Abstract:
A substrate mounting table includes a plate shaped member provided with a mounting surface for mounting a substrate thereon, a plurality of gas injection openings opened on the mounting surface to supply a gas toward the mounting surface, and a gas supply channel for supplying the gas through the gas injection openings; and a thermally sprayed ceramic layer covering the mounting surface. At least inner wall portions of the gas supply channel are formed in curved surface shapes, the inner wall portions facing the gas injection openings.
Abstract:
A mounting apparatus for an object to be processed includes a mounting stage, on which an object to be processed is mounted inside a processing container, an edge ring disposed in a peripheral edge portion of the mounting stage, and a spring-like conductive member that includes a first spring-like member contacting the edge ring at a first recess formed in the edge ring, and a second spring-like member contacting the mounting stage at a second recess formed in the mounting stage.
Abstract:
There is provision of a plasma etching apparatus including a processing vessel capable of being evacuated, a lower electrode provided in the processing vessel that is configured to place a substrate, an upper electrode provided in the processing vessel arranged in parallel with the lower electrode so as to face each other, a process gas supply unit configured to supply process gas to a processing space between the upper electrode and the lower electrode, a high frequency power supply unit configured to supply high frequency electric power for generating plasma from process gas, a focus ring surrounding a periphery of the substrate, a direct current (DC) power source configured to output DC voltage applied to the focus ring, a heating unit configured to heat the focus ring, and a temperature measurement unit for measuring temperature of the focus ring.
Abstract:
A substrate support assembly on which a substrate is placed, includes a base, an electrostatic chuck disposed on the base, and an edge ring disposed in a periphery of the substrate. The edge ring is formed of a plurality of edge ring pieces that are segmented in a circumferential direction. The electrostatic chuck includes a substrate attraction part configured to attract the substrate, and an edge ring attraction part configured to attract the plurality of edge ring pieces. The edge ring attraction part includes a plurality of heat transfer gas grooves, supplied with a heat transfer gas, in a plurality of regions where the plurality of edge ring pieces are attracted, respectively.
Abstract:
In a substrate support according to one exemplary embodiment, an adhesive is provided between an upper surface of a base and a lower surface of the electrostatic chuck. The base, the adhesive, and the electrostatic chuck provide a supply path for supplying a heat transfer gas between the electrostatic chuck and a substrate. The upper surface of the base defines one or more grooves. The one or more grooves are further away from a center of the upper surface than the supply path. The adhesive is provided to cover an upper end opening of each of the one or more grooves. The heat transfer gas is capable of being supplied to the one or more grooves via the supply path or a different flow path. The substrate support further includes a pressure sensor to measure pressure in the one or more grooves.
Abstract:
A mounting table is provided. The mounting table includes an electrostatic chuck configured to mount thereon a target object and attract and hold the target object using an electrostatic force, and a gas supply line configured to supply a gas to a gap between the target object mounted on the electrostatic chuck and the electrostatic chuck via the electrostatic chuck. The mounting table further includes at least one irradiation unit configured to irradiate light having a predetermined wavelength to the gas flowing through the gas supply line or to the gas supplied to the gap between the target object and the electrostatic chuck to ionize the gas.
Abstract:
An air cylinder includes a cylinder, a piston rod, a piston, and a controller. The piston rod has one end disposed in the cylinder and the other end protruding from the cylinder. The piston is provided at the one end of the piston rod and moves the piston rod by moving in the cylinder. The controller supplies gas into one of a space, which is a space in the cylinder directed on the piston rod side with respect to the piston, and a space, which is a space in the cylinder opposite to the space with respect to the piston, and sucks gas from an interior of the other of the spaces.
Abstract:
A maintenance apparatus includes a case and a maintenance mechanism. The case includes an opening having a size corresponding to a second gate of a vacuum processing apparatus including a processing chamber having a first gate through which a substrate is loaded and unloaded and the second gate different from the first gate. The case is attachable to the second gate while maintaining airtightness. The maintenance mechanism is provided in the case and is configured to perform at least one of an operation of detaching a consumed part in the processing chamber through the opening, an operation of attaching a replacement part in the processing chamber and an operation of cleaning the processing chamber.
Abstract:
Disclosed is a plasma processing apparatus including: a first placing table including a placing surface configured to place thereon a workpiece serving as a plasma processing target, an outer peripheral surface, a heater provided on the placing surface, a power supply terminal provided on a back surface side opposite to the placing table, and a wiring provided on the outer peripheral surface so as to be enclosed in an insulator, the wiring being configured to connect the heater and the power supply terminal; and a second placing table provided along the outer peripheral surface of the first placing table and configured to place a focus ring thereon.
Abstract:
An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., −400 to −600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.