Silicon nitride sintered bodies and a method of producing the same
    14.
    发明授权
    Silicon nitride sintered bodies and a method of producing the same 失效
    氮化硅烧结体及其制造方法

    公开(公告)号:US4818733A

    公开(公告)日:1989-04-04

    申请号:US28724

    申请日:1987-03-23

    IPC分类号: C04B35/584 C04B35/58

    CPC分类号: C04B35/584

    摘要: A silicon nitride sintered body having high oxidation resistance and high-temperature strength is produced by starting from silicon nitride powder adjusted so as to have an oxygen content of 4.5-7.5 wt % as converted into SiO.sub.2. The sintered body has a molar ratio of metal ion (M) to oxygen ion (O) within a range of M:O=1.2.about.1:3 and contains no crystal of YSiO.sub.2 N form.

    摘要翻译: 通过从被调整为氧化物含量为4.5-7.5重量%的氮化硅粉末开始转化为SiO 2,制备具有高耐氧化性和高温强度的氮化硅烧结体。 该烧结体在M:O = 1.2DIFFERENCE 1:3的范围内具有金属离子(M)与氧离子(O)的摩尔比,并且不含YSiO2N晶体。

    Cleaning composition, method for producing semiconductor device, and cleaning method
    15.
    发明授权
    Cleaning composition, method for producing semiconductor device, and cleaning method 有权
    清洗组合物,半导体装置的制造方法以及清洗方法

    公开(公告)号:US08617417B2

    公开(公告)日:2013-12-31

    申请号:US13107199

    申请日:2011-05-13

    IPC分类号: C09K13/00

    摘要: Provided are a cleaning composition which is capable of inhibiting the metal of a semiconductor substrate from corrosion, and has an excellent removability of plasma etching residues and/or ashing residues on the semiconductor substrate, a method for producing a semiconductor device, and a cleaning method using the cleaning composition. The cleaning composition for removing plasma etching residues and/or ashing residues formed on a semiconductor substrate, and a preparation method and a cleaning method for a semiconductor device, using the cleaning composition, wherein the cleaning composition includes (Component a) water; (Component b) an amine compound; (Component c) hydroxylamine and/or a salt thereof; (Component d) a quaternary ammonium compound; (Component e) an organic acid; and (Component f) a water-soluble organic solvent; and has a pH of 6 to 9.

    摘要翻译: 本发明提供能够抑制半导体衬底的金属腐蚀并且具有优异的半导体衬底上的等离子体蚀刻残留物和/或灰化残留物的可除去性的清洁组合物,半导体器件的制造方法和清洁方法 使用清洁组合物。 用于除去形成在半导体衬底上的等离子体蚀刻残渣和/或灰化残留物的清洁组合物,以及使用该清洁组合物的半导体器件的制备方法和清洁方法,其中所述清洁组合物包含(组分a)水; (组分b)胺化合物; (组分c)羟胺和/或其盐; (组分d)季铵化合物; (组分e)有机酸; 和(组分f)水溶性有机溶剂; pH为6〜9。

    Apparatus and method for measuring concentrations of gas components
    19.
    发明授权
    Apparatus and method for measuring concentrations of gas components 失效
    用于测量气体组分浓度的装置和方法

    公开(公告)号:US5602326A

    公开(公告)日:1997-02-11

    申请号:US546542

    申请日:1995-10-20

    摘要: A metal oxide semiconductor element is arranged in a measuring chamber in which an atmosphere is introduced. A resistance of the metal oxide semiconductor element is varied corresponding to a concentration of a specific gas component. An oxygen pump, having a solid-electrolyte element with an oxygen ion transmitting property and a pair of electrodes arranged on both sides of the solid-electrolyte element, is provided. One electrode of the oxygen pump is arranged in the measuring chamber. The measuring chamber is communicated with the atmosphere through a hole as a gas diffusion resistant means. A resistance of the metal oxide semiconductor element is measured when the metal oxide semiconductor element is exposed in the atmosphere so as to obtain a concentration of a specific gas component, while an oxygen partial pressure in the measuring chamber is controlled by the oxygen pump.

    摘要翻译: 金属氧化物半导体元件布置在其中引入气氛的测量室中。 金属氧化物半导体元件的电阻根据特定气体成分的浓度而变化。 提供了具有氧离子透过性的固体电解质元件和布置在固体电解质元件两侧的一对电极的氧气泵。 氧气泵的一个电极设置在测量室中。 测量室通过作为气体扩散阻挡装置的孔与大气连通。 当金属氧化物半导体元件在大气中暴露以获得特定气体成分的浓度,同时测量室中的氧分压由氧气泵控制​​时,测量金属氧化物半导体元件的电阻。