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公开(公告)号：US12104249B2
公开(公告)日：2024-10-01
申请号：US16515718
申请日：2019-07-18
IPC分类号： C23C16/40 , C08L33/08 , C08L33/12 , C08L39/06 , C23C16/455
CPC分类号： C23C16/45553 , C08L33/08 , C08L33/12 , C08L39/06 , C23C16/407 , C23C16/45527
摘要： The sequential infiltration synthesis (SIS) of group 13 indium and gallium oxides (In2O3 and Ga2O3) into polymethyl methacrylate (PMMA) thin films is demonstrated. Examples highlight the an SIS process using trimethylindium (TMIn) and trimethylgallium (TMGa), respectively, with water. In situ Fourier transform infrared (FTIR) spectroscopy reveals that these metal alkyl precursors reversibly associate with the carbonyl groups of PMMA in analogy to trimethylaluminum (TMAl), however with significantly lower affinity. SIS with TMIn and water enables the growth of In2O3 at 80° C., well below the onset temperature of atomic layer deposition (ALD) using these precursors.
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公开(公告)号：US10819270B2
公开(公告)日：2020-10-27
申请号：US15923909
申请日：2018-03-16
IPC分类号： H02S10/30 , H01L31/054 , G06F30/20 , H01L27/02 , H01L33/10 , H01L33/46 , H01L51/52 , G06F30/00 , G06F119/08 , G06F111/06 , G06F119/06 , G06F30/337 , G06F30/398 , G06F9/455 , G06F11/36 , G06F16/2453 , G06F9/48
摘要： Tailoring the emission spectra of a solar thermophotovoltaic emitter away from that of a blackbody, thereby minimizing transmission and thermalization loss in the energy receiver, is a viable approach to circumventing the Shockley-Queisser limit to single junction solar energy conversion. Embodiments allow for radically tuned selective thermal emission that leverages the interplay between two resonant phenomena in a simple planar structure—absorption in weakly-absorbing thin films and reflection in multi-layer dielectric stacks. A virtual screening approach is employed based on Pareto optimality to identify a small number of promising structures for a selective thermal emitter from a search space of millions, several of which approach the ideal values of a step-function selective thermal emitter.
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公开(公告)号：US20180201637A1
公开(公告)日：2018-07-19
申请号：US15406419
申请日：2017-01-13
CPC分类号： C07F15/065 , C07F7/24 , H01G9/2045 , H01L51/005
摘要： Lead halide perovskites have proven to be a versatile class of visible light absorbers that allow rapid access to the long minority carrier lifetimes and diffusion lengths desirable for traditional single-junction photovoltaics. Computational screening identified both Fe- and Co-substituted MAPbBr3 as promising intermediate band candidate materials, and the later films were synthesized via conventional solution-based processing techniques. First-principles density functional theory (DFT) calculations support the existence of intermediate bands upon Co incorporation and enhanced sub-gap absorption, which are confirmed by UV-visible-NIR absorption spectroscopy. The simple tenability combined with steady state and time-resolved PL studies that reveal no sign of self-quenching suggest this class of materials to be promising for intermediate band photovoltaics.
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公开(公告)号：US11846021B2
公开(公告)日：2023-12-19
申请号：US17039969
申请日：2020-09-30
IPC分类号： C23C16/02 , C23C16/40 , C23C16/455 , A01N25/10 , A61L2/18 , A01N59/16 , A61L101/30 , A61L101/24 , A61L101/06 , A61L101/02
CPC分类号： C23C16/45527 , A01N25/10 , A01N59/16 , A61L2/18 , C23C16/0272 , C23C16/40 , C23C16/45555 , A61L2101/02 , A61L2101/06 , A61L2101/24 , A61L2101/30 , A61L2202/26
摘要： The sequential infiltration synthesis (SIS) and Atomic Layer Deposition (ALD) of metal and/or metal oxides on personal medical equipment (PPE). The deposited metal and/or metal oxides imbues antimicrobial properties to the PPE.
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公开(公告)号：US20220098730A1
公开(公告)日：2022-03-31
申请号：US17039969
申请日：2020-09-30
摘要： The sequential infiltration synthesis (SIS) and Atomic Layer Deposition (ALD) of metal and/or metal oxides on personal medical equipment (PPE). The deposited metal and/or metal oxides imbues antimicrobial properties to the PPE.
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公开(公告)号：US20180204972A1
公开(公告)日：2018-07-19
申请号：US15862561
申请日：2018-01-04
发明人： Alex B. Martinson , Shannon Riha
IPC分类号： H01L31/18 , H01L31/0445 , H01L31/0296
CPC分类号： H01L31/1836 , H01L21/02381 , H01L21/02395 , H01L21/02433 , H01L21/02568 , H01L21/02595 , H01L21/02609 , H01L21/0262 , H01L31/0296 , H01L31/032 , H01L31/0445 , H01L31/1828 , Y02E10/50 , Y02P70/521
摘要： The present invention comprises thin film Cu2S with ultra-large grains or in the best case no grain boundaries (a single crystal thin film). Based on our recent successes in atomic layer epitaxy of other materials we sought and found a suitable substrate (namely GaAs) that induces what appear to be Cu2S single crystal thin films.
