公开(公告)号：US20060257295A1

公开(公告)日：2006-11-16

申请号：US11383642

申请日：2006-05-16

申请人： Ling Chen ,  Vincent Ku ,  Hua Chung ,  Christophe Marcadal ,  Seshadri Ganguli ,  Jenny Lin ,  Dien-Yeh Wu ,  Alan Ouye ,  Mei Chang

发明人： Ling Chen ,  Vincent Ku ,  Hua Chung ,  Christophe Marcadal ,  Seshadri Ganguli ,  Jenny Lin ,  Dien-Yeh Wu ,  Alan Ouye ,  Mei Chang

IPC分类号： B01J8/18

CPC分类号： C23C16/45544 ,  C23C16/18 ,  C23C16/34 ,  C23C16/4402 ,  C23C16/4481 ,  C23C16/4482 ,  C23C16/4487 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： Embodiments of an apparatus for generating a chemical precursor used in a vapor deposition processing system are provide which include a canister having a sidewall, a top, and a bottom forming an interior volume which is in fluid communication with an inlet port and an outlet port. The canister contains a plurality of baffles that extend from the bottom to an upper portion of the interior volume and form an extended mean flow path between the inlet port and the outlet port. In one embodiment, the baffles are contained on a prefabricated insert positioned on the bottom of the canister. In one example, an inlet tube may extend from the inlet port into the interior region and be positioned substantially parallel to the baffles. An outlet end of the inlet tube may be adapted to direct a gas flow away from the outlet port, such as towards the sidewall or top of the canister.

摘要翻译： 提供了一种用于生成在气相沉积处理系统中使用的化学前体的装置的实施例，其包括具有侧壁，顶部和底部的罐，该罐形成与入口端口和出口端口流体连通的内部容积。 罐包含多个挡板，其从内部容积的底部延伸到上部，并且在入口和出口之间形成延伸的平均流动路径。 在一个实施例中，挡板包含在位于罐底部的预制插入件上。 在一个示例中，入口管可以从入口端口延伸到内部区域中并且基本平行于挡板定位。 入口管的出口端可以适于将气流引导离开出口，例如朝向罐的侧壁或顶部。

公开(公告)号：US20040013577A1

公开(公告)日：2004-01-22

申请号：US10198727

申请日：2002-07-17

发明人： Seshadri Ganguli ,  Ling Chen ,  Vincent W. Ku

IPC分类号： B32B005/02 ,  B01J010/00 ,  B01J010/02

CPC分类号： C23C16/45544 ,  C23C16/18 ,  C23C16/34 ,  C23C16/4402 ,  C23C16/4481 ,  C23C16/4482 ,  C23C16/4487 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： A method and apparatus for generating gas for a processing system is provided. In one embodiment, an apparatus for generating gas for a processing system includes a canister having at least one baffle disposed between two ports and containing a precursor material. The precursor material is adapted to produce a gas vapor when heated to a defined temperature at a defined pressure. The baffle forces a carrier gas to travel an extended mean path between the inlet and outlet ports. In another embodiment, an apparatus for generating gas includes a canister having a tube that directs a carrier gas flowing into the canister away from a precursor material disposed within the canister.

摘要翻译： 提供了一种用于产生用于处理系统的气体的方法和装置。 在一个实施例中，一种用于产生用于处理系统的气体的装置包括：罐，其具有设置在两个端口之间的至少一个挡板并且容纳前体材料。 当在限定的压力下加热到限定的温度时，前体材料适于产生气体蒸气。 挡板迫使载气在入口和出口之间延伸平均路径。 在另一个实施例中，一种用于产生气体的装置包括一个罐，该罐具有一个管，其引导流入罐中的载气远离设置在罐内的前体材料。

