公开(公告)号：US08071429B1

公开(公告)日：2011-12-06

申请号：US12954151

申请日：2010-11-24

申请人： Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  Wei Zheng ,  Keh-Chiang Ku ,  Howard E. Rhodes

发明人： Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  Wei Zheng ,  Keh-Chiang Ku ,  Howard E. Rhodes

IPC分类号： H01L21/304

CPC分类号： H01L21/78 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14687

摘要： Embodiments of a method for separating dies from a wafer having first and second sides. The process embodiment includes masking the first side of the wafer, the mask including openings therein to expose parts of the first side substantially aligned with scribe lines of the wafer. The process embodiment also includes etching from the exposed parts of the first side of the wafer until an intermediate position between the first and second sides and sawing the remainder of the wafer, starting from the intermediate position until reaching the second surface.

摘要翻译： 用于从具有第一和第二侧的晶片分离模具的方法的实施例。 该工艺实施例包括掩蔽晶片的第一侧，掩模包括其中的开口，以暴露基本上与晶片划线对齐的第一侧的部分。 工艺实施例还包括从晶片的第一侧的暴露部分进行蚀刻，直到第一和第二面之间的中间位置，并从中间位置开始到达第二表面，锯切晶片的其余部分。

公开(公告)号：US20110241090A1

公开(公告)日：2011-10-06

申请号：US12755088

申请日：2010-04-06

申请人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Howard E. Rhodes

发明人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Howard E. Rhodes

IPC分类号： H01L31/112 ,  H01L21/66

CPC分类号： H01L27/14689 ,  H01L21/26586 ,  H01L27/1464 ,  H01L27/14643 ,  H04N5/378

摘要： Embodiments of a process for forming a photodetector region in a CMOS pixel by dopant implantation, the process comprising masking a photodetector area of a surface of a substrate for formation of the photodetector region, positioning the substrate at a plurality of twist angles, and at each of the plurality of twist angles, directing dopants at the photodetector area at a selected tilt angle. Embodiments of a CMOS pixel comprising a photodetector region formed in a substrate, the photodetector region comprising overlapping first and second dopant implants, wherein the overlap region has a different dopant concentration than the non-overlapping parts of the first and second implants, a floating diffusion formed in the substrate, and a transfer gate formed on the substrate between the photodetector and the transfer gate. Other embodiments are disclosed and claimed.

摘要翻译： 用于通过掺杂剂注入在CMOS像素中形成光电检测器区域的方法的实施例，该方法包括掩蔽用于形成光电检测器区域的基板的表面的光电检测器区域，将基板定位在多个扭曲角度 在多个扭转角度中，以选定的倾斜角将光电探测器区域上的掺杂剂引导。 CMOS像素的实施例包括形成在衬底中的光电检测器区域，所述光电检测器区域包括重叠的第一和第二掺杂剂注入，其中所述重叠区域具有与所述第一和第二植入物的非重叠部分不同的掺杂剂浓度， 形成在基板上，以及形成在光电检测器和传输门之间的基板上的传输门。 公开和要求保护其他实施例。

公开(公告)号：US07888215B2

公开(公告)日：2011-02-15

申请号：US12133217

申请日：2008-06-04

申请人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Howard E. Rhodes

发明人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Howard E. Rhodes

IPC分类号： H01L21/336

CPC分类号： H01L31/03529 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14689 ,  Y02E10/50

摘要： An image sensor with a high full-well capacity includes a photosensitive region, a transfer gate, and sidewall spacers. The photosensitive region is formed to accumulate an image charge in response to light. The transfer gate disposed adjacent to the photosensitive region and coupled to selectively transfer the image charge from the photosensitive region to other pixel circuitry. First and second sidewall spacers are disposed on either side of the transfer gate. The first sidewall spacer closest to the photosensitive region is narrower than the second sidewall spacer. In some cases, the first sidewall spacer may be omitted.

