公开(公告)号：US4740829A

公开(公告)日：1988-04-26

申请号：US937432

申请日：1986-12-03

申请人： Takashi Nakagiri ,  Yutaka Hirai ,  Yoshiyuki Osada

发明人： Takashi Nakagiri ,  Yutaka Hirai ,  Yoshiyuki Osada

IPC分类号： H01L29/04 ,  H01L29/16 ,  H01L29/786 ,  H01L31/0368 ,  H01L31/113

CPC分类号： H01L29/04 ,  H01L29/16 ,  H01L29/78684 ,  H01L31/03682 ,  H01L31/1136 ,  Y02E10/546

摘要： A semiconductor device comprises a polycrystalline semiconductor thin film layer comprising germanium atoms as a matrix and containing 3 atomic % or less of hydrogen atoms.

摘要翻译： 半导体器件包括包含锗原子作为基体并且含有3原子％以下的氢原子的多晶半导体薄膜层。

公开(公告)号：US4719501A

公开(公告)日：1988-01-12

申请号：US815113

申请日：1985-12-26

申请人： Katsumi Nakagawa ,  Toshiyuki Komatsu ,  Yutaka Hirai ,  Yoshiyuki Osada ,  Satoshi Omata ,  Takashi Nakagiri

发明人： Katsumi Nakagawa ,  Toshiyuki Komatsu ,  Yutaka Hirai ,  Yoshiyuki Osada ,  Satoshi Omata ,  Takashi Nakagiri

IPC分类号： H01L21/285 ,  H01L29/04 ,  H01L29/786 ,  H01L29/812 ,  H01L29/872 ,  H01L31/0368 ,  H01L31/0392 ,  H01L31/108 ,  H01L31/18

CPC分类号： H01L21/28537 ,  H01L29/04 ,  H01L29/78675 ,  H01L29/78684 ,  H01L29/8126 ,  H01L29/872 ,  H01L31/03682 ,  H01L31/03921 ,  H01L31/108 ,  H01L31/18 ,  Y02E10/546

摘要： A semiconductor element is mainly composed of a polycrystalline Si thin film layer containing 0.01-3 atomic %, and further having a maximum surface unevenness of substantially not more than 800 .ANG. and/or a particular range of etching rate when etched with a predetermined etchant.

摘要翻译： 半导体元件主要由含有0.01-3原子％的多晶Si薄膜层构成，并且当用预定的蚀刻剂进行蚀刻时，还具有基本上不大于800的最大表面凹凸和/或蚀刻速率的特定范围。

公开(公告)号：US4982251A

公开(公告)日：1991-01-01

申请号：US511952

申请日：1990-04-17

申请人： Katsumi Nakagawa ,  Toshiyuki Komatsu ,  Yutaka Hirai ,  Yoshiyuki Osada ,  Satoshi Omata ,  Takashi Nakagiri

发明人： Katsumi Nakagawa ,  Toshiyuki Komatsu ,  Yutaka Hirai ,  Yoshiyuki Osada ,  Satoshi Omata ,  Takashi Nakagiri

IPC分类号： G02F1/136 ,  G02F1/1368 ,  G09F9/30 ,  G09F9/35 ,  H01L21/205 ,  H01L21/336 ,  H01L21/822 ,  H01L27/04 ,  H01L27/12 ,  H01L29/04 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L29/66757 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/78 ,  H01L29/78618 ,  H01L29/78675

摘要： A semiconductor element comprises its main part constituted of a polycrystalline silicon semiconductor layer containing 0.01 to 1 atomic % of fluorine atoms.

