公开(公告)号：US20050191856A1

公开(公告)日：2005-09-01

申请号：US10788899

申请日：2004-02-27

申请人： Kevin Torek ,  Kevin Shea ,  Thomas Graettinger

发明人： Kevin Torek ,  Kevin Shea ,  Thomas Graettinger

IPC分类号： H01L21/02 ,  H01L21/302 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L28/91 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32134 ,  H01L21/32135 ,  H01L27/10852

摘要： An etching process includes providing a dielectric first film on a substrate and a sacrificial second film on the dielectric first film. A conductive structure such as a container capacitor is formed in a recess in the first and second films. The conductive structure is exposed as to its external surface by an etch process that resists destructive collapse of the conductive structure.

公开(公告)号：US20070187738A1

公开(公告)日：2007-08-16

申请号：US11786219

申请日：2007-04-11

申请人： Thomas Graettinger

发明人： Thomas Graettinger

IPC分类号： H01L27/108 ,  H01L29/94

CPC分类号： H01L28/91 ,  H01L21/7687 ,  H01L27/10852 ,  H01L27/10855 ,  H01L28/90

摘要： A process of making a stud capacitor structure is disclosed. The process includes embedding the stud in a dielectric stack. In one embodiment, the process includes forming an electrically conductive seed film in a contact corridor of the dielectric stack. A storage cell stud is also disclosed. The storage cell stud can be employed in a dynamic random-access memory device. An electrical system is also disclosed that includes the storage cell stud.

摘要翻译： 公开了一种制造双绞电容器结构的工艺。 该过程包括将柱嵌入电介质堆叠中。 在一个实施例中，该方法包括在电介质堆叠的接触走廊中形成导电种子膜。 还公开了存储单元柱。 存储单元螺柱可用于动态随机存取存储器件中。 还公开了一种包括存储单元螺柱的电气系统。

公开(公告)号：US20060014369A1

公开(公告)日：2006-01-19

申请号：US11215922

申请日：2005-08-30

申请人： Thomas Graettinger

发明人： Thomas Graettinger

IPC分类号： H01L21/44

CPC分类号： H01L28/91 ,  H01L21/7687 ,  H01L27/10852 ,  H01L27/10855 ,  H01L28/90

摘要： A process of making a stud capacitor structure is disclosed. The process includes embedding the stud in a dielectric stack. In one embodiment, the process includes forming an electrically conductive seed film in a contact corridor of the dielectric stack. A storage cell stud is also disclosed. The storage cell stud can be employed in a dynamic random-access memory device. An electrical system is also disclosed that includes the storage cell stud.

公开(公告)号：US20050054159A1

公开(公告)日：2005-03-10

申请号：US10733181

申请日：2003-12-10

申请人： H. Manning ,  Thomas Graettinger ,  Marsela Pontoh

发明人： H. Manning ,  Thomas Graettinger ,  Marsela Pontoh

IPC分类号： H01L21/02 ,  H01L21/3205 ,  H01L21/334 ,  H01L21/8242 ,  H01L27/02 ,  H01L27/108 ,  H01L21/8234

CPC分类号： H01L28/91 ,  H01L27/0207 ,  H01L27/10817 ,  H01L27/10852 ,  H01L27/10894 ,  H01L29/66181

摘要： The invention includes semiconductor constructions, and also includes methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive storage node material within openings in an insulative material to form conductive containers. A retaining structure lattice is formed in physical contact with at least some of the containers, and subsequently the insulative material is removed to expose outer surfaces of the containers. The retaining structure can alleviate toppling or other loss of structural integrity of the container structures. The electrically conductive containers correspond to first capacitor electrodes. After the outer sidewalls of the containers are exposed, dielectric material is formed within the containers and along the exposed outer sidewalls. Subsequently, a second capacitor electrode is formed over the dielectric material. The first and second capacitor electrodes, together with the dielectric material, form a plurality of capacitor devices.

