公开(公告)号：US6110758A

公开(公告)日：2000-08-29

申请号：US435880

申请日：1999-11-08

Applicant: Joseph P. Estrera ,  Keith T. Passmore ,  Timothy W. Sinor

Inventor： Joseph P. Estrera ,  Keith T. Passmore ,  Timothy W. Sinor

IPC: H01J1/34 ,  H01L21/00

CPC classification number: H01J9/233 ,  H01J1/34 ,  H01J2201/3423 ,  H01J2231/50015

Abstract: An improved photocathode and image intensifier tube are disclosed along with a method for making both the tube and photocathode. The disclosed photocathode and image intensifier tube have an active layer comprising two or more sublayers. The first sublayer has a first concentration of a group III-V semiconductor compound while the second sublayer has a second concentration of the group III-V semiconductor compound. The multilayer active layer is coupled to a window layer.

Abstract translation: 公开了改进的光电阴极和图像增强管以及用于制造管和光电阴极的方法。 所公开的光电阴极和图像增强管具有包括两个或更多个子层的活性层。 第一子层具有III-V族半导体化合物的第一浓度，而第二子层具有第III-V族半导体化合物的第二浓度。 多层有源层耦合到窗口层。

公开(公告)号：US5712490A

公开(公告)日：1998-01-27

申请号：US754765

申请日：1996-11-21

Applicant: Arlynn W. Smith

Inventor： Arlynn W. Smith

IPC: H01J1/34 ,  H01L29/06 ,  H01J31/00 ,  H01L29/12

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: A photocathode device is disclosed including an active layer, a composition ramp layer and an emission layer including an emission surface. The active layer, ramp layer and emission layer each have both a predetermined material composition and a predetermined doping level for maintaining the conduction band of the device flat until the emission surface which functions to increase the photoresponse of the device.

Abstract translation: 公开了一种光电阴极器件，其包括有源层，组合物斜面层和包括发射表面的发射层。 有源层，斜面层和发射层各自具有预定的材料组成和预定的掺杂水平，以保持器件的导带平坦，直到用于增加器件的光响应的发射表面。

公开(公告)号：US5710435A

公开(公告)日：1998-01-20

申请号：US580057

申请日：1995-12-20

Applicant: Minoru Niigaki ,  Toru Hirohata ,  Tomoko Suzuki ,  Masami Yamada

Inventor： Minoru Niigaki ,  Toru Hirohata ,  Tomoko Suzuki ,  Masami Yamada

IPC: H01J1/34 ,  H01J43/08 ,  H01L29/06 ,  H01L29/12

CPC classification number: H01J1/34 ,  H01J43/08 ,  H01J2201/3423

Abstract: A photoelectric emission surface which is excellent in stability and reproducibility of photoelectric conversion characteristics and has a structure capable of obtaining a high photosensitivity is provided. A predetermined voltage is applied between an upper surface electrode and a lower surface electrode by a battery. Upon application of this voltage, a p-n junction formed between a contact layer and an electron emission layer is reversely biased. A depletion layer extends from the p-n junction into the photoelectric emission surface, and an electric field is formed in the electron emission layer and a light absorbing layer in a direction for accelerating photoelectrons. When incident light is absorbed in the light absorbing layer to excite photoelectrons, the photoelectrons are accelerated by the electric field toward the emission surface. The photoelectrons obtain an energy upon this electric field acceleration, and are transited, in the electron emission layer, to a conduction band at a higher energy level, and emitted into a vacuum.

Abstract translation: 提供了具有优异的光电转换特性的稳定性和再现性并且具有能够获得高光敏性的结构的光电发射表面。 通过电池在上表面电极和下表面电极之间施加预定的电压。 在施加该电压时，形成在接触层和电子发射层之间的p-n结被反向偏置。 耗尽层从p-n结延伸到光电发射表面，并且在电子发射层和在光子电子加速方向上的光吸收层形成电场。 当入射光吸收在光吸收层中以激发光电子时，光电子通过电场被加速到发射表面。 光电子在该电场加速下获得能量，并且在电子发射层中转移到更高能级的导带，并发射到真空中。

