公开(公告)号：US20060003602A1

公开(公告)日：2006-01-05

申请号：US10883180

申请日：2004-06-30

申请人： Zhiyi Yu ,  Jay Curless ,  Yong Liang

发明人： Zhiyi Yu ,  Jay Curless ,  Yong Liang

IPC分类号： H01L21/31

CPC分类号： H01L21/02181 ,  C23C14/0026 ,  C23C14/083 ,  H01L21/02192 ,  H01L21/0234 ,  H01L21/28194 ,  H01L21/3115 ,  H01L21/31645 ,  H01L29/513 ,  H01L29/517

摘要： Semiconductor structures and processes for fabricating semiconductor structures comprising hafnium oxide layers modified with lanthanum oxide or a lanthanide-series metal oxide are provided. A semiconductor structure in accordance with an embodiment of the invention comprises an amorphous layer of hafnium oxide overlying a substrate. A lanthanum-containing dopant or a lanthanide-series metal-containing dopant is comprised within the amorphous layer of hafnium oxide. The process comprises growing an amorphous layer of hafnium oxide overlying a substrate. The amorphous layer of hafnium oxide is doped with a dopant having the chemical formulation LnOx, where Ln is lanthanum, a lanthanide-series metal, or a combination thereof, and X is any number greater than zero. The doping step may be performed during or after growth of the amorphous layer of hafnium oxide.

摘要翻译： 提供半导体结构和制造半导体结构的方法，其包括用氧化镧或镧系金属氧化物改性的氧化铪层。 根据本发明的实施例的半导体结构包括覆盖在衬底上的氧化铪的非晶层。 含镧掺杂剂或含镧系金属的掺杂剂包含在氧化铪的非晶层内。 该方法包括在衬底上生长氧化铪的非晶层。 氧化铪的非晶层掺杂有具有化学配方LnO x x的掺杂剂，其中Ln是镧，镧系金属或其组合，X是大于零的任何数。 掺杂步骤可以在氧化铪的非晶层生长期间或之后进行。

公开(公告)号：US20050287285A1

公开(公告)日：2005-12-29

申请号：US10510928

申请日：2003-04-11

申请人： Herbert Hultin ,  Yong Liang

发明人： Herbert Hultin ,  Yong Liang

IPC分类号： A23J1/02 ,  A23J1/04 ,  A23L13/00 ,  A23L1/31

CPC分类号： A23J1/04 ,  A23J1/02

摘要： The invention is based, in part, on the discovery that the addition of cations, such as calcium or magnesium ions, to muscle tissue before solubilization of the muscle proteins enhances removal of membranes, which reduces oxidation and spoilage of the muscle tissue.

摘要翻译： 本发明部分地基于以下发现：在肌肉蛋白溶解之前向肌肉组织中添加阳离子（例如钙或镁离子）增强了膜的去除，这减少了肌肉组织的氧化和变质。

公开(公告)号：US06890816B2

公开(公告)日：2005-05-10

申请号：US10359879

申请日：2003-02-07

申请人： Yong Liang ,  Ravindranath Droopad

发明人： Yong Liang ,  Ravindranath Droopad

IPC分类号： C30B25/18 ,  H01L21/316 ,  H01L21/8242 ,  C30B11/00 ,  C30B23/00 ,  C23C16/00 ,  C23C14/00

CPC分类号： H01L21/02197 ,  C30B25/18 ,  H01L21/31691 ,  Y10S438/938

摘要： High quality epitaxial layers of monocrystalline perovskite materials (18) can be grown overlying monocrystalline substrates (12) such as gallium arsenide wafers by forming a metal template layer (16) on the monocrystalline substrate. The structure includes a metal-containing layer (16) to mitigate unwanted oxidation of underlying layers and a low-temperature seed layer (19) that prevents degradation of an epitaxial layer (14) during growth of the perovskite layer (18).

摘要翻译： 通过在单晶衬底上形成金属模板层（16），可以将单晶钙钛矿材料（18）的高质量外延层生长在叠加的单晶衬底（12）如砷化镓晶片上。 该结构包括用于减轻下层的不希望氧化的含金属层（16）和防止在钙钛矿层（18）生长期间外延层（14）退化的低温晶种层（19）。

公开(公告)号：US06524651B2

公开(公告)日：2003-02-25

申请号：US09770784

申请日：2001-01-26

申请人： Shupan Gan ,  Yong Liang

发明人： Shupan Gan ,  Yong Liang

IPC分类号： C23C1640

CPC分类号： H01L21/02233 ,  C30B23/02 ,  C30B29/16 ,  C30B29/22 ,  H01L21/02142 ,  H01L21/02236 ,  H01L21/02301 ,  H01L21/02304 ,  H01L21/31683 ,  H01L21/31691 ,  H01L28/56