公开(公告)号：US4212663A

公开(公告)日：1980-07-15

申请号：US872619

申请日：1978-01-26

申请人： Mohd A. Aslami

发明人： Mohd A. Aslami

IPC分类号： C03B37/014 ,  C03B37/018 ,  C23C16/448 ,  C23C13/12 ,  C03B19/06

CPC分类号： C23C16/4487 ,  C03B37/01413 ,  C03B37/01807 ,  C23C16/4482 ,  C03B2207/81 ,  C03B2207/85 ,  C03B2207/86

摘要： Apparatus for forming a vapor of material to be hydrolyzed and/or oxidized and entraining the vapor in a carrier gas. The source material, in liquid form, is pumped to a point in the column above a porous packing. As the liquid progresses downward through the packing, it encounters a rising countercurrent of carrier gas. The source material vaporizes and is delivered to vapor deposition by the carrier gas. The source material vaporized in the apparatus may alternatively be delivered to an externally heated tubular reactor, or to any other kind of chemical vapor deposition (CVD) reactor.

摘要翻译： 用于形成待水解和/或氧化并夹带载气中的蒸汽的材料的蒸气的装置。 液体形式的源材料被泵送到多孔填料上方的塔中的一个点上。 当液体通过包装向下进行时，它遇到载气的上升的逆流。 源材料蒸发并被载气气相沉积。 在设备中蒸发的源材料可以替代地被输送到外部加热的管状反应器或任何其它种类的化学气相沉积（CVD）反应器。

公开(公告)号：US07597758B2

公开(公告)日：2009-10-06

申请号：US11849125

申请日：2007-08-31

申请人： Ling Chen ,  Vincent W. Ku ,  Hua Chung ,  Christophe Marcadal ,  Seshadri Ganguli ,  Jenny Lin ,  Dien-Yeh Wu ,  Alan Ouye ,  Mei Chang

发明人： Ling Chen ,  Vincent W. Ku ,  Hua Chung ,  Christophe Marcadal ,  Seshadri Ganguli ,  Jenny Lin ,  Dien-Yeh Wu ,  Alan Ouye ,  Mei Chang

IPC分类号： C30B23/08

CPC分类号： C23C16/45544 ,  C23C16/18 ,  C23C16/34 ,  C23C16/4402 ,  C23C16/4481 ,  C23C16/4482 ,  C23C16/4487 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： Embodiments of the invention provide chemical precursor ampoules that may be used during vapor deposition processes. In one embodiment, an apparatus for generating a chemical precursor gas used in a vapor deposition processing system is provided which includes a canister having a sidewall, a top, and a bottom forming an interior volume and a solid precursor material at least partially contained within a lower region of the interior volume. The apparatus further contains an inlet port and an outlet port in fluid communication with the interior volume and an inlet tube connected to the inlet port and positioned to direct a carrier gas towards the sidewall and away form the outlet port. In one example, the solid precursor contains pentakis(dimethylamido) tantalum (PDMAT). In another example, the apparatus contains a plurality of baffles that form an extended mean flow path between the inlet port and the outlet port.

摘要翻译： 本发明的实施方案提供可在气相沉积工艺期间使用的化学前体安瓿。 在一个实施例中，提供了一种用于产生在气相沉积处理系统中使用的化学前体气体的装置，其包括具有侧壁，顶部和形成内部容积的底部的罐，以及固体前体材料，其至少部分地包含在 内部体积的较低区域。 该装置还包括与内部空间流体连通的入口端口和出口端口，以及连接到入口端口的入口管，并且定位成将载气朝向侧壁引导并从出口端口移开。 在一个实例中，固体前体含有五（二甲基氨基）钽（PDMAT）。 在另一示例中，该装置包含多个挡板，其在入口和出口之间形成延伸的平均流动路径。

公开(公告)号：US07588736B2

公开(公告)日：2009-09-15

申请号：US11383642

申请日：2006-05-16

申请人： Ling Chen ,  Vincent W. Ku ,  Hua Chung ,  Christophe Marcadal ,  Seshadri Ganguli ,  Jenny Lin ,  Dien-Yeh Wu ,  Alan Ouye ,  Mei Chang