公开(公告)号：US5378640A

公开(公告)日：1995-01-03

申请号：US93359

申请日：1993-07-19

Applicant: Hyo-Sup Kim

Inventor： Hyo-Sup Kim

IPC: H01J1/34 ,  H01J9/12 ,  H01J29/38 ,  H01J31/50 ,  H01L31/18

CPC classification number: H01J9/12 ,  H01J1/34 ,  H01J2201/3423 ,  H01J2231/50015 ,  Y10S438/936

Abstract: An improved photocathode for use in a night vision system, comprising a glass face plate, an AlInAs window layer having an anti-reflection and protective coating bonded to the face plate, an InGaAs active layer epitaxially grown to the window layer, and a chrome electrode bonded to the face plate, the window layer, and the active layer providing an electrical contact between the photocathode and the night vision system, whereby an optical image illuminated into the face plate results in a corresponding electron pattern emitted from the active layer.

Abstract translation: 一种用于夜视系统的改进的光电阴极，包括玻璃面板，具有结合到面板的抗反射和保护涂层的AlInAs窗口层，外延生长到窗口层的InGaAs有源层和铬电极 粘合到面板，窗口层和有源层，在光电阴极和夜视系统之间提供电接触，​​由此照射到面板中的光学图像导致从有源层发射的对应的电子图案。

公开(公告)号：US4868380A

公开(公告)日：1989-09-19

申请号：US163347

申请日：1988-03-02

Applicant: Richard A. Booman ,  Stephen F. Blazo

Inventor： Richard A. Booman ,  Stephen F. Blazo

IPC: G01J1/02 ,  H01J1/34 ,  H01J43/06

CPC classification number: H01J43/06 ,  H01J1/34 ,  H01J2201/317 ,  H01J2201/3423

Abstract: An optical waveguide photocathode for converting optical signals to electrical signals has an optical waveguide, a semiconductor covering the end of the optical waveguide, a first transparent electrode disposed between the end of the waveguide and the semiconductor, and a second electrode disposed adjacent to and spaced from the semiconductor. An electric potential is applied between the first electrode and the second electrode. The waveguide, first conductor, and semiconductor are relatively pointed at the end to produce high electric field strength at the semiconductor thereby enabling semiconductors with high work functions to be used. The relatively small area of the semiconductor illuminated by the waveguide reduces the dark current, making the device more sensitive to low level signals. The device may be used in a streak tube or a photomultiplier.

Abstract translation: 用于将光信号转换为电信号的光波导光电阴极具有光波导，覆盖光波导末端的半导体，设置在波导端与半导体端之间的第一透明电极和邻近并间隔开的第二电极 从半导体。 在第一电极和第二电极之间施加电位。 波导，第一导体和半导体相对尖端在半导体处产生高电场强度，从而使得能够使用具有高功函数的半导体。 由波导照明的半导体的相对小的面积减小了暗电流，使得器件对低电平信号更敏感。 该装置可以用于条形管或光电倍增管。

公开(公告)号：US4311743A

公开(公告)日：1982-01-19

申请号：US80948

申请日：1979-10-01

Applicant: Erich Kasper ,  Suso Weber

Inventor： Erich Kasper ,  Suso Weber

IPC: H01J1/34 ,  H01J29/00 ,  H01L21/316 ,  H01L21/58 ,  B32B3/02 ,  B32B17/06 ,  C03B27/00

CPC classification number: H01L24/83 ,  H01J1/34 ,  H01J29/006 ,  H01L21/316 ,  H01L24/26 ,  H01J2201/3423 ,  H01L2224/83136 ,  H01L2224/8319 ,  H01L2224/8385 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/0103 ,  H01L2924/01043 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01088 ,  H01L2924/0132 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10329 ,  Y10T428/21

Abstract: A semiconductor-glass composite material comprises at least one semiconductor bonded to a glass substrate, with the semiconductor layer having a strain .epsilon..ltoreq.0.3 per mil, and a dislocation density N.sub.V .ltoreq.2.times.10.sup.6 cm.sup.-2. In a process for producing the semiconductor-glass composite material, the semiconductor and glass are heated to a bonding temperature, bonded under pressure, and tempered at a temperature T.sub.a such that the viscosity of the glass at T.sub.a is 10.sup.12 to 10.sup.13.5 poise, and the following relationship holds: ##EQU1## wherein .alpha..sub.G and .alpha..sub.S are the coefficients of expansion of the glass and semiconductor, respectively, and T is temperature. The composite material is then cooled to room temperature.

