公开(公告)号：US20230060609A1

公开(公告)日：2023-03-02

申请号：US17462990

申请日：2021-08-31

Applicant: Veeco Instruments Inc.

Inventor： Sandeep Krishnan ,  Bojan Mitrovic ,  Eric A. Armour ,  Yuliy Rashkovsky ,  Robert S. Maxwell, IV ,  Matthew J. Van Doren

IPC: H01L21/677 ,  H01L21/205 ,  H01L21/687 ,  C23C16/46

Abstract: A wafer carrier assembly as described herein improves thermal control across a top surface thereof to maintain highly controlled deposition locations and thicknesses.

公开(公告)号：US20200063287A1

公开(公告)日：2020-02-27

申请号：US16107668

申请日：2018-08-21

Applicant: Veeco Instruments Inc.

Inventor： Bojan Mitrovic ,  Yuliy Rashkovsky ,  Eric Armour

IPC: C30B25/12 ,  H01L21/677 ,  H01L21/687 ,  H01L21/02 ,  C30B25/16 ,  C30B25/10

Abstract: A wafer carrier has a plurality of built-up pockets connected by raised interstitial spaces on a base. Top cover plates are affixed to the base by fasteners and separated from direct thermal contact b302y spacers.

公开(公告)号：US20200056284A1

公开(公告)日：2020-02-20

申请号：US15999697

申请日：2018-08-20

Applicant: Veeco Instruments Inc.

Inventor： Bojan Mitrovic ,  Yuliy Rashkovsky ,  Eric Armour

IPC: C23C16/458 ,  H01L21/687

Abstract: A wafer carrier has a plurality of built-up pockets connected by raised interstitial spaces on a base. Top cover plates are affixed to the base by fasteners and separated from direct thermal contact by spacers.

公开(公告)号：US09053935B2

公开(公告)日：2015-06-09

申请号：US14533650

申请日：2014-11-05

Applicant: Veeco Instruments Inc.

Inventor： Alexander I. Gurary ,  Mikhail Belousov ,  Bojan Mitrovic

IPC: H01L21/20 ,  H01L21/36 ,  H01L21/00 ,  H01L21/26 ,  H01L21/42 ,  H01L21/302 ,  H01L21/461 ,  H01L21/31 ,  H01L21/469 ,  H01L21/02 ,  H01L21/205

CPC classification number: H01L21/02538 ,  C23C16/301 ,  C23C16/45504 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/45587 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/46 ,  H01L21/0262

Abstract: A chemical vapor deposition reactor and method. Reactive gases, such as gases including a Group III metal source and a Group V metal source, are introduced into the chamber (10) of a rotating-disc reactor and directed downwardly onto a wafer carrier (32) and substrates (40) which are maintained at an elevated substrate temperature, typically above about 400° C. and normally about 700-1100° C. to deposit a compound such as a III-V semiconductor. The gases are introduced into the reactor at an inlet temperature desirably above about 75° C. and most preferably about 100°-350° C. The walls of the reactor may be at a temperature close to the inlet temperature. Use of an elevated inlet temperature allows the use of a lower rate of rotation of the wafer carrier, a higher operating pressure, lower flow rate, or some combination of these.

公开(公告)号：US20240175132A1

公开(公告)日：2024-05-30

申请号：US18519476

申请日：2023-11-27

Applicant: VEECO INSTRUMENTS INC.

Inventor： Ajit Paranjpe ,  Alexander Gurary ,  Bojan Mitrovic

IPC: C23C16/458 ,  C23C16/448 ,  C23C16/455

CPC classification number: C23C16/4584 ,  C23C16/4481 ,  C23C16/455

Abstract: A multi-wafer metal organic chemical vapor deposition system in which adjacent wafers positioned within the system rotate about their own axes, including a reaction chamber comprising an exhaust system including a peripheral port, a multi-wafer carrier comprising a wafer carrier body and a plurality of wafer carrier discs supported within the wafer carrier body, wherein adjacent wafer carrier discs of the plurality wafer carrier discs are configured and the wafer carrier body are configured to rotate at different speeds, a multi-zone injection block positioned over the wafer carrier body, a central gas port positioned in the center of the wafer carrier body functions as a gas exhaust, and a multi-zone heater assembly positioned beneath the multi-wafer carrier.

公开(公告)号：US20210095374A1

公开(公告)日：2021-04-01

申请号：US16868082

申请日：2020-05-06

Applicant: Veeco Instruments, Inc.

