Abstract:
Substrate support apparatus and methods are described. Motion of a substrate chuck relative to a stage mirror may be dynamically compensated by sensing a displacement of the substrate chuck relative to the stage mirror and coupling a signal proportional to the displacement in one or more feedback loops with Z stage actuators and/or XY stage actuators coupled to the stage mirror. Alternatively, a substrate support apparatus may include a Z stage plate a stage mirror, one or more actuators attached to the Z stage plate, and a substrate chuck mounted to the stage mirror with constraints on six degrees of freedom of movement of the substrate chuck. The actuators impart movement to the Z stage in a Z direction as the Z stage plate is scanned in a plane perpendicular to the Z direction. The actuators may include force flexures having a base portion attached to the Z stage plate and a cantilever portion extending in a lateral direction from the base portion. The cantilever portion may include a parallelogram flexure coupled between the base portion and a free end of the cantilever portion.
Abstract:
One embodiment relates to a dynamic pattern generator for reflection electron beam lithography which includes conductive pixel pads, an insulative border surrounding each conductive pixel pad so as to electrically isolate the conductive pixel pads from each other, and conductive elements coupled to the conductive pixel pads for controllably applying voltages to the conductive pixel pads. The conductive pixel pads are advantageously cup shaped with a bottom portion, a sidewall portion, and an open cavity. Another embodiment relates to a pattern generating apparatus which includes a well structure with sidewalls and a cavity configured above each conductive pixel pad. The sidewalls may include alternating layers of conductive and insulative materials. Other embodiments, aspects and feature are also disclosed.
Abstract:
One embodiment relates to a solid-state charged-particle detector. The detector includes a PIN diode and a conductive coating on the front-side of the PIN diode, wherein the front-side receives incident charged particles to be detected. In addition, the detector includes a metal layer on the backside of the PIN diode and electrical connections to the metal layer and to the conductive coating. Other embodiment are also disclosed.
Abstract:
Methods and apparatus for imaging a structure and a related processor-readable medium are disclosed. A surface of a substrate (or a portion thereof) is exposed to a gas composition. The gas composition includes one or more components that etch the substrate upon activation by interaction with a beam of electrons. A beam of electrons is directed to one or more portions of the surface of the substrate that are exposed to the gas composition to etch the one or more portions. A plurality of images is obtained of the one or more portions at different instances of time as the one or more portions are etched. A three-dimensional model of one or more structures embedded within the one or more portions of the substrate is generated from the plurality of images.
Abstract:
Embodiments of the invention include an electron beam lithography device using a dynamically controllable photocathode capable of producing a patterned electron beam. One such implementation includes a dynamic pattern generator configurable to produce an electron beam having a desired image pattern impressed thereon. Such an electron beam pattern being enabled by selectively activating programmable photoemissive elements of the pattern generator. The apparatus further including an illumination source arranged to direct a light beam onto the dynamic pattern generator to produce the electron beam having the desired pattern. The electron beam being directed through associated electron optics configured to receive the electron beam from the dynamic pattern generator and direct the electron beam onto a target substrate mounted on a stage.
Abstract:
One embodiment pertains to an apparatus for reflection electron beam lithography, including at least illumination electron-optics, an electron-reflective pattern generator, projection electron-optics, a moving stage holding a target substrate, control circuitry, and a deflection system. The illumination electron-optics is configured to form an illumination electron beam. The electron-reflective pattern generator configured to generate an electron-reflective pattern of pixels and to reflect the illumination electron beam using the pattern to form a patterned electron beam. The projection electron-optics is configured to project the patterned electron beam onto the moving target substrate. The control circuitry is configured to shift the generated pattern in discrete steps in synchronization with the stage motion. The deflection system is configured to deflect said projected patterned electron beam so as to compensate for said stage motion in between discrete shifts of said generated pattern. Other features and embodiments are also disclosed.
Abstract:
A relatively high spectral bandwidth objective employed for use in imaging a specimen and method for imaging a specimen is provided. The objective includes a lens group having at least one focusing lens configured to receive light energy and form an intermediate image, at least one field lens oriented to receive the intermediate image and provide intermediate light energy, and a Mangin mirror arrangement positioned to receive the intermediate light energy and apply light energy to the specimen. The objective may provide, in certain instances, a spectral bandwidth up to approximately 193 to 266 nanometers and can provide numerical apertures in excess of 0.9. Elements are less than 100 millimeters in diameter and may fit within a standard microscope. The field lens may include more than one lens and may be formed of a material different from at least one other lens in the objective.
Abstract:
Broadband radiation may be generated by supplying a gas mixture containing hydrogen and/or deuterium and/or helium and/or neon to an enclosure, generating a plasma inside the enclosure with the gas mixture. Broadband radiation generated as a result of the plasma discharge to a substrate may be optically coupled to a substrate located outside the enclosure.
Abstract:
A relatively high spectral bandwidth objective employed for use in imaging a specimen and method for imaging a specimen is provided. The objective includes a lens group having at least one focusing lens configured to receive light energy and form focused light energy. The focused light energy forms an intermediate image. The objective further includes at least one field lens located in proximity to an intermediate image, and a catadioptric arrangement positioned to receive the intermediate light energy from the at and form controlled light energy. The catadioptric arrangement may include at least one Mangin element and can include a meniscus lens element.
Abstract:
Disclosed are techniques and apparatus are provided for determining overlay error or pattern placement error (PPE) across the field of a scanner which is used to pattern a sample, such as a semiconductor wafer or device. This determination is performed in-line on the product wafer or device. That is, the targets on which overlay or PPE measurements are performed are provided on the product wafer or device itself. The targets are either distributed across the field by placing the targets within the active area or by distributing the targets along the streets (the strips or scribe areas) which are between the dies of a field. The resulting overlay or PPE that is obtained from targets distributed across the field may then be used in a number of ways to improve the fabrication process for producing the sample. For instance, the resulting overlay or PPE may be used to more accurately predict device performance and yield, more accurately correct a deviating photolithography scanning tool, or determine wafer lot disposition.