公开(公告)号：US09330939B2

公开(公告)日：2016-05-03

申请号：US13786644

申请日：2013-03-06

申请人： Bhushan N. Zope ,  Avgerinos V. Gelatos ,  Bo Zheng ,  Yu Lei ,  Xinyu Fu ,  Srinivas Gandikota ,  Sang-Ho Yu ,  Mathew Abraham

发明人： Bhushan N. Zope ,  Avgerinos V. Gelatos ,  Bo Zheng ,  Yu Lei ,  Xinyu Fu ,  Srinivas Gandikota ,  Sang-Ho Yu ,  Mathew Abraham

IPC分类号： H01L21/76 ,  H01L21/48 ,  H01L21/02 ,  H01L21/768 ,  H01L21/285

CPC分类号： H01L21/76879 ,  H01L21/02057 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/4846 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53209 ,  H01L23/5329 ,  H01L29/66621

摘要： Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.

摘要翻译： 提供了在半导体器件的接触结构中沉积接触金属层的方法。 在一个实施例中，提供了一种在半导体器件中沉积用于形成接触结构的接触金属层的方法。 该方法包括进行循环金属沉积工艺，以将接触金属层沉积在衬底上并退火设置在衬底上的接触金属层。 循环金属沉积工艺包括将衬底暴露于沉积前体气体混合物以将接触金属层的一部分沉积在衬底上，将接触金属层的该部分暴露于等离子体处理工艺，并重复将衬底暴露于 沉积前体气体混合物，并将接触金属层的部分暴露于等离子体处理工艺，直到实现接触金属层的预定厚度。

公开(公告)号：US08563424B2

公开(公告)日：2013-10-22

申请号：US13456904

申请日：2012-04-26

申请人： Seshadri Ganguli ,  Sang-Ho Yu ,  See-Eng Phan ,  Mei Chang ,  Amit Khandelwal ,  Hyoung-Chan Ha

发明人： Seshadri Ganguli ,  Sang-Ho Yu ,  See-Eng Phan ,  Mei Chang ,  Amit Khandelwal ,  Hyoung-Chan Ha

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： C23C16/18 ,  C23C16/42 ,  C23C16/45523 ,  C23C16/56 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67207 ,  H01L21/68785 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L29/665 ,  H01L29/78

摘要： Methods for forming cobalt silicide are provided. One method for forming a cobalt silicide material includes exposing a substrate having a silicon-containing material to either a wet etch solution or a pre-clean plasma during a first step and then to a hydrogen plasma during a second step of a pre-clean process. The method further includes depositing a cobalt metal layer on the silicon-containing material by a CVD process, heating the substrate to form a first cobalt silicide layer comprising CoSi at the interface of the cobalt metal layer and the silicon-containing material during a first annealing process, removing any unreacted cobalt metal from the substrate during an etch process, and heating the substrate to form a second cobalt silicide layer comprising CoSi2 during a second annealing process.

摘要翻译： 提供了形成硅化钴的方法。 用于形成硅化钴材料的一种方法包括在第一步骤期间将具有含硅材料的衬底暴露于湿蚀刻溶液或预清洁等离子体，然后在预清洁过程的第二步骤期间暴露于氢等离子体 。 该方法还包括通过CVD工艺在含硅材料上沉积钴金属层，加热衬底以在第一退火期间在钴金属层和含硅材料的界面处形成包含CoSi的第一钴硅化物层 在蚀刻过程中从衬底去除任何未反应的钴金属，以及在第二退火过程中加热衬底以形成包含CoSi 2的第二钴硅化物层。

公开(公告)号：US08284124B2

公开(公告)日：2012-10-09

申请号：US11646855

申请日：2006-12-28

申请人： Jin-Hyoung Kim ,  In-Hwan Kim ,  Seung-Chan Byun ,  Sang-Ho Yu

发明人： Jin-Hyoung Kim ,  In-Hwan Kim ,  Seung-Chan Byun ,  Sang-Ho Yu

IPC分类号： G09G3/32 ,  G09G3/30

CPC分类号： G09G3/3233 ,  G09G2300/0842 ,  G09G2310/0251

摘要： An organic electroluminescent display device includes an organic light-emitting diode, a first transistor outputting a data voltage by an nth scan signal (n is a natural number), a second transistor providing a current to the organic light-emitting by the data voltage, a capacitor storing the data voltage, and a third transistor supplying the second transistor and the capacitor with a pre-charge voltage by an (n−1)th scan signal, the pre-charge voltage having an opposite polarity to the data voltage.