发明人： Ling Chen ,  Vincent W. Ku ,  Hua Chung ,  Christophe Marcadal ,  Seshadri Ganguli ,  Jenny Lin ,  Dien-Yeh Wu ,  Alan Ouye ,  Mei Chang

IPC分类号： F27B15/08

CPC分类号： C23C16/45544 ,  C23C16/18 ,  C23C16/34 ,  C23C16/4402 ,  C23C16/4481 ,  C23C16/4482 ,  C23C16/4487 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： Embodiments of an apparatus for generating a chemical precursor used in a vapor deposition processing system are provide which include a canister having a sidewall, a top, and a bottom forming an interior volume which is in fluid communication with an inlet port and an outlet port. The canister contains a plurality of baffles that extend from the bottom to an upper portion of the interior volume and form an extended mean flow path between the inlet port and the outlet port. In one embodiment, the baffles are contained on a prefabricated insert positioned on the bottom of the canister. In one example, an inlet tube may extend from the inlet port into the interior region and be positioned substantially parallel to the baffles. An outlet end of the inlet tube may be adapted to direct a gas flow away from the outlet port, such as towards the sidewall or top of the canister.

摘要翻译： 提供了一种用于生成在气相沉积处理系统中使用的化学前体的装置的实施例，其包括具有侧壁，顶部和底部的罐，该罐形成与入口端口和出口端口流体连通的内部容积。 罐包含多个挡板，其从内部容积的底部延伸到上部，并且在入口和出口之间形成延伸的平均流动路径。 在一个实施例中，挡板包含在位于罐底部的预制插入件上。 在一个示例中，入口管可以从入口端口延伸到内部区域中并且基本平行于挡板定位。 入口管的出口端可以适于将气流引导离开出口，例如朝向罐的侧壁或顶部。

公开(公告)号：US07569191B2

公开(公告)日：2009-08-04

申请号：US12233464

申请日：2008-09-18

申请人： Seshadri Ganguli ,  Ling Chen ,  Vincent W. Ku

发明人： Seshadri Ganguli ,  Ling Chen ,  Vincent W. Ku

IPC分类号： B01D7/00

CPC分类号： C23C16/45544 ,  C23C16/18 ,  C23C16/34 ,  C23C16/4402 ,  C23C16/4481 ,  C23C16/4482 ,  C23C16/4487 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： Embodiments of the invention provide a method and an apparatus for generating a gaseous chemical precursor for a processing system. In one embodiment, an apparatus for generating the gaseous chemical precursor used in a vapor deposition processing system is provided and includes a canister having a sidewall, a top, and a bottom encompassing an interior volume therein, an inlet port and an outlet port in fluid communication with the interior volume, and an inlet tube extending from the inlet port into the canister, wherein the inlet tube contains an outlet positioned to direct a gas flow away from the outlet port and towards the sidewall of the canister.

摘要翻译： 本发明的实施方案提供了一种用于产生处理系统的气态化学前体的方法和装置。 在一个实施例中，提供了一种用于产生气相沉积处理系统中使用的气态化学前体的装置，其包括具有侧壁，顶部和底部的罐，所述底部包围其中的内部容积，流体入口端口和出口 与内部容积的连通以及从入口延伸到罐中的入口管，其中入口管包含定位成引导气流远离出口并朝向罐的侧壁的出口。

