公开(公告)号：US5066605A

公开(公告)日：1991-11-19

申请号：US341205

申请日：1989-04-21

申请人： Erich Kasper ,  Maximilian Kuisl ,  Ulf Konig ,  Johann F. Luy

发明人： Erich Kasper ,  Maximilian Kuisl ,  Ulf Konig ,  Johann F. Luy

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L21/822 ,  H01L23/532 ,  H01L23/64

CPC分类号： H01L21/28525 ,  H01L21/76838 ,  H01L21/8221 ,  H01L23/53271 ,  H01L23/647 ,  H01L2924/0002 ,  Y10S148/029

摘要： A process for producing monolithically integrated multifunction circuit arrangements. A substrate having an integrated circuit formed therein is provided, and further multilayer semiconductor components and the corresponding electrical leads are arranged on top of one another on the substrate surface. The multilayer semiconductor components and the electrical leads are produced from an epitaxially grown semiconductor layer sequence.

摘要翻译： 一种用于制造单片集成多功能电路装置的方法。 提供具有形成在其中的集成电路的衬底，并且在衬底表面上彼此之间布置另外的多层半导体部件和相应的电引线。 多层半导体元件和电引线由外延生长的半导体层序列产生。

公开(公告)号：US5365243A

公开(公告)日：1994-11-15

申请号：US898850

申请日：1992-06-15

申请人： Josef Buchler ,  Erich Kasper

发明人： Josef Buchler ,  Erich Kasper

IPC分类号： H01Q1/32 ,  H01Q19/06 ,  H01Q23/00

CPC分类号： H01Q1/3275 ,  H01Q19/06 ,  H01Q23/00

摘要： A planar waveguide structure for mm-wave transmitters and receivers. The active semiconductor component elements and the planar waveguide with which they are connected of the transmitters and/or receivers are arranged on the front side of a semiconductor substrate. The rear side or surface of the semiconductor substrate is at least partially formed as an inwardly or outwardly radiating surface and is geometrically shaped such that an electromagnetic property incident or emanating radiation is altered in a predetermined manner.

摘要翻译： 一种用于毫米波发射器和接收器的平面波导结构。 有源半导体元件和与发射器和/或接收器连接的平面波导布置在半导体衬底的正面上。 半导体衬底的后侧或表面至少部分地形成为向内或向外辐射表面，并且几何形状使得电磁特性入射或发射辐射以预定方式改变。

公开(公告)号：US4935375A

公开(公告)日：1990-06-19

申请号：US285389

申请日：1988-12-16

申请人： Erich Kasper ,  Klaus Worner

发明人： Erich Kasper ,  Klaus Worner

IPC分类号： H01L21/203 ,  H01L21/331 ,  H01L21/763 ,  H01L29/08 ,  H01L29/732

CPC分类号： H01L29/66287 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/763 ,  H01L29/0804 ,  H01L29/7325 ,  Y10S148/011

摘要： A structured semiconductor body based on a Si substrate and having monocrystalline semiconductor regions and barrier regions which contain polycrystalline silicon which have preferably been produced in an Si-MBE process. The barrier regions are provided to delimit the monocrystalline Si semiconductor structures to prevent undesired current flow, for example between two monocrystalline devices of an integrated circuit. The polycrystalline silicon of the barrier regions has a substantially lower electrical conductivity than the monocrystalline regions, and consequently it is possible to spatially selectively dope portions the barrier region so as to provide regions which electrically contact a monocrystalline silicon region. In a preferred embodiment a polycrystalline silicon region within the barrier region is doped so that it forms a pn-junction with the adjacent monocrystalline semiconductor region and can be used, for example, as an emitter zone of a bipolar device.

公开(公告)号：US4175227A

公开(公告)日：1979-11-20

申请号：US862520

申请日：1977-12-20

申请人： Erich Kasper

发明人： Erich Kasper

IPC分类号： B23K9/02 ,  B23K9/23 ,  B23K33/00 ,  B23K35/30 ,  B23K9/12

CPC分类号： B23K33/004 ,  B23K35/3086 ,  B23K9/0209 ,  B23K9/23

摘要： Chemically resistant steels for containers are butt welded by using an automatic welding process. The electrode is oscillated over the whole width of the seam and is kept to a maximum thickness of 1 mm.