摘要翻译： 有机电致发光显示装置包括：有机发光二极管，通过第n扫描信号（n为自然数）输出数据电压的第一晶体管，通过数据电压向有机发光发光的第二晶体管， 存储数据电压的电容器和通过第（n-1）扫描信号向第二晶体管和电容器提供预充电电压的第三晶体管，预充电电压具有与数据电压相反的极性。

公开(公告)号：US20100156875A1

公开(公告)日：2010-06-24

申请号：US12591310

申请日：2009-11-16

申请人： Hak-Su Kim ,  Sang-Ho Yu ,  Won-Kyu Ha

发明人： Hak-Su Kim ,  Sang-Ho Yu ,  Won-Kyu Ha

IPC分类号： G09G5/00 ,  G09G3/30

CPC分类号： G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2310/0224 ,  G09G2310/0251 ,  G09G2320/0233 ,  G09G2320/0252 ,  G09G2320/043

摘要： An organic electroluminescent display device includes a plurality of pixels, each one of the plurality of pixels including: a switching transistor that is connected to a gate line and a data line; a driving transistor, wherein a data voltage of the data line passing through the switching transistor is reflected into a gate of the driving transistor; a sampling transistor that samples a threshold voltage of the driving transistor, wherein a gate of the sampling transistor is connected to a control line, and the sampled threshold voltage is reflected into the gate of the driving transistor; an initializing transistor, wherein a gate of the initializing transistor is connected to a previous or next gate line, and an initialization voltage passing through the initializing transistor is reflected into the gate of the driving transistor; and an organic light emitting diode that is connected to the driving transistor, wherein a driving current of the organic light emitting diode is adjusted according to a voltage of the gate of the driving transistor.

摘要翻译： 有机电致发光显示装置包括多个像素，所述多个像素中的每一个包括：连接到栅极线和数据线的开关晶体管; 驱动晶体管，其中通过所述开关晶体管的数据线的数据电压被反射到所述驱动晶体管的栅极; 采样晶体管，其对所述驱动晶体管的阈值电压进行采样，其中所述采样晶体管的栅极连接到控制线，并且所述采样阈值电压被反射到所述驱动晶体管的栅极中; 初始化晶体管，其中初始化晶体管的栅极连接到先前或下一个栅极线，并且通过初始化晶体管的初始化电压被反射到驱动晶体管的栅极中; 以及连接到所述驱动晶体管的有机发光二极管，其中根据所述驱动晶体管的栅极的电压来调节所述有机发光二极管的驱动电流。

公开(公告)号：US20070296651A1

公开(公告)日：2007-12-27

申请号：US11646855

申请日：2006-12-28

申请人： Jin-Hyoung Kim ,  In-Hwan Kim ,  Seung-Chan Byun ,  Sang-Ho Yu

发明人： Jin-Hyoung Kim ,  In-Hwan Kim ,  Seung-Chan Byun ,  Sang-Ho Yu

IPC分类号： G09G3/30

CPC分类号： G09G3/3233 ,  G09G2300/0842 ,  G09G2310/0251

摘要： An organic electroluminescent display device includes an organic light-emitting diode, a first transistor outputting a data voltage by an nth scan signal (n is a natural number), a second transistor providing a current to the organic light-emitting by the data voltage, a capacitor storing the data voltage, and a third transistor supplying the second transistor and the capacitor with a pre-charge voltage by an (n−1)th scan signal, the pre-charge voltage having an opposite polarity to the data voltage.

