公开(公告)号：US08173554B2

公开(公告)日：2012-05-08

申请号：US12901323

申请日：2010-10-08

申请人： Woo Jin Lee ,  Kuo-Wei Hong ,  Akira Shimizu ,  Deakyun Jeong

发明人： Woo Jin Lee ,  Kuo-Wei Hong ,  Akira Shimizu ,  Deakyun Jeong

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/3185 ,  C23C16/345 ,  C23C16/4554 ,  C23C16/5096 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31111 ,  H01L21/3141

摘要： A method of forming dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semiconductor substrate is placed; introducing a hydrogen-containing silicon precursor in pulses of less than 1.0-second duration into the reaction space wherein the reactive gas and the rare gas are introduced; exiting a plasma in pulses of less than 1.0-second duration immediately after the silicon precursor is shut off; and maintaining the reactive gas and the rare gas as a purge of less than 2.0-second duration.

摘要翻译： 通过等离子体增强原子层沉积（PEALD）在半导体衬底上形成具有Si-N键的电介质膜的方法包括：将含氮和氢的反应气体和稀有气体引入到半导体衬底 被放置 将具有小于1.0秒持续时间脉冲的含氢硅前体引入引入反应气体和稀有气体的反应空间中; 在硅前驱物被切断之后立即以小于1.0秒持续时间的脉冲离开等离子体; 并且将反应气体和稀有气体保持为小于2.0秒持续时间的吹扫。

公开(公告)号：US08142862B2

公开(公告)日：2012-03-27

申请号：US12553759

申请日：2009-09-03

申请人： Woo Jin Lee ,  Akira Shimizu

发明人： Woo Jin Lee ,  Akira Shimizu

IPC分类号： C23C8/00 ,  C23C16/00 ,  H05H1/24

CPC分类号： H01L21/3185 ,  C23C16/345 ,  C23C16/45523 ,  C23C16/5096 ,  H01L21/31111

摘要： A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and an additive gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film having Si—N bonds on the substrate.

摘要翻译： 通过等离子体增强化学气相沉积（PECVD）在半导体衬底上形成具有Si-N键的共形电介质膜的方法包括：将含氮和氢的反应气体和添加气体引入反应空间内， 底物放置; 向反应空间施加RF功率; 并将含氢的硅前体以脉冲方式引入到等离子体被激发的反应空间中，从而在衬底上形成具有Si-N键的保形电介质膜。

公开(公告)号：US08053036B2

公开(公告)日：2011-11-08

申请号：US12039699

申请日：2008-02-28

申请人： Satoshi Takahashi

发明人： Satoshi Takahashi

IPC分类号： H05H1/24 ,  H01L21/306 ,  H01L21/44 ,  C23C16/00

CPC分类号： H01J37/32541 ,  C23C16/45565 ,  H01J37/3244

摘要： A method of designing a shower plate for a plasma CVD apparatus includes (a) providing a shower plate having a convex surface configured by a convex equation; (b) forming a film on a wafer using the shower plate in the plasma CVD apparatus; (c) determining a distribution of thickness of the film formed on the wafer by dividing a diametrical cross section of the film into multiple regions; (d) determining at least one secondary equation; and (e) designing a surface configuration of the shower plate by overlaying the secondary equation on the convex equation.

摘要翻译： 设置等离子体CVD装置用喷淋板的方法包括：（a）提供具有由凸方程构成的凸面的喷淋板; （b）使用等离子体CVD装置中的喷淋板在晶片上形成膜; （c）通过将膜的直径截面分成多个区域来确定在晶片上形成的膜的厚度分布; （d）确定至少一个次方程; 和（e）通过将二次方程叠加在凸方程上来设计淋浴板的表面构造。

公开(公告)号：US08003174B2

公开(公告)日：2011-08-23

申请号：US11955766

申请日：2007-12-13

申请人： Atsuki Fukazawa ,  Woo Jin Lee ,  Nobuo Matsuki

发明人： Atsuki Fukazawa ,  Woo Jin Lee ,  Nobuo Matsuki

IPC分类号： H05H1/24

CPC分类号： C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/02315 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/31612

摘要： A method of forming a dielectric film, includes: introducing a siloxane gas essentially constituted by Si, O, C, and H and a silazane gas essentially constituted by Si, N, H, and optionally C into a reaction chamber where a substrate is placed; depositing a siloxane-based film including Si—N bonds on the substrate by plasma reaction; and annealing the siloxane-based film on the substrate in an annealing chamber to remove Si—N bonds from the film.

