MULTI-AXIS MEMS RATE SENSOR DEVICE
    11.
    发明申请
    MULTI-AXIS MEMS RATE SENSOR DEVICE 审中-公开
    多轴MEMS速率传感器器件

    公开(公告)号:US20140311247A1

    公开(公告)日:2014-10-23

    申请号:US14163789

    申请日:2014-01-24

    Applicant: mCube Inc.

    CPC classification number: G01C19/574

    Abstract: A MEMS rate sensor device. In an embodiment, the sensor device includes a MEMS rate sensor configured overlying a CMOS substrate. The MEMS rate sensor can include a driver set, with four driver elements, and a sensor set, with six sensing elements, configured for 3-axis rotational sensing. This sensor architecture allows low damping in driving masses and high damping in sensing masses, which is ideal for a MEMS rate sensor design. Low driver damping is beneficial to MEMS rate power consumption and performance, with low driving electrical potential to achieve high oscillation amplitude.

    Abstract translation: MEMS速率传感器装置。 在一个实施例中,传感器装置包括配置在CMOS衬底上的MEMS速率传感器。 MEMS速率传感器可以包括具有四个驱动器元件的驱动器组和具有六个感测元件的传感器组,用于三轴旋转感测。 该传感器结构允许驱动质量中的低阻尼和感测质量中的高阻尼,这对于MEMS速率传感器设计是理想的。 低驱动器阻尼有利于MEMS速率功耗和性能,具有低驱动电位以实现高振荡幅度。

    METHOD TO PACKAGE MULTIPLE MEMS SENSORS AND ACTUATORS AT DIFFERENT GASES AND CAVITY PRESSURES
    12.
    发明申请
    METHOD TO PACKAGE MULTIPLE MEMS SENSORS AND ACTUATORS AT DIFFERENT GASES AND CAVITY PRESSURES 有权
    在不同气体和气压下封装多个MEMS传感器和执行器的方法

    公开(公告)号:US20140227816A1

    公开(公告)日:2014-08-14

    申请号:US14102465

    申请日:2013-12-10

    Applicant: mCube Inc.

    Abstract: A method for fabricating a multiple MEMS device. A semiconductor substrate having a first and second MEMS device, and an encapsulation wafer with a first cavity and a second cavity, which includes at least one channel, can be provided. The first MEMS can be encapsulated within the first cavity and the second MEMS device can be encapsulated within the second cavity. These devices can be encapsulated within a provided first encapsulation environment at a first air pressure, encapsulating the first MEMS device within the first cavity at the first air pressure. The second MEMS device within the second cavity can then be subjected to a provided second encapsulating environment at a second air pressure via the channel of the second cavity.

    Abstract translation: 一种用于制造多个MEMS器件的方法。 可以提供具有第一和第二MEMS器件的半导体衬底以及包括至少一个通道的具有第一腔和第二腔的封装晶片。 第一MEMS可以封装在第一腔内,并且第二MEMS器件可被封装在第二腔内。 这些装置可以以第一空气压力封装在所提供的第一封装环境内,在第一空气压力下将第一MEMS装置封装在第一空腔内。 然后可以在第二空腔内的第二MEMS装置经由第二空腔的通道在第二空气压力下经受所提供的第二封装环境。

    Distributed MEMS devices time synchronization methods and system
    14.
    发明授权
    Distributed MEMS devices time synchronization methods and system 有权
    分布式MEMS器件的时间同步方法和系统

    公开(公告)号:US09174838B2

    公开(公告)日:2015-11-03

    申请号:US14102465

    申请日:2013-12-10

    Applicant: mCube Inc.

    Abstract: A method for fabricating a multiple MEMS device. A semiconductor substrate having a first and second MEMS device, and an encapsulation wafer with a first cavity and a second cavity, which includes at least one channel, can be provided. The first MEMS can be encapsulated within the first cavity and the second MEMS device can be encapsulated within the second cavity. These devices can be encapsulated within a provided first encapsulation environment at a first air pressure, encapsulating the first MEMS device within the first cavity at the first air pressure. The second MEMS device within the second cavity can then be subjected to a provided second encapsulating environment at a second air pressure via the channel of the second cavity.

    Abstract translation: 一种用于制造多个MEMS器件的方法。 可以提供具有第一和第二MEMS器件的半导体衬底以及包括至少一个通道的具有第一腔和第二腔的封装晶片。 第一MEMS可以封装在第一腔内,并且第二MEMS器件可被封装在第二腔内。 这些装置可以以第一空气压力封装在所提供的第一封装环境内,在第一空气压力下将第一MEMS装置封装在第一空腔内。 然后可以在第二空腔内的第二MEMS装置经由第二空腔的通道在第二空气压力下经受所提供的第二封装环境。

    SUBSTRATE CURVATURE COMPENSATION METHODS AND APPARATUS
    15.
    发明申请
    SUBSTRATE CURVATURE COMPENSATION METHODS AND APPARATUS 有权
    基板曲面补偿方法和装置

    公开(公告)号:US20130186171A1

    公开(公告)日:2013-07-25

    申请号:US13745723

    申请日:2013-01-18

    Applicant: mCube Inc.

    Abstract: A method for providing acceleration data with reduced substrate-displacement bias includes receiving in an accelerometer an external acceleration, determining the acceleration data with reduced substrate displacement bias in a compensation portion in response to a first and a second displacement indicators from a MEMS transducer, and, in response to substrate compensation factors from a MEMS compensation portion, outputting the acceleration data with reduced substrate displacement bias, wherein the first displacement indicator and the second displacement indicator are determined by the MEMS transducer relative to a substrate in response to the external acceleration and to a substrate displacement, and wherein the substrate compensation factors are determined by the MEMS compensation portion relative to the substrate in response to the substrate displacement.

    Abstract translation: 用于提供具有减小的衬底位移偏置的加速度数据的方法包括在加速度计中接收外部加速度,响应于来自MEMS换能器的第一和第二位移指示器,在补偿部分中减小衬底位移偏置来确定加速度数据,以及 响应于来自MEMS补偿部分的衬底补偿因子,以减小的衬底位移偏压输出加速度数据,其中第一位移指示器和第二位移指示器响应于外部加速度由MEMS换能器相对于衬底确定,并且 到衬底位移,并且其中衬底补偿因子响应于衬底位移由MEMS补偿部分相对于衬底确定。

Patent Agency Ranking