公开(公告)号：US11251034B2

公开(公告)日：2022-02-15

申请号：US16281418

申请日：2019-02-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki Hayashi ,  Rui Kanemura ,  Satoshi Takagi ,  Mitsuhiro Okada

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/311 ,  H01L21/3205 ,  C23C16/02 ,  C23C16/24

Abstract: There is provided a film forming method comprising an organic substance removal step of removing an organic substance adhering to an oxide film generated on a surface of a base by supplying a hydrogen-containing gas and an oxygen-containing gas to the base; an oxide film removal step of removing the oxide film formed on the surface of the base after the organic substance removal step; and a film forming step of forming a predetermined film on the surface of the base after the oxide film removal step.

公开(公告)号：US11101131B2

公开(公告)日：2021-08-24

申请号：US16540347

申请日：2019-08-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Rui Kanemura ,  Hiroyuki Hayashi

IPC: H01L21/033 ,  C23C16/34 ,  H01L21/3213 ,  C23C16/56 ,  C23C16/458 ,  C23C16/40 ,  H01L21/3205

Abstract: A method of selectively forming a silicon film on an upper portion of each of protruded portions formed on a substrate, which includes: supplying a first silicon-containing gas to the substrate and forming a first silicon film so that a film thickness of the first silicon film becomes thicker in the upper portion rather than in a lower portion of a sidewall of each protruded portion; subsequently, supplying an etching gas to the substrate and removing the first silicon film on the sidewall of each protruded portion while leaving the first silicon film on an upper surface of each protruded portion; and subsequently, supplying a second silicon-containing gas to the substrate and forming a second silicon film so that a film thickness of the second silicon film becomes thicker in the upper portion rather than in the lower portion of a sidewall of each protruded portion.

公开(公告)号：US11866825B2

公开(公告)日：2024-01-09

申请号：US17295003

申请日：2019-11-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki Hayashi ,  Ryosaku Ota

IPC: H01L21/67 ,  C23C16/52 ,  C23C16/455 ,  H01J37/32 ,  H01L21/31

CPC classification number: C23C16/45561 ,  C23C16/52 ,  H01J37/32192 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32834 ,  H01J2237/3321 ,  H01L21/31

Abstract: An apparatus includes a venting mechanism for venting a treatment vessel, a gas supply path including an upstream flow path to which a gas is supplied from a gas source, and multiple branch paths formed by branching a downstream side of the upstream flow path into multiple paths, each branch path being connected to the treatment vessel. The apparatus further includes first valves respectively provided in the branch paths to divert the gas to the branch paths, each first valve having a variable opening degree without being closed completely, a second valve provided in the upstream flow path to supply the gas or shut off the supply of the gas to a downstream side thereof, a pressure sensor that detects a pressure in the treatment vessel, and an abnormality detector that detects an abnormality in the downstream side of the second valve based on the detected pressure.

公开(公告)号：US11239076B2

公开(公告)日：2022-02-01

申请号：US16815682

申请日：2020-03-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yutaka Motoyama ,  Hiroyuki Hayashi

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/3065

Abstract: A film forming method includes forming an amorphous semiconductor film on a recess, forming a first polycrystalline semiconductor film by performing heat treatment on the amorphous semiconductor film, and forming a second polycrystalline semiconductor film on the first polycrystalline semiconductor film formed by the heat treatment.

公开(公告)号：US11587787B2

公开(公告)日：2023-02-21

申请号：US17132656

申请日：2020-12-23

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro Takezawa ,  Daisuke Suzuki ,  Hiroyuki Hayashi ,  Yutaka Motoyama

IPC: H01L21/02 ,  H01L21/3065 ,  H01L21/306

Abstract: A film forming method includes: forming a laminated film, in which an interface layer, a bulk layer, and a surface layer are laminated in this order, on a base; and crystallizing the laminated film, wherein the bulk layer is formed of a film that is easier to crystallize than the interface layer in crystallizing the laminated film, and wherein the surface layer is formed of a film that is easier to crystallize than the bulk layer in crystallizing the laminated film.

公开(公告)号：US11211265B2

公开(公告)日：2021-12-28

申请号：US16379990

申请日：2019-04-10

Applicant: Tokyo Electron Limited

Inventor： Satoshi Takagi ,  Hiroyuki Hayashi ,  Hsiulin Tsai

IPC: F27B5/14 ,  F26B19/00 ,  H01L21/67 ,  C23C16/455

Abstract: A heat treatment apparatus includes a processing container that accommodates a plurality of substrates, a gas supply unit that supplies a raw material gas into the processing container, an exhaust unit that exhausts the raw material gas in the processing container, and a heating unit that heats the plurality of substrates. The gas supply unit includes a gas supply pipe including: a first straight pipe portion that extends upward along a longitudinal direction of an inner wall surface of the processing container; a bent portion where a distal end side that extends above the first straight pipe portion is bent downward; a second straight pipe portion that extends downward from the bent portion; and a plurality of gas ejecting holes formed on the second straight pipe portion. The first straight pipe portion has a larger cross-sectional area than the second straight pipe portion.