摘要翻译： 本发明包括半导体结构，并且还包括形成多个电容器器件的方法。 本发明的示例性方法包括在绝缘材料的开口内形成导电储存节点材料以形成导电容器。 形成与至少一些容器物理接触的保持结构格子，随后去除绝缘材料以露出容器的外表面。 保持结构可以减轻容器结构的结构完整性的倒塌或其它损失。 导电容器对应于第一电容器电极。 在容器的外侧壁暴露之后，电介质材料形成在容器内并沿外露的外侧壁。 随后，在电介质材料上形成第二电容器电极。 第一和第二电容器电极与电介质材料一起形成多个电容器器件。

公开(公告)号：US20050032346A1

公开(公告)日：2005-02-10

申请号：US10634163

申请日：2003-08-05

申请人： Thomas Graettinger

发明人： Thomas Graettinger

IPC分类号： H01L21/00 ,  H01L21/02 ,  H01L21/768 ,  H01L21/8242

CPC分类号： H01L28/91 ,  H01L21/7687 ,  H01L27/10852 ,  H01L27/10855 ,  H01L28/90

摘要： A process of making a stud capacitor structure is disclosed. The process includes embedding the stud in a dielectric stack. In one embodiment, the process includes forming an electrically conductive seed film in a contact corridor of the dielectric stack. A storage cell stud is also disclosed. The storage cell stud can be employed in a dynamic random-access memory device. An electrical system is also disclosed that includes the storage cell stud.

摘要翻译： 公开了一种制造双绞电容器结构的工艺。 该过程包括将柱嵌入电介质堆叠中。 在一个实施例中，该方法包括在电介质堆叠的接触走廊中形成导电种子膜。 还公开了存储单元柱。 存储单元螺柱可用于动态随机存取存储器件中。 还公开了一种包括存储单元螺柱的电气系统。

公开(公告)号：US20050026361A1

公开(公告)日：2005-02-03

申请号：US10628994

申请日：2003-07-28

申请人： Thomas Graettinger ,  Marsela Pontoh ,  Thomas Figura

发明人： Thomas Graettinger ,  Marsela Pontoh ,  Thomas Figura

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/8242 ,  H01L27/108

CPC分类号： H01L27/10852 ,  H01L27/10817 ,  H01L28/91

摘要： A method for forming a double sided container capacitor comprises forming a first capacitor top plate layer within a recess in a dielectric layer, then forming a first cell dielectric on the first top plate layer. Next, first and second bottom plate layers are formed on the first cell dielectric layer, and a second cell dielectric layer is formed on the second bottom plate layers. Finally, a second top plate layer is formed on the second cell dielectric layer, and the first and second top plate layers are electrically connected using a conductive plug or conductive spacer. An inventive structure formed using the inventive method is also described.

摘要翻译： 一种用于形成双面容器电容器的方法包括在电介质层的凹槽内形成第一电容器顶板层，然后在第一顶板层上形成第一单元电介质。 接下来，在第一单元电介质层上形成第一和第二底板层，在第二底板层上形成第二单元电介质层。 最后，在第二单元电介质层上形成第二顶板层，并且使用导电插塞或导电间隔件将第一和第二顶板层电连接。 还描述了使用本发明方法形成的本发明的结构。

公开(公告)号：US20070049037A1

公开(公告)日：2007-03-01

申请号：US11217905

申请日：2005-09-01

申请人： Thomas Graettinger ,  John Zahurak ,  Shane Trapp ,  Thomas Figura

发明人： Thomas Graettinger ,  John Zahurak ,  Shane Trapp ,  Thomas Figura

IPC分类号： H01B13/00 ,  H01L21/311 ,  B44C1/22

CPC分类号： H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76844 ,  H01L27/10852

摘要： This invention includes methods of forming openings into dielectric material. In one implementation, an opening is partially etched through dielectric material, with such opening comprising a lowest point and opposing sidewalls of the dielectric material. At least respective portions of the opposing sidewalls within the opening are lined with an electrically conductive material. With such electrically conductive material over said respective portions within the opening, plasma etching is conducted into and through the lowest point of the dielectric material of the opening to extend the opening deeper within the dielectric material. Other aspects and implementations are contemplated.

摘要翻译： 本发明包括在电介质材料中形成开口的方法。 在一个实施方案中，通过电介质材料部分蚀刻开口，其中这种开口包括介电材料的最低点和相对的侧壁。 开口内的相对侧壁的至少相应部分衬有导电材料。 通过在开口内的所述各个部分上的这种导电材料，等离子体蚀刻被导入并通过开口的电介质材料的最低点，以使电介质材料内的开口更深。 考虑了其他方面和实现。

