公开(公告)号：US20130334600A1

公开(公告)日：2013-12-19

申请号：US13525471

申请日：2012-06-18

申请人： Ming-Shun Hsu ,  Wen-Peng Hsu ,  Ke-Feng Lin ,  Min-Hsuan Tsai ,  Chih-Chung Wang

发明人： Ming-Shun Hsu ,  Wen-Peng Hsu ,  Ke-Feng Lin ,  Min-Hsuan Tsai ,  Chih-Chung Wang

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/0878 ,  H01L29/0619 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/66681 ,  H01L29/7816

摘要： A transistor device and a manufacturing method thereof are provided. The transistor device includes a substrate, a first well, a second well, a shallow trench isolation (STI), a source, a drain and a gate. The first well is disposed in the substrate. The second well is disposed in the substrate. The STI is disposed in the second well. The STI has at least one floating diffusion island. The source is disposed in the first well. The drain is disposed in the second well. The electric type of the floating diffusion island is different from or the same with that of the drain. The gate is disposed above the first well and the second well, and partially overlaps the first well and the second well.

摘要翻译： 提供一种晶体管器件及其制造方法。 晶体管器件包括衬底，第一阱，第二阱，浅沟槽隔离（STI），源极，漏极和栅极。 第一个井被设置在基板中。 第二孔设置在基板中。 STI布置在第二个孔中。 STI具有至少一个浮动扩散岛。 源放置在第一个井中。 排水口设置在第二个井中。 浮动扩散岛的电气类型与漏极不同或相同。 门设置在第一井和第二井的上方，并且部分地与第一井和第二井重叠。

公开(公告)号：US08921937B2

公开(公告)日：2014-12-30

申请号：US13216276

申请日：2011-08-24

申请人： Chih-Chung Wang ,  Wei-Lun Hsu ,  Shan-Shi Huang ,  Ke-Feng Lin ,  Te-Yuan Wu

发明人： Chih-Chung Wang ,  Wei-Lun Hsu ,  Shan-Shi Huang ,  Ke-Feng Lin ,  Te-Yuan Wu

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L29/08 ,  H01L21/266 ,  H01L29/66 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423

CPC分类号： H01L29/66681 ,  H01L21/0334 ,  H01L21/266 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/402 ,  H01L29/404 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/66659 ,  H01L29/7816

摘要： The present invention provides a high voltage metal-oxide-semiconductor transistor device including a substrate, a deep well, and a doped region. The substrate and the doped region have a first conductive type, and the substrate has at least one electric field concentration region. The deep well has a second conductive type different from the first conductive type. The deep well is disposed in the substrate, and the doped region is disposed in the deep well. The doping concentrations of the doped region and the deep well in the electric field have a first ratio, and the doping concentrations of the doped region and the deep well outside the electric field have a second ratio. The first ratio is greater than the second ratio.

摘要翻译： 本发明提供一种包括衬底，深阱和掺杂区的高电压金属氧化物半导体晶体管器件。 衬底和掺杂区域具有第一导电类型，并且衬底具有至少一个电场集中区域。 深井具有不同于第一导电类型的第二导电类型。 深阱设置在衬底中，并且掺杂区域设置在深阱中。 掺杂区域和深阱在电场中的掺杂浓度具有第一比例，并且掺杂区域和电场外的深阱的掺杂浓度具有第二比例。 第一比例大于第二比率。

公开(公告)号：US08436418B2

公开(公告)日：2013-05-07

申请号：US13163734

申请日：2011-06-20

申请人： Chih-Chung Wang ,  Wei-Lun Hsu ,  Te-Yuan Wu ,  Ke-Feng Lin ,  Shan-Shi Huang ,  Ming-Tsung Lee ,  Wen-Fang Lee

发明人： Chih-Chung Wang ,  Wei-Lun Hsu ,  Te-Yuan Wu ,  Ke-Feng Lin ,  Shan-Shi Huang ,  Ming-Tsung Lee ,  Wen-Fang Lee

IPC分类号： H01L29/94

CPC分类号： H01L27/0251 ,  H01L27/0266 ,  H01L29/0634 ,  H01L29/1087 ,  H01L29/404 ,  H01L29/42368 ,  H01L29/7817 ,  H01L29/7835 ,  H01L29/7838 ,  H01L29/861

摘要： The present invention provides a high-voltage semiconductor device including a deep well, a first doped region disposed in the deep well, a high-voltage well, a second doped region disposed in the high-voltage well, a first gate structure disposed on the high-voltage well between the second doped region and the first doped region, a doped channel region disposed in the high-voltage region and in contact with the second doped region and the deep well, and a third doped region disposed in the high-voltage well. The high-voltage well has a first conductive type, and the deep well, the first doped region, the second doped region, the doped channel region, and the third doped region have a second conductive type different from the first conductive type.

