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    Microlithography projection objective and projection exposure apparatus
    11.
    发明授权
    Microlithography projection objective and projection exposure apparatus 失效
    微光投影物镜和投影曝光装置

    公开(公告)号：US06495839B1

    公开(公告)日：2002-12-17

    申请号：US09523297

    申请日：2000-03-10

    Applicant: Udo Dinger

    Inventor： Udo Dinger

    IPC: G21K500

    CPC classification number: G03F7/70233 ,  G02B17/0657

    Abstract: The invention is concerned with a microlithography projection objective device for short wavelength microlithography, preferably

    Abstract translation: 本发明涉及一种用于短波微光刻的微光刻投影物镜装置，优选<100nm，第一镜（S1），第二镜（S2），第三镜（S3），第四镜（S4）和 第五镜（S5）。 本发明的特征在于，图像侧数值孔径（NA）大于或等于0.10，并且最接近被照射物体的反射镜（优选晶片）的布置方式使得图像 - 至少与最接近晶片的反射镜的使用直径（D）相对应; 图像侧光学自由工作距离至少为最接近晶片的反射镜的使用直径（D）的三分之一和位于20mm和30mm之间的长度的总和; 和/或图像侧光学自由工作距离为至少50mm，优选为60mm。

    Projection system for EUV lithography
    12.
    再颁专利
    Projection system for EUV lithography 有权
    EUV光刻投影系统

    公开(公告)号：USRE42118E1

    公开(公告)日：2011-02-08

    申请号：US11981511

    申请日：2007-10-31

    Applicant: Russell Hudyma ,  Hans-Jûrgen Mann ,  Udo Dinger

    Inventor： Russell Hudyma ,  Hans-Jûrgen Mann ,  Udo Dinger

    IPC: G03B27/54 ,  G03B27/42

    CPC classification number: G03F7/70233 ,  G02B17/0657 ,  G03F7/70275

    Abstract: An EUV optical projection system includes at least six reflecting surfaces for imaging an object (OB) on an image (IM). The system is preferably configured to form an intermediate image (IMI) along an optical path from the object (OB) to the image (IM) between a secondary mirror (M2) and a tertiary mirror (M3), such that a primary mirror (M1) and the secondary mirror (M2) form a first optical group (G1) and the tertiary mirror (M3), a fourth mirror (M4), a fifth mirror (M5) and a sixth mirror (M6) form a second optical group (G2). The system also preferably includes an aperture stop (APE) located along the optical path from the object (OB) to the image (IM) between the primary mirror (M1) and the secondary mirror (M2). The secondary mirror (M2) is preferably concave, and the tertiary mirror (M3) is preferably convex. Each of the six reflecting surfaces preferably receives a chief ray (CR) from a central field point at an incidence angle of less than substantially 15°. The system preferably has a numerical aperture greater than 0.18 at the image (IM). The system is preferably configured such that a chief ray (CR) converges toward the optical axis (OA) while propagating between the secondary mirror (M2) and the tertiary mirror (M3).

    Abstract translation: EUV光学投影系统包括用于对图像（IM）上的物体（OB）进行成像的至少六个反射表面。 该系统优选地被配置成沿着从物体（OB）到次级反射镜（M2）和第三反射镜（M3）之间的图像（IM）的光路形成中间图像（IMI），使得主反射镜 M1）和副镜（M2）形成第一光学组（G1），第三反射镜（M3），第四反射镜（M4），第五反射镜（M5）和第六反射镜（M6）形成第二光学组 （G2）。 该系统还优选地包括沿着从物体（OB）到主镜（M1）和副镜（M2）之间的图像（IM）的光路定位的孔径光阑（APE）。 副镜（M2）优选为凹面，第三反射镜（M3）优选为凸面。 六个反射表面中的每一个优选地以小于大约15°的入射角从中心场点接收主光线（CR）。 该系统优选地在图像（IM）处具有大于0.18的数值孔径。 优选地，该系统被配置为使得主光线（CR）在副反射镜（M2）和第三反射镜（M3）之间传播的同时朝向光轴（OA）会聚。