公开(公告)号：US06132518A

公开(公告)日：2000-10-17

申请号：US471398

申请日：1999-12-23

申请人： Miroslav Milinkovic ,  Rodney P. Reynolds ,  Dmitri S. Terekhov

发明人： Miroslav Milinkovic ,  Rodney P. Reynolds ,  Dmitri S. Terekhov

IPC分类号： C23C16/16 ,  C23C16/44 ,  C23C16/455 ,  C23C16/00

CPC分类号： C23C16/45593 ,  C23C16/16 ,  C23C16/4412 ,  C23C16/4487 ,  C23C16/45561

摘要： A closed loop, carbon monoxide self-contained preferably continuous process and apparatus for the production of nickel or nickel coated objects by nickel vapor deposition (NVD), comprising placing an object to be treated with nickel carbonyl in a deposition chamber; feeding a gaseous mixture of nickel carbonyl and carbon monoxide to the chamber; producing the nickel or nickel coated object and a nickel carbonyl-depleted gaseous mixture; removing nickel carbonyl from the nickel carbonyl-depleted gaseous mixture in a primary and subsequent secondary condensation unit and, preferably, a tertiary condensation unit to produce an essentially nickel carbonyl-free gas. The secondary and tertiary condensation units operably freeze out and subsequently thaw nickel carbonyl and most preferably each comprises a pair of units linked in parallel arrangement operative in alternating, alternate freeze-thaw modes. Carbon monoxide-containing gas is recycled to a nickel carbonyl reactor. The process and apparatus provides a more economic to operate, safe and more operably reliable than prior art NVD processes.

摘要翻译： 一种闭环，一氧化碳独立的优选连续的方法和用于通过镍气相沉积（NVD）生产镍或镍涂覆物体的装置，包括将待处理的物体用镍羰基放置在沉积室中; 将镍羰基和一氧化碳的气体混合物进料到所述室中; 生产镍或镍涂层物体和贫碳酸镍气体混合物; 在主要和随后的二级冷凝单元中，优选地，三级冷凝单元从贫碳酸镍的气态混合物中除去羰基镍以产生基本上不含羰基的气体。 二级和三级冷凝单元可操作地冷冻并随后使羰基羰基解冻，最优选地每一个都包含以交替的替代冻融模式并行布置的一对单元。 一氧化碳的气体被再循环到羰基镍反应器中。 该方法和装置提供比现有技术的NVD方法更经济的操作，安全和更可操作的可靠性。

公开(公告)号：US6048578A

公开(公告)日：2000-04-11

申请号：US185519

申请日：1998-11-04

申请人： Miroslav Milinkovic ,  Rodney P. Reynolds ,  Dmitri S. Terekhov

发明人： Miroslav Milinkovic ,  Rodney P. Reynolds ,  Dmitri S. Terekhov

IPC分类号： B01D53/00 ,  C22B23/06 ,  C23C16/16 ,  C23C16/44 ,  C23C16/455

CPC分类号： C23C16/45593 ,  B01D53/002 ,  C22B23/065 ,  C23C16/16 ,  C23C16/4412 ,  C23C16/4487 ,  C23C16/45561

摘要： A closed loop, carbon monoxide self-contained preferably continuous process and apparatus for the production of nickel or nickel coated objects by nickel vapor deposition (NVD), comprising placing an object to be treated with nickel carbonyl in a deposition chamber; feeding a gaseous mixture of nickel carbonyl and carbon monoxide to the chamber; producing the nickel or nickel coated object and a nickel carbonyl-depleted gaseous mixture; removing nickel carbonyl from the nickel carbonyl-depleted gaseous mixture in a primary and subsequent secondary condensation unit and, preferably, a tertiary condensation unit to produce an essentially nickel carbonyl-free gas. The secondary and tertiary condensation units operably freeze out and subsequently thaw nickel carbonyl and most preferably each comprises a pair of units linked in parallel arrangement operative in alternating, alternate freeze-thaw modes. Carbon monoxide-containing gas is recycled to a nickel carbonyl reactor. The process and apparatus provides a more economic to operate, safe and more operably reliable than prior art NVD processes.