摘要翻译： 本发明提供了一种高压半导体器件，包括深阱，设置在深阱中的第一掺杂区，高电压阱，设置在高压阱中的第二掺杂区，设置在高阱上的第一栅极结构 在所述第二掺杂区域和所述第一掺杂区域之间的高电压阱，设置在所述高压区域中并与所述第二掺杂区域和所述深阱接触的掺杂沟道区域，以及设置在所述高压区域中的第三掺杂区域 好。 高电压阱具有第一导电类型，并且深阱，第一掺杂区域，第二掺杂区域，掺杂沟道区域和第三掺杂区域具有不同于第一导电类型的第二导电类型。

公开(公告)号：US20120326266A1

公开(公告)日：2012-12-27

申请号：US13169008

申请日：2011-06-26

申请人： Shih-Chieh Pu ,  Ching-Ming Lee ,  Wei-Lun Hsu ,  Chih-Chung Wang ,  Ke-Feng Lin

发明人： Shih-Chieh Pu ,  Ching-Ming Lee ,  Wei-Lun Hsu ,  Chih-Chung Wang ,  Ke-Feng Lin

IPC分类号： H01L27/04

CPC分类号： H01L29/8611 ,  H01L27/0255 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/36

摘要： A high-voltage semiconductor device is disclosed. The HV semiconductor device includes: a substrate; a well of first conductive type disposed in the substrate; a first doping region of second conductive type disposed in the p-well; a first isolation structure disposed in the well of first conductive type and surrounding the first doping region of second conductive type; and a first drift ring of second conductive type disposed between the first doping region of second conductive type and the first isolation structure.

摘要翻译： 公开了一种高压半导体器件。 HV半导体装置包括：基板; 设置在基板中的第一导电类型的阱; 布置在p阱中的第二导电类型的第一掺杂区; 第一隔离结构，设置在第一导电类型的阱中，并且包围第二导电类型的第一掺杂区; 以及设置在第二导电类型的第一掺杂区域和第一隔离结构之间的第二导电类型的第一漂移环。

公开(公告)号：US20120319189A1

公开(公告)日：2012-12-20

申请号：US13163734

申请日：2011-06-20

申请人： Chih-Chung Wang ,  Wei-Lun Hsu ,  Te-Yuan Wu ,  Ke-Feng Lin ,  Shan-Shi Huang ,  Ming-Tsung Lee ,  Wen-Fang Lee

发明人： Chih-Chung Wang ,  Wei-Lun Hsu ,  Te-Yuan Wu ,  Ke-Feng Lin ,  Shan-Shi Huang ,  Ming-Tsung Lee ,  Wen-Fang Lee

IPC分类号： H01L29/739

CPC分类号： H01L27/0251 ,  H01L27/0266 ,  H01L29/0634 ,  H01L29/1087 ,  H01L29/404 ,  H01L29/42368 ,  H01L29/7817 ,  H01L29/7835 ,  H01L29/7838 ,  H01L29/861

摘要： The present invention provides a high-voltage semiconductor device including a deep well, a first doped region disposed in the deep well, a high-voltage well, a second doped region disposed in the high-voltage well, a first gate structure disposed on the high-voltage well between the second doped region and the first doped region, a doped channel region disposed in the high-voltage region and in contact with the second doped region and the deep well, and a third doped region disposed in the high-voltage well. The high-voltage well has a first conductive type, and the deep well, the first doped region, the second doped region, the doped channel region, and the third doped region have a second conductive type different from the first conductive type.