摘要翻译： 具有高全阱容量的图像传感器包括光敏区域，转移栅极和侧壁间隔物。 光敏区域形成为响应于光积累图像电荷。 所述传输栅极邻近所述光敏区域设置并耦合以选择性地将所述图像电荷从所述感光区域传送到其它像素电路。 第一和第二侧壁间隔件设置在传送门的两侧。 最靠近感光区域的第一侧壁隔离物比第二侧壁间隔物窄。 在一些情况下，可以省略第一侧壁间隔物。

公开(公告)号：US20100123069A1

公开(公告)日：2010-05-20

申请号：US12272677

申请日：2008-11-17

申请人： Duli Mao ,  Vincent Venezia ,  Hsin-Chih Tai ,  Yin Qian ,  Howard E. Rhodes

发明人： Duli Mao ,  Vincent Venezia ,  Hsin-Chih Tai ,  Yin Qian ,  Howard E. Rhodes

IPC分类号： H01L31/00 ,  H01L21/00

CPC分类号： H01L27/14603 ,  H01L27/14605 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14683 ,  H01L27/14689

摘要： A backside illuminated imaging pixel with improved angular response includes a semiconductor layer having a front and a back surface. The imaging pixel also includes a photodiode region formed in the semiconductor layer. The photodiode region includes a first and a second n-region. The first n-region has a centerline projecting between the front and back surfaces of the semiconductor layer. The second n-region is disposed between the first n-region and the back surface of the semiconductor layer such that the second n-region is offset from the centerline of the first n-region.

摘要翻译： 具有改进的角度响应的背面照明成像像素包括具有前表面和后表面的半导体层。 成像像素还包括形成在半导体层中的光电二极管区域。 光电二极管区域包括第一和第二n区域。 第一n区具有在半导体层的前表面和后表面之间突出的中心线。 第二n区设置在半导体层的第一n区和背表面之间，使得第二n区偏离第一n区的中心线。

公开(公告)号：US08569856B2

公开(公告)日：2013-10-29

申请号：US13288731

申请日：2011-11-03

申请人： Yin Qian ,  Hsin-Chih Tai ,  Keh-Chiang Ku ,  Vincent Venezia ,  Duli Mao ,  Wei Zheng ,  Howard E. Rhodes

发明人： Yin Qian ,  Hsin-Chih Tai ,  Keh-Chiang Ku ,  Vincent Venezia ,  Duli Mao ,  Wei Zheng ,  Howard E. Rhodes

IPC分类号： H01L21/00

CPC分类号： H01L23/481 ,  H01L21/6835 ,  H01L23/522 ,  H01L24/05 ,  H01L27/14636 ,  H01L27/1464 ,  H01L2221/6835 ,  H01L2224/05548 ,  H01L2224/05553 ,  H01L2224/05567 ,  H01L2924/00014 ,  H01L2924/12043 ,  H01L2224/05552 ,  H01L2924/00

摘要： Embodiments of a semiconductor device that includes a semiconductor substrate and a cavity disposed in the semiconductor substrate that extends at least from a first side of the semiconductor substrate to a second side of the semiconductor substrate. The semiconductor device also includes an insulation layer disposed over the first side of the semiconductor substrate and coating sidewalls of the cavity. A conductive layer including a bonding pad is disposed over the insulation layer. The conductive layer extends into the cavity and connects to a metal stack disposed below the second side of the semiconductor substrate. A through silicon via pad is disposed below the second side of the semiconductor substrate and connected to the metal stack. The through silicon via pad is position to accept a through silicon via.

摘要翻译： 半导体器件的实施例包括半导体衬底和设置在半导体衬底中的至少从半导体衬底的第一侧至半导体衬底的第二侧延伸的空腔。 半导体器件还包括设置在半导体衬底的第一侧上并涂覆空腔的侧壁的绝缘层。 包括接合焊盘的导电层设置在绝缘层上。 导电层延伸到空腔中并且连接到设置在半导体衬底的第二侧下方的金属叠层。 贯穿硅通孔焊盘设置在半导体衬底的第二侧下方并连接到金属堆叠。 贯穿硅通孔焊盘的位置是接受硅通孔。

