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    Solid-state imaging device having a reduced image lag
    12.
    发明授权
    Solid-state imaging device having a reduced image lag 失效
    具有减小的图像滞后的固态成像装置

    公开(公告)号：US4484210A

    公开(公告)日：1984-11-20

    申请号：US297759

    申请日：1981-08-31

    申请人： Hiromitsu Shiraki ,  Nobukazu Teranishi ,  Yasuo Ishihara

    发明人： Hiromitsu Shiraki ,  Nobukazu Teranishi ,  Yasuo Ishihara

    IPC分类号： H01L27/148 ,  H01L29/78 ,  H01L27/14 ,  H01L31/00

    CPC分类号： H01L27/14831

    摘要： A solid-state imaging device has a semiconductor substrate of one conductive type. A plurality of light-charge converter regions, of the opposite conductivity type, are formed in the semiconductor substrate. A charge-voltage converter region, formed in the semiconductor substrate, converts the electric charge produced by the light-charge converter regions into a voltage. At least one charge transfer section is formed in the semiconductor substrate for transferring the electric charge produced by the light-charge converter regions to the charge-voltage converter region. At least one charge transfer gate section is in the semiconductor substrate and has a gate electrode for controlling the timing of a transfer of the electric charges from the light-charge converter regions to the charge transfer section. Pulses are generated with a predetermined pulse potential and applied to the gate electrode in the charge transfer gate section. The predetermined pulse potential has the relationshipV.sub.B +2.phi..sub.FP

    摘要翻译： 固态成像装置具有一种导电类型的半导体衬底。 在半导体衬底中形成有相反导电类型的多个光电荷转换器区域。 形成在半导体基板中的电荷 - 电压转换器区域将由光电荷转换器区域产生的电荷转换为电压。 在半导体衬底中形成至少一个电荷转移部分，用于将由光电荷转换器区域产生的电荷转移到电荷 - 电压转换器区域。 至少一个电荷转移栅极部分在半导体衬底中并且具有用于控制电荷从光电荷转换器区域转移到电荷转移部分的定时的栅电极。 产生具有预定脉冲电位的脉冲并施加到电荷转移栅极部分中的栅电极。 预定脉冲电位具有关系VB + 2 phi FP

    Solid-state image sensor having micro-lenses arranged to collect light of which the incidence angle has been moderated by a transparent film disposed thereon
    13.
    发明授权
    Solid-state image sensor having micro-lenses arranged to collect light of which the incidence angle has been moderated by a transparent film disposed thereon 有权
    具有微透镜的固态图像传感器被布置成收集通过其上设置的透明膜调节入射角的光

    公开(公告)号：US07531782B2

    公开(公告)日：2009-05-12

    申请号：US11599353

    申请日：2006-11-15

    申请人： Hiroshi Sakoh ,  Masato Kobayashi ,  Nobukazu Teranishi

    发明人： Hiroshi Sakoh ,  Masato Kobayashi ,  Nobukazu Teranishi

    IPC分类号： H01L27/00

    CPC分类号： H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14806

    摘要： A solid-state image sensor includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses corresponding to the light-receiving elements, and has a flattening film formed on the plurality of the micro-lenses. At a center of the light-receiving area, the micro-lenses are placed in positions directly above corresponding photodiodes, and placed in positions which are progressively offset from positions directly above the corresponding photodiodes, towards a center of the light receiving area, as micro-lenses are located farther from the center of the light-receiving area.

    摘要翻译： 固态图像传感器包括布置在光接收区域中的多个光接收元件和对应于光接收元件的多个微透镜，并且具有形成在多个微接收元件上的平坦化膜， 镜头 在光接收区域的中心处，将微透镜放置在相应的光电二极管正上方的位置，并且放置在相应的光电二极管正上方的位置上，朝向光接收区域的中心逐渐偏移， 光源距离光接收区域的中心更远。

    Solid-state image sensor with transparent film on micro-lenses by which oblique light is refracted towards light receiving elements
    14.
    发明授权
    Solid-state image sensor with transparent film on micro-lenses by which oblique light is refracted towards light receiving elements 有权
    固态图像传感器在微透镜上具有透明膜，通过该透镜将倾斜光折射到光接收元件

    公开(公告)号：US07459665B2

    公开(公告)日：2008-12-02

    申请号：US11812613

    申请日：2007-06-20

    申请人： Hiroshi Sakoh ,  Masato Kobayashi ,  Nobukazu Teranishi

    发明人： Hiroshi Sakoh ,  Masato Kobayashi ,  Nobukazu Teranishi

    IPC分类号： H01L27/00

    CPC分类号： H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14806

    摘要： A solid-state image sensor includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses corresponding to the light-receiving elements, and has a flattening film formed on the plurality of the micro-lenses. At a center of the light-receiving area, the micro-lenses are placed in positions directly above corresponding photodiodes, and placed in positions which are progressively offset from positions directly above the corresponding photodiodes, towards a center of the light receiving area, as micro-lenses are located farther from the center of the light-receiving area.

