的杂质。 当杂质存在于应变材料层的某些区域中时，器件性能下降。 通过采用具有所描述或者根据所描述的步骤制造的特征的半导体结构和器件（例如，场效应晶体管或“FET”），器件操作被增强。

公开(公告)号：US08106380B2

公开(公告)日：2012-01-31

申请号：US12982101

申请日：2010-12-30

申请人： Matthew T. Currie ,  Anthony J. Lochtefeld ,  Richard Hammond ,  Eugene Fitzgerald

发明人： Matthew T. Currie ,  Anthony J. Lochtefeld ,  Richard Hammond ,  Eugene Fitzgerald

IPC分类号： H01L21/00

CPC分类号： H01L29/1054 ,  H01L29/105 ,  H01L29/161 ,  H01L29/36 ,  H01L29/66477 ,  H01L29/66545 ,  H01L29/66651 ,  H01L29/78 ,  H01L29/7842 ,  Y10S438/926

摘要： Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the strained material layers are kept free of impurities that can interdiffuse from adjacent portions of the semiconductor. When impurities are present in certain regions of the strained material layers, there is degradation in device performance. By employing semiconductor structures and devices (e.g., field effect transistors or “FETs”) that have the features described, or are fabricated in accordance with the steps described, device operation is enhanced.

摘要翻译： 包括具有无杂质区域的应变材料层的半导体结构和器件及其制造方法。 应变材料层的某些区域保持没有可以从半导体的相邻部分相互扩散的杂质。 当杂质存在于应变材料层的某些区域中时，器件性能下降。 通过采用具有所描述的或者根据所描述的步骤制造的特征的半导体结构和器件（例如，场效应晶体管或“FET”），器件操作被增强。

公开(公告)号：US08129821B2

公开(公告)日：2012-03-06

申请号：US10944618

申请日：2004-09-17

申请人： Matthew T. Currie ,  Richard Hammond

发明人： Matthew T. Currie ,  Richard Hammond

IPC分类号： H01L31/117

CPC分类号： H01L29/7848 ,  H01L21/28052 ,  H01L21/2807 ,  H01L21/28255 ,  H01L21/28518 ,  H01L21/324 ,  H01L29/0847 ,  H01L29/1054 ,  H01L29/161 ,  H01L29/165 ,  H01L29/45 ,  H01L29/49 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7842

摘要： A semiconductor device and a method for fabricating a semiconductor device involve a semiconductor layer that includes a first material and a second material. The first and second materials can be silicon and germanium. A contact of the device has a portion proximal to the semiconductor layer and a portion distal to the semiconductor layer. The distal portion includes the first material and the second material. A metal layer formed adjacent to the relaxed semiconductor layer and adjacent to the distal portion of the contact is simultaneously reacted with the relaxed semiconductor layer and with the distal portion of the contact to provide metallic contact material.

摘要翻译： 半导体器件和制造半导体器件的方法包括包括第一材料和第二材料的半导体层。 第一和第二种材料可以是硅和锗。 器件的触点具有靠近半导体层的部分和远离半导体层的部分。 远侧部分包括第一材料和第二材料。 与松弛的半导体层相邻并且邻近接触的远端部分形成的金属层与松弛的半导体层和接触的远端部分同时反应以提供金属接触材料。