摘要翻译： 通过使用自动焊接工艺对容器的耐化学性钢进行对焊。 电极在接缝的整个宽度上振荡并保持最大厚度为1mm。

公开(公告)号：US20100097084A1

公开(公告)日：2010-04-22

申请号：US12448978

申请日：2008-01-11

申请人： Erich Kasper ,  Michael Morschbach

发明人： Erich Kasper ,  Michael Morschbach

IPC分类号： G01R31/302 ,  H01L31/101

CPC分类号： H01L27/0248 ,  G01R31/275 ,  G01R31/2884 ,  H01L29/7371 ,  H01L31/173 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention relates to a method for monitoring the breakdown of a pn junction in a semiconductor component and to a semiconductor component adapted to carrying out said method. According to the method, optical radiation which is emitted if a breakdown occurs on a pn junction is detected by a photosensitive electronic component (8) integrated into the semiconductor component. The supply of the pn junction is controlled according to the detected radiation to prevent a complete breakdown during operation of the semiconductor component. The method according to the invention and the semiconductor component adapted thereto permit the operating range of the semiconductor component to be extended and the power output to be increased without the risk of destruction.

摘要翻译： 本发明涉及一种用于监测半导体部件中的pn结的击穿和适于执行所述方法的半导体部件的方法。 根据该方法，通过集成到半导体部件中的感光电子部件（8）检测在pn结上发生击穿时发射的光辐射。 根据检测到的辐射来控制pn结的供应，以防止在半导体部件的操作期间的完全击穿。 根据本发明的方法和适于其的半导体部件允许半导体部件的工作范围延长并且功率输出增加而没有破坏的风险。

公开(公告)号：US4311743A

公开(公告)日：1982-01-19

申请号：US80948

申请日：1979-10-01

申请人： Erich Kasper ,  Suso Weber

发明人： Erich Kasper ,  Suso Weber

IPC分类号： H01J1/34 ,  H01J29/00 ,  H01L21/316 ,  H01L21/58 ,  B32B3/02 ,  B32B17/06 ,  C03B27/00

CPC分类号： H01L24/83 ,  H01J1/34 ,  H01J29/006 ,  H01L21/316 ,  H01L24/26 ,  H01J2201/3423 ,  H01L2224/83136 ,  H01L2224/8319 ,  H01L2224/8385 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/0103 ,  H01L2924/01043 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01088 ,  H01L2924/0132 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10329 ,  Y10T428/21

摘要： A semiconductor-glass composite material comprises at least one semiconductor bonded to a glass substrate, with the semiconductor layer having a strain .epsilon..ltoreq.0.3 per mil, and a dislocation density N.sub.V .ltoreq.2.times.10.sup.6 cm.sup.-2. In a process for producing the semiconductor-glass composite material, the semiconductor and glass are heated to a bonding temperature, bonded under pressure, and tempered at a temperature T.sub.a such that the viscosity of the glass at T.sub.a is 10.sup.12 to 10.sup.13.5 poise, and the following relationship holds: ##EQU1## wherein .alpha..sub.G and .alpha..sub.S are the coefficients of expansion of the glass and semiconductor, respectively, and T is temperature. The composite material is then cooled to room temperature.

摘要翻译： 半导体 - 玻璃复合材料包括至少一个结合到玻璃基板上的半导体，半导体层的应变ε为0.3密耳，位错密度NV <2×106cm -2。 在半导体玻璃复合材料的制造方法中，将半导体和玻璃加热到接合温度，在压力下接合，并在Ta的温度下回火，使得Ta的玻璃的粘度为1012〜1013.5泊， 以下关系成立：其中αG和αS分别是玻璃和半导体的膨胀系数，T是温度。 然后将复合材料冷却至室温。

公开(公告)号：US4295923A

公开(公告)日：1981-10-20

申请号：US130122

申请日：1980-03-13

申请人： Erich Kasper

发明人： Erich Kasper

IPC分类号： C03C15/00 ,  C03C27/00 ,  C30B33/00 ,  H01J9/12 ,  H01J9/233 ,  H01J29/38 ,  H01J29/45 ,  H01L21/306 ,  H01L21/316 ,  H01L29/12 ,  H01L31/00

CPC分类号： H01J9/233 ,  Y10S438/977

摘要： In a method of manufacturing a semiconductor/glass composite material, a glass substrate is covered partially by a covering layer, a semiconductor is connected by pressure and heat to the surface of the substrate not covered by the covering layer, and the semiconductor is then etched away by means of etch polishing to the thickness of the covering layer. The covering may be silicon dioxide, and may be applied to substrate by sputtering or by deposition from the gas phase. The etching solution is NH.sub.4 OH and H.sub.2 O.sub.2 in the ratio 700 to 1.The composite material may be used as a photocathode in an image converter or image intensifier tube.