摘要翻译： 一种闭环，一氧化碳独立的优选连续的方法和用于通过镍气相沉积（NVD）生产镍或镍涂覆物体的装置，包括将待处理的物体用镍羰基放置在沉积室中; 将镍羰基和一氧化碳的气体混合物进料到所述室中; 生产镍或镍涂层物体和贫碳酸镍气体混合物; 在主要和随后的二级冷凝单元中，优选地，三级冷凝单元从贫碳酸镍的气态混合物中除去羰基镍以产生基本上不含羰基的气体。 二级和三级冷凝单元可操作地冷冻并随后使羰基羰基解冻，最优选地每一个都包含以交替的替代冻融模式并行布置的一对单元。 一氧化碳的气体被再循环到羰基镍反应器中。 该方法和装置提供比现有技术的NVD方法更经济的操作，安全和更可操作的可靠性。

公开(公告)号：US5776255A

公开(公告)日：1998-07-07

申请号：US675843

申请日：1996-07-05

申请人： Tetsuo Asaba ,  Yasushi Kawasumi ,  Kazuaki Ohmi ,  Yasuhiro Sekine ,  Yukihiro Hayakawa

发明人： Tetsuo Asaba ,  Yasushi Kawasumi ,  Kazuaki Ohmi ,  Yasuhiro Sekine ,  Yukihiro Hayakawa

IPC分类号： H01L21/205 ,  C23C16/04 ,  C23C16/20 ,  C23C16/448 ,  H01L21/20 ,  H01L21/28 ,  H01L21/285 ,  H01L21/31 ,  H01L21/3205 ,  H01L23/52 ,  C23C16/00

CPC分类号： C23C16/4487 ,  C23C16/045 ,  C23C16/20 ,  C23C16/4482 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/28562 ,  Y10S261/65

摘要： A chemical vapor deposition apparatus comprises a starting material container holding a starting material in a liquid state, a starting gas generating container into which the liquid starting material is fed from the starting material container, a means for keeping constant the liquid level of the liquid starting material held in the starting gas generating container, a means for injecting a bubbling gas from the outside into the liquid starting material held in the starting gas generating container, thereby bubbling the starting gas, and a reaction chamber into which a mixed gas of the starting gas and the bubbling gas are fed.

摘要翻译： 一种化学气相沉积装置，包括：保持液态原料的原料容器，从原料容器供给液体原料的起始气体发生容器，起始液体的液面保持恒定的装置; 保持在起动气体发生容器中的材料，用于将起泡气体从外部喷射到保持在起始气体发生容器中的液体起始材料中，从而使起始气体起泡的装置，以及起动气体的混合气体的反应室 气体和鼓泡气体进料。

公开(公告)号：US20180148836A1

公开(公告)日：2018-05-31

申请号：US15316646

申请日：2015-06-17

申请人： AIXTRON SE

发明人： Michael LONG ,  Birgit Irmgard BECCARD ,  Claudia CREMER ,  Karl-Heinz TRIMBORN ,  Andy EICHLER ,  Andreas POQUÉ

IPC分类号： C23C16/448 ,  C23C14/12 ,  C23C14/24 ,  C23C14/54 ,  C23C16/52

CPC分类号： C23C16/4483 ,  C23C14/12 ,  C23C14/246 ,  C23C14/26 ,  C23C14/54 ,  C23C16/4486 ,  C23C16/4487 ,  C23C16/52 ,  F22D1/003

摘要： In a device and a method for generating vapor in a CVD or PVD device, particles are vaporized by bringing the particles into contact with a first heat transfer surface of a vaporization device. The vapor generated by vaporizing the particles is transported by a carrier gas out of the vaporization device and into a single or multistage modulation device. In a vapor transfer phase, second heat transfer surfaces of the modulation device are adjusted to a first modulation temperature, at which the vapor passes through the modulation device without condensing on the second heat transfer surfaces. At an intermission phase, the second heat transfer surfaces are adjusted to a second modulation temperature, at which at least some of the vapor condenses on the second heat transfer surfaces.