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公开(公告)号：US08570138B2
公开(公告)日：2013-10-29
申请号：US13387680
申请日：2010-03-03
IPC分类号： H01C7/10
CPC分类号： G11C13/0007 , H01L45/10 , H01L45/1233 , H01L45/146
摘要： Resistive switches and related methods are provided. Such a resistive switch includes an active material in contact with opposite end electrodes. The active material defines electron traps that capture or release charges in accordance with applied switching voltages. Resistive switches are characterized by ON state and OFF state resistance curves. Resistance ratios of ten times or more are exhibited. The state of a resistive switch is determined using sensing voltages lesser then the switching threshold.
摘要翻译： 提供电阻开关及相关方法。 这种电阻式开关包括与相对端电极接触的活性材料。 活性材料限定了根据施加的开关电压捕获或释放电荷的电子阱。 电阻式开关的特征在于ON状态和OFF状态电阻曲线。 表现出十倍以上的电阻比。 使用小于切换阈值的感测电压来确定电阻式开关的状态。
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公开(公告)号：US20130271442A1
公开(公告)日：2013-10-17
申请号：US13445995
申请日：2012-04-13
申请人： Wendi Li , Wei Yi , Wei Wu , Jianhua Yang
发明人： Wendi Li , Wei Yi , Wei Wu , Jianhua Yang
CPC分类号： G09G3/36 , G09G2300/0439
摘要： A flat-panel display system and method are disclosed. The system includes a display controller to generate image data. The system also includes a plurality of memristive pixel cells arranged in a plurality of rows and in a plurality of columns. Each of the plurality of memristive pixel cells includes a memristive device to control a respective pixel associated with the flat panel display based on the image data.
摘要翻译： 公开了一种平板显示系统和方法。 该系统包括用于生成图像数据的显示控制器。 该系统还包括以多行和多列排列的多个忆阻像素单元。 多个忆忆像素单元中的每一个包括基于图像数据来控制与平板显示器相关联的各个像素的忆阻设备。
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公开(公告)号：US08546785B2
公开(公告)日：2013-10-01
申请号：US12751977
申请日：2010-03-31
申请人： Jianhua Yang , Feng Miao , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
发明人： Jianhua Yang , Feng Miao , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
IPC分类号： H01L27/24
CPC分类号： H01L45/08 , H01L27/2463 , H01L45/12 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/16
摘要： A memristive device includes a first electrode and a second electrode crossing the first electrode at a non-zero angle. An active region is disposed between the first and second electrodes. The active region has defects therein. Graphene or graphite is disposed between the active region and the first electrode and/or between the active region and the second electrode.
摘要翻译： 忆阻器包括第一电极和第二电极，其以非零角度与第一电极交叉。 有源区设置在第一和第二电极之间。 活性区域有缺陷。 石墨烯或石墨设置在有源区和第一电极之间和/或有源区和第二电极之间。
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公开(公告)号：US20130175497A1
公开(公告)日：2013-07-11
申请号：US13822227
申请日：2010-09-27
CPC分类号： H01L45/14 , G11C13/0007 , G11C2213/15 , G11C2213/32 , G11C2213/52 , H01L27/2463 , H01L27/2472 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/149 , H01L45/1608
摘要： A memristor includes a first electrode formed of a first metal, a second electrode formed of a second material, wherein the second material comprises a different material from the first metal, and a switching layer positioned between the first electrode and the second electrode. The switching layer is formed of a composition of a first material comprising the first metal and a second nonmetal material, in which the switching layer is in direct contact with the first electrode and in which at least one conduction channel is configured to be formed in the switching layer from an interaction between the first metal and the second nonmetal material.
摘要翻译： 忆阻器包括由第一金属形成的第一电极，由第二材料形成的第二电极，其中第二材料包括与第一金属不同的材料，以及位于第一电极和第二电极之间的开关层。 开关层由包括第一金属和第二非金属材料的第一材料的组合物形成，其中开关层与第一电极直接接触，并且其中至少一个导电沟道被构造成形成在第一金属 开关层从第一金属和第二非金属材料之间的相互作用。
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公开(公告)号：US08450711B2
公开(公告)日：2013-05-28
申请号：US13142582
申请日：2009-01-26
IPC分类号： H01L29/02
CPC分类号： G11C13/0007 , G11C13/003 , G11C2213/31 , G11C2213/51 , G11C2213/55 , G11C2213/56 , G11C2213/72 , G11C2213/73 , G11C2213/74 , H01L27/2463 , H01L29/8615 , H01L45/08 , H01L45/1233 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/148
摘要： Various embodiments of the present invention are directed to electronic devices, which combine reconfigurable diode rectifying states with nonvolatile memristive switching. In one aspect, an electronic device (210,230,240) comprises an active region (212) sandwiched between a first electrode (104) and a second electrode (106). The active region includes two or more semiconductor layers and at least one dopant that is capable of being selectively positioned within the active region to control the flow of charge carriers through the device.
摘要翻译： 本发明的各种实施例涉及将可重构二极管整流状态与非易失性忆阻转换组合的电子器件。 一方面，电子设备（210,230,240）包括夹在第一电极（104）和第二电极（106）之间的有源区（212）。 有源区域包括两个或更多个半导体层和至少一个能够选择性地定位在有源区域内以控制电荷载流子通过该器件的流动的掺杂剂。
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公开(公告)号：US20130114329A1
公开(公告)日：2013-05-09
申请号：US13811023
申请日：2010-08-30
IPC分类号： G11C13/00
CPC分类号： G11C13/0007 , G11C5/063 , G11C13/0002 , G11C13/004 , G11C13/0069 , G11C13/02 , G11C2013/0073 , G11C2213/71 , G11C2213/77 , H01L27/101 , H01L27/1021 , H01L27/24 , H01L27/2409 , H01L27/2463 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/147
摘要： A multilayer crossbar memory array includes a number of layers. Each layer includes a top set of parallel lines, a bottom set of parallel lines intersecting the top set of parallel lines, and memory elements disposed at intersections between the top set of parallel lines and the bottom set of parallel lines. A top set of parallel lines from one of the layers is a bottom set of parallel lines for an adjacent one of the layers.