摘要翻译： 有机电致发光显示装置包括：有机发光二极管，通过第n扫描信号（n为自然数）输出数据电压的第一晶体管，通过数据电压向有机发光发光的第二晶体管， 存储数据电压的电容器和通过第（n-1）扫描信号向第二晶体管和电容器提供预充电电压的第三晶体管，预充电电压具有与数据电压相反的极性。

公开(公告)号：US06660135B2

公开(公告)日：2003-12-09

申请号：US10038199

申请日：2001-12-21

申请人： Sang-Ho Yu ,  Yonghwa Chris Cha ,  Murali Abburi ,  Shri Singhvi ,  Fufa Chen

发明人： Sang-Ho Yu ,  Yonghwa Chris Cha ,  Murali Abburi ,  Shri Singhvi ,  Fufa Chen

IPC分类号： C25C1434

CPC分类号： H01L21/76882

摘要： A semiconductor metallization process for providing complete via fill on a substrate, free of voids, and a planar metal surface, free of grooves. In one aspect, a refractory layer is deposited onto a substrate having high aspect ratio contacts or vias formed thereon. A conformal PVD metal layer, such as Al or Cu, is then deposited onto the refractory layer at a pressure below about 1 milliTorr. The vias and/or contacts are then filled with metal, such as by reflowing additional metal deposited by physical vapor deposition on the conformal PVD metal layer. The process is preferably performed in an integrated processing system that includes a long throw PVD chamber, wherein a target and a substrate are separated by at least 100 mm, and a hot metal PVD chamber, also serving as a reflow chamber.

摘要翻译： 一种半导体金属化工艺，用于在没有空隙的基板上提供完整的通孔填充，以及没有凹槽的平面金属表面。 在一个方面，将耐火层沉积在具有高比例接触或在其上形成的通孔的基底上。 然后将保形PVD金属层（例如Al或Cu）以低于约1毫托的压力沉积到耐火层上。 然后，通孔和/或触点用金属填充，例如通过将通过物理气相沉积沉积的附加金属回流到共形PVD金属层上。 该方法优选在包括长抛PVD室的集成处理系统中进行，其中靶和基板被分开至少100mm，以及也用作回流室的热金属PVD室。

公开(公告)号：US08536778B2

公开(公告)日：2013-09-17

申请号：US13040936

申请日：2011-03-04

申请人： Jung-Soo Heo ,  Jae-Hee Park ,  Sang-Ho Yu ,  Kyung-Min Park ,  Sung-Hoon Choi ,  Seok-Jong Lee

发明人： Jung-Soo Heo ,  Jae-Hee Park ,  Sang-Ho Yu ,  Kyung-Min Park ,  Sung-Hoon Choi ,  Seok-Jong Lee

IPC分类号： H01L51/52

CPC分类号： H01L27/3244 ,  H01L27/3248 ,  H01L27/3262 ,  H01L51/5088 ,  H01L2251/5315

摘要： An organic electroluminescent device including a switching element and a driving element connected to the switching element on a substrate including a pixel region, a cathode connected to the driving element, in which the cathode includes molybdenum (Mo), an emitting layer on the cathode, and an anode on the emitting layer.

摘要翻译： 一种有机电致发光器件，包括开关元件和连接到基板上的开关元件的驱动元件，该基板包括像素区域，与驱动元件连接的阴极，阴极包括钼（Mo），阴极上的发光层， 和发光层上的阳极。

公开(公告)号：US20120264291A1

公开(公告)日：2012-10-18

申请号：US13452237

申请日：2012-04-20

申请人： Seshadri Ganguli ,  Schubert S. Chu ,  Mei Chang ,  Sang-Ho Yu ,  Kevin Moraes ,  See-Eng Phan

发明人： Seshadri Ganguli ,  Schubert S. Chu ,  Mei Chang ,  Sang-Ho Yu ,  Kevin Moraes ,  See-Eng Phan

IPC分类号： H01L21/768

CPC分类号： C23C16/42 ,  C23C16/18 ,  C23C16/56 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67207 ,  H01L21/68785 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L29/665 ,  H01L29/78

摘要： Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.