摘要翻译： 半导体元件的主要部分由含有0.01〜1原子％的氟原子的多晶硅半导体层构成。

公开(公告)号：US4905072A

公开(公告)日：1990-02-27

申请号：US188677

申请日：1988-04-29

申请人： Toshiyuki Komatsu ,  Yutaka Hirai ,  Katsumi Nakagawa ,  Yoshiyuki Osada ,  Satoshi Omata ,  Takashi Nakagiri

发明人： Toshiyuki Komatsu ,  Yutaka Hirai ,  Katsumi Nakagawa ,  Yoshiyuki Osada ,  Satoshi Omata ,  Takashi Nakagiri

IPC分类号： H01L21/306 ,  H01L29/04

CPC分类号： H01L29/04 ,  H01L21/30604 ,  H01L2924/0002

摘要： A semiconductor device comprises a semiconductor layer of a polycrystalline silicon thin film containing not more than 3 atomic % hydrogen atoms and having a surface unevenness of not more than 800 .ANG. at its maximum. It may also have an etching rate of 20 .ANG./sec. when etched with a mixture of HF, HNO.sub.3 and glacial acetic acid (1:3:6).

摘要翻译： 半导体器件包括含有不超过3原子％氢原子并且表面不均匀度最大不超过800的多晶硅薄膜的半导体层。 它也可能具有20安培/秒的蚀刻速率。 当用HF，HNO 3和冰醋酸（1:3:6）的混合物蚀刻时。

公开(公告)号：US4625224A

公开(公告)日：1986-11-25

申请号：US456717

申请日：1983-01-10

申请人： Katsumi Nakagawa ,  Toshiyuki Komatsu ,  Yoshiyuki Osada ,  Satoshi Omata ,  Yutaka Hirai ,  Takashi Nakagiri

发明人： Katsumi Nakagawa ,  Toshiyuki Komatsu ,  Yoshiyuki Osada ,  Satoshi Omata ,  Yutaka Hirai ,  Takashi Nakagiri

IPC分类号： H01L29/78 ,  G02F1/136 ,  G02F1/1368 ,  G09F9/30 ,  G09F9/35 ,  H01L21/822 ,  H01L27/04 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  H01L49/02

CPC分类号： H01L29/78684 ,  H01L29/04 ,  H01L29/78675

摘要： A semiconductor element having a main part of a polycrystalline silicon semiconductor layer containing 0.01 to 5 atomic % of chlorine atoms.

摘要翻译： 具有含有0.01〜5原子％的氯原子的多晶硅半导体层的主要部分的半导体元件。

公开(公告)号：US4814842A

公开(公告)日：1989-03-21

申请号：US201259

申请日：1988-05-25

申请人： Katsumi Nakagawa ,  Toshiyuki Komatsu ,  Yutaka Hirai ,  Satoshi Omata ,  Yoshiyuki Osada ,  Takashi Nakagiri

发明人： Katsumi Nakagawa ,  Toshiyuki Komatsu ,  Yutaka Hirai ,  Satoshi Omata ,  Yoshiyuki Osada ,  Takashi Nakagiri

IPC分类号： H01L21/205 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L29/78618 ,  H01L29/78 ,  H01L29/78675 ,  H01L29/78684

摘要： A thin film transistor comprises a substrate, a semiconductor layer comprising a polycrystalline silicon containing 3 atomic % or less of hydrogen provided on said substrate, a source region and a drain region provided in the surface part of said semiconductor layer, an insulating layer provided on said semiconductor layer at the portion between these two regions, a gate electrode provided on said insulating layer, a source electrode forming an electrical contact with the source region and a drain electrode forming an electrical contact with the drain region, the overlapping portions between said gate electrode through the insulating layer beneath said gate electrode and the source region and between said gate electrode through the insulating layer beneath said gate electrode and the drain region begin 2000 .ANG. or less in width.

