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    Method of manufacturing substrate
    17.
    发明授权
    Method of manufacturing substrate 有权
    制造基板的方法

    公开(公告)号：US07795140B2

    公开(公告)日：2010-09-14

    申请号：US12247496

    申请日：2008-10-08

    申请人： Yuichi Taguchi ,  Akinori Shiraishi ,  Masahiro Sunohara ,  Kei Murayama ,  Hideaki Sakaguchi ,  Mitsutoshi Higashi

    发明人： Yuichi Taguchi ,  Akinori Shiraishi ,  Masahiro Sunohara ,  Kei Murayama ,  Hideaki Sakaguchi ,  Mitsutoshi Higashi

    IPC分类号： H01L21/44

    CPC分类号： H01L21/486 ,  H01L21/76898 ,  H01L2224/16225 ,  H01L2924/15311 ,  H01L2924/18301

    摘要： A method of manufacturing a substrate, includes: (a) forming the through hole by etching the silicon substrate from a first surface of the silicon substrate by a Bosch process; (b) forming a thermal oxide film such that the thermal oxide film covers the first surface of the silicon substrate, a second surface of the silicon substrate opposite to the first surface, and a surface of the silicon substrate corresponding to a side surface of the through hole, by thermally oxidizing the silicon substrate where the through hole is formed; (c) removing the thermal oxide film; (d) forming an insulating film such that the insulating film covers the first and second surfaces of the silicon substrate and the surface of the silicon substrate corresponding to the side surface of the through hole; and (e) forming the through electrode in the through hole on which the insulating film is formed.

    摘要翻译： 一种制造衬底的方法，包括：（a）通过使用Bosch工艺从硅衬底的第一表面上蚀刻硅衬底形成通孔; （b）形成热氧化膜，使得热氧化膜覆盖硅衬底的第一表面，与第一表面相对的硅衬底的第二表面和与衬底的侧表面相对应的硅衬底的表面 通孔，通过热氧化形成通孔的硅衬底; （c）去除热氧化膜; （d）形成绝缘膜，使得所述绝缘膜覆盖所述硅衬底的所述第一表面和所述第二表面以及所述硅衬底的与所述通孔的侧表面相对应的表面; 和（e）在其上形成有绝缘膜的通孔中形成通孔。