Inventor： Sandeep Krishnan ,  Bojan Mitrovic ,  Mandar Deshpande ,  Alexander Gurary ,  Aniruddha Bagchi

IPC: C23C16/458 ,  C30B25/12

Abstract: A self-centering substrate carrier system for a chemical vapor deposition reactor includes a substrate carrier chosen to at least partially support a wafer for CVD processing and that comprises a beveled surface. A rotating tube comprising a beveled surface that matches the beveled surface of the substrate carrier, where a shape and dimensions of a cross section of the substrate carrier are chosen such that a center of mass of the substrate carrier is positioned a distance that is below a plane of contact defined by where a rim of substrate carrier contacts a rim of the rotating tube.

公开(公告)号：US10570510B2

公开(公告)日：2020-02-25

申请号：US15448019

申请日：2017-03-02

Applicant: Veeco Instruments Inc.

Inventor： Bojan Mitrovic ,  Eric Armour ,  Ian Kunsch

IPC: C23C16/44 ,  C23C16/455 ,  H01L21/687 ,  C23C16/458 ,  H01L21/02

Abstract: An arrangement of two shutters radially outward from an injector block and a susceptor onto which a wafer carrier is removably mounted are configured to provide a flowpath through a reactor chamber that does not exhibit a vortex, thereby reducing or eliminating buildup on the inside of the reactor chamber and facilitating large temperature gradient between the injector block and the wafer carrier. This can be accomplished by introduction of a purge gas flow at a radially inner wall of an upper shutter, and in some embodiments the purge gas can have a different chemical composition than the precursor gas used to grow desired epitaxial structures on the wafer carrier.

公开(公告)号：US20180320289A1

公开(公告)日：2018-11-08

申请号：US16026826

申请日：2018-07-03

Applicant: Veeco Instruments Inc.

Inventor： Mikhail Belousov ,  Bojan Mitrovic ,  Keng Moy

IPC: C30B25/14 ,  C23C16/458 ,  C23C16/455

CPC classification number: C30B25/14 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/4584

Abstract: A flow inlet element for a chemical vapor deposition reactor is formed from a plurality of elongated tubular elements extending side-by-side with one another in a plane transverse to the upstream to downstream direction of the reactor. The tubular elements have inlets for ejecting gas in the downstream direction. A wafer carrier rotates around an upstream to downstream axis. The gas distribution elements may provide a pattern of gas distribution which is asymmetrical with respect to a medial plane extending through the axis.

公开(公告)号：US20180230596A1

公开(公告)日：2018-08-16

申请号：US15947352

申请日：2018-04-06

Applicant: Veeco Instruments Inc.

Inventor： Bojan Mitrovic ,  Guanghua Wei ,  Eric A. Armour ,  Ajit Paranjpe

IPC: C23C16/458 ,  C23C16/455 ,  H01L21/687 ,  H01L21/02 ,  C30B29/06 ,  C30B25/16 ,  C23C16/46

CPC classification number: C23C16/4585 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45591 ,  C23C16/4584 ,  C23C16/46 ,  C30B25/165 ,  C30B29/06 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785

Abstract: Apparatus for treating wafers using a wafer carrier rotated about an axis is provided with a ring which surrounds the wafer carrier during operation. Treatment gasses directed onto a top surface of the carrier flow outwardly away from the axis over the carrier and over the ring, and pass downstream outside of the ring. The outwardly flowing gasses form a boundary over the carrier and ring. The ring helps to maintain a boundary layer of substantially uniform thickness over the carrier, which promotes uniform treatment of the wafers.

公开(公告)号：US10017876B2

公开(公告)日：2018-07-10

申请号：US14150091

申请日：2014-01-08

Applicant: Veeco Instruments Inc.

Inventor： Mikhail Belousov ,  Bojan Mitrovic ,  Keng Moy

IPC: C30B25/14 ,  C23C16/458 ,  C23C16/455

CPC classification number: C30B25/14 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/4584

Abstract: A flow inlet element for a chemical vapor deposition reactor is formed from a plurality of elongated tubular elements extending side-by-side with one another in a plane transverse to the upstream to downstream direction of the reactor. The tubular elements have inlets for ejecting gas in the downstream direction. A wafer carrier rotates around an upstream to downstream axis. The gas distribution elements may provide a pattern of gas distribution which is asymmetrical with respect to a medial plane extending through the axis.