摘要翻译： 薄膜晶体管包括衬底，包括设置在所述衬底上的含有3原子％以下的氢的多晶硅的半导体层，设置在所述半导体层的表面部分中的源极区域和漏极区域，设置在所述衬底上的绝缘层 所述半导体层位于这两个区域之间的部分，设置在所述绝缘层上的栅电极，与源区形成电接触的源电极和与漏区形成电接触的漏极，所述栅之间的重叠部分 通过栅极电极和源极区域之间的绝缘层以及位于所述栅极电极和漏极区域之下的绝缘层的所述栅极电极之间的电极开始宽度为2000或更小。

公开(公告)号：US5004671A

公开(公告)日：1991-04-02

申请号：US287551

申请日：1988-12-20

申请人： Yukuo Nishimura ,  Ken Eguchi ,  Haruki Kawada ,  Yoshinori Tomida ,  Takashi Nakagiri ,  Kenji Saito ,  Toshiaki Kimura ,  Hiroshi Matsuda ,  Kunihiro Sakai ,  Toshihiko Miyazaki

发明人： Yukuo Nishimura ,  Ken Eguchi ,  Haruki Kawada ,  Yoshinori Tomida ,  Takashi Nakagiri ,  Kenji Saito ,  Toshiaki Kimura ,  Hiroshi Matsuda ,  Kunihiro Sakai ,  Toshihiko Miyazaki

IPC分类号： G03F7/025 ,  G11B7/0045 ,  G11B7/245 ,  G11B7/246 ,  G11B7/247

CPC分类号： G11B7/2463 ,  B82Y10/00 ,  B82Y30/00 ,  G03F7/025 ,  G11B7/00455 ,  G11B7/246 ,  G11B7/247 ,  G11B2007/24612 ,  G11B7/245 ,  G11B7/2531 ,  Y10S430/145 ,  Y10S430/146

摘要： An optical recording medium is provided which comprises a diacetylene derivative compound and at least one compound selected from the group consisting of azulenium salt compounds, pyrylium dyes, diene compounds, croconic methines, and polymethine compounds. An optical recording method is also provided which comprises a step of writing by irradiating with a radiation ray corresponding to a recording information an optical recording medium comprising a polydiacetylene derivative compound and a compound selected from the above-mentioned group.

摘要翻译： 提供了一种光学记录介质，其包含二乙炔衍生物化合物和至少一种选自薁鎓盐化合物，吡喃鎓染料，二烯化合物，溴代甲烷和聚甲炔化合物的化合物。 还提供了一种光记录方法，其包括通过用对应于记录信息的辐射线照射包含聚二乙炔衍生物化合物和选自上述基团的化合物的光学记录介质进行写入的步骤。

公开(公告)号：US4830502A

公开(公告)日：1989-05-16

申请号：US799497

申请日：1985-11-19

申请人： Kenji Saito ,  Yukuo Nishimura ,  Yoshinori Tomida ,  Haruki Kawada ,  Ken Eguchi ,  Takashi Nakagiri

发明人： Kenji Saito ,  Yukuo Nishimura ,  Yoshinori Tomida ,  Haruki Kawada ,  Ken Eguchi ,  Takashi Nakagiri

IPC分类号： G01N21/17 ,  G01N21/84

CPC分类号： G01N21/171 ,  G01N21/8422

摘要： An apparatus for measuring a light absorpiton characteristic of a thin film is provided.The apparatus comprises (1) a liquid container containing a liquid on which surface a thin film is to be spread, (2) exciting light source for supplying an exciting light to be projected from below the liquid surface on to a measurement site of the thin film spread on the liquid surface, at such an incident angle that the exciting light reflects totally at the liquid surface, (3) a chopper for converting the exciting light into an intermittent exciting light before the exciting light reaches the measurement site of the thin film, (4) a probe light source for supplying probe light passing the measurement site or its vicinity, and (5) a detector for detecting an amount of deflection of the probe light having passed the measurement site or its vicinity. A method for measuring the light absorption characteristic of a thin film and an equipment for forming a monomolecular built-up film employing the above apparatus are also provided.