Abstract translation: 半导体 - 玻璃复合材料包括至少一个结合到玻璃基板上的半导体，半导体层的应变ε为0.3密耳，位错密度NV <2×106cm -2。 在半导体玻璃复合材料的制造方法中，将半导体和玻璃加热到接合温度，在压力下接合，并在Ta的温度下回火，使得Ta的玻璃的粘度为1012〜1013.5泊， 以下关系成立：其中αG和αS分别是玻璃和半导体的膨胀系数，T是温度。 然后将复合材料冷却至室温。

公开(公告)号：USB496487I5

公开(公告)日：1976-01-20

申请号：US49648774

申请日：1974-08-12

IPC: H01J1/34 ,  H01J29/38 ,  H01J31/50 ,  H01L21/208 ,  H01L29/205 ,  H01L31/11 ,  H01L33/00 ,  H01S5/323

CPC classification number: H01S5/323 ,  H01J1/34 ,  H01J29/38 ,  H01J31/501 ,  H01J2201/3423 ,  H01L29/205 ,  H01L31/11 ,  H01L33/0025

公开(公告)号：USB309756I5

公开(公告)日：1975-01-28

申请号：US30975672

申请日：1972-11-27

IPC: H01J1/34 ,  H01J9/12

CPC classification number: H01J1/34 ,  H01J9/12 ,  H01J2201/3423 ,  Y10S148/065 ,  Y10S148/067 ,  Y10S148/072 ,  Y10S148/107 ,  Y10S148/12

公开(公告)号：US3845496A

公开(公告)日：1974-10-29

申请号：US39573373

申请日：1973-09-10

Applicant: RCA CORP

Inventor： MARTINELLI R ,  GOLDSTEIN B

IPC: H01J1/34 ,  H01J9/12

CPC classification number: H01J9/12 ,  H01J1/34 ,  H01J2201/3423

Abstract: The photocathode described has improved quantum efficiency in the near infrared wavelength region. The photocathode comprises a silicon crystal having carbon atoms bound to the silicon in the surface region and a work-function-reducing layer.

Abstract translation: 所描述的光电阴极在近红外波长区域提高了量子效率。 光电阴极包括具有与表面区域中的硅结合的碳原子的硅晶体和功函数降低层。

公开(公告)号：US3821778A

公开(公告)日：1974-06-28

申请号：US31214472

申请日：1972-12-04

Applicant: HUGHES AIRCRAFT CO

Inventor： KURTIN S

IPC: H01J1/34 ,  H01J29/38 ,  H01L19/00

CPC classification number: H01J1/34 ,  H01J29/38 ,  H01J2201/3423 ,  Y10S148/12

Abstract: AN INFRARED PHOTOEMITTER AND PROCESS FOR FABRICATING SAME WHEREIN A THIN METAL LAYER IS SANDWICHED IN A COMPOSITE STRUCTURE BETWEEN A SUITABLE PHOTOABSORTIVE SEMICONDUCTIVE LAYER AND A LOW WORK FUNCTION INSULATING LAYER. THE SEMICONDUCTIVE LAYER SERVES AS A PHOTON ABSORBER AND PHOTOELECTION SOURCE FOR THE DEVICE. THE INSULATING LAYER IS CHOSEN FOR ITS LOW WORK FUNCTION. THE METAL INTERLAYER ELIMATES THE HETERJUNCTION WHICH IN ITS ABSENCE WOULD EXIST BETWEEN THE SEMICONDUCTIVE AND INSULATING LAYERS AND THEREBY ELIMINATES THE RESTRICTION THAT SUCH HETEROJUNCTIONS IMPOSE ON THE EFFICIENCY AND WAVELENGTH RESPONSE OF PRIOR ART COMPOSITION PHOTOEMITTERS.