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    Process for forming cobalt-containing materials
    1.
    发明授权
    Process for forming cobalt-containing materials 失效
    用于形成含钴材料的方法

    公开(公告)号：US08110489B2

    公开(公告)日：2012-02-07

    申请号：US11733929

    申请日：2007-04-11

    申请人： Seshadri Ganguli ,  Schubert S. Chu ,  Mei Chang ,  Sang-Ho Yu ,  Kevin Moraes ,  See-Eng Phan

    发明人： Seshadri Ganguli ,  Schubert S. Chu ,  Mei Chang ,  Sang-Ho Yu ,  Kevin Moraes ,  See-Eng Phan

    IPC分类号： H01L21/28

    CPC分类号： C23C16/42 ,  C23C16/18 ,  C23C16/56 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67207 ,  H01L21/68785 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L29/665 ,  H01L29/78

    摘要： Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.

    摘要翻译： 本文所述的本发明的实施例通常提供用于形成硅化钴层，金属钴层和其它含钴材料的方法和装置。 在一个实施例中，提供了一种用于在衬底上形成含钴硅化物的材料的方法，其包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，沉积 在钴硅化物材料上的金属钴材料，并在基底上沉积金属接触材料。 在另一个实施例中，一种方法包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，将衬底暴露于退火工艺，将阻挡材料沉积在 钴硅化物材料，并将金属接触材料沉积在阻挡材料上。

    PROCESS FOR FORMING COBALT-CONTAINING MATERIALS
    2.
    发明申请
    PROCESS FOR FORMING COBALT-CONTAINING MATERIALS 有权
    形成含钴材料的方法

    公开(公告)号：US20120264291A1

    公开(公告)日：2012-10-18

    申请号：US13452237

    申请日：2012-04-20

    申请人： Seshadri Ganguli ,  Schubert S. Chu ,  Mei Chang ,  Sang-Ho Yu ,  Kevin Moraes ,  See-Eng Phan

    发明人： Seshadri Ganguli ,  Schubert S. Chu ,  Mei Chang ,  Sang-Ho Yu ,  Kevin Moraes ,  See-Eng Phan

    IPC分类号： H01L21/768

    CPC分类号： C23C16/42 ,  C23C16/18 ,  C23C16/56 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67207 ,  H01L21/68785 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L29/665 ,  H01L29/78

    摘要： Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.

    摘要翻译： 本文所述的本发明的实施例通常提供用于形成硅化钴层，金属钴层和其它含钴材料的方法和装置。 在一个实施例中，提供了一种用于在衬底上形成含钴硅化物的材料的方法，其包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，沉积 在钴硅化物材料上的金属钴材料，并在基底上沉积金属接触材料。 在另一个实施例中，一种方法包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，将衬底暴露于退火工艺，将阻挡材料沉积在 钴硅化物材料，并将金属接触材料沉积在阻挡材料上。

    PROCESS FOR FORMING COBALT-CONTAINING MATERIALS
    3.
    发明申请
    PROCESS FOR FORMING COBALT-CONTAINING MATERIALS 审中-公开
    形成含钴材料的方法

    公开(公告)号：US20110124192A1

    公开(公告)日：2011-05-26

    申请号：US13014656

    申请日：2011-01-26

    申请人： Seshadri Ganguli ,  Schubert S. Chu ,  Mei Chang ,  Sang-Ho Yu ,  Kevin Moraes ,  See-Eng Phan

    发明人： Seshadri Ganguli ,  Schubert S. Chu ,  Mei Chang ,  Sang-Ho Yu ,  Kevin Moraes ,  See-Eng Phan

    IPC分类号： H01L21/768

    CPC分类号： C23C16/18 ,  C23C16/42 ,  C23C16/56 ,  H01L21/02057 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/68785 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76864

    摘要： Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.

    摘要翻译： 本文所述的本发明的实施例通常提供用于形成硅化钴层，金属钴层和其它含钴材料的方法和装置。 在一个实施例中，提供了一种用于在衬底上形成含钴硅化物的材料的方法，其包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，沉积 在钴硅化物材料上的金属钴材料，并在基底上沉积金属接触材料。 在另一个实施例中，一种方法包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，将衬底暴露于退火工艺，将阻挡材料沉积在 钴硅化物材料，并将金属接触材料沉积在阻挡材料上。

    SELECTIVE COBALT DEPOSITION ON COPPER SURFACES
    4.
    发明申请
    SELECTIVE COBALT DEPOSITION ON COPPER SURFACES 审中-公开
    选择性钴沉积铜表面

    公开(公告)号：US20090269507A1

    公开(公告)日：2009-10-29

    申请号：US12111921

    申请日：2008-04-29

    申请人： Sang-Ho Yu ,  Kevin Moraes ,  Seshadri Ganguli ,  Hua Chung ,  See-Eng Phan

    发明人： Sang-Ho Yu ,  Kevin Moraes ,  Seshadri Ganguli ,  Hua Chung ,  See-Eng Phan

    IPC分类号： B05D3/04 ,  B05D5/12 ,  C23C16/44

    CPC分类号： C23C16/16 ,  C23C16/0218 ,  C23C16/18 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/324 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76862 ,  H01L21/76883

    摘要： Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. In one embodiment, a method for capping a copper surface on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a contaminated copper surface and a dielectric surface, exposing the contaminated copper surface to a reducing agent while forming a copper surface during a pre-treatment process, exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, and depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface. In another embodiment, a deposition-treatment cycle includes performing the vapor deposition process and subsequently a post-treatment process, which deposition-treatment cycle may be repeated to form multiple cobalt capping layers.

