公开(公告)号：US20120205700A1

公开(公告)日：2012-08-16

申请号：US13367833

申请日：2012-02-07

申请人： Yoshifumi Tanada ,  Naoya Sakamoto ,  Hiroki Adachi ,  Shingo Eguchi ,  Koji Ono ,  Kensuke Yoshizumi ,  Hiroto Shinoda

发明人： Yoshifumi Tanada ,  Naoya Sakamoto ,  Hiroki Adachi ,  Shingo Eguchi ,  Koji Ono ,  Kensuke Yoshizumi ,  Hiroto Shinoda

IPC分类号： H01L51/52 ,  H01L51/56

CPC分类号： H01L51/5212 ,  H01L27/3279 ,  H01L51/5228 ,  H01L2251/5361

摘要： The present invention focuses on a structure in which an auxiliary wiring for increasing the conductivity of an upper electrode is provided on the substrate side. The conductive auxiliary wiring of a light-emitting device is provided over a substrate, and an upper portion of the auxiliary wiring protrudes in a direction parallel to the substrate. Further, an EL layer formed in a region including a lower electrode layer and the auxiliary wiring is physically divided by the auxiliary wiring. An upper electrode layer formed in a manner similar to that of the lower electrode layer may be electrically connected to at least part of a side surface of the auxiliary wiring. Such an auxiliary wiring may be used in a lighting device and a display device.

摘要翻译： 本发明的重点是在基板侧设置用于提高上部电极的导电性的辅助布线的结构。 发光装置的导电性辅助布线设置在基板上，辅助配线的上部沿与基板平行的方向突出。 此外，在包括下电极层和辅助布线的区域中形成的EL层在物理上被辅助布线分开。 以类似于下电极层的方式形成的上电极层可以电连接到辅助布线的侧表面的至少一部分。 这种辅助布线可以用在照明装置和显示装置中。

公开(公告)号：US08053339B2

公开(公告)日：2011-11-08

申请号：US12124385

申请日：2008-05-21

申请人： Shunpei Yamazaki ,  Hideomi Suzawa ,  Yoshihiro Kusuyama ,  Koji Ono ,  Jun Koyama

发明人： Shunpei Yamazaki ,  Hideomi Suzawa ,  Yoshihiro Kusuyama ,  Koji Ono ,  Jun Koyama

IPC分类号： H01L21/20

CPC分类号： H01L21/4846 ,  G02F1/13454 ,  G02F1/13458 ,  G02F1/136286 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L21/02367 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1277 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78621 ,  H01L29/78627

摘要： There are provided a structure of a semiconductor device in which low power consumption is realized even in a case where a size of a display region is increased to be a large size screen and a manufacturing method thereof. A gate electrode in a pixel portion is formed as a three layered structure of a material film containing mainly W, a material film containing mainly Al, and a material film containing mainly Ti to reduce a wiring resistance. A wiring is etched using an IPC etching apparatus. The gate electrode has a taper shape and the width of a region which becomes the taper shape is set to be 1 μm or more.

摘要翻译： 提供了即使在将显示区域的尺寸增加到大尺寸屏幕的情况下也实现低功耗的半导体器件的结构及其制造方法。 像素部分中的栅电极形成为主要包含W的材料膜，主要包含Al的材料膜和主要包含Ti的材料膜以降低布线电阻的三层结构。 使用IPC蚀刻装置蚀刻布线。 栅电极为锥形，成为锥形的区域的宽度为1μm以上。

公开(公告)号：US07884369B2

公开(公告)日：2011-02-08

申请号：US11525016

申请日：2006-09-22

申请人： Shunpei Yamazaki ,  Hideomi Suzawa ,  Koji Ono ,  Yoshihiro Kusuyama

发明人： Shunpei Yamazaki ,  Hideomi Suzawa ,  Koji Ono ,  Yoshihiro Kusuyama

IPC分类号： H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036

CPC分类号： H01L29/4908 ,  G02F2001/13629 ,  H01L23/5283 ,  H01L23/53223 ,  H01L27/3241 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78645 ,  H01L29/78648 ,  H01L51/5203 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/3011 ,  H01L2924/00

摘要： The wiring of the present invention has a layered structure that includes a first conductive layer (first layer) having a first width and made of one or a plurality of kinds of elements selected from W and Mo, or an alloy or compound mainly containing the element, a low-resistant second conductive layer (second layer) having a second width smaller than the first width, and made of an alloy or a compound mainly containing Al, and a third conductive layer (third layer) having a third width smaller than the second width, and made of an alloy or compound mainly containing Ti. With this constitution, the present invention is fully ready for enlargement of a pixel portion. At least edges of the second conductive layer have a taper-shaped cross-section. Because of this shape, satisfactory coverage can be obtained.

