OXADIAZOLE BASED PHOTOSENSITIZERS FOR USE IN DYE-SENSITIVE SOLAR CELLS AND PHOTODYNAMIC THERAPY
    16.
    发明申请
    OXADIAZOLE BASED PHOTOSENSITIZERS FOR USE IN DYE-SENSITIVE SOLAR CELLS AND PHOTODYNAMIC THERAPY 有权
    用于敏感型太阳能电池和光电疗法的基于奥沙利LE的光敏剂

    公开(公告)号:US20160343516A1

    公开(公告)日:2016-11-24

    申请号:US14720287

    申请日:2015-05-22

    IPC分类号: H01G9/20 H01L51/00

    摘要: An oxadiazole dye for use as an organic photosensitizer. The oxadiazole dye comprising donor-π-spacer-acceptor type portions in which at least one of an oxadiazole isomer acts as a π-conjugated bridge (spacer), a biphenyl unit acts as an electron-donating unit, a carboxyl group act as an electron acceptor group, and a cyano group acts as an anchor group. An optional thiophene group acts as part of the π-conjugated bridge (spacer). The dye for use as organic photosensitizers in a dye-sensitized solar cell and in photodynamic therapies. Computational DFT and time dependent DFT (TD-DFT) modeling techniques showing Light Harvesting Efficiency (LHE), Free Energy for Electron Injection (ΔGinject), Excitation Energies, and Frontier Molecular Orbitals (FMOs) indicate that the series of dye comprise a more negative ΔGinject and a higher LHE value; resulting in a higher incident photon to current efficiency (IPCE).

    摘要翻译: 用作有机光敏剂的恶二唑染料。 恶二唑染料包括供体-π-间隔受体型部分,其中恶二唑异构体中的至少一种用作π共轭桥(间隔基),联苯单元用作给电子单元,羧基作为 电子受体基团和氰基作为锚基团。 可选的噻吩基团作为π共轭桥(间隔基)的一部分。 用作染料敏化太阳能电池中的有机光敏剂的染料和光动力疗法中的染料。 显示光收获效率(LHE),电子注入自由能(ΔGinject),激发能和前沿分子轨道(FMO)的计算DFT和时间依赖DFT(TD-DFT)建模技术表明,该系列染料包含更负的 ΔGinject和较高的LHE值; 导致更高的入射光子到目前的效率(IPCE)。

    METHOD FOR PRODUCING PHOTOELECTRODE
    17.
    发明申请
    METHOD FOR PRODUCING PHOTOELECTRODE 审中-公开
    生产光电的方法

    公开(公告)号:US20160333485A1

    公开(公告)日:2016-11-17

    申请号:US15221212

    申请日:2016-07-27

    摘要: A photoelectrode (100) of the present invention includes a conductive layer (12) and a photocatalytic layer (13) provided on the conductive layer (12). The conductive layer (12) is made of a metal nitride. The photocatalytic layer (13) is made of at least one selected from the group consisting of a nitride semiconductor and an oxynitride semiconductor. When the photocatalytic layer (13) is made of a n-type semiconductor, the energy difference between the vacuum level and the Fermi level of the conductive layer (12) is smaller than the energy difference between the vacuum level and the Fermi level of the photocatalytic layer (13). When the photocatalytic layer (13) is made of a p-type semiconductor, the energy difference between the vacuum level and the Fermi level of the conductive layer (12) is larger than the energy difference between the vacuum level and the Fermi level of the photocatalytic layer (13).

    摘要翻译: 本发明的光电极(100)包括设置在导电层(12)上的导电层(12)和光催化层(13)。 导电层(12)由金属氮化物制成。 光催化层(13)由选自氮化物半导体和氧氮化物半导体中的至少一种制成。 当光催化层(13)由n型半导体制成时,导电层(12)的真空度与费米能级之间的能量差小于真空级与费米能级之间的能量差 光催化层(13)。 当光催化层(13)由p型半导体制成时,导电层(12)的真空度与费米能级之间的能量差大于真空度与费米能级之间的能量差 光催化层(13)。