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186 条记录 (耗时 0.047 秒)

    Edge Emitting Semiconductor Laser
    11.
    发明申请
    Edge Emitting Semiconductor Laser 有权
    边缘发射半导体激光器

    公开(公告)号：US20110317732A1

    公开(公告)日：2011-12-29

    申请号：US13130444

    申请日：2009-11-19

    申请人： Hans-Christoph Eckstein ,  Uwe D. Zeitner ,  Wolfgang Schmid

    发明人： Hans-Christoph Eckstein ,  Uwe D. Zeitner ,  Wolfgang Schmid

    IPC分类号： H01S5/10

    CPC分类号： H01S5/10 ,  H01S5/028 ,  H01S5/0655 ,  H01S5/1064 ,  H01S5/1203 ,  H01S5/1237 ,  H01S5/16 ,  H01S5/2036 ,  H01S2301/176

    摘要： An edge emitting semiconductor laser includes a semiconductor body having a wave guide area. The wave guide area comprises a lower cover layer, a lower wave guide layer, an active layer for generating laser radiation, an upper wave guide layer and an upper cover layer. The wave guide area also includes at least one structured laser radiation scattering area in which a lateral base laser radiation mode experiences less scattering losses than the radiation of higher laser modes.

    摘要翻译： 边缘发射半导体激光器包括具有波导区域的半导体本体。 波导区域包括下覆盖层，下波导层，用于产生激光辐射的有源层，上波导层和上覆盖层。 波导区域还包括至少一个结构化的激光辐射散射区域，其中横向基底激光辐射模式经受比较高激光模式的辐射更少的散射损耗。

    Radiation-emitting semiconductor body for a vertically emitting laser and method for producing same
    13.
    发明授权
    Radiation-emitting semiconductor body for a vertically emitting laser and method for producing same 有权
    用于垂直发射激光的辐射发射半导体体及其制造方法

    公开(公告)号：US07816163B2

    公开(公告)日：2010-10-19

    申请号：US12240147

    申请日：2008-09-29

    申请人： Wolfgang Schmid ,  Klaus Streubel ,  Norbert Linder

    发明人： Wolfgang Schmid ,  Klaus Streubel ,  Norbert Linder

    IPC分类号： H01L21/00

    CPC分类号： H01S5/14 ,  H01S5/18308 ,  H01S5/2072

    摘要： The present invention concerns a radiation-emitting semiconductor body with a vertical emission direction, a radiation-generating active layer, and a current-conducting layer having a current-blocking region and a current-permeable region, the semiconductor body being provided for a vertically emitting laser with an external resonator, and the external resonator having a defined resonator volume that overlaps with the current-permeable region.

    摘要翻译： 本发明涉及具有垂直发射方向的辐射发射半导体本体，辐射发生有源层和具有电流阻挡区域和导电区域的导电层，该半导体本体设置为垂直 发射具有外部谐振器的激光器，并且外部谐振器具有与导电性区域重叠的限定的谐振器体积。

    Optically pumped semiconductor device
    14.
    发明授权
    Optically pumped semiconductor device 有权
    光泵浦半导体器件

    公开(公告)号：US07778300B2

    公开(公告)日：2010-08-17

    申请号：US11579196

    申请日：2005-04-11

    申请人： Christian Karnutsch ,  Norbert Linder ,  Wolfgang Schmid

    发明人： Christian Karnutsch ,  Norbert Linder ,  Wolfgang Schmid

    IPC分类号： H01S5/00

    CPC分类号： H01S5/18305 ,  H01S5/026 ,  H01S5/041 ,  H01S5/141 ,  H01S5/18313 ,  H01S5/18327 ,  H01S5/18388 ,  H01S5/32341

    摘要： A semiconductor device comprising an optically pumped vertical emitter having an active vertical emitter layer (3), and a pump radiation source, which is used to generate a pump radiation field which propagates in the lateral direction and optically pumps the vertical emitter layer (3) in a pump region, the wavelength of the pump radiation field being smaller than the wavelength of the radiation field (12) generated by the vertical emitter. The pump radiation source has an active pump layer (2), which is arranged downstream of the vertical emitter layer (3) in the vertical direction and which at least partly overlaps the vertical emitter layer as seen in the vertical direction, the active pump layer (2) being arranged in such a way that the pump radiation field generated during operation has a higher power than a parasitic laterally propagating radiation field generated by the vertical emitter layer (3) or that the generation of a parasitic laterally propagating radiation field by the vertical emitter layer (3) is suppressed.