摘要： A stable oxidized structure and an improved method of making such a structure, including an improved method of making an interfacial template for growing a crystalline metal oxide structure, are disclosed. The improved method comprises the steps of providing a substrate with a clean surface and depositing a metal on the surface at a high temperature under a vacuum to form a metal-substrate compound layer on the surface with a thickness of less than one monolayer. The compound layer is then oxidized by exposing the compound layer to essentially oxygen at a low partial pressure and low temperature. The method may further comprise the step of annealing the surface while under a vacuum to further stabilize the oxidized film structure. A crystalline metal oxide structure may be subsequently epitaxially grown by using the oxidized film structure as an interfacial template and depositing on the interfacial template at least one layer of a crystalline metal oxide.

公开(公告)号：US07672449B2

公开(公告)日：2010-03-02

申请号：US11611086

申请日：2006-12-14

申请人： Yong Liang ,  Haihong Wei ,  Binfeng Wang ,  Xinjun Zhang

发明人： Yong Liang ,  Haihong Wei ,  Binfeng Wang ,  Xinjun Zhang

IPC分类号： H04M1/00

CPC分类号： H04Q11/0421 ,  H04Q2213/13003 ,  H04Q2213/13039 ,  H04Q2213/13109 ,  H04Q2213/13199 ,  H04Q2213/13298

摘要： This invention presents a multimode xDSL line card adaptive activation method, comprising the following steps: A) A master controller is installed and configured with multiple templates based on the modes of operation supported by a line card, and forwards templates to said line card; B) The line card receives templates forwarded by the master controller and activates the line card communications chip; C) The communications chip communicates with the remote CPE and decides on a mode of operation according to a handshake protocol; D) The line card employs a corresponding template according to the mode of operation chosen in Step C, and practices circuit activation with the CPE. This invention solves the existing problems in current multimode xDSL technology of poor compatibility and inability to adapt effectively.

摘要翻译： 本发明提出一种多模xDSL线卡自适应激活方法，包括以下步骤：A）主控制器根据线卡所支持的操作模式安装并配置多个模板，并将模板转发到所述线卡; B）线卡接收由主控制器转发的模板，激活线卡通信芯片; C）通信芯片与远程CPE通信，根据握手协议决定操作模式; D）线卡根据步骤C中选择的操作模式采用相应的模板，并用CPE实现电路激活。 本发明解决了当前多模式xDSL技术存在的兼容性差，无法有效适应的问题。

公开(公告)号：US20090217963A1

公开(公告)日：2009-09-03

申请号：US12040259

申请日：2008-02-29

申请人： Yong Liang ,  Kurt W. Eisenbeiser ,  Allison M. Fisher ,  Ramkumar Krishnan

发明人： Yong Liang ,  Kurt W. Eisenbeiser ,  Allison M. Fisher ,  Ramkumar Krishnan

IPC分类号： H01L31/18 ,  H01L31/0224

CPC分类号： H01G9/2081 ,  H01G9/2031 ,  H01G9/2059 ,  H01L27/301 ,  H01L31/022466 ,  H01L51/0086 ,  H01L51/447 ,  Y02E10/542 ,  Y02P70/521

摘要： A method of making a plurality of photovoltaic cells (400, 800, 1112) for charging a battery (1230) of an electronic device (1010) includes forming by a self-assembly process a plurality of interdigitated photovoltaic cells (400, 800, 1112) between two terminal electrodes (102, 202, 132, 232) coupled to the battery (1230). One electrode is a transport conductive material (102, 202) including a conductive material (106, 206) having sidewalls (110, 210) defining a plurality of pores (112). A conductive electrode material (126, 226) is formed over an electrolyte (124, 224) which is formed over a sensitizing material (122, 222) which is formed over an active transport material (114, 214) on the sidewalls (110, 210).

摘要翻译： 制造用于对电子设备（1010）的电池（1230）充电的多个光伏电池（400,800,1112）的方法包括通过自组装工艺形成多个交叉指向的太阳能电池（400,800,111212） ）耦合到耦合到电池（1230）的两个端子电极（102,202,132,232）之间。 一个电极是包括具有限定多个孔（112）的侧壁（110,210）的导电材料（106,206）的传输导电材料（102,202）。 导电电极材料（126,226）形成在电解质（124,224）之上，电解质形成在敏化材料（122,222）上，该敏化材料形成在侧壁（110,210）上的有源输送材料（114,214）上， 210）。