    摘要翻译： 本发明的实施方案提供了在暴露的电介质表面上在铜表面上选择性地形成钴层的方法。 在一个实施例中，提供了一种用于封盖衬底上的铜表面的方法，其包括将衬底定位在处理室内，其中衬底含有受污染的铜表面和电介质表面，将形成的污染的铜表面暴露于还原剂 在预处理过程中的铜表面，将基底暴露于钴前体气体，以在铜表面上选择性地形成钴覆盖层，同时在气相沉积工艺期间暴露介电表面，并且在钴上沉积介电阻挡层 覆盖层和电介质表面。 在另一个实施方案中，沉积处理循环包括进行气相沉积工艺和随后的后处理工艺，该沉积处理循环可以重复以形成多个钴覆盖层。

    PROCESS FOR FORMING COBALT AND COBALT SILICIDE MATERIALS IN COPPER CONTACT APPLICATIONS
    9.
    发明申请
    PROCESS FOR FORMING COBALT AND COBALT SILICIDE MATERIALS IN COPPER CONTACT APPLICATIONS 审中-公开
    在铜接触应用中形成钴和钴硅材料的方法

    公开(公告)号：US20080268635A1

    公开(公告)日：2008-10-30

    申请号：US12111930

    申请日：2008-04-29

    申请人： Sang-Ho Yu ,  Kevin Ti Moraes ,  Seshadri Ganguli ,  Hua Chung ,  See-Eng Phan ,  Amit Khandelwal ,  Kai Wu

    发明人： Sang-Ho Yu ,  Kevin Ti Moraes ,  Seshadri Ganguli ,  Hua Chung ,  See-Eng Phan ,  Amit Khandelwal ,  Kai Wu

    IPC分类号： H01L21/44

    CPC分类号： C23C16/18 ,  C23C16/0227 ,  C23C16/08 ,  C23C16/42 ,  C23C16/4554 ,  C23C16/4586 ,  C23C16/56 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76877 ,  H01L29/665 ,  H01L29/78

    摘要： Embodiments of the invention described herein generally provide methods for forming cobalt silicide layers and metallic cobalt layers by using various deposition processes and annealing processes. In one embodiment, a method for forming a cobalt silicide material on a substrate is provided which includes treating the substrate with at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material over the silicon-containing surface, and depositing a copper material over the cobalt silicide material. In another embodiment, a metallic cobalt material may be deposited over the cobalt silicide material prior to depositing the copper material. In one example, the copper material may be formed by depositing a copper seed layer and a copper bulk layer on the substrate. The copper seed layer may be deposited by a PVD process and the copper bulk layer may be deposited by an ECP process or an electroless deposition process.

    摘要翻译： 本文描述的本发明的实施例通常提供通过使用各种沉积工艺和退火工艺来形成钴硅化物层和金属钴层的方法。 在一个实施例中，提供了一种在衬底上形成硅化钴材料的方法，其包括用至少一种预清洗方法处理衬底以暴露含硅表面，在含硅表面上沉积钴硅化物材料，以及沉积 在钴硅化物材料上的铜材料。 在另一个实施例中，在沉积铜材料之前，可以在钴硅化物材料上沉积金属钴材料。 在一个示例中，铜材料可以通过在基底上沉积铜籽晶层和铜体积层而形成。 铜种子层可以通过PVD工艺沉积，并且铜体积层可以通过ECP工艺或无电沉积工艺沉积。

    Organic electroluminescent display device and method of driving the same
    10.
    发明授权
    Organic electroluminescent display device and method of driving the same 有权
    有机电致发光显示装置及其驱动方法

    公开(公告)号：US09240139B2

    公开(公告)日：2016-01-19

    申请号：US12591310

    申请日：2009-11-16

    申请人： Hak-Su Kim ,  Sang-Ho Yu ,  Won-Kyu Ha

    发明人： Hak-Su Kim ,  Sang-Ho Yu ,  Won-Kyu Ha

    IPC分类号： G09G5/00 ,  G09G3/30 ,  G09G3/32

    CPC分类号： G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2310/0224 ,  G09G2310/0251 ,  G09G2320/0233 ,  G09G2320/0252 ,  G09G2320/043

    摘要： An organic electroluminescent display device includes a plurality of pixels, each one of the plurality of pixels including: a switching transistor that is connected to a gate line and a data line; a driving transistor, wherein a data voltage of the data line passing through the switching transistor is reflected into a gate of the driving transistor; a sampling transistor that samples a threshold voltage of the driving transistor, wherein a gate of the sampling transistor is connected to a control line, and the sampled threshold voltage is reflected into the gate of the driving transistor; an initializing transistor, wherein a gate of the initializing transistor is connected to a previous or next gate line, and an initialization voltage passing through the initializing transistor is reflected into the gate of the driving transistor; and an organic light emitting diode that is connected to the driving transistor, wherein a driving current of the organic light emitting diode is adjusted according to a voltage of the gate of the driving transistor.

    摘要翻译： 有机电致发光显示装置包括多个像素，所述多个像素中的每一个包括：连接到栅极线和数据线的开关晶体管; 驱动晶体管，其中通过所述开关晶体管的数据线的数据电压被反射到所述驱动晶体管的栅极; 采样晶体管，其对所述驱动晶体管的阈值电压进行采样，其中所述采样晶体管的栅极连接到控制线，并且所述采样阈值电压被反射到所述驱动晶体管的栅极中; 初始化晶体管，其中初始化晶体管的栅极连接到先前或下一个栅极线，并且通过初始化晶体管的初始化电压被反射到驱动晶体管的栅极中; 以及连接到所述驱动晶体管的有机发光二极管，其中根据所述驱动晶体管的栅极的电压来调节所述有机发光二极管的驱动电流。