    摘要翻译： 固态图像传感器包括布置在光接收区域中的多个光接收元件和对应于光接收元件的多个微透镜，并且具有形成在多个微接收元件上的平坦化膜， 镜头 在光接收区域的中心处，将微透镜放置在相应的光电二极管正上方的位置，并且放置在相应的光电二极管正上方的位置上，朝向光接收区域的中心逐渐偏移， 光源距离光接收区域的中心更远。

    Manufacturing method
    15.
    发明申请
    Manufacturing method 审中-公开
    制造方法

    公开(公告)号：US20060046497A1

    公开(公告)日：2006-03-02

    申请号：US11210117

    申请日：2005-08-24

    申请人： Nobukazu Teranishi

    发明人： Nobukazu Teranishi

    IPC分类号： H01L21/302 ,  G03C5/00 ,  H01L21/311

    CPC分类号： B81C1/00611 ,  B81C2201/0123

    摘要： A manufacturing method according to which surface unevenness of a workpiece on which microprocessing is performed such as a semiconductor substrate or a micromachine is readily flattened with a higher degree of flatness than the prior art even when depressions vary in depth, to thus facilitate the processing of the surface in a subsequent process. The manufacturing method includes the processes of applying a photosensitive resin 2 over the surface of a workpiece 1, exposing the applied resin using a grayscale mask 3 that corresponds to the surface shape of the resin, and developing the exposed resin and eliminating unhardened resin.

    摘要翻译： 一种制造方法，即使当凹陷在深度上变化时，其上执行微处理的工件的表面不均匀性如现有技术那样容易地以比现有技术更高的平坦度平坦化，从而便于加工 在后续过程中的表面。 制造方法包括在工件1的表面上涂布感光性树脂2的工序，使用与树脂的表面形状相对应的灰度掩模3曝光所施加的树脂，并显影露出的树脂并除去未硬化的树脂。

    Solid-state imaging device with film of low hydrogen permeability including openings
    16.
    发明授权
    Solid-state imaging device with film of low hydrogen permeability including openings 失效
    具有低透过率的薄膜的固态成像装置包括开口

    公开(公告)号：US6147390A

    公开(公告)日：2000-11-14

    申请号：US52306

    申请日：1998-03-31

    申请人： Takashi Nakano ,  Kohichi Arai ,  Nobukazu Teranishi ,  Nobuhiko Mutoh

    发明人： Takashi Nakano ,  Kohichi Arai ,  Nobukazu Teranishi ,  Nobuhiko Mutoh

    IPC分类号： H01L27/14 ,  H01L27/148 ,  H01L31/10 ,  H01L31/18 ,  H01L32/0216

    CPC分类号： H01L31/186 ,  H01L27/14806 ,  H01L31/1804 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

    摘要： A semiconductor substrate has a sensor disposed in a surface layer on an entrance surface thereof for receiving incident light, and an intermediate-refractive-index film is disposed on the entire entrance surface of the semiconductor substrate either directly or with an insulating film interposed therebetween. The intermediate-refractive-index film has a refractive index lower than the semiconductor substrate and a low hydrogen permeability. A thin film is disposed on an entrance surface of the intermediate-refractive-index film and having refractive index lower than the intermediate-refractive-index film, the thin film being permeable to hydrogen. The intermediate-refractive-index film serves as a reflection-resistant film. Reflections of incident light applied through the thin film and the reflection-resistant film to the sensor of the semiconductor substrate are suppressed. The intermediate-refractive-index film has a hole defined therein for passage of hydrogen therethrough upon hydrogen alloying. After the thin film is formed on the surface of the intermediate-refractive-index film, hydrogen passes through the hole in the intermediate-refractive-index film to reach the surface of the semiconductor substrate near the sensor upon hydrogen alloying.