摘要翻译： 提供一种用于测量薄膜的光吸收特性的装置。 该装置包括：（1）容纳液体的液体容器，表面上要涂布薄膜，（2）激发光源，将从液面下方突出的激发光提供到薄膜的测量部位 膜以液体表面全部反射的入射角在液面上展开，（3）在激光到达薄膜的测量部位之前将激发光转换成间歇激发光的斩波器 （4）用于提供通过测量部位或其附近的探测光的探测光源，以及（5）用于检测通过测量部位或其附近的探测光的偏转量的检测器。 还提供了用于测量薄膜的光吸收特性的方法和使用上述装置形成单分子组合薄膜的设备。

公开(公告)号：US4813763A

公开(公告)日：1989-03-21

申请号：US870419

申请日：1986-06-04

申请人： Kenji Saito ,  Ken Eguchi ,  Haruki Kawada ,  Yoshinori Tomida ,  Toshihiko Miyazaki ,  Yukuo Nishimura ,  Takashi Nakagiri

发明人： Kenji Saito ,  Ken Eguchi ,  Haruki Kawada ,  Yoshinori Tomida ,  Toshihiko Miyazaki ,  Yukuo Nishimura ,  Takashi Nakagiri

IPC分类号： G02B27/10 ,  G02B27/14

CPC分类号： G02B27/144 ,  G02B27/145

摘要： A light beam fluctuation compensating device is provided which comprises a light source, a first optical system for splitting a light beam emitted from said light source into two light beams and a second optical system for irradiating the two light beams split by said first optical system onto a target. A light beam fluctuation method utilizing the device is also provided.

摘要翻译： 提供了一种光束波动补偿装置，其包括光源，用于将从所述光源发射的光束分成两束光的第一光学系统和用于将由所述第一光学系统分裂的两束光束照射到第二光学系统上的第二光学系统 一个目标。 还提供了利用该装置的光束波动方法。

公开(公告)号：US4723129A

公开(公告)日：1988-02-02

申请号：US827489

申请日：1986-02-06

申请人： Ichiro Endo ,  Yasushi Sato ,  Seiji Saito ,  Takashi Nakagiri ,  Shigeru Ohno

发明人： Ichiro Endo ,  Yasushi Sato ,  Seiji Saito ,  Takashi Nakagiri ,  Shigeru Ohno

IPC分类号： B41J2/05 ,  B41J2/135 ,  B41J2/195 ,  B41J2/21 ,  G01D15/16

CPC分类号： B41J2/0458 ,  B41J2/04593 ,  B41J2/195 ,  B41J2/2128

摘要： A liquid jet recording process comprises the step of providing a continuous passageway defining a path through which liquid can flow. The passageway has an inlet thereto and an outlet orifice therefrom and further defines a thermal chamber portion located directly in the path intermediate the inlet and the outlet orifice and spaced upstream from the outlet orifice. Liquid is supplied to the passageway to fill it and an input signal is generated each time it is desired to produce a liquid droplet. The liquid in the thermal chamber portion is heated in response to each input signal and heating is sufficient instantaneously to cause a change of state of the liquid in the thermal portion chamber sufficient to produce a force acting on liquid filling the passageway between the thermal chamber portion and the orifice that overcomes the surface tension of liquid at the orifice and thereby projects a droplet of liquid from the orifice. After projection of the droplet of liquid and with attenuation of the change of state and the force produced thereby, the liquid chamber portion is replenished with liquid.Apparatus for performing the liquid jet recording process is also disclosed.

摘要翻译： 液体喷射记录方法包括提供限定液体可以流过的路径的连续通道的步骤。 该通道具有入口及其出口孔，并进一步限定位于入口和出口孔之间的路径中的热室部分，并且在出口孔的上游间隔开。 液体被供应到通道以填充它，并且每当需要产生液滴时产生输入信号。 热室部分中的液体响应于每个输入信号被加热，并且加热足以瞬间地加热，以使得热部分室中的液体的状态改变足以产生作用在液体上的力，该液体填充热室部分之间的通道 以及孔口，其克服了孔口处的液体的表面张力，从而从孔口突出液滴。 在液滴突出之后，随着状态变化和由此产生的力的衰减，液体室部分被补充液体。 还公开了用于进行液体喷射记录处理的装置。