公开(公告)号：US20070045693A1

公开(公告)日：2007-03-01

申请号：US11215243

申请日：2005-08-30

申请人： H. Manning ,  Thomas Graettinger

发明人： H. Manning ,  Thomas Graettinger

IPC分类号： H01L21/8244 ,  H01L29/94

CPC分类号： H01L27/10894 ,  H01L27/10817 ,  H01L27/10852 ,  H01L28/91 ,  H01L29/945 ,  Y10S257/906

摘要： The invention includes semiconductor constructions, and also includes methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive storage node material within openings in an insulative material to form conductive containers. A retaining structure lattice is formed in physical contact with at least some of the containers, and subsequently the insulative material is removed to expose outer surfaces of the containers. The retaining structure can alleviate toppling or other loss of structural integrity of the container structures. The electrically conductive containers correspond to first capacitor electrodes. After the outer sidewalls of the containers are exposed, dielectric material is formed within the containers and along the exposed outer sidewalls. Subsequently, a second capacitor electrode is formed over the dielectric material. The first and second capacitor electrodes, together with the dielectric material, form a plurality of capacitor devices.

摘要翻译： 本发明包括半导体结构，并且还包括形成多个电容器器件的方法。 本发明的示例性方法包括在绝缘材料的开口内形成导电储存节点材料以形成导电容器。 形成与至少一些容器物理接触的保持结构格子，随后去除绝缘材料以露出容器的外表面。 保持结构可以减轻容器结构的结构完整性的倒塌或其它损失。 导电容器对应于第一电容器电极。 在容器的外侧壁暴露之后，电介质材料形成在容器内并沿外露的外侧壁。 随后，在电介质材料上形成第二电容器电极。 第一和第二电容器电极与电介质材料一起形成多个电容器器件。

公开(公告)号：US20070001207A1

公开(公告)日：2007-01-04

申请号：US11517045

申请日：2006-09-07

申请人： Thomas Graettinger ,  Marsela Pontoh ,  Thomas Figura

发明人： Thomas Graettinger ,  Marsela Pontoh ,  Thomas Figura

IPC分类号： H01L29/94

CPC分类号： H01L27/10852 ,  H01L27/10817 ,  H01L28/91

摘要： A method for forming a double sided container capacitor comprises forming a first capacitor top plate layer within a recess in a dielectric layer, then forming a first cell dielectric on the first top plate layer. Next, first and second bottom plate layers are formed on the first cell dielectric layer, and a second cell dielectric layer is formed on the second bottom plate layers. Finally, a second top plate layer is formed on the second cell dielectric layer, and the first and second top plate layers are electrically connected using a conductive plug or conductive spacer. An inventive structure formed using the inventive method is also described.

摘要翻译： 一种用于形成双面容器电容器的方法包括在电介质层的凹槽内形成第一电容器顶板层，然后在第一顶板层上形成第一单元电介质。 接下来，在第一单元电介质层上形成第一和第二底板层，在第二底板层上形成第二单元电介质层。 最后，在第二单元电介质层上形成第二顶板层，并且使用导电插塞或导电间隔件将第一和第二顶板层电连接。 还描述了使用本发明方法形成的本发明的结构。

公开(公告)号：US20060120019A1

公开(公告)日：2006-06-08

申请号：US11326018

申请日：2006-01-05

申请人： F. Gealy ,  Thomas Graettinger

发明人： F. Gealy ,  Thomas Graettinger

IPC分类号： H01G4/228

CPC分类号： H01L28/90 ,  H01G4/33 ,  H01L23/5223 ,  H01L28/55 ,  H01L28/65 ,  H01L28/84 ,  H01L28/91 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of forming a capacitor are disclosed. The methods may comprise the steps of forming a substrate assembly and forming a first electrode on the substrate assembly. The first electrode may be formed to include at least one non-smooth surface and may be formed from a material selected from the group consisting of transition metals, conductive oxides, alloys thereof, and combinations thereof. The methods may also comprise the step of forming a dielectric on the first electrode and an uppermost surface of the substrate assembly, and forming a second electrode on the dielectric. The second electrode may be formed to include at least one non-smooth surface. Also, the dielectric and the second electrode may be formed only within the first electrode.

摘要翻译： 公开了形成电容器的方法。 该方法可以包括形成衬底组件并在衬底组件上形成第一电极的步骤。 第一电极可以形成为包括至少一个非光滑表面，并且可以由选自过渡金属，导电氧化物，其合金及其组合的材料形成。 所述方法还可以包括在所述第一电极和所述基板组件的最上表面上形成电介质的步骤，以及在所述电介质上形成第二电极。 第二电极可以形成为包括至少一个非光滑表面。 此外，电介质和第二电极可以仅形成在第一电极内。