    COLLECTOR FOR AN ILLUMINATION SYSTEM
    16.
    发明申请
    COLLECTOR FOR AN ILLUMINATION SYSTEM 有权
    收集器用于照明系统

    公开(公告)号：US20080018876A1

    公开(公告)日：2008-01-24

    申请号：US11781010

    申请日：2007-07-20

    Applicant: Ralf Stuetzle ,  Udo Dinger

    Inventor： Ralf Stuetzle ,  Udo Dinger

    IPC: G03B27/54 ,  G02B19/00

    CPC classification number: G21K1/06 ,  B82Y10/00 ,  G02B2207/123 ,  G03F7/70166

    Abstract: Collectors with mirror shells arranged inside each other, illumination systems equipped with such collectors, projection exposure apparatuses equipped with such illumination systems, methods of manufacturing microelectronic components with such projection exposure apparatuses, and related systems, components and methods are disclosed.

    Abstract translation: 公开了具有彼此布置的具有镜壳的收集器，配备有这种收集器的照明系统，配备有这种照明系统的投影曝光装置，具有这种投影曝光装置的微电子部件的制造方法以及相关系统，部件和方法。

    Method of manufacturing an optical element
    18.
    发明授权
    Method of manufacturing an optical element 有权
    制造光学元件的方法

    公开(公告)号：US07118449B1

    公开(公告)日：2006-10-10

    申请号：US10943952

    申请日：2004-09-20

    Applicant: Udo Dinger ,  Frank Eisert ,  Siegfried Stacklies ,  Martin Weiser ,  Guenther Seitz

    Inventor： Udo Dinger ,  Frank Eisert ,  Siegfried Stacklies ,  Martin Weiser ,  Guenther Seitz

    IPC: B24B49/00 ,  B24B51/00 ,  B24B1/00

    CPC classification number: B24B13/06 ,  B24B51/00

    Abstract: A method of manufacturing an optical element having an optical surface extending close to a periphery of a substrate comprises: providing a substrate having a main surface extending beyond a periphery of the optical surface and also performing a polishing of the optical surface in regions of the main surface extending beyond the optical surface. Thereafter, material of the substrate carrying a portion of the surface extending beyond the optical surface is removed.

    Abstract translation: 一种制造具有靠近基板周边延伸的光学表面的光学元件的方法包括：提供具有延伸超过光学表面的周边的主表面的基板，并且还在主体的区域中执行光学表面的抛光 表面延伸超出光学表面。 此后，去除承载延伸超过光学表面的表面的一部分的基板的材料。

    Reduction objective for extreme ultraviolet lithography
    19.
    发明授权
    Reduction objective for extreme ultraviolet lithography 有权
    极光紫外光刻的减量目标

    公开(公告)号：US06577443B2

    公开(公告)日：2003-06-10

    申请号：US09878697

    申请日：2001-06-11

    Applicant: Udo Dinger ,  Hans-Jürgen Mann

    Inventor： Udo Dinger ,  Hans-Jürgen Mann

    IPC: G02B510

    CPC classification number: G03F7/70358 ,  G02B17/0663 ,  G03F7/70233 ,  Y10S359/90

    Abstract: A reduction objective, a projection exposure apparatus with a reduction objective, and a method of use thereof are disclosed. The reduction objective has a first set of multilayer mirrors in centered arrangement with respect to a first optical axis, a second set of multilayer mirrors in centered arrangement with respect to a second optical axis, and an additional mirror disposed at grazing incidence, such that said additional mirror defines an angle between the first optical axis and said second optical axis. The reduction objective has an imaging reduction scale of approximately 4× for use in soft X-ray, i.e., EUV and UV, annular field projection applications, such as lithography

    Abstract translation: 公开了一种还原目标，具有还原目标的投影曝光装置及其使用方法。 还原物镜具有相对于第一光轴居中布置的第一组多层反射镜，相对于第二光轴居中布置的第二组多层反射镜，以及放置在入射处的附加镜，使得所述多层反射镜 另外的反射镜限定了第一光轴和所述第二光轴之间的角度。 还原目标具有用于软X射线（即EUV和UV）环形场投影应用中的大约4x的成像缩小比例，例如光刻

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