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公开(公告)号：US09382618B2
公开(公告)日：2016-07-05
申请号：US14335745
申请日：2014-07-18
IPC分类号： C23C16/30 , C23C16/455
CPC分类号： C23C16/305 , C23C16/45553
摘要： A method for synthesizing an In(III) N,N′-diisopropylacetamidinate precursor including cooling a mixture comprised of diisopropylcarbodiimide and diethyl ether to approximately −30° C., adding methyllithium drop-wise into the mixture, allowing the mixture to warm to room temperature, adding indium(III) chloride as a solid to the mixture to produce a white solid, dissolving the white solid in pentane to form a clear and colorless solution, filtering the mixture over a celite plug, and evaporating the solution under reduced pressure to obtain a solid In(III) N,N′-diisopropylacetamidinate precursor. This precursor has been further used to develop a novel atomic layer deposition technique for indium sulfide by dosing a reactor with the precursor, purging with nitrogen, dosing with dilute hydrogen sulfide, purging again with nitrogen, and repeating these steps to increase growth.
摘要翻译： 合成In（III）N，N'-二异丙基乙酰胺化物前体的方法，包括将由二异丙基碳二亚胺和二乙醚组成的混合物冷却至约-30℃，滴加甲基锂至混合物中，使混合物温热至室温 将氯化铟（III）作为固体加入到混合物中以产生白色固体，将白色固体溶解在戊烷中以形成透明无色的溶液，通过硅藻土塞过滤混合物，并在减压下蒸发溶液， 得到固体In（III）N，N'-二异丙基乙酰胺化物前体。 该前体已被进一步用于开发用于硫化铟的新型原子层沉积技术，其中通过用前体进料反应器，用氮气吹扫，用稀硫化氢给料，再次用氮气吹扫，并重复这些步骤以增加生长。
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公开(公告)号：US20210017649A1
公开(公告)日：2021-01-21
申请号：US16515718
申请日：2019-07-18
IPC分类号： C23C16/455 , C08L33/12 , C08L33/08 , C08L39/06 , C23C16/40
摘要： The sequential infiltration synthesis (SIS) of group 13 indium and gallium oxides (In2O3 and Ga2O3) into polymethyl methacrylate (PMMA) thin films is demonstrated. Examples highlight the an SIS process using trimethylindium (TMIn) and trimethylgallium (TMGa), respectively, with water. In situ Fourier transform infrared (FTIR) spectroscopy reveals that these metal alkyl precursors reversibly associate with the carbonyl groups of PMMA in analogy to trimethylaluminum (TMAl), however with significantly lower affinity. SIS with TMIn and water enables the growth of In2O3 at 80° C., well below the onset temperature of atomic layer deposition (ALD) using these precursors.
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公开(公告)号：US10428100B2
公开(公告)日：2019-10-01
申请号：US15406419
申请日：2017-01-13
摘要： Lead halide perovskites have proven to be a versatile class of visible light absorbers that allow rapid access to the long minority carrier lifetimes and diffusion lengths desirable for traditional single-junction photovoltaics. Computational screening identified both Fe- and Co-substituted MAPbBr3 as promising intermediate band candidate materials, and the later films were synthesized via conventional solution-based processing techniques. First-principles density functional theory (DFT) calculations support the existence of intermediate bands upon Co incorporation and enhanced sub-gap absorption, which are confirmed by UV-visible-NIR absorption spectroscopy. The simple tenability combined with steady state and time-resolved PL studies that reveal no sign of self-quenching suggest this class of materials to be promising for intermediate band photovoltaics.
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公开(公告)号：US09773991B2
公开(公告)日：2017-09-26
申请号：US14819248
申请日：2015-08-05
发明人： Alex B. Martinson , In Soo Kim
IPC分类号： H01L21/00 , H01L51/44 , H01L31/032 , H01L31/0216 , H01L31/0256
CPC分类号： H01L51/448 , H01L31/02167 , H01L31/032 , H01L2031/0344 , Y02E10/549
摘要： A method of protecting a perovskite halide film from moisture and temperature includes positioning the perovskite halide film in a chamber. The chamber is maintained at a temperature of less than 200 degrees Celsius. An organo-metal compound is inserted into the chamber. A non-hydrolytic oxygen source is subsequently inserted into the chamber. The inserting of the organo-metal compound and subsequent inserting of the non-hydrolytic oxygen source into the chamber is repeated for a predetermined number of cycles. The non-hydrolytic oxygen source and the organo-metal compound interact in the chamber to deposit a non-hydrolytic metal oxide film on perovskite halide film. The non-hydrolytic metal oxide film protects the perovskite halide film from relative humidity of greater than 35% and a temperature of greater than 150 degrees Celsius, respectively.
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