摘要翻译： 在制造半导体/玻璃复合材料的方法中，玻璃基板被覆盖层部分地覆盖，半导体通过压力和热量连接到未被覆盖层覆盖的基板的表面，然后蚀刻半导体 通过蚀刻抛光去除覆盖层的厚度。 覆盖物可以是二氧化硅，并且可以通过溅射或通过气相沉积施加到基底上。 蚀刻溶液为700至1的NH 4 OH和H 2 O 2。复合材料可用作图像转换器或图像增强管中的光电阴极。

公开(公告)号：US08519732B2

公开(公告)日：2013-08-27

申请号：US12448978

申请日：2008-01-11

申请人： Erich Kasper ,  Michael Morschbach

发明人： Erich Kasper ,  Michael Morschbach

IPC分类号： G01R31/02

CPC分类号： H01L27/0248 ,  G01R31/275 ,  G01R31/2884 ,  H01L29/7371 ,  H01L31/173 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention relates to a method for monitoring the breakdown of a pn junction in a semiconductor component and to a semiconductor component adapted to carrying out said method. According to the method, optical radiation which is emitted if a breakdown occurs on a pn junction is detected by a photosensitive electronic component (8) integrated into the semiconductor component. The supply of the pn junction is controlled according to the detected radiation to prevent a complete breakdown during operation of the semiconductor component. The method according to the invention and the semiconductor component adapted thereto permit the operating range of the semiconductor component to be extended and the power output to be increased without the risk of destruction.

摘要翻译： 本发明涉及一种用于监测半导体部件中的pn结的击穿和适于执行所述方法的半导体部件的方法。 根据该方法，通过集成到半导体部件中的感光电子部件（8）检测在pn结上发生击穿时发射的光辐射。 根据检测到的辐射来控制pn结的供应，以防止在半导体部件的操作期间的完全击穿。 根据本发明的方法和适于其的半导体部件允许半导体部件的工作范围延长并且功率输出增加而没有破坏的风险。

公开(公告)号：US5096844A

公开(公告)日：1992-03-17

申请号：US398368

申请日：1989-08-24

申请人： Ulf Konig ,  Klaus Worner ,  Erich Kasper

发明人： Ulf Konig ,  Klaus Worner ,  Erich Kasper

IPC分类号： H01L21/20 ,  H01L21/285 ,  H01L21/331

CPC分类号： H01L29/66287 ,  H01L21/02381 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02639 ,  H01L21/28525 ,  H01L29/66242 ,  Y10S438/969

摘要： The invention relates to a method in particular for manufacturing bipolar transistors. By applying selective epitaxy methods and by using self-adjusting techniques, the process sequence is shortened and the transistor properties are improved.

摘要翻译： 本发明涉及一种特别用于制造双极晶体管的方法。 通过应用选择性外延方法和使用自调整技术，缩短了工艺顺序，提高了晶体管性能。

公开(公告)号：US5003364A

公开(公告)日：1991-03-26

申请号：US70572

申请日：1987-07-07

申请人： Erich Kasper ,  Gerhard Kohlbacher ,  Peter Nothaft

发明人： Erich Kasper ,  Gerhard Kohlbacher ,  Peter Nothaft

IPC分类号： H01L27/148

CPC分类号： H01L27/14875

摘要： The invention relates to CCD Si detector configuration with a semiconductor sensibilizator. The spectral range of the detectors extends from 0.4 .mu.m to 1.6 .mu.m. The CCD Si detector configuration is produced as integrated structure so that a large picture element number can be achieved. The semiconductor layer sequence of the semiconductor sensibilizator is grown using differential molecular beam epitaxial growth techniques.

摘要翻译： 本发明涉及具有半导体敏感剂的CCD Si检测器配置。 检测器的光谱范围从0.4亩延伸至1.6亩。 产生CCD Si检测器结构作为集成结构，从而可以实现大的像素数。 使用差分分子束外延生长技术生长半导体敏化剂的半导体层序列。