摘要翻译： 形成电介质膜的方法包括：将基本上由Si，O，C和H构成的硅氧烷气体和基本上由Si，N，H和任选的C组成的硅氮烷气体引入放置基板的反应室中 ; 通过等离子体反应在衬底上沉积包含Si-N键的硅氧烷基膜; 并在退火室中退火基板上的硅氧烷基膜，以从膜中除去Si-N键。

公开(公告)号：US07993462B2

公开(公告)日：2011-08-09

申请号：US12051769

申请日：2008-03-19

申请人： Satoshi Takahashi

发明人： Satoshi Takahashi

IPC分类号： C23C16/00 ,  C23C16/50 ,  C23F1/00 ,  H01L21/306

CPC分类号： C23C16/4581 ,  C23C16/52

摘要： A substrate-supporting device has a top surface for placing a substrate thereon composed of a plurality of surfaces separated from each other and defined by a continuous concavity being in gas communication with at least one through-hole passing through the substrate-supporting device in its thickness direction. The continuous concavity is adapted to allow gas to flow in the continuous concavity and through the through-hole under a substrate placed on the top surface.

摘要翻译： 基板支撑装置具有用于放置其上的基板的顶表面，该基板由多个彼此分离的表面构成，并且由连续的凹部限定，该连续凹部与至少一个穿过基板支撑装置的通孔气体连通 厚度方向。 连续凹部适于允许气体在连续的凹部中流动，并且通过穿过位于顶表面上的基底下方的通孔。

公开(公告)号：US07972961B2

公开(公告)日：2011-07-05

申请号：US12248741

申请日：2008-10-09

申请人： Toru Sugiyama ,  Ryu Nakano

发明人： Toru Sugiyama ,  Ryu Nakano

IPC分类号： H01L21/44 ,  H01L21/20 ,  C23C16/00

CPC分类号： C23C16/4405 ,  H01J37/32743

摘要： A method of processing semiconductor substrates includes: depositing a film on a substrate in a reaction chamber; evacuating the reaction chamber without purging the reaction chamber; opening a gate valve and replacing the substrate with a next substrate via the transfer chamber wherein the pressure of the transfer chamber is controlled to be higher than that of the reaction chamber before and while the gate valve is opened; repeating the above steps and removing the substrate from the reaction chamber; and purging and evacuating the reaction chamber, and cleaning the reaction chamber with a cleaning gas.

摘要翻译： 一种处理半导体衬底的方法包括：在反应室中的衬底上沉积膜; 抽空反应室而不清洗反应室; 打开闸阀并经由传送室用下一个基板代替基板，其中传送室的压力在闸阀打开之前和之后被控制为高于反应室的压力; 重复上述步骤并从反应室中除去基材; 并清洗并抽空反应室，并用清洁气体清洗反应室。

公开(公告)号：US20110159202A1

公开(公告)日：2011-06-30

申请号：US12953870

申请日：2010-11-24

申请人： Kiyohiro Matsushita ,  Yosuke Kimura ,  Ippei Yanagisawa

发明人： Kiyohiro Matsushita ,  Yosuke Kimura ,  Ippei Yanagisawa

IPC分类号： C08J7/18

CPC分类号： H01L21/67115 ,  B05D1/60 ,  B05D3/061 ,  B05D7/22 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02203 ,  H01L21/3105 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76831

摘要： A method for sealing pores at a surface of a dielectric layer formed on a substrate, includes: providing a substrate on which a dielectric layer having a porous surface is formed as an outermost layer; placing the substrate in an evacuatable chamber; irradiating the substrate with UV light in an atmosphere of hydrocarbon and/or oxy-hydrocarbon gas; sealing pores at the porous surface of the dielectric layer as a result of the irradiation; and continuously irradiating the substrate with UV light in the atmosphere of hydrocarbon and/or oxy-hydrocarbon gas until a protective film having a desired thickness is formed on the dielectric layer as a result of the irradiation.