公开(公告)号：US20060216934A1

公开(公告)日：2006-09-28

申请号：US11092469

申请日：2005-03-28

申请人： Yong Liang ,  Clarence Tracy

发明人： Yong Liang ,  Clarence Tracy

IPC分类号： H01L21/20

CPC分类号： H01L21/32051 ,  H01L21/28194 ,  H01L29/513 ,  H01L29/517

摘要： Methods for fabricating high work function p-MOS device metal electrodes are provided. In one embodiment, a method is provided for producing a metal electrode including the steps of: providing a high k dielectric stack with an exposed surface; contacting the exposed surface of the high k dielectric stack with a vapor of a metal oxide wherein the metal oxide is selected from the group consisting of RuOx, IrOx, ReOx, MoOx, WOx, VOx, and PdOx; and contacting the exposed surface of the dielectric stack with a vapor of an additive selected from the group consisting of SiO2, Al2O3, HfO2, ZrO2, MgO, SrO, BaO, Y2O3, La2O3, and TiO2, whereby contacting the exposed surface of the dielectric stack with the vapor of the metal oxide and the vapor of the additive forms an electrode and wherein the additive is present at an amount between about 1% to about 50% by atomic weight percent in the electrode.

摘要翻译： 提供制造高功函数p-MOS器件金属电极的方法。 在一个实施例中，提供了一种用于制造金属电极的方法，包括以下步骤：提供具有暴露表面的高k电介质叠层; 使高k电介质堆叠的暴露表面与金属氧化物的蒸气接触，其中金属氧化物选自RuO x，IrO x，ReO， x，x，x，x，x，x 2，x 2，x 2，x 2，x 2，x 2， 以及使所述电介质堆叠的所述暴露表面与选自由SiO 2，Al 2 O 3 3，N 2 O 3， HfO 2，ZrO 2，MgO，SrO，BaO，Y 2 O 3，La 2 由此使电介质堆叠的暴露表面与金属氧化物的蒸气和添加剂的蒸气接触形成电极 并且其中所述添加剂以所述电极中原子量的约1％至约50％之间的量存在。

公开(公告)号：US06806202B2

公开(公告)日：2004-10-19

申请号：US10309500

申请日：2002-12-03

申请人： Xiaoming Hu ,  James B. Craigo ,  Ravindranath Droopad ,  John L. Edwards, Jr. ,  Yong Liang ,  Yi Wei ,  Zhiyi Yu

发明人： Xiaoming Hu ,  James B. Craigo ,  Ravindranath Droopad ,  John L. Edwards, Jr. ,  Yong Liang ,  Yi Wei ,  Zhiyi Yu

IPC分类号： H01L21461

CPC分类号： H01L21/02046

摘要： A method for removing silicon oxide from a surface of a substrate is disclosed. The method includes depositing material onto the silicon oxide (110) and heating the substrate surface to a sufficient temperature to form volatile compounds including the silicon oxide and the deposited material (120). The method also includes heating the surface to a sufficient temperature to remove any remaining deposited material (130).

公开(公告)号：US06534782B1

公开(公告)日：2003-03-18

申请号：US09722127

申请日：2000-11-22

申请人： Yong Liang ,  John L. Daschbach ,  Yali Su ,  Scott A. Chambers

发明人： Yong Liang ,  John L. Daschbach ,  Yali Su ,  Scott A. Chambers

IPC分类号： H01L310336

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  C30B23/02 ,  C30B29/16 ,  C30B29/605 ,  H01L31/0352 ,  Y10S977/773 ,  Y10S977/774 ,  Y10S977/895

摘要： A method for producing quantum dots. The method includes cleaning an oxide substrate and separately cleaning a metal source. The substrate is then heated and exposed to the source in an oxygen environment. This causes metal oxide quantum dots to form on the surface of the substrate.

公开(公告)号：US20160209732A1

公开(公告)日：2016-07-21

申请号：US14601235

申请日：2015-01-21

申请人： Yong Liang

发明人： Yong Liang

IPC分类号： G03B17/56 ,  G05B15/02

CPC分类号： G05B15/02 ,  F16M11/10 ,  F16M11/128 ,  F16M11/18 ,  F16M13/00 ,  F16M13/04 ,  F16M2200/041 ,  F16M2200/044 ,  G03B17/563

摘要： Apparatus and methods for keeping cameras and video recorders stable are disclosed herein. The apparatus and methods disclose a multifunctional dual-armed stabilizing system for augmenting the capabilities of equipment-stabilizing supports for camera or video recorders. Techniques are disclosed about a vertical grip tri-axial gyro electronic stabilizer that can actively adjust the motors and stabilize the camera and video recorders. A method of dynamically stabilizing a camera is also disclosed.

摘要翻译： 本文公开了用于保持摄像机和录像机稳定的装置和方法。 该装置和方法公开了一种多功能双臂稳定系统，用于增强照相机或录像机的设备稳定支持能力。 公开了关于可以主动调节电动机并稳定摄像机和录像机的垂直抓握三轴陀螺仪电子稳定器的技术。 还公开了一种动态稳定相机的方法。