摘要翻译： 本文所述的本发明的实施例通常提供用于形成硅化钴层，金属钴层和其它含钴材料的方法和装置。 在一个实施例中，提供了一种用于在衬底上形成含钴硅化物的材料的方法，其包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，沉积 在钴硅化物材料上的金属钴材料，并在基底上沉积金属接触材料。 在另一个实施例中，一种方法包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，将衬底暴露于退火工艺，将阻挡材料沉积在 钴硅化物材料，并将金属接触材料沉积在阻挡材料上。

公开(公告)号：US20110156573A1

公开(公告)日：2011-06-30

申请号：US13040936

申请日：2011-03-04

申请人： Jung-Soo HEO ,  Jae-Hee Park ,  Sang-Ho Yu ,  Kyung-Min Park ,  Sung-Hoon Choi ,  Seok-Jong Lee

发明人： Jung-Soo HEO ,  Jae-Hee Park ,  Sang-Ho Yu ,  Kyung-Min Park ,  Sung-Hoon Choi ,  Seok-Jong Lee

IPC分类号： H05B33/00 ,  H01L51/56

CPC分类号： H01L27/3244 ,  H01L27/3248 ,  H01L27/3262 ,  H01L51/5088 ,  H01L2251/5315

摘要： An organic electroluminescent device including a switching element and a driving element connected to the switching element on a substrate including a pixel region, a cathode connected to the driving element, in which the cathode includes molybdenum (Mo), an emitting layer on the cathode, and an anode on the emitting layer.

摘要翻译： 一种有机电致发光器件，包括开关元件和连接到基板上的开关元件的驱动元件，该基板包括像素区域，与驱动元件连接的阴极，阴极包括钼（Mo），阴极上的发光层， 和发光层上的阳极。

公开(公告)号：US20080268635A1

公开(公告)日：2008-10-30

申请号：US12111930

申请日：2008-04-29

申请人： Sang-Ho Yu ,  Kevin Ti Moraes ,  Seshadri Ganguli ,  Hua Chung ,  See-Eng Phan ,  Amit Khandelwal ,  Kai Wu

发明人： Sang-Ho Yu ,  Kevin Ti Moraes ,  Seshadri Ganguli ,  Hua Chung ,  See-Eng Phan ,  Amit Khandelwal ,  Kai Wu

IPC分类号： H01L21/44

CPC分类号： C23C16/18 ,  C23C16/0227 ,  C23C16/08 ,  C23C16/42 ,  C23C16/4554 ,  C23C16/4586 ,  C23C16/56 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76877 ,  H01L29/665 ,  H01L29/78

摘要： Embodiments of the invention described herein generally provide methods for forming cobalt silicide layers and metallic cobalt layers by using various deposition processes and annealing processes. In one embodiment, a method for forming a cobalt silicide material on a substrate is provided which includes treating the substrate with at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material over the silicon-containing surface, and depositing a copper material over the cobalt silicide material. In another embodiment, a metallic cobalt material may be deposited over the cobalt silicide material prior to depositing the copper material. In one example, the copper material may be formed by depositing a copper seed layer and a copper bulk layer on the substrate. The copper seed layer may be deposited by a PVD process and the copper bulk layer may be deposited by an ECP process or an electroless deposition process.

摘要翻译： 本文描述的本发明的实施例通常提供通过使用各种沉积工艺和退火工艺来形成钴硅化物层和金属钴层的方法。 在一个实施例中，提供了一种在衬底上形成硅化钴材料的方法，其包括用至少一种预清洗方法处理衬底以暴露含硅表面，在含硅表面上沉积钴硅化物材料，以及沉积 在钴硅化物材料上的铜材料。 在另一个实施例中，在沉积铜材料之前，可以在钴硅化物材料上沉积金属钴材料。 在一个示例中，铜材料可以通过在基底上沉积铜籽晶层和铜体积层而形成。 铜种子层可以通过PVD工艺沉积，并且铜体积层可以通过ECP工艺或无电沉积工艺沉积。