摘要翻译： 本发明的布线具有层状结构，其包括具有第一宽度的第一导电层（第一层），并且由选自W和Mo的一种或多种元素制成，或者主要包含元素的合金或化合物 ，具有小于第一宽度的第二宽度的低电阻的第二导电层（第二层），并且由主要包含Al的合金或化合物制成，以及具有小于第三宽度的第三宽度的第三导电层（第三层） 第二宽度，由主要含有Ti的合金或化合物制成。 利用这种结构，本发明完全准备好用于像素部分的放大。 第二导电层的至少边缘具有锥形横截面。 由于这种形状，可以获得令人满意的覆盖。

公开(公告)号：US07804142B2

公开(公告)日：2010-09-28

申请号：US11743189

申请日：2007-05-02

申请人： Shunpei Yamazaki ,  Hideomi Suzawa ,  Koji Ono ,  Yoshihiro Kusuyama

发明人： Shunpei Yamazaki ,  Hideomi Suzawa ,  Koji Ono ,  Yoshihiro Kusuyama

IPC分类号： H01L29/76

CPC分类号： H01L27/1296 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/32136 ,  H01L21/32139 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L2029/7863

摘要： For forming a gate electrode, a conductive film with low resistance including Al or a material containing Al as its main component and a conductive film with low contact resistance for preventing diffusion of Al into a semiconductor layer are laminated, and the gate electrode is fabricated by using an apparatus which is capable of performing etching treatment at high speed.

摘要翻译： 为了形成栅电极，层叠具有低电阻的包含Al或以Al为主要成分的材料的导电膜和用于防止Al扩散到半导体层中的具有低接触电阻的导电膜，并且栅电极由 使用能够高速进行蚀刻处理的装置。

公开(公告)号：US07560734B2

公开(公告)日：2009-07-14

申请号：US11305212

申请日：2005-12-19

申请人： Koji Ono ,  Hideomi Suzawa ,  Tatsuya Arao

发明人： Koji Ono ,  Hideomi Suzawa ,  Tatsuya Arao

IPC分类号： H01L27/14

CPC分类号： H01L27/1222 ,  G02F1/13624 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L33/08 ,  H01L33/62 ,  H01L2029/7863 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a semiconductor device, typically an active matrix display device, the structure of TFTs arranged in the respective circuits are made suitable in accordance with the function of the circuit, and along with improving the operating characteristics and the reliability of the semiconductor device, the manufacturing cost is reduced and the yield is increased by reducing the number of process steps. A semiconductor device has a semiconductor layer, an insulating film formed contacting the semiconductor layer, and a gate electrode having a tapered portion on the insulating film, in the semiconductor device, the semiconductor layer has a channel forming region, a first impurity region for forming a source region or a drain region and containing a single conductivity type impurity element, and a second impurity region for forming an LDD region contacting the channel forming region, a portion of the second impurity region is formed overlapping a gate electrode, and the concentration of the single conductivity type impurity element contained in the second impurity region becomes larger with distance from the channel forming region.

摘要翻译： 在半导体器件（通常为有源矩阵显示器件）中，根据电路的功能，布置在各个电路中的TFT的结构是合适的，并且随着半导体器件的工作特性和可靠性的提高，制造 降低成本，并通过减少工艺步骤的数量来提高产量。 半导体器件具有半导体层，与半导体层接触形成的绝缘膜和在绝缘膜上具有锥形部分的栅电极，在半导体器件中，半导体层具有沟道形成区，形成第一杂质区 源极区域或漏极区域，并且包含单一导电型杂质元素，以及用于形成与沟道形成区域接触的LDD区域的第二杂质区域，第二杂质区域的一部分与栅电极重叠，并且浓度 包含在第二杂质区域中的单一导电型杂质元素随着与沟道形成区域的距离而变大。

公开(公告)号：US07422934B2

公开(公告)日：2008-09-09

申请号：US11465360

申请日：2006-08-17

申请人： Shunpei Yamazaki ,  Hideomi Suzawa ,  Koji Ono ,  Toru Takayama

发明人： Shunpei Yamazaki ,  Hideomi Suzawa ,  Koji Ono ,  Toru Takayama

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L29/4908 ,  H01L27/124 ,  H01L27/1288 ,  H01L27/32 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3262 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/78621 ,  H01L51/5284 ,  H01L2029/7863

摘要： There is provided an inexpensive light emitting device and an electronic instrument using the same. In this invention, photolithography steps relating to manufacture of a transistor are reduced, so that the yield of the light emitting device is improved and the manufacturing period thereof is shortened. A feature is that a gate electrode is formed of conductive films of plural layers, and by using the selection ratio of those at the time of etching, the concentration of an impurity region formed in an active layer is adjusted.