摘要翻译： 本发明提供了一种高压半导体器件，包括深阱，设置在深阱中的第一掺杂区，高电压阱，设置在高压阱中的第二掺杂区，设置在高阱上的第一栅极结构 在所述第二掺杂区域和所述第一掺杂区域之间的高电压阱，设置在所述高压区域中并与所述第二掺杂区域和所述深阱接触的掺杂沟道区域，以及设置在所述高压区域中的第三掺杂区域 好。 高电压阱具有第一导电类型，并且深阱，第一掺杂区域，第二掺杂区域，掺杂沟道区域和第三掺杂区域具有不同于第一导电类型的第二导电类型。

公开(公告)号：US08592905B2

公开(公告)日：2013-11-26

申请号：US13169008

申请日：2011-06-26

申请人： Shih-Chieh Pu ,  Ching-Ming Lee ,  Wei-Lun Hsu ,  Chih-Chung Wang ,  Ke-Feng Lin

发明人： Shih-Chieh Pu ,  Ching-Ming Lee ,  Wei-Lun Hsu ,  Chih-Chung Wang ,  Ke-Feng Lin

IPC分类号： H01L29/66

CPC分类号： H01L29/8611 ,  H01L27/0255 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/36

摘要： A high-voltage semiconductor device is disclosed. The HV semiconductor device includes: a substrate; a well of first conductive type disposed in the substrate; a first doping region of second conductive type disposed in the p-well; a first isolation structure disposed in the well of first conductive type and surrounding the first doping region of second conductive type; and a first drift ring of second conductive type disposed between the first doping region of second conductive type and the first isolation structure.

摘要翻译： 公开了一种高压半导体器件。 HV半导体装置包括：基板; 设置在基板中的第一导电类型的阱; 布置在p阱中的第二导电类型的第一掺杂区; 第一隔离结构，设置在第一导电类型的阱中，并且包围第二导电类型的第一掺杂区; 以及设置在第二导电类型的第一掺杂区域和第一隔离结构之间的第二导电类型的第一漂移环。

公开(公告)号：US20130049114A1

公开(公告)日：2013-02-28

申请号：US13216276

申请日：2011-08-24

申请人： Chih-Chung Wang ,  Wei-Lun Hsu ,  Shan-Shi Huang ,  Ke-Feng Lin ,  Te-Yuan Wu

发明人： Chih-Chung Wang ,  Wei-Lun Hsu ,  Shan-Shi Huang ,  Ke-Feng Lin ,  Te-Yuan Wu

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/66681 ,  H01L21/0334 ,  H01L21/266 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/402 ,  H01L29/404 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/66659 ,  H01L29/7816

摘要： The present invention provides a high voltage metal-oxide-semiconductor transistor device including a substrate, a deep well, and a doped region. The substrate and the doped region have a first conductive type, and the substrate has at least one electric field concentration region. The deep well has a second conductive type different from the first conductive type. The deep well is disposed in the substrate, and the doped region is disposed in the deep well. The doping concentrations of the doped region and the deep well in the electric field have a first ratio, and the doping concentrations of the doped region and the deep well outside the electric field have a second ratio. The first ratio is greater than the second ratio.

摘要翻译： 本发明提供一种包括衬底，深阱和掺杂区的高电压金属氧化物半导体晶体管器件。 衬底和掺杂区域具有第一导电类型，并且衬底具有至少一个电场集中区域。 深井具有不同于第一导电类型的第二导电类型。 深阱设置在衬底中，并且掺杂区域设置在深阱中。 掺杂区域和深阱在电场中的掺杂浓度具有第一比例，并且掺杂区域和电场外的深阱的掺杂浓度具有第二比例。 第一比例大于第二比率。

公开(公告)号：US20120313175A1

公开(公告)日：2012-12-13

申请号：US13156352

申请日：2011-06-09

申请人： Chih-Chung Wang ,  Wei-Lun Hsu ,  Te-Yuan Wu ,  Wen-Fang Lee ,  Ke-Feng Lin ,  Shan-Shi Huang ,  Ming-Tsung Lee

发明人： Chih-Chung Wang ,  Wei-Lun Hsu ,  Te-Yuan Wu ,  Wen-Fang Lee ,  Ke-Feng Lin ,  Shan-Shi Huang ,  Ming-Tsung Lee