摘要翻译： 多层交叉存储器阵列包括多个层。 每个层包括顶层平行线，与顶层平行线相交的平行线的底部集合，以及设置在顶部平行线组和底部平行线之间的交叉处的存储元件。 来自一个层的顶层平行线是用于相邻层之间的一组平行线。
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公开(公告)号：US20130106462A1
公开(公告)日：2013-05-02
申请号：US13281438
申请日：2011-10-26
IPC分类号： H03K19/177
CPC分类号： H03K19/177
摘要： A field-programmable analog array (FPAA) includes a digital signal routing network, an analog signal routing network, switch elements to interconnect the digital signal routing network with the analog signal routing network, and a configurable analog block (CAB) connected to the analog signal routing network and having a programmable resistor array. The switch elements are implemented via digital memristors, the programmable resistor array is implemented via analog memristors, and/or antifuses within one or more of the digital signal routing network and the analog signal routing network are implemented via digital memristors.
摘要翻译： 现场可编程模拟阵列（FPAA）包括数字信号路由网络，模拟信号路由网络，将数字信号路由网络与模拟信号路由网络互连的开关元件，以及连接到模拟信号的可配置模拟块（CAB） 信号路由网络并具有可编程电阻器阵列。 开关元件通过数字忆阻器实现，可编程电阻器阵列通过模拟忆阻器实现，并且/或数字信号路由网络和模拟信号路由网络内的反熔丝通过数字忆阻器来实现。
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公开(公告)号：US08324976B2
公开(公告)日：2012-12-04
申请号：US13078595
申请日：2011-04-01
申请人： Julien Borghetti , Matthew D Pickett , Gilberto Medeiros Ribeiro , Wei Yi , Jianhua Yang , Minxian Max Zhang
发明人： Julien Borghetti , Matthew D Pickett , Gilberto Medeiros Ribeiro , Wei Yi , Jianhua Yang , Minxian Max Zhang
IPC分类号： H03B7/00
CPC分类号： H03B7/00
摘要： Circuitry is provided that closely emulates biological neural responses. Two astable multivibrator circuits (AMCs), each including a negative differential resistance device, are coupled in series-circuit relationship. Each AMC is characterized by a distinct voltage-dependant time constant. The circuitry exhibits oscillations in electrical current when subjected to a voltage equal to or greater than a threshold value. Various oscillating waveforms can be produced in accordance with voltages applied to the circuitry.
摘要翻译： 提供了密切仿效生物神经反应的电路。 两个不连续的多谐振荡器电路（AMC），每个包括一个负差分电阻器件，以串联电路的关系耦合。 每个AMC的特征在于不同的电压相关时间常数。 当经受等于或大于阈值的电压时，该电路表现出电流的振荡。 可以根据施加到电路的电压来产生各种振荡波形。
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公开(公告)号：US20120280196A1
公开(公告)日：2012-11-08
申请号：US13383994
申请日：2010-01-29
IPC分类号： H01L45/00
CPC分类号： H01L45/146 , H01L27/2472 , H01L45/08 , H01L45/1233 , H01L45/1608 , H01L45/1641
摘要： An electroforming free memristor (100) includes a first electrode (102), a second electrode (104) spaced from the first electrode, and a switching layer (110) positioned between the first electrode and the second electrode. The switching layer is formed of a matrix of a switching material (112) and reactive particles (114) configured to react with the switching material during a fabrication process of the memristor to form one or more conductance channels 120 in the switching layer.
摘要翻译： 无电存储器（100）包括第一电极（102），与第一电极间隔开的第二电极（104）和位于第一电极和第二电极之间的开关层（110）。 开关层由开关材料（112）和反应性颗粒（114）的矩阵形成，反应性颗粒（114）构造成在忆阻器的制造过程期间与开关材料反应，以在开关层中形成一个或多个导电通道120。
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公开(公告)号：US08264868B2
公开(公告)日：2012-09-11
申请号：US12911283
申请日：2010-10-25
IPC分类号： G11C11/00
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/003 , G11C13/0069 , G11C2013/0073 , G11C2213/76 , H01L27/2463 , H01L45/12 , H01L45/1233
摘要： A memory array with Metal-Insulator Transition (MIT) switching devices includes a set of row lines intersecting a set of column lines and a memory element disposed at an intersection between one of the row lines and one of the column lines. The memory element includes a switching layer in series with an MIT material. A method of accessing a target memory element within a memory array includes applying half of an access voltage to a row line connected to the target memory element, the target memory element comprising a switching layer in series with an MIT material, and applying an inverted half of the access voltage to a column line connected to the target memory element.
摘要翻译： 具有金属绝缘体转变（MIT）切换装置的存储器阵列包括与一组列线相交的一行行线和设置在一行行列与一列列线之间的交叉处的存储元件。 存储元件包括与MIT材料串联的开关层。 一种访问存储器阵列内的目标存储器元件的方法包括将一半存取电压施加到连接到目标存储器元件的行线，该目标存储器元件包括与MIT材料串联的开关层，并施加倒置的一半 对连接到目标存储元件的列线的存取电压。
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