    摘要翻译： 一种半导体器件，包括具有有源垂直发射极层（3）的光泵浦垂直发射器和用于产生在横向方向上传播并泵浦垂直发射极层（3）的泵浦辐射场的泵浦辐射源， 在泵浦区域中，泵浦辐射场的波长小于由垂直发射器产生的辐射场（12）的波长。 泵浦辐射源具有主动泵浦层（2），其在垂直方向上布置在垂直发射极层（3）的下游，并且在垂直方向上至少部分地与垂直发射极层重叠，主动泵浦层 （2）被布置成使得在操作期间产生的泵浦辐射场具有比由垂直发射极层（3）产生的寄生横向传播辐射场更高的功率，或者由所产生的寄生横向传播辐射场 垂直发射极层（3）被抑制。

    Actuator device for actuating a locking mechanism
    16.
    发明授权
    Actuator device for actuating a locking mechanism 失效
    用于致动锁定机构的致动器装置

    公开(公告)号：US07650978B2

    公开(公告)日：2010-01-26

    申请号：US11630534

    申请日：2005-06-11

    申请人： Uwe Rühringer ,  Wolfgang Schmid ,  Thilo Schmidt

    发明人： Uwe Rühringer ,  Wolfgang Schmid ,  Thilo Schmidt

    IPC分类号： F16H63/48 ,  F16H63/38 ,  B60T7/00

    CPC分类号： F16H63/3483 ,  F15B15/261 ,  F16H63/3433 ,  F16H63/3491 ,  F16H2061/226

    摘要： An actuating mechanism (1) for operating a parking-lock mechanism of the drive chain of a vehicle with an automatic drive. The actuating mechanism has a piston unit (4), a detent element and an electromagnetic operating device (6) for operating a release element (7), which is intended for deactivating the detent element (5). The piston unit communicates with an emergency unlocking mechanism (14) and is positioned to open the locking mechanism by way of the piston unit. The detent element, the piston unit and the release element interact such that the locking mechanism remains in the currently engaged state when the locking mechanism is open and the operating device is not electrified, as well as when the locking mechanism is closed and a fluid pressure is applied to the piston unit.

    摘要翻译： 一种用于利用自动驱动来操作车辆的驱动链的驻车锁定机构的致动机构（1）。 致动机构具有用于操作释放元件（7）的活塞单元（4），制动元件和用于操作止动元件（5）的释放元件（7）的电磁操作装置（6）。 活塞单元与紧急解锁机构（14）连通并且被定位成通过活塞单元打开锁定机构。 锁定元件，活塞单元和释放元件相互作用，使得当锁定机构打开并且操作装置未通电时，锁定机构保持处于当前接合状态，并且当锁定机构闭合时，流体压力 被施加到活塞单元。

    DOSING SYSTEM FOR A COATING PLANT
    17.
    发明申请
    DOSING SYSTEM FOR A COATING PLANT 有权
    涂装厂的配料系统

    公开(公告)号：US20080271674A1

    公开(公告)日：2008-11-06

    申请号：US12106901

    申请日：2008-04-21

    申请人： Lothar Rademacher ,  Wolfgang Schmid

    发明人： Lothar Rademacher ,  Wolfgang Schmid

    IPC分类号： B05C9/02

    CPC分类号： B05B12/085 ,  B05B1/3093 ,  B05B13/0452 ,  B05B15/58 ,  B05C11/1047

    摘要： A metering system for a coating installation for coating components such as vehicle body parts contains an applicator which applies the coating material supplied to it with a volumetric flow metered on-demand, a regulated first metering device which adjusts the pressure or the volumetric flow of the coating material to be applied by the applicator based on setpoints which are specified by automated installation controls, a transducer to generate a reading which matches the pressure or the volumetric flow of the coating material flowing to the applicator and a control device for regulating the metering device as a function of the specified setpoints and of the reading from the transducer. A second metering device is connected at the outlet of the regulated first metering device for the coating material flowing to the applicator which controls the pressure or volumetric flow of the said applied coating material for precision metering of the coating material applied as a function of the specified setpoints.