摘要翻译： 提供了廉价的发光装置和使用它的电子仪器。 在本发明中，与晶体管的制造有关的光刻步骤减少，从而提高了发光器件的产量，并缩短了其制造周期。 特征在于，栅电极由多层导电膜形成，通过使用蚀刻时的选择比，调节在有源层中形成的杂质区域的浓度。

公开(公告)号：US20080179674A1

公开(公告)日：2008-07-31

申请号：US11976171

申请日：2007-10-22

申请人： Hideomi Suzawa ,  Koji Ono ,  Hideto Ohnuma ,  Hirokazu Yamagata ,  Shunpei Yamazaki

发明人： Hideomi Suzawa ,  Koji Ono ,  Hideto Ohnuma ,  Hirokazu Yamagata ,  Shunpei Yamazaki

IPC分类号： H01L27/12

CPC分类号： G02F1/13454 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78633 ,  H01L29/78645 ,  H01L2029/7863

摘要： TFTs arranged in various circuits have structures that are suited for circuit functions, in order to improve operation characteristics and reliability of the semiconductor device, to lower consumption of electric power, to decrease the number of steps, to lower the cost of production and to improve the yield. The gradient of concentration of impurity element for controlling the conduction type in the LDD regions 622 and 623 of the TFT is such that the concentration increases toward the drain region. For this purpose, a tapered gate electrode 607 and a tapered gate-insulating film 605 are formed, and the ionized impurity element for controlling the conduction type is added to the semiconductor layer through the gate-insulating film 605.

摘要翻译： 布置在各种电路中的TFT具有适于电路功能的结构，以便提高半导体器件的操作特性和可靠性，降低电力消耗，减少步骤数量，降低生产成本和改善 产量。 用于控制TFT的LDD区域622和623中的导电类型的杂质元素的浓度梯度使得浓度朝着漏极区增加。 为此，形成锥形栅电极607和锥形栅极绝缘膜605，并且用于控制导电类型的电离杂质元件通过栅极绝缘膜605添加到半导体层。

公开(公告)号：US20070246777A1

公开(公告)日：2007-10-25

申请号：US11469768

申请日：2006-09-01

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Hideomi Suzawa ,  Koji Ono ,  Tatsuya Arao

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Hideomi Suzawa ,  Koji Ono ,  Tatsuya Arao

IPC分类号： H01L27/12

CPC分类号： H01L27/1222 ,  G02F1/13454 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78621 ,  H01L2029/7863

摘要： A high reliability semiconductor display device is provided. A semiconductor layer in the semiconductor display device has a channel forming region, an LDD region, a source region, and a drain region, and the LDD region overlaps a first gate electrode, sandwiching a gate insulating film.

摘要翻译： 提供了一种高可靠性的半导体显示装置。 半导体显示装置中的半导体层具有沟道形成区域，LDD区域，源极区域和漏极区域，并且LDD区域与第一栅极电极重叠，夹着栅极绝缘膜。

公开(公告)号：US07218361B2

公开(公告)日：2007-05-15

申请号：US09809646

申请日：2001-03-16

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Hideomi Suzawa ,  Koji Ono ,  Tatsuya Arao

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Hideomi Suzawa ,  Koji Ono ,  Tatsuya Arao

IPC分类号： G02F1/136

CPC分类号： H01L27/1214 ,  G02F1/13454 ,  G02F1/1368 ,  H01L27/124 ,  H01L27/127

摘要： A highly reliable semiconductor display device is provided. The semiconductor display device has a channel forming region, an LDD region, and a source region and a drain region in a semiconductor layer, and the LDD region overlaps with a first gate electrode, sandwiching a gate insulating film.

摘要翻译： 提供了高度可靠的半导体显示装置。 半导体显示装置在半导体层中具有沟道形成区域，LDD区域，源极区域和漏极区域，并且LDD区域与第一栅极电极重叠，夹着栅极绝缘膜。

公开(公告)号：US07190114B2

公开(公告)日：2007-03-13

申请号：US11120852

申请日：2005-05-03

申请人： Hirokazu Yamagata ,  Hisao Ikeda ,  Yoshimi Adachi ,  Noriko Miyagi ,  Tatsuya Arao ,  Koji Ono

发明人： Hirokazu Yamagata ,  Hisao Ikeda ,  Yoshimi Adachi ,  Noriko Miyagi ,  Tatsuya Arao ,  Koji Ono

IPC分类号： H01L27/32 ,  H01L51/00

CPC分类号： H01L27/3246 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3258 ,  H01L51/5206 ,  H01L51/5253

摘要： A light emitting display device comprises a thin film transistor formed over a substrate, a first insulating film comprising an organic material and formed over the thin film transistor, a second insulating film comprising at least one material selected from the group consisting of aluminum nitride, aluminum nitride oxide, and aluminum oxynitride formed over the first insulating film, an anode formed in contact with the second insulating film, a light emitting layer formed over the anode, and a cathode formed over the light emitting layer.

摘要翻译： 发光显示装置包括形成在基板上的薄膜晶体管，包含有机材料并形成在薄膜晶体管上的第一绝缘膜，第二绝缘膜，包括选自氮化铝，铝 形成在第一绝缘膜上的氮氧化物和氧氮化铝，形成在第二绝缘膜上的阳极，形成在阳极上的发光层，以及形成在发光层上的阴极。