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    Apparatus, System, And Method For Matching Patterns With An Ultra Fast Check Engine Based On Flash Cells
    11.
    发明申请
    Apparatus, System, And Method For Matching Patterns With An Ultra Fast Check Engine Based On Flash Cells 有权
    基于闪存单元的超快速检测引擎匹配模式的装置，系统和方法

    公开(公告)号：US20120143554A1

    公开(公告)日：2012-06-07

    申请号：US13309475

    申请日：2011-12-01

    Applicant: Bertrand F. Cambou ,  Neal Berger ,  Mourad El Baraji

    Inventor： Bertrand F. Cambou ,  Neal Berger ,  Mourad El Baraji

    IPC: G06F19/00

    CPC classification number: G11C15/046 ,  G11C16/0483

    Abstract: A check engine includes a plurality of comparators, each including a plurality of flash cells, where each of the plurality of comparators is configured to store at least one reference bit included in a set of reference bits, and includes an input for presenting at least one target bit included in a set of target bits. Each of the plurality of comparators is configured to produce an output representing a level of matching between the at least one target bit and the at least one reference bit. The check engine is configured such that the outputs of the plurality of comparators are combined to produce a combined output. The check engine is configured to determine that the set of target bits matches the set of reference bits based on the combined output of the plurality of comparators.

    Abstract translation: 检查引擎包括多个比较器，每个比较器包括多个闪存单元，其中多个比较器中的每一个被配置为存储包括在一组参考位中的至少一个参考位，并且包括用于呈现至少一个 目标位包含在一组目标位中。 多个比较器中的每一个被配置为产生表示至少一个目标位与至少一个参考位之间的匹配水平的输出。 检查引擎被配置为使得多个比较器的输出被组合以产生组合输出。 检查引擎被配置为基于多个比较器的组合输出来确定目标比特的集合与参考比特集匹配。

    Magnetic random access memory cells with isolating liners
    16.
    发明授权
    Magnetic random access memory cells with isolating liners 有权
    具有隔离衬垫的磁性随机存取存储单元

    公开(公告)号：US09059400B2

    公开(公告)日：2015-06-16

    申请号：US14203362

    申请日：2014-03-10

    Applicant: Crocus Technology Inc.

    Inventor： Dafna Beery ,  Jason Reid ,  Jong Shin ,  Jean Pierre Nozieres ,  Olivier Joubert

    IPC: H01L27/00 ,  H01L43/12 ,  H01L27/22 ,  H01L43/08

    CPC classification number: H01L43/12 ,  H01L27/222 ,  H01L43/08

    Abstract: A manufacturing method to form a memory device includes forming a hard mask on a magnetic stack. A first magnetic stack etch is performed to form exposed magnetic layers. A liner is applied to the exposed magnetic layers to form protected magnetic layers. A second magnetic stack etch forms a magnetic random access memory (MRAM) cell, where the liner prevents shunting between the protected magnetic layers.

    Abstract translation: 形成存储器件的制造方法包括在磁性堆叠上形成硬掩模。 执行第一磁栈蚀刻以形成暴露的磁性层。 将衬垫施加到暴露的磁性层以形成受保护的磁性层。 第二磁栈蚀刻形成磁性随机存取存储器（MRAM）单元，其中衬垫防止受保护的磁层之间的分流。

    Magnetic Logic Units Configured to Measure Magnetic Field Direction
    17.
    发明申请
    Magnetic Logic Units Configured to Measure Magnetic Field Direction 有权

    公开(公告)号：US20150077098A1

    公开(公告)日：2015-03-19

    申请号：US14552326

    申请日：2014-11-24

    Applicant: Crocus Technology Inc.

    Inventor： Bertrand F. Cambou ,  Douglas J. Lee ,  Ken Mackay ,  Barry Hoberman

    IPC: G01R33/09 ,  G01B7/30

    CPC classification number: G01D5/12 ,  G01B7/30 ,  G01C17/02 ,  G01D5/16 ,  G01R33/0029 ,  G01R33/096 ,  G01R33/098 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

    Abstract: An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.