公开(公告)号：US20130092982A1

公开(公告)日：2013-04-18

申请号：US13273026

申请日：2011-10-13

申请人： Gang Chen ,  Sing-Chung Hu ,  Hsin-Chih Tai ,  Duli Mao ,  Manoj Bikumandla ,  Wei Zheng ,  Yin Qian ,  Zhibin Xiong ,  Vincent Venezia ,  Keh-Chiang Ku ,  Howard E. Rhodes

发明人： Gang Chen ,  Sing-Chung Hu ,  Hsin-Chih Tai ,  Duli Mao ,  Manoj Bikumandla ,  Wei Zheng ,  Yin Qian ,  Zhibin Xiong ,  Vincent Venezia ,  Keh-Chiang Ku ,  Howard E. Rhodes

IPC分类号： H01L27/148 ,  H01L31/18 ,  H01L31/101

CPC分类号： H01L27/14616 ,  H01L27/14689

摘要： Embodiments of an image sensor pixel that includes a photosensitive element, a floating diffusion region, and a transfer device. The photosensitive element is disposed in a substrate layer for accumulating an image charge in response to light. The floating diffusion region is dispose in the substrate layer to receive the image charge from the photosensitive element. The transfer device is disposed between the photosensitive element and the floating diffusion region to selectively transfer the image charge from the photosensitive element to the floating diffusion region. The transfer device includes a buried channel device including a buried channel gate disposed over a buried channel dopant region. The transfer device also includes a surface channel device including a surface channel gate disposed over a surface channel region. The surface channel device is in series with the buried channel device. The surface channel gate has the opposite polarity of the buried channel gate.

摘要翻译： 包括感光元件，浮动扩散区域和转印装置的图像传感器像素的实施例。 感光元件设置在基板层中，用于响应于光积累图像电荷。 浮动扩散区域设置在衬底层中以从感光元件接收图像电荷。 转移装置设置在感光元件和浮动扩散区域之间以选择性地将图像电荷从感光元件转移到浮动扩散区域。 传输装置包括掩埋沟道器件，其包括设置在掩埋沟道掺杂区域上的掩埋沟道栅极。 转移装置还包括表面通道装置，其包括设置在表面通道区域上的表面通道门。 表面通道装置与掩埋通道装置串联。 表面沟道栅极具有与掩埋沟道栅极相反的极性。

公开(公告)号：US08405748B2

公开(公告)日：2013-03-26

申请号：US12837870

申请日：2010-07-16

申请人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Howard E. Rhodes

发明人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Howard E. Rhodes

IPC分类号： H04N3/14

CPC分类号： H04N5/3696 ,  H01L27/14621 ,  H01L27/1464 ,  H04N9/04

摘要： Embodiments of an apparatus comprising a pixel array comprising a plurality of macropixels. Each macropixel includes a pair of first pixels each including a color filter for a first color, the first color being one to which pixels are most sensitive, a second pixel including a color filter for a second color, the second color being one to which the pixels are least sensitive and a third pixel including a color filter for a third color, the third color being one to which pixels have a sensitivity between the least sensitive and the most sensitive, wherein the first pixels each occupy a greater proportion of the light-collection area of the macropixel than either the second pixel or the third pixel. Corresponding process and system embodiments are disclosed and claimed.

摘要翻译： 包括包括多个宏像素的像素阵列的装置的实施例。 每个宏像素包括一对第一像素，每个第一像素包括用于第一颜色的滤色器，第一颜色是像素最敏感的一个，第二像素包括用于第二颜色的滤色器，第二颜色是 像素是最不灵敏的，并且第三像素包括用于第三颜色的滤色器，第三颜色是像素在最不灵敏和最敏感之间具有灵敏度的一个，其中第一像素每个占据较大比例的发光元件， 大小像素的收集区域比第二像素还是第三像素。 公开和要求保护相应的过程和系统实施例。

公开(公告)号：US08338856B2

公开(公告)日：2012-12-25

申请号：US12853803

申请日：2010-08-10

申请人： Hsin-Chih Tai ,  Howard E. Rhodes ,  Wei Zheng ,  Vincent Venezia ,  Yin Qian ,  Duli Mao

发明人： Hsin-Chih Tai ,  Howard E. Rhodes ,  Wei Zheng ,  Vincent Venezia ,  Yin Qian ,  Duli Mao