    摘要翻译： 用于涂覆装置的用于涂覆诸如车身部件的部件的计量系统包括施加器，其施加供应到其上的涂覆材料，其具有按需量计量的体积流量，调节的第一计量装置，其调节所述压力或体积流量 基于由自动化安装控制器指定的设定点，施加器施加的涂层材料，用于产生与流入施用器的涂料的压力或体积流量匹配的读数的换能器以及用于调节计量装置的控制装置 作为指定设定值和来自换能器的读数的函数。 第二计量装置连接在调节的第一计量装置的出口处，用于流到施加器的涂层材料，其控制所施加的涂层材料的压力或体积流量，用于根据指定的应用施加的涂层材料的精密计量 设定值。

    Radiation-emitting semiconductor body for a vertically emitting laser and method for producing same
    18.
    发明授权
    Radiation-emitting semiconductor body for a vertically emitting laser and method for producing same 有权
    用于垂直发射激光的辐射发射半导体体及其制造方法

    公开(公告)号：US07443898B2

    公开(公告)日：2008-10-28

    申请号：US11210263

    申请日：2005-08-23

    申请人： Wolfgang Schmid ,  Klaus Streubel ,  Norbert Linder

    发明人： Wolfgang Schmid ,  Klaus Streubel ,  Norbert Linder

    IPC分类号： H01S5/00

    CPC分类号： H01S5/14 ,  H01S5/18308 ,  H01S5/2072

    摘要： The present invention concerns a radiation-emitting semiconductor body with a vertical emission direction, a radiation-generating active layer, and a current-conducting layer having a current-blocking region and a current-permeable region, the semiconductor body being provided for a vertically emitting laser with an external resonator, and the external resonator having a defined resonator volume that overlaps with the current-permeable region.

    摘要翻译： 本发明涉及具有垂直发射方向的辐射发射半导体本体，辐射发生有源层和具有电流阻挡区域和导电区域的导电层，该半导体本体设置为垂直 发射具有外部谐振器的激光器，并且外部谐振器具有与导电性区域重叠的限定的谐振器体积。

    Integrated tapered diode laser arrangement and method for producing it
    19.
    发明申请
    Integrated tapered diode laser arrangement and method for producing it 有权
    集成锥形二极管激光器布置及其制造方法

    公开(公告)号：US20080212632A1

    公开(公告)日：2008-09-04

    申请号：US12072761

    申请日：2008-02-27

    申请人： Franz Eberhard ,  Thomas Schlereth ,  Wolfgang Schmid

    发明人： Franz Eberhard ,  Thomas Schlereth ,  Wolfgang Schmid

    IPC分类号： H01S5/20 ,  H01L33/00

    CPC分类号： H01S5/20 ,  B82Y20/00 ,  H01S5/1064 ,  H01S5/162 ,  H01S5/2072 ,  H01S5/3414 ,  H01S5/343

    摘要： An integrated tapered diode laser arrangement comprises an injector region (2) and a region (3) which is optically coupled to the injector region and expands in a cross section. At least one of said regions (2, 3) has a quantum well structure with a plurality of semiconductor materials, wherein the semiconductor materials are intermixed at least in one region (21, 31). The intermixed region (21, 31) has a larger electrical band gap than a non-intermixed region.

    摘要翻译： 集成的锥形二极管激光装置包括喷射器区域（2）和与喷射器区域光学耦合并在横截面中膨胀的区域（3）。 所述区域（2,3）中的至少一个具有多个半导体材料的量子阱结构，其中半导体材料至少在一个区域（21,31）中混合。 混合区域（21,31）具有比非混合区域更大的电气带隙。