    Magnetic random access memory cells having improved size and shape characteristics
    18.
    发明授权
    Magnetic random access memory cells having improved size and shape characteristics 有权
    具有改进尺寸和形状特征的磁性随机存取存储器单元

    公开(公告)号：US08962493B2

    公开(公告)日：2015-02-24

    申请号：US12966865

    申请日：2010-12-13

    Applicant: Amitay Levi ,  Dafna Beery

    Inventor： Amitay Levi ,  Dafna Beery

    IPC: H01L27/22 ,  H01L21/027 ,  H01L43/12 ,  H01L43/08 ,  H01L21/033

    CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L27/222 ,  H01L43/08

    Abstract: A manufacturing method to form a memory device includes: (1) forming a dielectric layer adjacent to a magnetic stack; (2) forming an opening in the dielectric layer; (3) applying a hard mask material adjacent to the dielectric layer to form a pillar disposed in the opening of the dielectric layer; and (4) using the pillar as a hard mask, patterning the magnetic stack to form a MRAM cell.

    Abstract translation: 形成存储器件的制造方法包括：（1）形成与磁性堆叠相邻的电介质层; （2）在电介质层中形成开口; （3）在电介质层附近施加硬掩模材料以形成布置在电介质层的开口中的柱; 和（4）使用该柱作为硬掩模，图案化磁性堆叠以形成MRAM单元。

    Magnetic tunnel junction structure
    19.
    发明授权
    Magnetic tunnel junction structure 有权
    磁隧道结结构

    公开(公告)号：US08907390B2

    公开(公告)日：2014-12-09

    申请号：US12944663

    申请日：2010-11-11

    Applicant: Jason Reid

    Inventor： Jason Reid

    IPC: H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01F10/32 ,  G11C11/16 ,  B82Y25/00 ,  H01L43/08

    CPC classification number: G11C11/16 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01L43/08

    Abstract: Disclosed herein is a thermally-assisted magnetic tunnel junction structure including a thermal barrier. The thermal barrier is composed of a cermet material in a disordered form such that the thermal barrier has a low thermal conductivity and a high electric conductivity. Compared to conventional magnetic tunnel junction structures, the disclosed structure can be switched faster and has improved compatibility with standard semiconductor fabrication processes.

    Abstract translation: 本文公开了包括热障的热辅助磁隧道结结构。 热障由无定形形式的金属陶瓷材料构成，使得热障具有低导热性和高导电性。 与传统的磁性隧道结结构相比，所公开的结构可以更快地切换并改善与标准半导体制造工艺的兼容性。

    Memory array including magnetic random access memory cells and oblique field lines
    20.
    发明授权
    Memory array including magnetic random access memory cells and oblique field lines 有权
    存储阵列包括磁性随机存取存储单元和斜场线

    公开(公告)号：US08587079B2

    公开(公告)日：2013-11-19

    申请号：US13572566

    申请日：2012-08-10

    Applicant: Bertrand F. Cambou ,  Douglas J. Lee ,  Anthony J. Tether ,  Barry Hoberman

    Inventor： Bertrand F. Cambou ,  Douglas J. Lee ,  Anthony J. Tether ,  Barry Hoberman

    IPC: H01L27/22

    CPC classification number: H01L27/228 ,  G11C5/063 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/5607

    Abstract: A memory device includes a first plurality of magnetic random access memory (MRAM) cells positioned along a first direction, and a first bit line electrically connected to the first plurality of MRAM cells, the bit line oriented in the first direction. The device includes a first plurality of field lines oriented in a second direction different from the first direction, the first plurality of field lines being spaced such that only a corresponding first one of the first plurality of MRAM cells is configurable by each of the first plurality of field lines. The device includes a second plurality of field lines oriented in a third direction different from the first direction and the second direction, the second plurality of field lines being spaced such that only a corresponding second one of the first plurality of MRAM cells is configurable by each of the second plurality of field lines.

    Abstract translation: 存储器件包括沿着第一方向定位的第一多个磁性随机存取存储器（MRAM）单元，以及电连接到第一多个MRAM单元的第一位线，该位线沿第一方向定向。 所述装置包括沿与第一方向不同的第二方向定向的第一多个场线，所述第一多个场线间隔开，使得仅第一多个MRAM单元中的对应的第一个MRAM单元可由第一多个MRAM单元中的每一个配置 的现场线。 该装置包括在与第一方向和第二方向不同的第三方向上定向的第二多个场线，第二多个场线间隔开，使得仅第一多个MRAM单元中相应的第二个MRAM单元可由每个 的第二多个场线。

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