IPC分类号： H01L31/0328

CPC分类号： H01L27/1464 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14638

摘要： A backside illuminated (“BSI”) complementary metal-oxide semiconductor (“CMOS”) image sensor includes a photosensitive region disposed within a semiconductor layer and a stress adjusting layer. The photosensitive region is sensitive to light incident on a backside of the BSI CMOS image sensor to collect an image charge. The stress adjusting layer is disposed on a backside of the semiconductor layer to establish a stress characteristic that encourages photo-generated charge carriers to migrate towards the photosensitive region.

摘要翻译： 背面照明（BSI）互补金属氧化物半导体（CMOS）图像传感器包括设置在半导体层和应力调整层内的感光区域。 感光区域对入射到BSI CMOS图像传感器背面的光敏感，以收集图像电荷。 应力调整层设置在半导体层的背面，以建立一种应力特性，该应力特性促使光生电荷载流子迁移到光敏区域。

公开(公告)号：US08330195B2

公开(公告)日：2012-12-11

申请号：US12967759

申请日：2010-12-14

申请人： Vincent Venezia ,  Ashish Shah ,  Rongsheng Yang ,  Duli Mao ,  Yin Qian ,  Hsin-Chih Tai ,  Howard E. Rhodes

发明人： Vincent Venezia ,  Ashish Shah ,  Rongsheng Yang ,  Duli Mao ,  Yin Qian ,  Hsin-Chih Tai ,  Howard E. Rhodes

IPC分类号： H01L31/062

CPC分类号： H01L27/1463 ,  H01L27/14601

摘要： An image sensor pixel includes a substrate, a first epitaxial layer, a collector layer, a second epitaxial layer and a light collection region. The substrate is doped to have a first conductivity type. The first epitaxial layer is disposed over the substrate and doped to have the first conductivity type as well. The collector layer is selectively disposed over at least a portion of the first epitaxial layer and doped to have a second conductivity type. The second epitaxial layer is disposed over the collector layer and doped to have the first conductivity type. The light collection region collects photo-generated charge carriers and is disposed within the second epitaxial layer. The light collection region is also doped to have the second conductivity type.

摘要翻译： 图像传感器像素包括基板，第一外延层，集电极层，第二外延层和光收集区域。 衬底被掺杂以具有第一导电类型。 第一外延层设置在衬底上并掺杂以具有第一导电类型。 集电极层选择性地设置在第一外延层的至少一部分上并被掺杂以具有第二导电类型。 第二外延层设置在集电极层上并掺杂以具有第一导电类型。 光收集区域收集光生电荷载流子并且设置在第二外延层内。 光收集区域也被掺杂以具有第二导电类型。

公开(公告)号：US20120302000A1

公开(公告)日：2012-11-29

申请号：US13566638

申请日：2012-08-03

申请人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Howard E. Rhodes

发明人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Howard E. Rhodes

IPC分类号： H01L31/0232

CPC分类号： H01L27/14698 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689

摘要： A technique for fabricating an image sensor including a pixel circuitry region and a peripheral circuitry region includes fabricating front side components on a front side of the image sensor. A dopant layer is implanted on a backside of the image sensor. A anti-reflection layer is formed on the backside and covers a first portion of the dopant layer under the pixel circuitry region while exposing a second portion of the dopant layer under the peripheral circuitry region. The first portion of the dopant layer is laser annealed from the backside of the image sensor through the anti-reflection layer. The anti-reflection layer increases a temperature of the first portion of the dopant layer during the laser annealing.

摘要翻译： 一种用于制造包括像素电路区域和外围电路区域的图像传感器的技术包括在图像传感器的正面上制造前侧部件。 掺杂剂层植入图像传感器的背面。 在背面形成防反射层，并且在像素电路区域下方覆盖掺杂剂层的第一部分，同时在外围电路区域下方暴露掺杂剂层的第二部分。 掺杂剂层的第一部分通过抗反射层从图像传感器的背面激光退火。 抗反射层在激光退火期间增加掺杂剂层的第一部分的温度。