    摘要翻译： 半导体基板具有设置在其入射面上的表面层中的传感器，用于接收入射光，并且中间折射率膜直接设置在半导体衬底的整个入射面上，或者设置在绝缘膜之间。 中间折射率膜的折射率低于半导体衬底，并且具有低的透氢性。 薄膜设置在中折射率膜的入射面上，折射率低于中折射率膜，该薄膜可透过氢气。 中等折射率膜用作抗反射膜。 抑制通过薄膜和抗反射膜施加到半导体基板的传感器的入射光的反射。 中间折射率膜在氢合金化时具有限定在其中的氢气通过的孔。 在中间折射率膜的表面上形成薄膜之后，氢通过中间折射率膜的孔，在氢合金化之后到达传感器附近的半导体衬底的表面。

    Titanium bolometer-type infrared detecting apparatus
    17.
    发明授权
    Titanium bolometer-type infrared detecting apparatus 失效
    钛辐射热式红外线检测仪

    公开(公告)号：US5698852A

    公开(公告)日：1997-12-16

    申请号：US514256

    申请日：1995-08-11

    申请人： Akio Tanaka ,  Nobukazu Teranishi

    发明人： Akio Tanaka ,  Nobukazu Teranishi

    IPC分类号： G01J1/02 ,  G01J1/44 ,  G01J5/20 ,  G01J5/22 ,  H01L35/32 ,  H01L37/02 ,  H01L31/08

    CPC分类号： G01J5/22

    摘要： In a bolometer-type infrared detecting apparatus, a bolometer and a MOS transistor are provided for one pixel. A source of the MOS transistor is connected to a power supply terminal. A drain of the MOS transistor is connected to the bolometer which is connected via a switch to an output terminal.

    摘要翻译： 在辐射热计式红外线检测装置中，为一个像素提供测辐射热计和MOS晶体管。 MOS晶体管的源极连接到电源端子。 MOS晶体管的漏极连接到通过开关连接到输出端子的测辐射热计。

    Solid-state color imaging apparatus having color filters with corrected transmission characteristics
    18.
    发明授权
    Solid-state color imaging apparatus having color filters with corrected transmission characteristics 失效
    具有校正传输特性的滤色片的固态彩色成像装置

    公开(公告)号：US4845548A

    公开(公告)日：1989-07-04

    申请号：US147604

    申请日：1988-01-22

    申请人： Akiyoshi Kohno ,  Nobukazu Teranishi

    发明人： Akiyoshi Kohno ,  Nobukazu Teranishi

    IPC分类号： H01L31/0216 ,  H04N9/04

    CPC分类号： H04N9/045 ,  H01L31/02162

    摘要： A solid-state color imaging apparatus having a plurality of picture elements for converting incident light to signal charges with the picture elements being arrayed regularly in both a horizontal direction and a vertical direction to form horizontal rows and vertical columns. First color filters are on the picture elements in odd numbered rows for providing modulation characteristics of color components and causing the picture elements in the odd numbered rows to generate a first color difference signal. Second color filters are on the picture elements in even numbered rows for providing modulation characteristics of color components and causing the picture elements in the even numbered rows to generate a second color difference signal. The first and second color difference signals are substantially zero when achromatic light is incident upon the picture elements or is picked up at a reference color temperature.

    摘要翻译： 一种固态彩色成像装置，具有用于将入射光转换为信号电荷的多个像素，其中图像元素在水平方向和垂直方向上规则地排列以形成水平行和垂直列。 第一滤色器位于奇数行的图像元件上，用于提供颜色分量的调制特性，并使奇数行中的图像元素产生第一色差信号。 第二滤色器位于偶数行的像素上，用于提供色彩分量的调制特性，并使偶数行中的像素产生第二色差信号。 第一和第二色差信号基本上为零，当非彩色光入射到像素上或者以参考色温被拾取时。

    Solid-state image sensor, manufacturing method for solid-state image sensor, and camera having plural color filters and dual transparent film
    19.
    发明授权
    Solid-state image sensor, manufacturing method for solid-state image sensor, and camera having plural color filters and dual transparent film 有权
    固态图像传感器，固态图像传感器的制造方法以及具有多个滤色器和双透明膜的照相机

    公开(公告)号：US07417214B2

    公开(公告)日：2008-08-26

    申请号：US11783702

    申请日：2007-04-11

    申请人： Hiroshi Sakoh ,  Masato Kobayashi ,  Nobukazu Teranishi

    发明人： Hiroshi Sakoh ,  Masato Kobayashi ,  Nobukazu Teranishi

    IPC分类号： H01L27/00

    CPC分类号： H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14806

    摘要： A solid-state image sensor includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses corresponding to the light-receiving elements, and has a flattening film formed on the plurality of the micro-lenses. At a center of the light-receiving area, the micro-lenses are placed in positions directly above corresponding photodiodes, and placed in positions which are progressively offset from positions directly above the corresponding photodiodes, towards a center of the light receiving area, as micro-lenses are located farther from the center of the light-receiving area.

    摘要翻译： 固态图像传感器包括布置在光接收区域中的多个光接收元件和对应于光接收元件的多个微透镜，并且具有形成在多个微接收元件上的平坦化膜， 镜头 在光接收区域的中心处，将微透镜放置在相应的光电二极管正上方的位置，并且放置在相应的光电二极管正上方的位置上，朝向光接收区域的中心逐渐偏移， 光源距离光接收区域的中心更远。