IPC分类号： H01L27/06

CPC分类号： H01L27/0277 ,  H01L21/761 ,  H01L21/823481 ,  H01L21/823493 ,  H01L27/0623 ,  H01L27/0922

摘要： The present invention provides a semiconductor device including a substrate, a deep well, a high-voltage well, and a doped region. The substrate and the high-voltage well have a first conductive type, and the deep well and the doped region have a second conductive type different from the first conductive type. The substrate has a high-voltage region and a low-voltage region, and the deep well is disposed in the substrate in the high-voltage region. The high-voltage well is disposed in the substrate between the high-voltage region and the low-voltage region, and the doped region is disposed in the high-voltage well. The doped region and the high-voltage well are electrically connected to a ground.

摘要翻译： 本发明提供一种包括衬底，深阱，高压阱和掺杂区的半导体器件。 衬底和高压阱具有第一导电类型，并且深阱和掺杂区具有不同于第一导电类型的第二导电类型。 衬底具有高电压区域和低电压区域，并且深阱设置在高压区域中的衬底中。 高电压阱设置在高电压区域和低电压区域之间的衬底中，掺杂区域设置在高压阱中。 掺杂区和高电压阱电连接到地。

公开(公告)号：US20130241879A1

公开(公告)日：2013-09-19

申请号：US13420483

申请日：2012-03-14

申请人： HSUEH-YU LU ,  Ke-Feng Lin

发明人： HSUEH-YU LU ,  Ke-Feng Lin

IPC分类号： G06F3/042

CPC分类号： G06F3/0421 ,  G06F2203/04103

摘要： An optical touch module includes a frame that comprises a plurality of side walls and an operating space formed by the plurality of side walls. A display module is disposed inside the frame, the display module comprises a base and a touch panel being disposed on the base, a first interval and a second interval being formed opposite to each other and between the base and the side walls of the frame, the touch panel being located adjacent to the operating space. At least one light sensing device comprises a fixed part and a detection part, and the light sensing device is located inside the first interval. At least one reflective element is disposed on the second interval, and comprises a reflective surface defined in a same horizontal plane as the detection part and oriented to the detection part.

摘要翻译： 光学触摸模块包括框架，该框架包括多个侧壁和由多个侧壁形成的操作空间。 显示模块设置在框架内部，显示模块包括底座和设置在基座上的触摸面板，第一间隔和第二间隔形成为彼此相对并且在基座与框架的侧壁之间， 触摸面板位于操作空间附近。 至少一个感光装置包括固定部分和检测部分，并且光感测装置位于第一间隔内。 至少一个反射元件设置在第二间隔上，并且包括在与检测部分相同的水平平面中限定并且被定向到检测部分的反射表面。

公开(公告)号：US20110194046A1

公开(公告)日：2011-08-11

申请号：US12700741

申请日：2010-02-05

申请人： Ke-Feng Lin

发明人： Ke-Feng Lin

IPC分类号： G02F1/1333

CPC分类号： G02F1/13306 ,  G02F2001/133314

摘要： A liquid crystal module includes a base frame which has a retaining space, two opposite end rims and two opposite side rims surrounding around the retaining space, a backlight panel and a display panel mounted in the retaining space. A top surface of the side rims defines at least one fastening fillister of which a top of a rear wall protrudes forward to form a fastening arm. A front end of the fastening arm protrudes downward to form a buckling portion. A flexible circuit board electrically connects the backlight panel, the display panel and an external circuit, and has a base board of which two opposite ends are mounted to the side rims. At least one fastening strip is formed at the two opposite ends of the base board and stretches into the fastening fillister. A buckling hole is opened in the fastening strip for buckling the buckling portion.

摘要翻译： 液晶模块包括具有保持空间的底座框架，两个相对端边缘和围绕保持空间的两个相对侧边缘，背光板和安装在保持空间中的显示面板。 侧边缘的顶表面限定至少一个紧固填料，其后壁的顶部向前突出以形成紧固臂。 紧固臂的前端向下突出以形成弯曲部。 柔性电路板将背光面板，显示面板和外部电路电连接，并且具有其两个相对端安装到侧边缘的基板。 在基板的两个相对端处形成至少一个紧固条，并且延伸到紧固填充物中。 在紧固带上打开一个弯曲孔，以使屈曲部分弯曲。