摘要翻译： 一种在基板上形成的电介质层的表面密封孔的方法，包括：提供其上形成具有多孔表面的电介质层作为最外层的基板; 将基板放置在可抽空的室中; 在烃和/或氧烃气体的气氛中用UV光照射基板; 作为照射的结果在电介质层的多孔表面处密封孔; 并在烃和/或氧 - 烃气体的气氛中用紫外线持续照射基板，直到作为照射的结果在电介质层上形成具有所需厚度的保护膜。

公开(公告)号：US07945345B2

公开(公告)日：2011-05-17

申请号：US12187249

申请日：2008-08-06

申请人： Masahiro Takizawa ,  Tsutomu Makino

发明人： Masahiro Takizawa ,  Tsutomu Makino

IPC分类号： G06F19/00 ,  G06F11/00

CPC分类号： G06F11/0736 ,  G05B19/0428 ,  G06F11/0757

摘要： A semiconductor manufacturing apparatus includes a first program on a controller and a second program on an interface board between the controller and controlled devices. Both of the programs update their own counters and exchange their counter values with each other, serving as bi-directional software watchdog timers (WDT). If a counter value of the first program on the controller sent to the second program on the interface board is determined to be abnormal by the second program, the second program on the interface board sends commands to the controlled devices to terminate output so that the apparatus is navigated to a safe mode. The first program similarly monitors the counter values of the second program for anomalies. This bi-directional software WDT can be implemented as add-on to software programs that already exist in the controller and the interface board, therefore, this implementation does not incur extra cost of hardware of the apparatus.

摘要翻译： 半导体制造装置包括控制器上的第一程序和控制器与受控设备之间的接口板上的第二程序。 两个程序都更新自己的计数器，并将其计数器值彼此交换，作为双向软件看门狗定时器（WDT）。 如果通过第二程序将发送到接口板上的第二程序的控制器上的第一程序的计数器值确定为异常，则接口板上的第二程序向受控设备发送命令以终止输出，使得设备 被导航到安全模式。 第一个程序类似地监视第二个程序的异常计数器值。 该双向软件WDT可以实现为控制器和接口板中已经存在的软件程序的附加组件，因此，该实现不会招致设备硬件的额外成本。

公开(公告)号：US20110014795A1

公开(公告)日：2011-01-20

申请号：US12832739

申请日：2010-07-08

申请人： Woo Jin Lee ,  Kuo-Wei Hong ,  Akira Shimizu

发明人： Woo Jin Lee ,  Kuo-Wei Hong ,  Akira Shimizu

IPC分类号： H01L21/318

CPC分类号： H01L21/3141 ,  C23C16/345 ,  C23C16/45538 ,  C23C16/5096 ,  C23C16/52 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3185

摘要： A method of forming stress-tuned dielectric films having Si—N bonds on a semiconductor substrate by modified plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen-and hydrogen-containing reactive gas and an additive gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space using a high frequency RF power source and a low frequency RF power source; and introducing a hydrogen-containing silicon precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a stress-tuned dielectric film having Si—N bonds on the substrate.

摘要翻译： 通过改进的等离子体增强原子层沉积（PEALD）在半导体衬底上形成具有Si-N键的应力调谐电介质膜的方法包括：将含氮和氢的反应气体和添加气体引入到反应空间内 放置半导体衬底; 使用高频RF电源和低频RF电源将RF功率应用于反应空间; 并将脉冲中的含氢硅前体引入反应空间，其中等离子体被激发，从而在衬底上形成具有Si-N键的应力调谐电介质膜。

公开(公告)号：US07832353B2

公开(公告)日：2010-11-16

申请号：US12198004

申请日：2008-08-25

申请人： Masahiro Takizawa ,  Teruhide Nishino

发明人： Masahiro Takizawa ,  Teruhide Nishino

IPC分类号： B05C11/00

CPC分类号： H01L21/67201 ,  H01L21/67253

摘要： A semiconductor manufacturing apparatus includes a processing unit for processing at least one wafer; a loading/unloading unit for loading/unloading at least wafer; an input/output chamber for taking in a processed wafer from the processing unit and taking out the processed wafer to the loading/unloading unit, and taking in a unprocessed wafer from the loading/unloading unit and taking out the unprocessed wafer to the reaction unit; and a wafer inspection device for inspecting the processed wafer through a light transmittable top portion of the input/output chamber, through which light is transmittable, while the processed wafer is temporarily placed in the input/output chamber.

摘要翻译： 半导体制造装置包括用于处理至少一个晶片的处理单元; 至少装载/卸载晶片的装载/卸载单元; 输入/输出室，用于从处理单元接收经处理的晶片并将加工的晶片取出到装载/卸载单元，并从加载/卸载单元接收未加工的晶片，并将未处理的晶片取出到反应单元 ; 以及晶片检查装置，用于通过输入/输出室的可透光顶部检查经处理的晶片，光可透过该晶片检测装置，同时处理的晶片临时放置在输入/输出室中。